Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Richard S. Ross,
Andrey A. Kiselev,
Edward T. Croke,
Kevin S. Holabird,
Peter W. Deelman,
Leslie D. Warren,
Ivan Alvarado-Rodriguez,
Ivan Milosavljevic,
Fiona C. Ku,
Wah S. Wong,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings…
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We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
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Submitted 13 April, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
