Showing 1–2 of 2 results for author: Kshirsagar, C
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Amplitude-like functions from entire functions
Authors:
Claude Duhr,
Chandrashekhar Kshirsagar
Abstract:
Recently a function was constructed that satisfies all known properties of a tree-level scattering of four massless scalars via the exchange of an infinite tower of particles with masses given by the non-trivial zeroes of the Riemann zeta function. A key ingredient in the construction is an even entire function whose only zeroes coincide with the non-trivial zeroes of the Riemann zeta function. In…
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Recently a function was constructed that satisfies all known properties of a tree-level scattering of four massless scalars via the exchange of an infinite tower of particles with masses given by the non-trivial zeroes of the Riemann zeta function. A key ingredient in the construction is an even entire function whose only zeroes coincide with the non-trivial zeroes of the Riemann zeta function. In this paper we show that exactly the same conclusions can be drawn for an infinite class of even entire functions with only zeroes on the real line. This shows that the previous result does not seem to be connected to specific properties of the Riemann zeta function, but it applies more generally. As an application, we show that exactly the same conclusions can be drawn for L-functions other than the Riemann zeta function.
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Submitted 17 March, 2023;
originally announced March 2023.
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Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors
Authors:
Yang Su,
Chaitanya U. Kshirsagar,
Matthew C. Robbins,
Nazila Haratipour,
Steven J. Koester
Abstract:
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of -0.8 V and +0.8 V…
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The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of -0.8 V and +0.8 V and produce peak transconductances of 16 uS/um and 41 uS/um for the MoS2 n-MOSFET and BP p-MOSFET, respectively. The inverter shows a voltage gain of 3.5 at a supply voltage, VDD = 2.5 V, and has peak switching current of 108 uA and off-state current of 8.4 uA (2.4 uA) at VIN = 0 (VIN = 2.5 V). In addition, the inverter has voltage gain greater than unity for VDD > 0.5 V, has open butterfly curves for VDD > 1 V, and achieves static noise margin over 500 mV at VDD = 2.5 V. The voltage gain was found to be insensitive to temperature between 270 K and 340 K, and AC large and small-signal operation was demonstrated at frequencies up to 100 kHz. The demonstration of a complementary 2D inverter which operates in a symmetric voltage window suitable for driving a subsequent logic stage is a significant step forward in develo** practical applications for devices based upon 2D materials.
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Submitted 20 February, 2016; v1 submitted 21 August, 2015;
originally announced August 2015.
