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Hydrogen induces chiral conduction channels in the topological magnet
Authors:
Afrin N. Tamanna,
Ayesha Lakra,
Xiaxin Ding,
Entela Buzi,
Kyungwha Park,
Kamil Sobczak,
Haiming Deng,
Gargee Sharma,
Sumanta Tewari,
Lia Krusin-Elbaum
Abstract:
Chirality, a characteristic handedness that distinguishes 'left' from 'right', cuts widely across all of nature$^1$, from the structure of DNA$^2$ to opposite chirality of particles and antiparticles$^3$. In condensed matter chiral fermions have been identified in Weyl semimetals$^4$ through their unconventional electrodynamics arising from 'axial' charge imbalance between chiral Weyl nodes of top…
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Chirality, a characteristic handedness that distinguishes 'left' from 'right', cuts widely across all of nature$^1$, from the structure of DNA$^2$ to opposite chirality of particles and antiparticles$^3$. In condensed matter chiral fermions have been identified in Weyl semimetals$^4$ through their unconventional electrodynamics arising from 'axial' charge imbalance between chiral Weyl nodes of topologically nontrivial electronic bands. Up to now it has been challenging or impossible to create transport channels of Weyl fermions in a single material that could be easily configured for advancing chiral logic or spintronics$^{5,6}$. Here we generate chirality-directed conduction channels in inversion-symmetric Weyl ferromagnet (FM) $MnSb_2Te_4$, emergent from a deep connection between chirality in reciprocal and real space. We alter the bandstructure on-demand with an intake and a subsequent release of ionic hydrogen ($H^+$) $-$ a process we show to induce the tilt and rotation of Weyl bands. The transformed Weyl FM states feature a doubled Curie temperature $\geq50K$ and an enhanced angular transport chirality synchronous with a rare field-antisymmetric longitudinal resistance $-$ a low-field tunable 'chiral switch' that roots in the interplay of Berry curvature$^7$, chiral anomaly$^8$ and hydrogen-engendered mutation of Weyl nodes.
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Submitted 4 December, 2023;
originally announced December 2023.
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Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1-x topological materials with exceedingly high Curie temperature
Authors:
Candice R. Forrester,
Christophe Testelin,
Kaushini Wickramasinghe,
Ido Levy,
Dominique Demaille,
David Hrabovski,
Xiaxin Ding,
Lia Krusin-Elbaum,
Gustavo E. Lopez,
Maria C. Tamargo
Abstract:
Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and opt…
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Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and optimize TC, particularly through defect engineering of these structures. Most recently we showed evidence of TC values up to 80K for (MnSb2Te4)x(Sb2Te3)1-x, where x is greater than or equal to 0.7 and less than or equal to 0.85, by controlling the compositions and Mn content in these structures. Here we show further enhancement of the TC, as high as 100K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves reveal the presence of two TC components contributing to the overall value and propose TC1 and TC2 have distinct origins: excess Mn in SLs and Mn in Sb2-yMnyTe3QLs alloys, respectively. In pursuit of elucidating the mechanisms promoting higher Curie temperature values in this system, we show evidence of structural disorder where Mn is occupying not only Sb sites but also Te sites, providing evidence of significant excess Mn and a new crystal structure:(Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x. Our work shows progress in understanding how to control magnetic defects to enhance desired magnetic properties and the mechanism promoting these high TC in magnetic topological materials such as (Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x.
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Submitted 17 November, 2023;
originally announced November 2023.
