Showing 1–25 of 25 results for author: Kronast, F

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Authors: Alexandre Pofelski, Sergio Valencia, Yoav Kalcheim, Pavel Salev, Alberto Rivera, Chubin Huang, Mohamad A. Mawass, Florian Kronast, Ivan K. Schuller, Yimei Zhu, Javier del Valle

Abstract: Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clam** can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-ori… ▽ More Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clam** can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Size-dependence and high temperature stability of radial vortex magnetic textures imprinted by superconductor stray fields

Authors: D. Sanchez-Manzano, G. Orfila, A. Sander, L. Marcano, F. Gallego, M. A. Mawass, F. Grilli, A. Arora, A. Peralta, F. A. Cuellar, J. A. Fernandez-Roldan, N. Reyren, F. Kronast, C. Leon, A. Rivera-Calzada, J. E. Villegas, J. Santamaria, S. Valencia

Abstract: Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystall… ▽ More Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystallographic symmetries, bulk, or interface interactions, and/or a precise stacking sequence of materials. Here, we make use of the stray field of YBa2Cu3O7-δ superconducting microstructures in ferromagnet/superconductor hybrids to imprint magnetic radial vortices in permalloy at temperatures below the superconducting transition temperature (TC), a method easily extended to other ferromagnets with in-plane magnetic anisotropy. We examine the size dependence and temperature stability of the imprinted magnetic configurations. We show that above TC, magnetic domains retain memory of the imprinted spin texture. Micromagnetic modelling coupled with a SC field model reveals that the stabilization mechanism leading to this memory effect is mediated by microstructural defects. Superconducting control of swirling spin textures below and above the superconducting transition temperature holds promising prospects for sha** spintronics based on magnetic textures. △ Less

Submitted 17 October, 2023; originally announced October 2023.

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

Authors: Maria-Andromachi Syskaki, Takaaki Dohi, Sergei Olegovich Filnov, Sergey Alexeyevich Kasatikov, Beatrice Bednarz, Alevtina Smekhova, Florian Kronast, Mona Bhukta, Rohit Pachat, Johannes Wilhelmus van der Jagt, Shimpei Ono, Dafiné Ravelosona Ramasitera, Jürgen Langer, Mathias Kläui, Liza Herrera Diez, Gerhard Jakob

Abstract: The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying… ▽ More The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Probing magnetic ordering in air stable iron-rich van der Waals minerals

Authors: Muhammad Zubair Khan, Oleg E. Peil, Apoorva Sharma, Oleksandr Selyshchev, Sergio Valencia, Florian Kronast, Maik Zimmermann, Muhammad Awais Aslam, Johann G. Raith, Christian Teichert, Dietrich R. T. Zahn, Georgeta Salvan, Aleksandar Matković, Chair of Physics, Department Physics, Mechanics, Electrical engineering, Montanuniversität Leoben, 8700, Leoben, Austria., Materials Center Leoben Forschung GmbH, 8700, Leoben, Austria. , et al. (24 additional authors not shown)

Abstract: In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layere… ▽ More In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent cap** by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Comments: 19 pages, 6 figures

Role of substrate clam** on anisotropy and domain structure in the canted antiferromagnet $α$-Fe$_2$O$_3$

Authors: Angela Wittmann, Olena Gomonay, Kai Litzius, Allison Kaczmarek, Alexander E. Kossak, Daniel Wolf, Axel Lubk, Tyler N. Johnson, Elizaveta A. Tremsina, Alexandra Churikova, Felix Büttner, Sebastian Wintz, Mohamad-Assaad Mawass, Markus Weigand, Florian Kronast, Larry Scipioni, Adam Shepard, Ty Newhouse-Illig, James A Greer, Gisela Schütz, Norman O. Birge, Geoffrey S. D. Beach

Abstract: Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving… ▽ More Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $α$-Fe$_2$O$_3$, but fluctuate due to substrate clam**. This leads to an overall isotropic distribution of the Néel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $α$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: 9 pages, 5 figures

Laser-induced Creation of antiferromagnetic 180-degree domains in NiO/Pt bilayers

