Showing 1–23 of 23 results for author: Krzeminski, C

Electrical molecular switch addressed by chemical stimuli

Authors: H. Audi, Y. Viero, N. Alwhaibi, Z. Chen, M. Iazykov, A. Heynderickx, F. Xiao, D. Guerin, C Krzeminski, I. M. Grace, C. J. Lambert, O. Siri, D. Vuillaume, S Lenfant, H. Klein

Abstract: We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths… ▽ More We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths : self-assembled monolayer, tiny nanodot-molecule junction and single molecules. From ab-initio theoretical calculations, we conclude that for the H-substituted molecule, the result Gpro>Gneu is correctly explained by a reduction of the LUMO-HOMO gap, while for the amino-phenyl functionnalized molecule, the result Gneu>Gpro is consistent with a shift of HOMO, which reduces the density of states at the Fermi energy. △ Less

Submitted 30 April, 2020; originally announced May 2020.

Comments: Full paper and supporting information

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Authors: S. Lenfant, Y. Viero, C. Krzeminski, D. Vuillaume, D. Demeter, I. Dobra, M. Ocafrain, P. Blanchard, J. Roncali, C. van Dyck, J. Cornil

Abstract: We report the electronic transport properties of a new photo-addressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and hence the electronic properties of an oligothiophene chain can be reversibly modified by the photochemical trans-cis isomerization of an azobenzene unit fixed in a lateral loop. Electron tran… ▽ More We report the electronic transport properties of a new photo-addressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and hence the electronic properties of an oligothiophene chain can be reversibly modified by the photochemical trans-cis isomerization of an azobenzene unit fixed in a lateral loop. Electron transport measurements through self-assembled monolayers on gold, contacted with eGaIn top contact, show switching with a conductance ratio up to 1E3. Ab initio calculations have been used to identify the most energetically stable conformations of the molecular switch, the corresponding calculated conductances qualitatively explain the trend observed in the photo-switching experiments. △ Less

Submitted 23 May, 2017; v1 submitted 19 May, 2017; originally announced May 2017.

Comments: Full manuscript and supporting information, J. Phys. Chem. C,published on line (2017)

Journal ref: J. Phys. Chem. C 121, 12416-12425 (2017)

High Conductance Ratio in Molecular Optical Switching of Functionalized Nanoparticle Self-Assembled Nanodevices

Authors: Yannick Viero, Guillaume Copie, David Guerin, Christophe Krzeminski, Dominique Vuillaume, Stephane Lenfant, Fabrizio Cleri

Abstract: Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs), functionalized by a dense layer of azobenzene-bithiophene (AzBT) molecules, with the aim of building a light-switchable device with memristive properties. We fabrica… ▽ More Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs), functionalized by a dense layer of azobenzene-bithiophene (AzBT) molecules, with the aim of building a light-switchable device with memristive properties. We fabricate planar nanodevices consisting of NP self-assembled network (NPSANs) contacted by nanoelectrodes separated by interelectrode gaps ranging from 30 to 100 nm. We demonstrate the light-induced reversible switching of the electrical conductance in these AzBT NPSANs with a record on/off conductance ratio up to 620, an average value of ca. 30 and with 85% of the devices having a ratio above 10. Molecular dynamics simulation of the structure and dynamics of the interface between molecular monolayers chemisorbed on the nano particle surface are performed and compared to the experimental findings. The properties of the contact interface are shown to be strongly correlated to the molecular conformation which in the case of AzBT molecules, can reversibly switched between a cis and a trans form by means of light irradiations of well-defined wavelength. Molecular dynamics simulations provide a microscopic explanation for the experimental observation of the reduction of the on/off current ratio between the two isomers, compared to experiments performed on flat self-assembled monolayers contacted by a conducting cAFM tip. △ Less

Submitted 13 September, 2015; originally announced September 2015.

Comments: pdf files : publication and supporting information

Journal ref: J. Phys. Chem. C, 2015, 119, pp 21173_21183

Optical absorption of silicon nanowires

Authors: Tao Xu, Yannick Lambert, Christophe Krzeminski, Bruno Grandidier, Didier Stiévenard, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani

Abstract: We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on… ▽ More We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the Finite Difference Time Domain (FDTD) method is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies, that allows to tune the absorption onset from the ultraviolet radiations to the visible light spectrum. △ Less

Submitted 17 September, 2012; originally announced September 2012.