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Tunable magnetic domains in ferrimagnetic MnSb$_2$Te$_4$
Authors:
Tatiana A. Webb,
Afrin N. Tamanna,
Xiaxin Ding,
Jikai Xu,
Lia Krusin-Elbaum,
Cory R. Dean,
Dmitri N. Basov,
Abhay N. Pasupathy
Abstract:
Highly tunable properties make Mn(Bi,Sb)$_2$Te$_4$ a rich playground for exploring the interplay between band topology and magnetism: On one end, MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator, while the magnetic structure of MnSb$_2$Te$_4$ (MST) can be tuned between antiferromagnetic and ferrimagnetic. Motivated to control electronic properties through real-space magnetic textures,…
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Highly tunable properties make Mn(Bi,Sb)$_2$Te$_4$ a rich playground for exploring the interplay between band topology and magnetism: On one end, MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator, while the magnetic structure of MnSb$_2$Te$_4$ (MST) can be tuned between antiferromagnetic and ferrimagnetic. Motivated to control electronic properties through real-space magnetic textures, we use magnetic force microscopy (MFM) to image the domains of ferrimagnetic MST. We find that magnetic field tunes between stripe and bubble domain morphologies, raising the possibility of topological spin textures. Moreover, we combine in situ transport with domain manipulation and imaging to both write MST device properties and directly measure the scaling of the Hall response with domain area. This work demonstrates measurement of the local anomalous Hall response using MFM, and opens the door to reconfigurable domain-based devices in the M(B,S)T family.
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Submitted 31 August, 2023;
originally announced August 2023.
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Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)x(MnSb2Te4)y Magnetic Topological Insulators
Authors:
Ido Levy,
Candice Forrester,
Haiming Deng,
Manuel Goldan,
Martha R. McCartney,
David J. Smith,
Christophe Testelin,
Lia Krusin-Elbaum,
Maria C. Tamargo
Abstract:
Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or ex…
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Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or excess Mn in the crystal lattice can induce a net ferromagnetic alignment. In this work we report the growth of (Sb2Te3)x(MnSb2Te4)y layers with varying Mn content by molecular beam epitaxy. The Mn flux fraction provided during growth controls the percent of MnSb2Te4 that is formed in the resulting layers by a self-assembly process. Highly crystalline layers with compositions varying between Sb2Te3 (y=0) and MnSb2Te4 (x=0) were obtained. The results show that Mn incorporates as a structural component to form MnSb2Te4, and as an impurity element both in Sb2Te3 and in MnSb2Te4. Two modifications of the growth conditions were implemented to enhance the incorporation of Mn as a structural element to form MnSb2Te4. Annealing of a thin portion of the layer at the beginning of growth (pre-anneal step), and increasing the growth temperature, both result in a larger percent of MnSb2Te4 for similar Mn flux fractions during growth. Samples having at least a few percent of MnSb2Te4 layers exhibit ferromagnetic behavior likely due to the excess Mn in the system which stabilizes on Sb sites as MnSb antisite defects.
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Submitted 12 December, 2021;
originally announced December 2021.
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Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Authors:
Joanna Sitnicka,
Kyungwha Park,
Paweł Skupiński,
Krzysztof Grasza,
Anna Reszka,
Kamil Sobczak,
Jolanta Borysiuk,
Zbigniew Adamus,
Mateusz Tokarczyk,
Andrei Avdonin,
Irina Fedorchenko,
Irina Abaloszewa,
Sylwia Turczyniak-Surdacka,
Natalia Olszowska,
Jacek Kolodziej,
Bogdan J. Kowalski,
Haiming Deng,
Marcin Konczykowski,
Lia Krusin-Elbaum,
Agnieszka Wolos
Abstract:
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compos…
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MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.
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Submitted 9 September, 2021; v1 submitted 31 August, 2021;
originally announced September 2021.
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Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk
Authors:
Haiming Deng,
Lukas Zhao,
Kyungwha Park,
Jiaqiang Yan,
Kamil Sobczak,
Lia Krusin-Elbaum
Abstract:
Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic state - it has been known to induce novel magnetoelectric effects in complex perovskites and modulate insulator-to-metal transition in a correlated Mott oxide. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classe…
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Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic state - it has been known to induce novel magnetoelectric effects in complex perovskites and modulate insulator-to-metal transition in a correlated Mott oxide. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets - the control of intrinsic bulk conduction that denies access to quantum surface transport. With electrons donated by a reversible binding of H+ ions to Te(Se) chalcogens, carrier densities are easily changed by over 10^20 cm^-3, allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels. The hydrogen-tuned topological materials are stable at room temperature and tunable disregarding bulk size, opening a breadth of platforms for harnessing emergent topological states.
