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Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
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Lorentz-boost-driven magneto-optics in a Dirac nodal-line semimetal
Authors:
J. Wyzula,
X. Lu,
D. Santos-Cottin,
D. K. Mukherjee,
I. Mohelsky,
F. Le Mardele,
J. Novak,
M. Novak,
R. Sankar,
Y. Krupko,
B. A. Piot,
W. -L. Lee,
A. Akrap,
M. Potemski,
M. O. Goerbig,
M. Orlita
Abstract:
Optical response of crystalline solids is to a large extent driven by excitations that promote electrons among individual bands. This allows one to apply optical and magneto-optical methods to determine experimentally the energy band gap - a fundamental property crucial to our understanding of any solid - with a great precision. Here we show that such conventional methods, applied with great succe…
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Optical response of crystalline solids is to a large extent driven by excitations that promote electrons among individual bands. This allows one to apply optical and magneto-optical methods to determine experimentally the energy band gap - a fundamental property crucial to our understanding of any solid - with a great precision. Here we show that such conventional methods, applied with great success to many materials in the past, do not work in topological Dirac semimetals with a dispersive nodal line. There, the optically deduced band gap depends on how the magnetic field is oriented with respect to the crystal axes. Such highly unusual behaviour is explained in terms of band-gap renormalization driven by Lorentz boosts.
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Submitted 21 July, 2022; v1 submitted 14 October, 2021;
originally announced October 2021.
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Landau level spectroscopy of Bi$_2$Te$_3$
Authors:
I. Mohelsky,
A. Dubroka,
J. Wyzula,
A. Slobodeniuk,
G. Martinez,
Y. Krupko,
B. A. Piot,
O. Caha,
J. Humlicek,
G. Bauer,
G. Springholz,
M. Orlita
Abstract:
Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator Bi$_2$Te$_3$ epitaxially grown on a BaF$_2$ substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches $E_g=(175\pm 5)$~meV at low temperatur…
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Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator Bi$_2$Te$_3$ epitaxially grown on a BaF$_2$ substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches $E_g=(175\pm 5)$~meV at low temperatures and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy. Notably, our magneto-optical data do not indicate any band inversion. This suggests that the fundamental band gap is relatively distant from the $Γ$ point where profound inversion exists andgives rise to relativistic-like surface states of Bi$_2$Te$_3$.
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Submitted 21 July, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Kerr non-linearity in a superconducting Josephson metamaterial
Authors:
Yu. Krupko,
V. D. Nguyen,
T. Weißl,
É. Dumur,
J. Puertas,
C. Naud,
F. W. J. Hekking,
D. M. Basko,
O. Buisson,
N. Roch,
W. Hasch-Guichard
Abstract:
We present a detailed experimental and theoretical analysis of the dispersion and non-linear Kerr frequency shifts of plasma modes in a one-dimensional Josephson junction chain containing 500 SQUIDs in the regime of weak nonlinearity. The measured low-power dispersion curve agrees perfectly with the theoretical model if we take into account the Kerr renormalisation of the bare frequencies and the…
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We present a detailed experimental and theoretical analysis of the dispersion and non-linear Kerr frequency shifts of plasma modes in a one-dimensional Josephson junction chain containing 500 SQUIDs in the regime of weak nonlinearity. The measured low-power dispersion curve agrees perfectly with the theoretical model if we take into account the Kerr renormalisation of the bare frequencies and the long-range nature of the island charge screening by a remote ground plane. We measured the self- and cross-Kerr shifts for the frequencies of the eight lowest modes in the chain. We compare the measured Kerr coefficients with theory and find good agreement.
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Submitted 5 July, 2018; v1 submitted 4 July, 2018;
originally announced July 2018.