Journal ref: Journal of Applied Physics 112 (2012) 033506

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Authors: Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, Christophe Krzeminski, Emmanuel Dubois, Bert Du Bois, Jean-Pierre Raskin

Abstract: Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based… ▽ More Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation. △ Less

Submitted 10 July, 2012; originally announced July 2012.

Journal ref: Microelectronic Engineering 95 (2012) 83-89

Nanoelectronics

Authors: G. Allan, C. Delerue, C. Krzeminski, M. Lannoo

Abstract: In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuous exponential tendency of microelectronics towards miniaturization summarized in G. Moore's empirical law. There is consensus that the corresponding decrease in size must end in 10 to 15 years due to physical as well as… ▽ More In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuous exponential tendency of microelectronics towards miniaturization summarized in G. Moore's empirical law. There is consensus that the corresponding decrease in size must end in 10 to 15 years due to physical as well as economical limits. It is thus necessary to prepare new solutions if one wants to pursue this trend further. One approach is to start from the ultimate limit, i.e. the atomic level, and design new materials and components which will replace the present day MOS (metal-oxide-semi- conductor) based technology. This is exactly the essence of nanotechnology, i.e. the ability to work at the molecular level, atom by atom or molecule by molecule, to create larger structures with fundamentally new molecular orga- nization. This should lead to novel materials with improved physical, chemi- cal and biological properties. These properties can be exploited in new devices. Such a goal would have been thought out of reach 15 years ago but the advent of new tools and new fabrication methods have boosted the field. We want to give here an overview of two different subfields of nano- electronics. The first part is centered on inorganic materials and describes two aspects: i) the physical and economical limits of the tendency to miniaturiza- tion; ii) some attempts which have already been made to realize devices with nanometric size. The second part deals with molecular electronics, where the basic quantities are now molecules, which might offer new and quite interest- ing possibilities for the future of nanoelectronics △ Less

Submitted 25 January, 2013; v1 submitted 7 July, 2012; originally announced July 2012.

Comments: HAL : hal-00710039, version 2. This version corrects some aspect concerning the metal-insulator-metal without dots

Journal ref: Nanostructured Materials, 161-183, 2004

Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces

Authors: G. Mahieu, Bruno Grandidier, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, Jean Roncali, C. Martineau

Abstract: A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chai… ▽ More A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chains, a spontaneous ordered film is observed on the HOPG surface. As the interaction of the oligomers is different with both surfaces, the utility of the Si(100) surface to characterize individual oligomers prior to their use into a 2D layer is discussed. △ Less

Submitted 18 April, 2012; originally announced April 2012.

Journal ref: Langmuir 19, 8 (2003) 3350-3356

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

Authors: Bruno Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, Pierre Frere, Phillippe Blanchard, Jean Roncali

Abstract: The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene are highly voltage dependent. We discuss the influence of the alkyl chains on the adsorption process an… ▽ More The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene are highly voltage dependent. We discuss the influence of the alkyl chains on the adsorption process and on the appearance of the molecules in the STM images. △ Less

Submitted 18 April, 2012; originally announced April 2012.

Journal ref: Surface Science 473, 1-2 (2001) 1-7

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

Authors: C. Krzeminski, X. -L. Han, G. Larrieu

Abstract: In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the o… ▽ More In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow. △ Less

Submitted 13 March, 2012; originally announced March 2012.

Report number: Rapport LAAS no. 12187

Journal ref: Applied Physics Letters 100, 26 (2012) 263111

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Authors: Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Colinge, Jean-Pierre Raskin

Abstract: We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices… ▽ More We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature. △ Less

Submitted 15 November, 2011; originally announced November 2011.