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Submitted 12 February, 2021;
originally announced February 2021.
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Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice
Authors:
Haiming Deng,
Zhiyi Chen,
Agnieszka Wolos,
Marcin Konczykowski,
Kamil Sobczak,
Joanna Sitnicka,
Irina V. Fedorchenko,
Jolanta Borysiuk,
Tristan Heider,
Lukasz Plucinski,
Kyungwha Park,
Alexandru B. Georgescu,
Jennifer Cano,
Lia Krusin-Elbaum
Abstract:
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronic…
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The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.
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Submitted 28 January, 2020;
originally announced January 2020.
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Designer topological insulator with enhanced gap and suppressed bulk conduction in Bi2Se3/Sb2Te3 ultra-short period superlattices
Authors:
Ido Levy,
Cody Youmans,
Thor Garcia,
Haiming Deng,
Steven Alsheimer,
Christophe Testelin,
Lia Krusin-Elbaum,
Pouyan Ghaemi,
Maria Tamargo
Abstract:
A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background do** by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm…
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A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background do** by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm to 5 nm, respectively. Tight binding calculations show that in the very thin period regime, a significant SGE can be achieved by the appropriate choice of materials. The ultrathin SL of alternating Bi2Se3 and Sb2Te3 layers behaves as a new designer material with a bulk bandgap as much as 60% larger than the bandgap of the constituent layer with the largest bandgap, while retaining topological surface features. Analysis of the weak antilocalization (WAL) cusp evident in the low temperature magneto-conductance of a very thin period SL sample grown confirms that the top and bottom surfaces of the SL structure behave as Dirac surface states. This approach represents a promising and yet to be explored platform for building truly insulating bulk TIs.
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Submitted 9 January, 2020;
originally announced January 2020.
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Spin memory of the topological material under strong disorder
Authors:
Inna Korzhovska,
Haiming Deng,
Lukas Zhao,
Zhiyi Chen,
Marcin Konczykowski,
Shihua Zhao,
Simone Raoux,
Lia Krusin-Elbaum
Abstract:
Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The ultimate disorder limits to topological protection are still unknown, however, a number of theories predict that even in the amorphous state a quantized conduct…
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Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The ultimate disorder limits to topological protection are still unknown, however, a number of theories predict that even in the amorphous state a quantized conductance might yet reemerge. Here we report a directly detected robust spin response in structurally disordered thin films of the topological material Sb2Te3 free of extrinsic magnetic dopants, which we controllably tune from a strong (amorphous) to a weak crystalline) disorder state. The magnetic signal onsets at a surprisingly high temperature (~ 200 K) and eventually ceases within the crystalline state. We demonstrate that in a strongly disordered state disorder-induced spin correlations dominate the transport of charge - they engender a spin memory phenomenon, generated by the nonequilibrium charge currents controlled by localized spins. The negative magnetoresistance (MR) in the extensive spin-memory phase space is isotropic. Within the crystalline state, it transitions into a positive MR corresponding to the weak antilocalization (WAL) quantum interference effect, with a 2D scaling characteristic of the topological state. Our findings demonstrate that these nonequilibrium currents set a disorder threshold to the topological state; they lay out a path to tunable spin-dependent charge transport and point to new possibilities of spin control by disorder engineering of topological materials
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Submitted 31 October, 2019;
originally announced November 2019.
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Stable topological insulators achieved using high energy electron beams
Authors:
Lukas Zhao,
Marcin Konczykowski,
Haiming Deng,
Inna Korzhovska,
Milan Begliarbekov,
Zhiyi Chen,
Evangelos Papalazarou,
Marino Marsi,
Luca Perfetti,
Andrzej Hruban,
Agnieszka Wołoś,
Lia Krusin-Elbaum
Abstract:
Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Ferm…
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Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.
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Submitted 23 May, 2016;
originally announced May 2016.