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A tunable Josephson platform to explore many-body quantum optics in circuit-QED
Authors:
Javier Puertas Martinez,
Sebastien Leger,
Nicolas Gheeraert,
Remy Dassonneville,
Luca Planat,
Farshad Foroughi,
Yuriy Krupko,
Olivier Buisson,
Cecile Naud,
Wiebke Guichard,
Serge Florens,
Izak Snyman,
Nicolas Roch
Abstract:
Coupling an isolated emitter to a single mode of the electromagnetic field is now routinely achieved and well understood. Current efforts aim to explore the coherent dynamics of emitters coupled to several electromagnetic modes (EM). freedom. Recently, ultrastrong coupling to a transmission line has been achieved where the emitter resonance broadens to a significant fraction of its frequency. In t…
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Coupling an isolated emitter to a single mode of the electromagnetic field is now routinely achieved and well understood. Current efforts aim to explore the coherent dynamics of emitters coupled to several electromagnetic modes (EM). freedom. Recently, ultrastrong coupling to a transmission line has been achieved where the emitter resonance broadens to a significant fraction of its frequency. In this work we gain significantly improved control over this regime. We do so by combining the simplicity of a transmon qubit and a bespoke EM environment with a high density of discrete modes, hosted inside a superconducting metamaterial. This produces a unique device in which the hybridisation between the qubit and up to 10 environmental modes can be monitored directly. Moreover the frequency and broadening of the qubit resonance can be tuned independently of each other in situ. We experimentally demonstrate that our device combines this tunability with ultrastrong coupling and a qubit nonlinearity comparable to the other relevant energy scales in the system. We also develop a quantitative theoretical description that does not contain any phenomenological parameters and that accurately takes into account vacuum fluctuations of our large scale quantum circuit in the regime of ultrastrong coupling and intermediate non-linearity. The demonstration of this new platform combined with a quantitative modelling brings closer the prospect of experimentally studying many-body effects in quantum optics. A limitation of the current device is the intermediate nonlinearity of the qubit. Pushing it further will induce fully developed many-body effects, such as a giant Lamb shift or nonclassical states of multimode optical fields. Observing such effects would establish interesting links between quantum optics and the physics of quantum impurities.
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Submitted 9 April, 2019; v1 submitted 2 February, 2018;
originally announced February 2018.
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Quasi-two-dimensional Fermi surfaces with localized $f$ electrons in the layered heavy-fermion compound CePt$_2$In$_7$
Authors:
K. Götze,
Y. Krupko,
J. A. N. Bruin,
J. Klotz,
R. D. H. Hinlopen,
S. Ota,
Y. Hirose,
H. Harima,
R. Settai,
A. McCollam,
I. Sheikin
Abstract:
We report measurements of the de Haas-van Alphen effect in the layered heavy-fermion compound CePt$_2$In$_7$ in high magnetic fields up to 35 T. Above an angle-dependent threshold field, we observed several de Haas-van Alphen frequencies originating from almost ideally two-dimensional Fermi surfaces. The frequencies are similar to those previously observed to develop only above a much higher field…
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We report measurements of the de Haas-van Alphen effect in the layered heavy-fermion compound CePt$_2$In$_7$ in high magnetic fields up to 35 T. Above an angle-dependent threshold field, we observed several de Haas-van Alphen frequencies originating from almost ideally two-dimensional Fermi surfaces. The frequencies are similar to those previously observed to develop only above a much higher field of 45 T, where a clear anomaly was detected and proposed to originate from a change in the electronic structure [M. M. Altarawneh et al., Phys. Rev. B 83, 081103 (2011)]. Our experimental results are compared with band structure calculations performed for both CePt$_2$In$_7$ and LaPt$_2$In$_7$, and the comparison suggests localized $f$ electrons in CePt$_2$In$_7$. This conclusion is further supported by comparing experimentally observed Fermi surfaces in CePt$_2$In$_7$ and PrPt$_2$In$_7$, which are found to be almost identical. The measured effective masses in CePt$_2$In$_7$ are only moderately enhanced above the bare electron mass $m_0$, from 2$m_0$ to 6$m_0$.
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Submitted 29 August, 2017;
originally announced August 2017.