Journal ref: Nano Lett., 2011, 11 (11), pp 4520--4526

Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers

Authors: Christophe Krzeminski, Christophe Delerue, Guy Allan, Vincent Haguet, Didier Stiévenard, P. Frere, Eric Levillain, Jean Roncali

Abstract: We present semiempirical tight binding calculations on thienylenevinylene oligomers up to the hexadecamer stage (n=16) and ab initio calculations based on the local density approximation up to n=8. The results correctly describe the experimental variations of the gap versus size, the optical spectra, and the electrochemical redox potentials. We propose a simple model to deduce from the band struct… ▽ More We present semiempirical tight binding calculations on thienylenevinylene oligomers up to the hexadecamer stage (n=16) and ab initio calculations based on the local density approximation up to n=8. The results correctly describe the experimental variations of the gap versus size, the optical spectra, and the electrochemical redox potentials. We propose a simple model to deduce from the band structure of the polymer chain the electronic states of the oligomers close to the gap. We analyze the evolution of the gap as a function of the torsion angle between consecutive cells: the modifications are found to be small up to a ~30^{\circ}; angle. We show that these oligomers possess extensive pi-electron delocalization along the molecular backbone which makes them interesting for future electronic applications such as molecular wires. △ Less

Submitted 19 October, 2011; originally announced October 2011.

Journal ref: Journal of Chemical Physics 111, 14 (1999) 6643-6649

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Authors: Vikram Passi, Aurélie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, Jean-Pierre Raskin

Abstract: Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric aci… ▽ More Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers. △ Less

Submitted 23 September, 2011; originally announced September 2011.

Journal ref: Microelectronics Engineering 87, 10 (2009) 1872

Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Authors: Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, Vincent Bayot

Abstract: Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated. Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated. △ Less

Submitted 4 October, 2012; v1 submitted 13 September, 2011; originally announced September 2011.

Comments: Materials Research Society Fall Meeting, Boston : United States (2004)

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Authors: Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, Alexandre Villaret, Daniel Bensahel

Abstract: Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory array… ▽ More Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Journal ref: IEEE Transaction on Nanotechnology 5, 6 (2006) p. 649

Theory of electrical rectification in a molecular monolayer

Authors: Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. M. Metzger

Abstract: The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mech… ▽ More The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mechanism, but also on the profile of the electrostatic potential which is extremely sensitive to where the electroactive part of the molecule lies in the monolayer. This second effect can produce rectification in the direction opposite to the Aviram-Ratner prediction. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Journal ref: Physical Review B 64, 8 (2001) 085405

Tight binding description of the electronic response of a molecular device to an applied voltage

Authors: Christophe Krzeminski, Christophe Delerue, Guy Allan

Abstract: We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied to a large number of molecules. The voltage dependence of the molecular levels is mainly linear with… ▽ More We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied to a large number of molecules. The voltage dependence of the molecular levels is mainly linear with slopes intimately related to the electronic structure of the molecules. We emphasize that the response to the applied voltage is an important feature which governs the behavior of a molecular device. △ Less

Submitted 9 September, 2011; originally announced September 2011.

Journal ref: The Journal of Physical Chemistry B 105, 27 (2001) 6321

Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Authors: Christophe Krzeminski, Quentin Brulin, V. Cuny, Emmanuel Lecat, Evelyne Lampin, Fabrizio Cleri

Abstract: The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with the method of Wooten, Winer, and Weaire. The amorphous on crystalline stack is annealed afterward on a wide range of temperature and time using five different interatomic potentials: Stillinger-Weber, Tersoff, E… ▽ More The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with the method of Wooten, Winer, and Weaire. The amorphous on crystalline stack is annealed afterward on a wide range of temperature and time using five different interatomic potentials: Stillinger-Weber, Tersoff, EDIP, SW115, and Lenosky. The simulations are exploited to systematically extract the recrystallization velocity. A strong dependency of the results on the interatomic potential is evidenced and explained by the capability of some potentials (Tersoff and SW115) to correctly handle the amorphous structure, while other potentials (Stillinger-Weber, EDIP, and Lenosky) lead to the melting of the amorphous. Consequently, the interatomic potentials are classified according to their ability to simulate the solid or the liquid phase epitaxy. △ Less

Submitted 6 July, 2011; originally announced July 2011.