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Propagation of Surface Plasmon Polaritons in Thin Films of Topological Insulators
Authors:
Yury Deshko,
Lia Krusin-Elbaum,
Vinod Menon,
Alexander Khanikaev,
Jacob Trevino
Abstract:
The propagation of surface plasmon polaritons in thin films of topological insulators is studied. The materials considered are second generation three dimensional topological insulators Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$. Dispersion relations and propagation lengths are estimated numerically, taking into account the variation of bulk dielectric functions of topological insulators as well…
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The propagation of surface plasmon polaritons in thin films of topological insulators is studied. The materials considered are second generation three dimensional topological insulators Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$. Dispersion relations and propagation lengths are estimated numerically, taking into account the variation of bulk dielectric functions of topological insulators as well as substrate using the Drude-Lorentz model. Key factors affecting propagation length are identified and ways to modify the dispersion relations are suggested. The explanation of the apparent discrepancy between the experimental data for Bi$_2$Se$_3$ and theory is proposed.
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Submitted 25 January, 2016; v1 submitted 19 January, 2016;
originally announced January 2016.
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Emergent surface superconductivity of nanosized Dirac puddles in a topological insulator
Authors:
Lukas Zhao,
Haiming Deng,
Inna Korzhovska,
Jeff Secor,
Milan Begliarbekov,
Zhiyi Chen,
Erick Andrade,
Ethan Rosenthal,
Abhay Pasupathy,
Vadim Oganesyan,
Lia Krusin-Elbaum
Abstract:
Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface superconductivity in a topological material (Sb2Te3) with resistive transition at a temperature of ~9 K induced through a minor tuning of growth chemistry that…
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Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface superconductivity in a topological material (Sb2Te3) with resistive transition at a temperature of ~9 K induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by about two orders of magnitude reduction of carrier density and by very large (~25,000 cm^2/Vs) carrier mobility. Direct evidence from scanning tunneling spectroscopy and from magnetic response show that the superconducting condensate forms in surface puddles at unprecedentedly higher temperatures, near 60 K and above. The new superconducting state we observe to emerge in puddles can be tuned by the topological material's parameters such as Fermi velocity and mean free path through band engineering; it could potentially become a hunting ground for Majorana modes6 and lead to a disruptive paradigm change9 in how quantum information is processed.
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Submitted 5 August, 2014;
originally announced August 2014.
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Singular robust room-temperature spin response from topological Dirac fermions
Authors:
Lukas Zhao,
Haiming Deng,
Inna Korshovska,
Zhiyi Chen,
Marcin Konczykowski,
Andrzej Hruban,
Vadim Oganesyan,
Lia Krusin-Elbaum
Abstract:
Topological insulators are a class of solids in which the nontrivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity scattering. In three-dimensional (3D) topological insulators, however, the surface Dirac fermions intermix with the conducting bulk, thereby complicating access to the low energy (Dirac point) charge transport or magnetic response.…
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Topological insulators are a class of solids in which the nontrivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity scattering. In three-dimensional (3D) topological insulators, however, the surface Dirac fermions intermix with the conducting bulk, thereby complicating access to the low energy (Dirac point) charge transport or magnetic response. Here we use differential magnetometry to probe spin rotation in the 3D topological material family (Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$). We report a paramagnetic singularity in the magnetic susceptibility at low magnetic fields which persists up to room temperature, and which we demonstrate to arise from the surfaces of the samples. The singularity is universal to the entire family, largely independent of the bulk carrier density, and consistent with the existence of electronic states near the spin-degenerate Dirac point of the 2D helical metal. The exceptional thermal stability of the signal points to an intrinsic surface cooling process, likely of thermoelectric origin, and establishes a sustainable platform for the singular field-tunable Dirac spin response.
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Submitted 24 July, 2014;
originally announced July 2014.