Authors: Hendrik Meer, Stephan Wust, Christin Schmitt, Paul Herrgen, Felix Fuhrmann, Steffen Hirtle, Beatrice Bednarz, Adithya Rajan, Rafael Ramos, Miguel Angel Niño, Michael Foerster, Florian Kronast, Armin Kleibert, Baerbel Rethfeld, Eiji Saitoh, Benjamin Stadtmüller, Martin Aeschlimann, Mathias Kläui

Abstract: We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by imaging the created domain structure utilizing the X-ray magnetic linear dichroism effect. We study the effect of different laser polarizations on the domain fo… ▽ More We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by imaging the created domain structure utilizing the X-ray magnetic linear dichroism effect. We study the effect of different laser polarizations on the domain formation and identify a polarization-independent creation of 180° domain walls and domains with 180° different Néel vector orientation. By varying the irradiation parameters, we determine the switching mechanism to be thermally induced and demonstrate the reversibility. We thus demonstrate experimentally the possibility to optically create antiferromagnetic domains, an important step towards future functionalization of all optical switching mechanisms in antiferromagnets. △ Less

Submitted 23 March, 2023; v1 submitted 20 October, 2022; originally announced October 2022.

Journal ref: Adv. Funct. Mater. 2023, 2213536

Spin Dynamics, Loop Formation and Cooperative Reversal in Artificial Quasicrystals with Tailored Exchange Coupling

Authors: Vinayak Shantaram Bhat, Sho Watanabe, Florian Kronast, Korbinian Baumgaertl, Dirk Grundler

Abstract: Aperiodicity and un-conventional rotational symmetries allow quasicrystalline structures to exhibit unprecedented physical and functional properties. In magnetism, artificial ferromagnetic quasicrystals exhibited knee anomalies suggesting reprogrammable magnetic properties via nonstochastic switching. However, the decisive roles of short-range exchange and long-range dipolar interactions have not… ▽ More Aperiodicity and un-conventional rotational symmetries allow quasicrystalline structures to exhibit unprecedented physical and functional properties. In magnetism, artificial ferromagnetic quasicrystals exhibited knee anomalies suggesting reprogrammable magnetic properties via nonstochastic switching. However, the decisive roles of short-range exchange and long-range dipolar interactions have not yet been clarified for optimized reconfigurable functionality. We report broadband spin-wave spectroscopy and X-ray photoemission electron microscopy on different quasicrystal lattices consisting of ferromagnetic Ni81Fe19 nanobars arranged on aperiodic Penrose and Ammann tilings with different exchange and dipolar interactions. We imaged the magnetic states of partially reversed quasicrystals and analyzed their configurations in terms of the charge model, geometrical frustration and the formation of flux-closure loops. Only the exchange-coupled lattices are found to show aperiodicity-specific collective phenomena and non-stochastic switching. Both, exchange and dipolarly coupled quasicrystals show magnonic excitations with narrow linewidths in minor loop measurements. Thereby reconfigurable functionalities in spintronics and magnonics become realistic. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Comments: 12 pages, 6 figures

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

Authors: Hendrik Meer, Olena Gomonay, Christin Schmitt, Rafael Ramos, Leo Schnitzspan, Florian Kronast, Mohamad-Assaad Mawass, Sergio Valencia, Eiji Saitoh, Jairo Sinova, Lorenzo Baldrati, Mathias Kläui

Abstract: We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by… ▽ More We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets. △ Less

Submitted 1 September, 2022; v1 submitted 5 May, 2022; originally announced May 2022.

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination

Authors: Roméo Juge, Naveen Sisodia, Joseba Urrestarazu Larrañaga, Qiang Zhang, Van Tuong Pham, Kumari Gaurav Rana, Brice Sarpi, Nicolas Mille, Stefan Stanescu, Rachid Belkhou, Mohamad-Assaad Mawass, Nina Novakovic-Marinkovic, Florian Kronast, Markus Weigand, Joachim Gräfe, Sebastian Wintz, Simone Finizio, Jörg Raabe, Lucia Aballe, Michael Foerster, Mohamed Belmeguenai, Liliana Buda-Prejbeanu, Justin M. Shaw, Hans T. Nembach, Laurent Ranno , et al. (2 additional authors not shown)

Abstract: Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in… ▽ More Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Journal ref: Nature Communications, 13, 4807 (2022)

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

Authors: Rahil Hosseinifar, Evangelos Golias, Ivar Kumberg, Quentin Guillet, Karl Frischmuth, Sangeeta Thakur, Mario Fix, Manfred Albrecht, Florian Kronast, Wolfgang Kuch

Abstract: We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sa… ▽ More We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at sharp tipped features. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already-existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching. △ Less

Submitted 2 January, 2022; v1 submitted 6 July, 2021; originally announced July 2021.