Journal ref: Journal of Applied Physics 101, 12 (2007) 123506

Efficient photogeneration of charge carriers in silicon nanowires with a radial do** gradient

Authors: D. H. K. Murthy, T. Xu, W. H. Chen, J. Houtepen A., T. J. Savenije, L. D. A. Siebbeles, J. P. Nys, Christophe Krzeminski, Bruno Grandidier, Didier Stiévenard, Philippe Pareige, F. Jomard, Gilles Patriache, O. I. Lebedev

Abstract: From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities duri… ▽ More From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition. △ Less

Submitted 28 June, 2011; originally announced June 2011.

Journal ref: Nanotechnology (2011), Vol. 22, p. 315710

Process Optimization and Downscaling of a Single Electron Single Dot Memory

Authors: Christophe Krzeminski, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Emmanuel Dubois

Abstract: This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation. Based on the process modeling, the influence of various parameters (oxidation temperature, nanowire shap… ▽ More This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation. Based on the process modeling, the influence of various parameters (oxidation temperature, nanowire shape) has been investigated. The necessity of a sharp compromise between these different parameters to ensure the presence of the memory dot has been established. In order to propose an aggressive memory cell, the downscaling of the device has been carefully studied. Scaling rules show that the size of the original device could be reduced by a factor of 2. This point has been previously confirmed by the realization of single-electron memory devices. △ Less

Submitted 21 June, 2011; originally announced June 2011.

Journal ref: IEEE Transactions On Nanotechnology 8, 9 (2009) 737-748

Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

Authors: Christophe Krzeminski, Guilhem Larrieu, Julien Penaud, Evelyne Lampin, Emmanuel Dubois

Abstract: Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approa… ▽ More Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the nanometer range is clearly demonstrated. △ Less

Submitted 4 October, 2012; v1 submitted 16 June, 2011; originally announced June 2011.

Journal ref: Journal of Applied Physics 101, 064908 (2007) 064908-1-8

Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

Authors: Christophe Krzeminski, Evelyne Lampin

Abstract: The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon rec… ▽ More The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon recrystallisation in the framework of solid phase epitaxy and the influence on orientation effects have been investigated at the atomic level using empirical molecular dynamics simulations. The morphology and the migration process of the interface has been observed to be highly dependent on the original inter-facial atomic structure. The [100] interface migration is a quasi-planar ideal process whereas the cases [110] and [111] are much more complex with a more diffuse interface. For [110], the interface migration corresponds to the formation and dissolution of nanofacets whereas for [111] a defective based bilayer reordering is the dominant re-growth process. The study of the interface velocity migration in the ideal case of defect free re-growth reveals no difference between [100] and [110] and a decrease by a mean factor of 1.43 for the case [111]. Finally, the influence of boron atoms in the amorphous part on the interface migration velocity is also investigated in the case of [100] orientation. △ Less

Submitted 14 June, 2011; originally announced June 2011.

Journal ref: European Journal of physics B (2011) , Vol. 81, No 3, p. 283-290

Graphene buffer layer on Si-terminated SiC : a multi-minima energy surface studied with an empirical interatomic potential

Authors: Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud

Abstract: The atomistic structure of the graphene buffer layer on Si-terminated SiC is studied using a modified environment-dependent interatomic potential (EDIP). The investigation of equilibrium state by conjuguate gradients suffers from a complex multi-minima energy surface. A dedicated procedure is therefore presented to provide a suitable initial configuration on the way to the minimum. The result fo… ▽ More The atomistic structure of the graphene buffer layer on Si-terminated SiC is studied using a modified environment-dependent interatomic potential (EDIP). The investigation of equilibrium state by conjuguate gradients suffers from a complex multi-minima energy surface. A dedicated procedure is therefore presented to provide a suitable initial configuration on the way to the minimum. The result forms an hexagonal pattern with unsticked rods to release the misfit with the surface. The structure presents an agreement with the global pattern obtained by experiments and even with the details of an ab initio calculation. △ Less

Submitted 10 December, 2009; originally announced December 2009.

Comments: 8 pages, 12 figures

Journal ref: Journal of Applied Physics, Vol. 107, p. 103514 (2010)

Molecular rectifying diodes from self-assembly on silicon

Authors: Stephane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

Abstract: We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-g… ▽ More We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries. △ Less

Submitted 26 May, 2003; originally announced May 2003.

Journal ref: Nano Letters, 2003, 3 (6), pp 741-746