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Entanglement of Solid Vortex Matter: A Boomerang Shaped Reduction Forced by Disorder in Interlayer Phase Coherence in Bi2Sr2CaCu2O8+y
Authors:
T. Kato,
T. Shibauchi,
Y. Matsuda,
J. R. Thompson,
L. Krusin-Elbaum
Abstract:
We present evidence for entangled solid vortex matter in a glassy state in a layered superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$ containing randomly splayed linear defects. The interlayer phase coherence--probed by the Josephson plasma resonance--is enhanced at high temperatures, reflecting the recoupling of vortex liquid by the defects. At low temperatures in the vortex solid state, the interl…
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We present evidence for entangled solid vortex matter in a glassy state in a layered superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$ containing randomly splayed linear defects. The interlayer phase coherence--probed by the Josephson plasma resonance--is enhanced at high temperatures, reflecting the recoupling of vortex liquid by the defects. At low temperatures in the vortex solid state, the interlayer coherence follows a boomerang-shaped reentrant temperature path with an unusual low field decrease in coherence, indicative of meandering vortices. We uncover a distinct temperature scaling between in-plane and out-of-plane critical currents with opposing dependencies on field and time, consistent with the theoretically proposed "splayed-glass" state.
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Submitted 15 June, 2008;
originally announced June 2008.
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Field-induced quantum critical route to a Fermi liquid in high-temperature superconductors
Authors:
T. Shibauchi,
L. Krusin-Elbaum,
M. Hasegawa,
Y. Kasahara,
R. Okazaki,
Y. Matsuda
Abstract:
In high transition temperature (T_c) superconductivity, charge do** is a natural tuning parameter that takes copper oxides from the antiferromagnet to the superconducting region. In the metallic state above T_c the standard Landau's Fermi-liquid theory of metals as typified by the temperature squared (T^2) dependence of resistivity appears to break down. Whether the origin of the non-Fermi-liq…
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In high transition temperature (T_c) superconductivity, charge do** is a natural tuning parameter that takes copper oxides from the antiferromagnet to the superconducting region. In the metallic state above T_c the standard Landau's Fermi-liquid theory of metals as typified by the temperature squared (T^2) dependence of resistivity appears to break down. Whether the origin of the non-Fermi-liquid behavior is related to physics specific to the cuprates is a fundamental question still under debate. We uncover a new transformation from the non-Fermi- to a standard Fermi-liquid state driven not by do** but by magnetic field in the overdoped high-T_c superconductor Tl_2Ba_2CuO_{6+x}. From the c-axis resistivity measured up to 45 T, we show that the Fermi-liquid features appear above a sufficiently high field which decreases linearly with temperature and lands at a quantum critical point near the superconductivity's upper critical field -- with the Fermi-liquid coefficient of the T^2 dependence showing a power-law diverging behavior on the approach to the critical point. This field-induced quantum criticality bears a striking resemblance to that in quasi-two dimensional heavy-Fermion superconductors, suggesting a common underlying spin-related physics in these superconductors with strong electron correlations.
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Submitted 15 May, 2008;
originally announced May 2008.
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Uncommonly High Upper Critical Field in the Superconducting KOs$_2$O$_6$ Pyrochlore
Authors:
T. Shibauchi,
L. Krusin-Elbaum,
Y. Kasahara,
Y. Shimono,
Y. Matsuda,
R. D. McDonald,
C. H. Mielke,
S. Yonezawa,
Z. Hiroi,
M. Arai,
T. Kita,
G. Blatter,
M. Sigrist
Abstract:
The entire temperature dependence of the upper critical field $H_{\rm c2}$ in the $β$-pyrochlore KOs$_2$O$_6$ is obtained from high-field resistivity and magnetic measurements. Both techniques identically give $H_{\rm c2}(T \simeq 0 {\rm K})$ not only surprisingly high ($\sim 33$ T), but also the approach to it unusually temperature-\emph{linear} all the way below $T_{\rm c}$ (= 9.6 K). We show…
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The entire temperature dependence of the upper critical field $H_{\rm c2}$ in the $β$-pyrochlore KOs$_2$O$_6$ is obtained from high-field resistivity and magnetic measurements. Both techniques identically give $H_{\rm c2}(T \simeq 0 {\rm K})$ not only surprisingly high ($\sim 33$ T), but also the approach to it unusually temperature-\emph{linear} all the way below $T_{\rm c}$ (= 9.6 K). We show that, while $H_{\rm c2}(0)$ exceeds a simple spin-singlet paramagnetic limit $H_{\rm P}$, it is well below an $H_{\rm P}$ enhanced due to the missing spatial inversion symmetry reported recently in KOs$_2$O$_6$, ensuring that the pair-breaking here is executed by orbital degrees. {\it Ab initio} calculations of orbital $H_{\rm c2}$ show that the unusual temperature dependence is reproduced if dominant s-wave superconductivity resides on the smaller closed Fermi surfaces.