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Field induced Lifshitz transition in UPt$_2$Si$_2$: Fermi surface under extreme conditions
Authors:
D. Schulze Grachtrup,
N. Steinki,
S. Süllow,
Z. Cakir,
G. Zwicknagl,
Y. Krupko,
I. Sheikin,
M. Jaime,
J. A. Mydosh
Abstract:
We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$ axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual natu…
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We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$ axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual nature of the uranium 5$f$ electrons, we find evidence for field induced topological changes of the Fermi surface due to at least one Lifshitz transition. Furthermore, we find a unique history dependence of the magnetotransport and magnetostriction data, indicating that the Lifshitz type transition is of a discontinuous nature, as predicted for interacting electron systems.
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Submitted 6 March, 2017; v1 submitted 4 October, 2016;
originally announced October 2016.
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Specific heat in high magnetic fields and magnetic phase diagram of CePt$_2$In$_7$
Authors:
Y. Krupko,
A. Demuer,
S. Ota,
Y. Hirose,
R. Settai,
I. Sheikin
Abstract:
We report specific heat measurements on a high quality single crystal of the heavy-fermion compound CePt$_2$In$_7$ in magnetic fields up to 27 T. The zero-field specific heat data above the Néel temperature, $T_N$, suggest a moderately enhanced value of the electronic specific heat coefficient $γ= 180 \; \rm{mJ/K^2mol}$. For $T<T_N$, the data at zero applied magnetic field are consistent with the…
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We report specific heat measurements on a high quality single crystal of the heavy-fermion compound CePt$_2$In$_7$ in magnetic fields up to 27 T. The zero-field specific heat data above the Néel temperature, $T_N$, suggest a moderately enhanced value of the electronic specific heat coefficient $γ= 180 \; \rm{mJ/K^2mol}$. For $T<T_N$, the data at zero applied magnetic field are consistent with the existence of an anisotropic spin-density wave opening a gap on almost entire Fermi surface, suggesting extreme two-dimensional electronic and magnetic structures for CePt$_2$In$_7$. $T_N$ is monotonically suppressed by magnetic field applied along the $c$-axis. When field is applied parallel to the $a$-axis, $T_N$ first increases at low field up to about 10 T and then decreases monotonically at higher field. Magnetic phase diagram based on specific heat measurements suggests that a field-induced quantum critical point is likely to occur slightly below 60 T for both principal orientations of the magnetic field.
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Submitted 22 February, 2016;
originally announced February 2016.
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Unexpectedly allowed transition in two inductively coupled transmons
Authors:
Étienne Dumur,
Bruno Küng,
Alexey Feofanov,
Thomas Weißl,
Yuriy Krupko,
Nicolas Roch,
Cécile Naud,
Wiebke Guichard,
Olivier Buisson
Abstract:
We present experimental results in which the unexpected zero-two transition of a circuit composed of two inductively coupled transmons is observed. This transition shows an unusual magnetic flux dependence with a clear disappearance at zero magnetic flux. In a transmon qubit the symmetry of the wave functions prevents this transition to occur due to selection rule. In our circuit the Josephson eff…
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We present experimental results in which the unexpected zero-two transition of a circuit composed of two inductively coupled transmons is observed. This transition shows an unusual magnetic flux dependence with a clear disappearance at zero magnetic flux. In a transmon qubit the symmetry of the wave functions prevents this transition to occur due to selection rule. In our circuit the Josephson effect introduces strong couplings between the two normal modes of the artificial atom. This leads to a coherent superposition of states from the two modes enabling such transitions to occur.
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Submitted 20 January, 2016;
originally announced January 2016.