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Authors: Christin Schmitt, Lorenzo Baldrati, Luis Sanchez-Tejerina, Felix Schreiber, Andrew Ross, Mariia Filianina, Shilei Ding, Felix Fuhrmann, Rafael Ramos, Francesco Maccherozzi, Dirk Backes, Mohamad A. Mawass, Florian Kronast, Sergio Valencia, Eiji Saitoh, Giovanni Finocchio, Mathias Kläui

Abstract: Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes.… ▽ More Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices. △ Less

Submitted 28 February, 2021; v1 submitted 19 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Applied 15, 034047 (2021)

A local view of the laser induced magnetic domain dynamics in CoPd stripe domains at the picosecond time scale

Authors: V. López-Flores, M. -A. Mawass, J. Herrero-Albillos, A. A. Uenal, S. Valencia, F. Kronast, C. Boeglin

Abstract: The dynamic of the magnetic structure in a well ordered ferromagnetic CoPd stripe domain pattern has been investigated upon excitation by femtosecond infrared laser pulses. Time-resolved X-ray magnetic circular dichroism in photoemission electron microscopy (TR-XMCD-PEEM) is used to perform real space magnetic imaging with 100 ps time resolution in order to show local transformations of the domain… ▽ More The dynamic of the magnetic structure in a well ordered ferromagnetic CoPd stripe domain pattern has been investigated upon excitation by femtosecond infrared laser pulses. Time-resolved X-ray magnetic circular dichroism in photoemission electron microscopy (TR-XMCD-PEEM) is used to perform real space magnetic imaging with 100 ps time resolution in order to show local transformations of the domains structures. Using the time resolution of the synchrotron radiation facility of the Helmholtz-Zentrum Berlin, we are able to image the transient magnetic domains in a repetitive pump and probe experiment. In this work, we study the reversible and irreversible transformations of the excited magnetic stripe domains as function of the laser fluence. Our results can be explained by thermal contributions, reducing the XMCD amplitude in each stripe domain below a threshold fluence of 12 mJ/cm2. Above this threshold fluence, irreversible transformations of the magnetic domains are observed. Static XMCD-PEEM images reveal the new partially ordered stripe domain structures characterized by a new local magnetic domain distribution showing an organized pattern at the micrometer scale. This new arrangement is attributed to the recovery of the magnetic anisotropy during heat dissipation under an Oersted field. △ Less

Submitted 30 June, 2020; v1 submitted 18 March, 2020; originally announced March 2020.

Comments: 20 pages including 8 figures and 1 Table

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Authors: Andrew Ross, Romain Lebrun, Camilo Ulloa, Daniel A. Grave, Asaf Kay, Lorenzo Baldrati, Florian Kronast, Sergio Valencia, Avner Rothschild, Mathias Kläui

Abstract: Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse… ▽ More Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures. △ Less

Submitted 15 July, 2020; v1 submitted 9 January, 2020; originally announced January 2020.

Propagation length of antiferromagnetic magnons governed by domain configurations

Authors: Andrew Ross, Romain Lebrun, Olena Gomonay, Daniel A. Grave, Asaf Kay, Lorenzo Baldrati, Sven Becker, Alireza Qaiumzadeh, Camilo Ulloa, Gerhard Jakob, Florian Kronast, Jairo Sinova, Rembert Duine, Arne Brataas, Avner Rothschild, Mathias Kläui

Abstract: The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin film… ▽ More The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration. △ Less

Submitted 1 February, 2021; v1 submitted 5 July, 2019; originally announced July 2019.

Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir

Authors: James M. Taylor, Edouard Lesne, Anastasios Markou, Fasil Kidane Dejene, Pranava Keerthi Sivakumar, Simon Pöllath, Kumari Gaurav Rana, Neeraj Kumar, Chen Luo, Hanjo Ryll, Florin Radu, Florian Kronast, Peter Werner, Christian H. Back, Claudia Felser, Stuart S. P. Parkin

Abstract: Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt… ▽ More Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $γ$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $μ_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Journal ref: Appl. Phys. Lett. 115, 062403 (2019)

Switching on superferromagnetism

Authors: A. Arora, L. C. Phillips, P. Nukala, M. Ben Hassine, A. A. Ünal, B. Dkhil, Ll. Balcells, O. Iglesias, A. Barthélémy, F. Kronast, M. Bibes, S. Valencia

Abstract: Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenu… ▽ More Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior. △ Less

Submitted 12 February, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: 9 pages, 6 figures, Supp. Info. available at: http://www.ffn.ub.es/oscar/Articles.html

Journal ref: Physical Review Materials 3, 024403 (2019)

Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe

Authors: Romain Lebrun, Andrew Ross, Olena Gomonay, Scott Bender, Lorenzo Baldrati, Florian Kronast, Alireza Qaiumzadeh, Jairo Sinova, Arne Brataas, Rembert Duine, Mathias Kläui

Abstract: We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet… ▽ More We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic Néel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity. △ Less

Submitted 4 January, 2019; originally announced January 2019.

Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

Authors: Lorenzo Baldrati, Olena Gomonay, Andrew Ross, Mariia Filianina, Romain Lebrun, Rafael Ramos, Cyril Leveille, Felix Fuhrmann, Thomas Forrest, Francesco Maccherozzi, Sergio Valencia, Florian Kronast, Eiji Saitoh, Jairo Sinova, Mathias Kläui

Abstract: We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching… ▽ More We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs. △ Less

Submitted 15 August, 2019; v1 submitted 26 October, 2018; originally announced October 2018.

Comments: 26 pages, including supplementary material

Journal ref: Phys. Rev. Lett. 123, 177201 (2019)

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: An insight into flexomagnetic phenomenon

Authors: ** Hong Lee, Kwang-Eun Kim, Byung-Kweon Jang, Ahmet A. Ünal, Sergio Valencia, Florian Kronast, Kyung-Tae Ko, Stefan Kowarik, Jan Seidel, Chan-Ho Yang

Abstract: Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discover… ▽ More Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing polarization-dependent photoemission electron microscopy in conjunction with cluster model calculations. Model Hamiltonian calculation for the single-ion anisotropy including the spin-orbit interaction has been performed to figure out the physical origin of the link between the strain gradient present in the mixed phase area and its antiferromagnetic spin axis. Our findings enable estimation of the strain-gradient-induced magnetic anisotropy energy per Fe ion at around 5$\times$10$^{-12}$ eV m, and provide a new pathway towards an electric-field-induced 90$^{\circ}$ rotation of antiferromagnetic spin axis at room temperature by flexomagnetism. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Comments: 32 pages, 5 figures

Journal ref: Phys. Rev. B 96, 064402 (2017)

Influence of magnetic field and ferromagnetic film thickness on domain pattern transfer in multiferroic heterostructures

Authors: Diego López González, Arianna Casiraghi, Florian Kronast, Kévin J. A. Franke, Sebastiaan van Dijken

Abstract: Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and straight ferroelectric domain boundaries in BaTiO$_3$ pin magnetic domain walls in CoFeB. We use x-ray photoemission electron microscopy and magneto-optical Kerr effe… ▽ More Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and straight ferroelectric domain boundaries in BaTiO$_3$ pin magnetic domain walls in CoFeB. We use x-ray photoemission electron microscopy and magneto-optical Kerr effect microscopy to characterize the spin structure of the pinned domain walls. In a rotating magnetic field, abrupt and reversible transitions between two domain wall types occur, namely, narrow walls where the magnetization vectors align head-to-tail and much broader walls with alternating head-to-head and tail-to-tail magnetization configurations. We characterize variations of the domain wall spin structure as a function of magnetic field strength and CoFeB film thickness and compare the experimental results with micromagnetic simulations. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Comments: 5 pages, 5 figures

Direct observation of the band gap transition in atomically thin ReS$_2$

Authors: Mathias Gehlmann, Irene Aguilera, Gustav Bihlmayer, Slavomír Nemšák, Philipp Nagler, Pika Gospodarič, Giovanni Zamborlini, Markus Eschbach, Vitaliy Feyer, Florian Kronast, Ewa Młyńczak, Tobias Korn, Lukasz Plucinski, Christian Schüller, Stefan Blügel, Claus M. Schneider

Abstract: ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic… ▽ More ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature

Authors: L. C. Phillips, Ryan O. Cherifi, Viktoria Ivanovskaya, Alberto Zobelli, Ingrid C. Infante, Eric Jacquet, Nicolas Guiblin, Ahmet A. Unal, Florian Kronast, Brahim Dkhil, Agnes Barthelemy, Manuel Bibes, Sergio Valencia

Abstract: Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic… ▽ More Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics. △ Less

Submitted 11 December, 2014; originally announced December 2014.