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Submitted 12 November, 2006; v1 submitted 10 March, 2006;
originally announced March 2006.
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Zeeman and Orbital Limiting Fields: Separated Spin and Charge Degrees of Freedom in Cuprate Superconductors
Authors:
L. Krusin-Elbaum,
G. Blatter,
T. Shibauchi
Abstract:
Recent in-plane thermal (Nernst) and interlayer (tunnelling) transport experiments in Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$ high temperature superconductors report hugely different limiting magnetic fields. Based on pairing (and the uncertainty principle) combined with the definitions of the Zeeman energy and the magnetic length, we show that in the underdoped regime both fields convert to the same (nor…
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Recent in-plane thermal (Nernst) and interlayer (tunnelling) transport experiments in Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$ high temperature superconductors report hugely different limiting magnetic fields. Based on pairing (and the uncertainty principle) combined with the definitions of the Zeeman energy and the magnetic length, we show that in the underdoped regime both fields convert to the same (normal state) pseudogap energy scale $T^*$ upon transformation as orbital and spin (Zeeman) critical fields, respectively. We reconcile these seemingly disparate findings invoking separated spin and charge degrees of freedom residing in different regions of a truncated Fermi surface.
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Submitted 18 May, 2004;
originally announced May 2004.
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Pinning Action of Correlated Disorder against Equilibrium Properties of HgBa$_2$Ca$_2$Cu$_3$O$_x$: a Delicate Balance
Authors:
J. R. Thompson,
J. G. Ossandon,
L. Krusin-Elbaum,
D. K. Christen,
H. J. Kim,
K. J. Song,
K. D. Sorge,
J. L. Ullmann
Abstract:
We report significant alteration of the equilibrium properties of the superconductor HgBa$_2$Ca$_2$Cu$_3$O$_x$ when correlated disorder in the form of randomly oriented columnar tracks is introduced via induced fission of Hg-nuclei. From studies of the equilibrium magnetization $M_{eq}$ and the persistent current density over a wide range of temperatures, applied magnetic fields, and track densi…
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We report significant alteration of the equilibrium properties of the superconductor HgBa$_2$Ca$_2$Cu$_3$O$_x$ when correlated disorder in the form of randomly oriented columnar tracks is introduced via induced fission of Hg-nuclei. From studies of the equilibrium magnetization $M_{eq}$ and the persistent current density over a wide range of temperatures, applied magnetic fields, and track densities up to a ``matching field'' of 3.4 Tesla, we observe that the addition of more columnar tracks acting as pinning centers is progressively offset by reductions in the magnitude of $M_{eq}$. Invoking anisotropy induced ``refocusing'' of the random track array and incorporating vortex-defect interactions, we find that this corresponds to increases in the London penetration depth $λ$; this reduces the vortex line energy and consequently reduces the pinning effectiveness of the tracks.
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Submitted 7 September, 2003;
originally announced September 2003.