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Field-Induced Lifshitz Transition without Metamagnetism in CeIrIn$_5$
Authors:
D. Aoki,
G. Seyfarth,
A. Pourret,
A. Gourgout,
A. McCollam,
J. A. N. Bruin,
Y. Krupko,
I. Sheikin
Abstract:
We report high magnetic field measurements of magnetic torque, thermoelectric power (TEP), magnetization, and de Haas-van Alphen (dHvA) effect in CeIrIn$_5$ across 28 T, where a metamagnetic transition was suggested in previous studies. The TEP displays two maxima at 28 T and 32 T. Above 28 T, a new, low dHvA frequency with strongly enhanced effective mass emerges, while the highest frequency obse…
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We report high magnetic field measurements of magnetic torque, thermoelectric power (TEP), magnetization, and de Haas-van Alphen (dHvA) effect in CeIrIn$_5$ across 28 T, where a metamagnetic transition was suggested in previous studies. The TEP displays two maxima at 28 T and 32 T. Above 28 T, a new, low dHvA frequency with strongly enhanced effective mass emerges, while the highest frequency observed at low field disappears entirely. This suggests a field-induced Lifshitz transition. However, longitudinal magnetization does not show any anomaly up to 33 T, thus ruling out a metamagnetic transition at 28 T.
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Submitted 23 December, 2015;
originally announced December 2015.
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Fine structure of phonon replicas in a tunnel spectrum of a GaAs quantum well
Authors:
V. G. Krishtop,
V. G. Popov,
M. Henini,
Yu. Krupko,
J. -C. Portal
Abstract:
A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of…
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A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of two models: LO-phonon assisted tunneling and resonant tunneling of polarons.
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Submitted 2 February, 2014;
originally announced February 2014.
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The resistance of 2D Topological insulator in the absence of the quantized transport
Authors:
G. M. Gusev,
Z. D. Kvon,
E. B Olshanetsky,
A. D. Levin,
Y. Krupko,
J. C. Portal,
N. N. Mikhailov,
S. A. Dvoretsky
Abstract:
We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topological insulator with a dominant edge state contribution. The results are inconsistent with theoretical models developed within the framework of the helic…
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We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topological insulator with a dominant edge state contribution. The results are inconsistent with theoretical models developed within the framework of the helical Luttinger liquid.
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Submitted 20 August, 2013;
originally announced August 2013.
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Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry
Authors:
S. Sassine,
Yu. Krupko,
J. -C. Portal,
Z. D. Kvon,
R. Murali,
K. P. Martin,
G. Hill,
A. D. Wieck
Abstract:
We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced in a high mobility two-dimensional electron gas based on AlGaAs/GaAs heterojunction, by patterning an array of artificial semi-discs-shaped antidots. We…
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We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced in a high mobility two-dimensional electron gas based on AlGaAs/GaAs heterojunction, by patterning an array of artificial semi-discs-shaped antidots. We show that the direction of the transport is efficiently changed by microwave polarization. The dependence of the effect on magnetic field and temperature is investigated. This represents a significant step towards the realization of new microwave detectors and current generators.
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Submitted 28 February, 2008;
originally announced February 2008.
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Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling
Authors:
L. Smrcka,
N. A. Goncharuk,
P. Svoboda,
P. Vasek,
Yu. Krupko,
W. Wegscheider
Abstract:
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkab…
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We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.
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Submitted 25 July, 2007;
originally announced July 2007.
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Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices
Authors:
N. A. Goncharuk,
L. Smrcka,
P. Svoboda,
P. Vasek,
J. Kucera,
Yu. Krupko,
W. Wegscheider
Abstract:
The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlatti…
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The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.
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Submitted 31 May, 2007;
originally announced May 2007.
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Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields
Authors:
L. Smrčka,
P. Vašek,
P. Svoboda,
N. A. Goncharuk,
O. Pacherová,
Yu. Krupko,
Y. Sheikin
Abstract:
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to r…
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The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
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Submitted 14 October, 2005;
originally announced October 2005.
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In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells
Authors:
Yu. Krupko,
L. Smrcka,
P. Vasek,
P. Svoboda,
M. Cukr,
L. Jansen
Abstract:
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling thr…
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We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage.
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Submitted 22 September, 2003; v1 submitted 12 June, 2003;
originally announced June 2003.
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Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field
Authors:
P. Svoboda,
Y. Krupko,
L. Smrcka,
M. Cukr,
T. Jungwirth,
L. Jansen
Abstract:
We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced t…
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We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve.
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Submitted 21 June, 2001;
originally announced June 2001.
