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Understanding electronic excited states in BiFeO$_3$ via ab initio calculations and symmetry analysis
Authors:
Aseem Rajan Kshirsagar,
Sven Reichardt
Abstract:
BiFeO$_3$ is a technologically relevant multiferroic perovskite featuring ferroelectricity and antiferromagnetism. Its lattice, magnetic, and ferroelectric degrees of freedoms are coupled to its optically active excitations and thus hold the potential to be reversible probed and controlled by light. In this work, we combine ab initio density functional and many-body perturbation theory methods wit…
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BiFeO$_3$ is a technologically relevant multiferroic perovskite featuring ferroelectricity and antiferromagnetism. Its lattice, magnetic, and ferroelectric degrees of freedoms are coupled to its optically active excitations and thus hold the potential to be reversible probed and controlled by light. In this work, we combine ab initio density functional and many-body perturbation theory methods with an extensive symmetry and atomic-orbital analysis to describe and understand the electronic excited states spectrum and its imprint on the optical absorption spectrum with quantitative accuracy and qualitative insights. We find that the optical absorption spectrum of BiFeO$_3$ contain several strongly bound and spatially localized electronic transitions in which the spin-degree of freedom is almost fully flipped. With our analysis we thoroughly characterize these localized spin-flip transitions in terms of the unusual crystal field splitting of Fe-$3d$ single-electron orbitals. Our symmetry analysis further allows us to thoroughly explain how the spin content and the energetic fine structure of these strongly bound excitons are dictated by the interplay between crystal symmetry, electron-hole attraction, and the spin-orbit coupling.
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Submitted 21 February, 2024; v1 submitted 8 February, 2024;
originally announced February 2024.
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Modulation of magnetization in BiFeO$_3$ using circularly polarized light
Authors:
Aseem Rajan Kshirsagar,
Sven Reichardt
Abstract:
BiFeO$_3$ is a multiferroic material featuring ferroelectricity and noncollinear antiferromagnetism, the latter manifested as a cycloid of spin density. Definitive and efficient control of the characteristic spin texture of BiFeO$_3$ is attractive for emerging quantum devices. In this regard, crystal-field $d\rightarrow d$ excitations localized on Fe atomic sites in BiFeO$_3$ provide an avenue for…
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BiFeO$_3$ is a multiferroic material featuring ferroelectricity and noncollinear antiferromagnetism, the latter manifested as a cycloid of spin density. Definitive and efficient control of the characteristic spin texture of BiFeO$_3$ is attractive for emerging quantum devices. In this regard, crystal-field $d\rightarrow d$ excitations localized on Fe atomic sites in BiFeO$_3$ provide an avenue for manipulation of the spin texture as they induce a complex interplay among the spin, charge, and lattice degrees of freedom. In this work, the ab initio GW-BSE method is used to characterize these excitations within an excitonic picture. We find that the $d-d$ transitions appear as strongly bound, chiral, spin-flip excitons deep within the electronic band gap as a result of the intricate competition between the lattice potential, the antiferromagnetic ordering, the spin-orbit coupling, and the electron-hole interaction. Most crucially, these excitons are composed of electron-hole pairs with opposite spins that constitute almost all of their $\pm \hbar$ total angular momentum. These excitons of specific angular momentum can be selectively excited using circularly polarized light, consequently modulating the local magnetic moment giving rise to transient ferrimagnetism.
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Submitted 21 February, 2024; v1 submitted 8 February, 2024;
originally announced February 2024.
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Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Authors:
Ankita Ram,
Krishna Maity,
Cédric Marchand,
Aymen Mahmoudi,
Aseem Rajan Kshirsagar,
Mohamed Soliman,
Takashi Taniguchi,
Kenji Watanabe,
Bernard Doudin,
Abdelkarim Ouerghi,
Sven Reichardt,
Ian O'Connor,
Jean-Francois Dayen
Abstract:
In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroe…
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In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Submitted 23 October, 2023;
originally announced October 2023.