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Current density and reversible magnetization of HgBa(2)Ca(2)Cu(3)O(x) superconductors containing randomly oriented columnar defects
Authors:
J. R. Thompson,
J. G. Ossandon,
L. Krusin-Elbaum,
H. J. Kim,
D. K. Christen,
K. J. Song,
K. D. Sorge,
J. L. Ullmann
Abstract:
Bulk polycrystalline HgBa(2)Ca(2)Cu(3)O(x) materials were irradiated with 0.8 GeV protons to form randomly oriented columnar defects, by induced fission of Hg-nuclei. Proton fluences from 0 to 35 times 10^{16} cm^{-2} were used to install defects with area densities up to a "matching field" of 3.4 Tesla. Studies were conducted on the dependence of the equilibrium magnetization and the intragrain…
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Bulk polycrystalline HgBa(2)Ca(2)Cu(3)O(x) materials were irradiated with 0.8 GeV protons to form randomly oriented columnar defects, by induced fission of Hg-nuclei. Proton fluences from 0 to 35 times 10^{16} cm^{-2} were used to install defects with area densities up to a "matching field" of 3.4 Tesla. Studies were conducted on the dependence of the equilibrium magnetization and the intragrain persistent current density on temperature and applied magnetic field, at various defect densities. The magnetization was modeled using London theory with the addition of vortex-defect interactions.
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Submitted 29 April, 2002;
originally announced April 2002.
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Vortex pinning in high-Tc materials via randomly oriented columnar defects, created by GeV proton-induced fission fragments
Authors:
J. R. Thompson,
J. G. Ossandon,
L. Krusin-Elbaum,
H. J. Kim,
K. J. Song,
D. K. Christen,
J. L. Ullmann
Abstract:
Extensive work has shown that irradiation with 0.8 GeV protons can produce randomly oriented columnar defects (CD's) in a large number of HTS materials, specifically those cuprates containing Hg, Tl, Pb, Bi, and similar heavy elements. Absorbing the incident proton causes the nucleus of these species to fission, and the recoiling fission fragments create amorphous tracks, i.e., CD's. The superco…
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Extensive work has shown that irradiation with 0.8 GeV protons can produce randomly oriented columnar defects (CD's) in a large number of HTS materials, specifically those cuprates containing Hg, Tl, Pb, Bi, and similar heavy elements. Absorbing the incident proton causes the nucleus of these species to fission, and the recoiling fission fragments create amorphous tracks, i.e., CD's. The superconductive transition temperature Tc decreases linearly with proton fluence and we analyze how the rate depends on the family of superconductors. In a study of Tl-2212 materials, adding defects decreases the equilibrium magnetization Meq(H) significantly in magnitude and changes its field dependence; this result is modeled in terms of vortex pinning. Analysis of the irreversible magnetization and its time dependence shows marked increases in the persistent current density and effective pinning energy, and leads to an estimate for the elementary attempt time for vortex hop**, tau ~ 4x10^(-9) s.
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Submitted 4 October, 2001;
originally announced October 2001.
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Stable ultrahigh-density magneto-optical recordings using introduced linear defects
Authors:
L. Krusin-Elbaum,
T. Shibauchi,
B. Argyle,
L. Gignac,
D. Weller
Abstract:
The stability of data bits in magnetic recording media at ultrahigh densities is compromised by thermal `flips' -- magnetic spin reversals -- of nano-sized spin domains, which erase the stored information. Media that are magnetized perpendicular to the plane of the film, such as ultrathin cobalt films or multilayered structures, are more stable against thermal self-erasure than conventional memo…
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The stability of data bits in magnetic recording media at ultrahigh densities is compromised by thermal `flips' -- magnetic spin reversals -- of nano-sized spin domains, which erase the stored information. Media that are magnetized perpendicular to the plane of the film, such as ultrathin cobalt films or multilayered structures, are more stable against thermal self-erasure than conventional memory devices. In this context, magneto-optical memories seem particularly promising for ultrahigh-density recording on portable disks, and bit densities of $\sim$100 Gbit inch$^{-2}$ have been demonstrated using recent advances in the bit writing and reading techniques. But the roughness and mobility of the magnetic domain walls prevents closer packing of the magnetic bits, and therefore presents a challenge to reaching even higher bit densities. Here we report that the strain imposed by a linear defect in a magnetic thin film can smooth rough domain walls over regions hundreds of micrometers in size, and halt their motion. A scaling analysis of this process, based on the generic physics of disorder-controlled elastic lines, points to a simple way by which magnetic media might be prepared that can store data at densities in excess of 1 Tbit inch$^{-2}$.
