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Crystal orientation dependent spin pum** in Bi0.1Y2.9Fe5O12/Pt interface
Authors:
Ganesh Gurjar,
Vinay Sharma,
Avirup De,
Sunil Nair,
S. Patnaik,
Bijoy K. Kuanr
Abstract:
Ferromagnetic resonance (FMR) based spin pum** is a versatile tool to quantify the spin mixing conductance and spin to charge conversion (S2CC) efficiency of ferromagnet/normal metal (FM/NM) heterostructure. The spin mixing conductance of FM/NM interface can also be tuned by the crystal orientation symmetry of epitaxial FM. In this work, we study the S2CC in epitaxial Bismuth substituted Yttrium…
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Ferromagnetic resonance (FMR) based spin pum** is a versatile tool to quantify the spin mixing conductance and spin to charge conversion (S2CC) efficiency of ferromagnet/normal metal (FM/NM) heterostructure. The spin mixing conductance of FM/NM interface can also be tuned by the crystal orientation symmetry of epitaxial FM. In this work, we study the S2CC in epitaxial Bismuth substituted Yttrium Iron Garnet (Bi0.1Y2.9Fe5O12) thin films Bi-YIG (100 nm) interfaced with heavy metal platinum (Pt (8 nm)) deposited by pulsed laser deposition process on different crystal orientation Gd3Ga5O12 (GGG) substrates i.e. [100] and [111]. The crystal structure and surface roughness characterized by X-Ray diffraction and atomic force microscopy measurements establish epitaxial Bi-YIG[100], Bi-YIG[111] orientations and atomically flat surfaces respectively. The S2CC quantification has been realized by two complimentary techniques, (i) FMR-based spin pum** and inverse spin Hall effect (ISHE) at GHz frequency and (ii) temperature dependent spin Seebeck measurements. FMR-ISHE results demonstrate that the [111] oriented Bi-YIG/Pt sample shows significantly higher values of spin mixing conductance ((2.31+-0.23)x10^18 m^-2) and spin Hall angle (0.01+-0.001) as compared to the [100] oriented Bi-YIG/Pt. A longitudinal spin Seebeck measurement reveals that the [111] oriented sample has higher spin Seebeck coefficient (106.40+-10 nV mm-1 K-1). This anisotropic nature of spin mixing conductance and spin Seebeck coefficient in [111] and [100] orientation has been discussed using the magnetic environment elongation along the surface normal or parallel to the growth direction. Our results aid in understanding the role of crystal orientation symmetry in S2CC based spintronics devices.
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Submitted 16 January, 2023;
originally announced January 2023.
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Growth parameters of Bi0.1Y2.9Fe5O12 thin films for high frequency applications
Authors:
Ganesh Gurjar,
Vinay Sharma,
Satyabrata Patnaik,
Bijoy K. Kuanr
Abstract:
The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) films with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet substrates. Two substrate orientations of (100) and (111) were considered. The enhanced distribution of Bi3+ ions at dodecahedral site along (111) is observed to lead…
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The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) films with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet substrates. Two substrate orientations of (100) and (111) were considered. The enhanced distribution of Bi3+ ions at dodecahedral site along (111) is observed to lead to an increment in lattice constant from 12.379 angstrom in (100) to 12.415 angstrom in (111) oriented films. Atomic force microscopy images showed decreasing roughness with increasing film thickness. Compared to (100) grown films, (111) oriented films showed an increase in ferromagnetic resonance linewidth and consequent increase in Gilbert dam**. The lowest Gilbert dam** values are found to be (1.06) * 10E-4 for (100) and (2.30) * 10E-4 for (111) oriented films with thickness of 150 nm. The observed values of extrinsic linewidth, effective magnetization, and anisotropic field are related to thickness of the films and substrate orientation. In addition, the in-plane angular variation established four-fold symmetry for the (100) deposited films unlike the case of (111) deposited films. This study prescribes growth conditions for PLD grown single-crystalline Bi-YIG films towards desired high frequency and magneto-optical device applications.
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Submitted 1 September, 2022;
originally announced September 2022.
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Control of magnetization dynamics by substrate orientation in YIG thin films
Authors:
Ganesh Gurjar,
Vinay Sharma,
Bijoy K. Kuanr,
S. Patnaik
Abstract:
Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi0.1Y2.9Fe5O12, BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation d…
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Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi0.1Y2.9Fe5O12, BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation dependent distribution of Bi3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert dam** which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert dam** are found to be (0.54)*10-4, for YIG (100) and (6.27)*10-4, for Bi-YIG (111) oriented films. Angle variation measurements of the Hr are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4πMeff) and extrinsic linewidth (ΔH0) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.
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Submitted 13 September, 2021;
originally announced September 2021.
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Small dimensional microstrips embedded with ferromagnetic layers: Numerical simulations and experimental results
Authors:
Jonah N. Gollub,
Bijoy Kuanr,
Zibigniew Celinski,
Robert Camley,
David R. Smith
Abstract:
We use a numerical electromagnetic simulation software to investigate a filtering device consisting of a small dimensional microstrips embedded with a thin layer of ferromagnetic material and we compare our results to experimental results. We are able to show good correlation of simulation versus experiment for the magnitude of insertion loss and phase shift. The microstrips considered have dime…
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We use a numerical electromagnetic simulation software to investigate a filtering device consisting of a small dimensional microstrips embedded with a thin layer of ferromagnetic material and we compare our results to experimental results. We are able to show good correlation of simulation versus experiment for the magnitude of insertion loss and phase shift. The microstrips considered have dimensions on the order of the skin depth of the conductor and hence the field distribution is not easily calculated by analytic methods. We show that numerical simulation methods provide an accurate means of characterizing these structures.
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Submitted 19 February, 2008;
originally announced February 2008.
