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Quantum magnetic oscillations in the absence of closed electron trajectories
Authors:
Z. E. Krix,
O. A. Tkachenko,
V. A. Tkachenko,
D. Q. Wang,
O. Klochan,
A. R. Hamilton,
O. P. Sushkov
Abstract:
Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused…
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Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime.
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Submitted 6 April, 2024;
originally announced April 2024.
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Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas
Authors:
Daisy Q. Wang,
Zeb Krix,
Oleg P. Sushkov,
Ian Farrer,
David A. Ritchie,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen…
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In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties.
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Submitted 11 March, 2024;
originally announced March 2024.
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Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells
Authors:
Daisy Q. Wang,
Zeb Krix,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Chong Chen,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w…
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The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hop** that drive collective phenomena in real crystals. Solid state approaches support long range hop** and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.
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Submitted 20 February, 2024;
originally announced February 2024.
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Patterned bilayer graphene as a tunable, strongly correlated system
Authors:
Z. E. Krix,
O. P. Sushkov
Abstract:
Recent observations of superconductivity in Moire graphene have lead to an intense interest in that system, with subsequent studies revealing a more complex phase diagram including correlated insulators and ferromagnetic phases. Here we propose an alternate system, electrostatically patterned bilayer graphene (PBG), in which a supermodulation is induced via metallic gates rather than the moire eff…
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Recent observations of superconductivity in Moire graphene have lead to an intense interest in that system, with subsequent studies revealing a more complex phase diagram including correlated insulators and ferromagnetic phases. Here we propose an alternate system, electrostatically patterned bilayer graphene (PBG), in which a supermodulation is induced via metallic gates rather than the moire effect. We show that, by varying either the gap or the modulation strength, bilayer graphene can be tuned into the strongly correlated regime. Further calculations show that this is not possible in monolayer graphene. We present a general technique for addressing Coulomb screening of the periodic potential and demonstrate that this system is experimentally feasible.
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Submitted 11 October, 2022;
originally announced October 2022.
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Correlated physics in an artificial triangular anti-dot lattice
Authors:
Z. E. Krix,
H. D. Scammell,
O. P. Sushkov
Abstract:
This work considers a two-dimensional artificial triangular anti-dot lattice (TAL); a semiconductor based artificial crystal hosting Dirac cones, flat bands and Fermi surface nesting. All such single particle features have dramatic implications for the emergent correlated phases. This work predominantly focuses on the existence of a robust flatband and enumerates the possible correlated phases tha…
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This work considers a two-dimensional artificial triangular anti-dot lattice (TAL); a semiconductor based artificial crystal hosting Dirac cones, flat bands and Fermi surface nesting. All such single particle features have dramatic implications for the emergent correlated phases. This work predominantly focuses on the existence of a robust flatband and enumerates the possible correlated phases that follow. We find that the flatband is generated, in the single-particle theory, when charges align themselves along a kagome lattice with the same period as the TAL. The correlated phases are studied using complementary techniques of expansions in strong and weak Coulomb interaction. Our microscopic modelling shows that for the purpose of generating strongly correlated phases, hole doped TALs have significant advantages over electron doped.
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Submitted 27 September, 2021;
originally announced September 2021.
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Artificial Graphene in a Strong Magnetic Field: Bulk Current Distribution and Quantum Phase Transitions
Authors:
Zeb E. Krix,
Oleg P. Sushkov
Abstract:
We present calculations of the equilibrium current density and Chern numbers for a 2DEG in a periodic potential with infinite strip geometry and a perpendicular magnetic field. We consider a triangular lattice of anti-dots with large (a = 120 nm) lattice spacing. Such a system is known as artificial graphene (AG). To compute the current density we numerically diagonalise the AG Hamiltonian over a…
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We present calculations of the equilibrium current density and Chern numbers for a 2DEG in a periodic potential with infinite strip geometry and a perpendicular magnetic field. We consider a triangular lattice of anti-dots with large (a = 120 nm) lattice spacing. Such a system is known as artificial graphene (AG). To compute the current density we numerically diagonalise the AG Hamiltonian over a set of Landau level basis states, this takes into account coupling between different Landau levels. Our calculations show that, at magnetic fields typical for quantum Hall measurements, extended streams of current are present in the bulk of the sample. We investigate the scaling of these streams with potential strength. Knowledge of the AG energy levels allows us to compute the Chern number associated with each energy gap. We demonstrate that in tuning the height of the potential modulation the Chern number can undergo a transition between two different values.
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Submitted 23 February, 2020; v1 submitted 18 February, 2020;
originally announced February 2020.