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Submitted 1 May, 2001;
originally announced May 2001.
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Closing the Pseudogap by Zeeman Splitting in Bi_2Sr_2CaCu_2O_8+y at High Magnetic Fields
Authors:
T. Shibauchi,
L. Krusin-Elbaum,
Ming Li,
M. P. Maley,
P. H. Kes
Abstract:
Interlayer tunneling resistivity is used to probe the low-energy density-of-states (DOS) depletion due to the pseudogap in the normal state of Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$. Measurements up to 60 T reveal that a field that restores DOS to its ungapped state shows strikingly different temperature and do** dependencies from the characteristic fields of the superconducting state. The pseudogap cl…
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Interlayer tunneling resistivity is used to probe the low-energy density-of-states (DOS) depletion due to the pseudogap in the normal state of Bi$_2$Sr$_2$CaCu$_2$O$_{8+y}$. Measurements up to 60 T reveal that a field that restores DOS to its ungapped state shows strikingly different temperature and do** dependencies from the characteristic fields of the superconducting state. The pseudogap closing field and the pseudogap temperature $T^{\star}$ evaluated independently are related through a simple Zeeman energy scaling. These findings indicate a predominant role of spins over the orbital effects in the formation of the pseudogap.
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Submitted 13 April, 2001;
originally announced April 2001.
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Suppression of matching field effects by splay and pinning energy dispersion in YBa_2Cu_3O_7 with columnar defects
Authors:
D. Niebieskikwiat,
A. V. Silhanek,
L. Civale,
G. Nieva,
P. Levy,
L. Krusin-Elbaum
Abstract:
We report measurements of the irreversible magnetization M_i of a large number of YBa_2Cu_3O_7 single crystals with columnar defects (CD). Some of them exhibit a maximum in M_i when the density of vortices equals the density of tracks, at temperatures above 40K. We show that the observation of these matching field effects is constrained to those crystals where the orientational and pinning energ…
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We report measurements of the irreversible magnetization M_i of a large number of YBa_2Cu_3O_7 single crystals with columnar defects (CD). Some of them exhibit a maximum in M_i when the density of vortices equals the density of tracks, at temperatures above 40K. We show that the observation of these matching field effects is constrained to those crystals where the orientational and pinning energy dispersion of the CD system lies below a certain threshold. The amount of such dispersion is determined by the mass and energy of the irradiation ions, and by the crystal thickness. Time relaxation measurements show that the matching effects are associated with a reduction of the creep rate, and occur deep into the collective pinning regime.
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Submitted 20 September, 2000;
originally announced September 2000.
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High-Field Quasiparticle Tunneling in Bi_2Sr_2CaCu_2O_8+delta: Negative Magnetoresistance in the Superconducting State
Authors:
N. Morozov,
L. Krusin-Elbaum,
T. Shibauchi,
L. N. Bulaevskii,
M. P. Maley,
Yu. I. Latyshev,
T. Yamashita
Abstract:
We report on the c-axis resistivity rho_c(H) in Bi_2Sr_2CaCu_2O_{8+δ} that peaks in quasi-static magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity σ_c (H), we find that the negative slope of ρ_c(H) above the peak is due to quasiparticle tunneling conductivity σ_q(H) across the CuO_2 layers below H_{c2}. At high fields (a) σ_…
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We report on the c-axis resistivity rho_c(H) in Bi_2Sr_2CaCu_2O_{8+δ} that peaks in quasi-static magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity σ_c (H), we find that the negative slope of ρ_c(H) above the peak is due to quasiparticle tunneling conductivity σ_q(H) across the CuO_2 layers below H_{c2}. At high fields (a) σ_q(H) grows linearly with H, and (b) ρ_c(T) tends to saturate (sigma_c \neq 0) as T->0, consistent with the scattering at the nodes of the d-gap. A superlinear sigma_q(H) marks the normal state above T_c.
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Submitted 10 December, 1999;
originally announced December 1999.