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Authors: Hui Fang, Corsin Battaglia, Carlo Carraro, Slavomir Nemsak, Burak Ozdol, Jeong Seuk Kang, Hans A. Bechtel, Sujay B. Desai, Florian Kronast, Ahmet A. Unal, Giuseppina Conti, Catherine Conlon, Gunnar K. Palsson, Michael C. Martin, Andrew M. Minor, Charles S. Fadley, Eli Yablonovitch, Roya Maboudian, Ali Javey

Abstract: Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,… ▽ More Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers. △ Less

Submitted 14 April, 2014; v1 submitted 15 March, 2014; originally announced March 2014.

Comments: http://www.pnas.org/content/early/2014/04/10/1405435111.abstract

Spin-orbit strength driven crossover between intrinsic and extrinsic mechanisms of the anomalous Hall effect in epitaxial L1o FePd and FePt

Authors: K. M. Seemann, Y. Mokrousov, A. Aziz, J. Miguel, F. Kronast, W. Kuch, M. G. Blamire, A. T. Hindmarch, B. J. Hickey, I. Souza, C. H. Marrows

Abstract: We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1o FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of FePd is mainly due to extrinsic side-jump, while in the epitaxial FePt films of the same thickness and degree of order the intrinsic contribution is dominating o… ▽ More We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1o FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of FePd is mainly due to extrinsic side-jump, while in the epitaxial FePt films of the same thickness and degree of order the intrinsic contribution is dominating over the extrinsic mechanisms of the AHE. We relate this crossover to the difference in spin-orbit strength of Pt and Pd atoms and suggest that this phenomenon can be used for tuning the origins of the AHE in complex alloys. △ Less

Submitted 28 January, 2010; v1 submitted 8 November, 2008; originally announced November 2008.

Comments: 4 pages, regular article, 4 figures accepted for publication in Physical Review Letters

Electronic structure and spectroscopy of the quaternary Heusler alloy Co$_2$Cr$_{1-x}$Fe$_{x}$Al

Authors: Sabine Wurmehl, Gerhard H. Fecher, Kristian Kroth, Florian Kronast, Hermann A. Dürr, Yukiharu Takeda, Yuji Saitoh, Keisuke Kobayashi, Hong-Ji Lin, Gerd Schönhense, Claudia Felser

Abstract: Quaternary Heusler alloys Co$_2$Cr$_{1-x}$Fe$_{x}$Al with varying Cr to Fe ratio $x$ were investigated experimentally and theoretically. The electronic structure and spectroscopic properties were calculated using the full relativistic Korringa-Kohn-Rostocker method with coherent potential approximation to account for the random distribution of Cr and Fe atoms as well as random disorder. Magnetic… ▽ More Quaternary Heusler alloys Co$_2$Cr$_{1-x}$Fe$_{x}$Al with varying Cr to Fe ratio $x$ were investigated experimentally and theoretically. The electronic structure and spectroscopic properties were calculated using the full relativistic Korringa-Kohn-Rostocker method with coherent potential approximation to account for the random distribution of Cr and Fe atoms as well as random disorder. Magnetic effects are included by the use of spin dependent potentials in the local spin density approximation. Magnetic circular dichroism in X-ray absorption was measured at the $L_{2,3}$ edges of Co, Fe, and Cr of the pure compounds and the $x=0.4$ alloy in order to determine element specific magnetic moments. Calculations and measurements show an increase of the magnetic moments with increasing iron content. Resonant (560eV - 800eV) soft X-ray as well as high resolution - high energy ($\geq 3.5$keV) hard X-ray photo emission was used to probe the density of the occupied states in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al. △ Less

Submitted 30 January, 2006; originally announced January 2006.

Comments: J.Phys.D_Appl.Phys. accepted

Journal ref: J. Phys. D.: Appl. Phys. 39 (2006) 803