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Robust valley polarization of helium ion modified atomically thin MoS$_{2}$
Authors:
Julian Klein,
Agnieszka Kuc,
Anna Nolinder,
Marcus Altzschner,
Jakob Wierzbowski,
Florian Sigger,
Franz Kreupl,
Jonathan J. Finley,
Ursula Wurstbauer,
Alexander W. Holleitner,
Michael Kaniber
Abstract:
Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminesc…
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Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS$_{2}$. By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminescence arising 180 meV below the neutral exciton emission. We perform ab-initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions.
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Submitted 19 February, 2018; v1 submitted 3 May, 2017;
originally announced May 2017.
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Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions
Authors:
Max Stelzer,
Franz Kreupl
Abstract:
Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has t…
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Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against high current stress. The C-Si contact is over 100 million times more stable against high current stress pulses than the conventionally used TiSi junction. The C-Si contact properties even show promise to establish an ultra-low, high temperature stable contact resistance. The finding has important consequences for the enhancement of reliability in power devices as well as in Schottky-diodes and electrical contacts to silicon in general.
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Submitted 9 December, 2016;
originally announced December 2016.
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Performance Improvement of Graphenic Carbon X-ray Transmission Windows
Authors:
Sebastian Huebner,
Natsuki Miyakawa,
Andreas Pahlke,
Franz Kreupl
Abstract:
Graphenic carbon (GC) x-ray transmission windows for EDX and XRF applications with a high transparency for x-rays below 2.5 keV have been fabricated on 6 inch wafers with a CMOS-compatible CVD process. GC windows with an open diameter of 7.4 mm and a thickness of 770 nm withstand up to 6.5 bars of differential pressure. A high transmissivity of 40 % for fluorine Kα (0.677 keV) radiation is demonst…
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Graphenic carbon (GC) x-ray transmission windows for EDX and XRF applications with a high transparency for x-rays below 2.5 keV have been fabricated on 6 inch wafers with a CMOS-compatible CVD process. GC windows with an open diameter of 7.4 mm and a thickness of 770 nm withstand up to 6.5 bars of differential pressure. A high transmissivity of 40 % for fluorine Kα (0.677 keV) radiation is demonstrated for a GC thickness of 650 nm. The GC membranes outperform beryllium (Be) windows, in terms of higher x-ray transmission and better mechanical stability while avoiding the toxicity of Be. Optical profilometry has been employed to visualize a large deformation of the GC layer during the window fabrication. This seems to limit the thickness of the GC windows that can currently be fabricated. A two-step growth process can overcome these limitations and windows with a thickness of up to 6 μm have been realized.
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Submitted 15 March, 2016;
originally announced March 2016.
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Design and properties of low energy x-ray transmission windows based on graphenic carbon
Authors:
Sebastian Huebner,
Natsuki Miyakawa,
Andreas Pahlke,
Franz Kreupl
Abstract:
X-ray transmission windows for the low energy range, especially between 0.1 keV and 1 keV have been designed and fabricated based on graphenic carbon (GC) with an integrated silicon frame. A hexagonal and a bar grid support structure design have been evaluated. The bar grid design allows to substitute polymer-based windows with the advantages of higher transmission, better rejection of visible lig…
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X-ray transmission windows for the low energy range, especially between 0.1 keV and 1 keV have been designed and fabricated based on graphenic carbon (GC) with an integrated silicon frame. A hexagonal and a bar grid support structure design have been evaluated. The bar grid design allows to substitute polymer-based windows with the advantages of higher transmission, better rejection of visible light and vacuum operability of the encapsulated silicon drift detectors (SDD). In addition, the high mechanical resilience of graphenic carbon is demonstrated by pressure cycle tests, yielding over 10 million cycles without damage. The data are complemented by bulge tests to determine a Young`s modulus for graphenic carbon of approximately 130 GPa. Additional finite-element simulation and Raman studies reveal that the mechanical stress is not homogeneously distributed, but reaches a maximum near the anchoring points of the free standing graphenic carbon membrane.
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Submitted 5 November, 2015;
originally announced November 2015.
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High Performance X-Ray Transmission Windows Based on Graphenic Carbon
Authors:
Sebastian Huebner,
Natsuki Miyakawa,
Stefan Kapser,
Andreas Pahlke,
Franz Kreupl
Abstract:
A novel x-ray transmission window based on graphenic carbon has been developed with superior performance compared to beryllium transmission windows that are currently used in the field. Graphenic carbon in combination with an integrated silicon frame allows for a window design which does not use a mechanical support grid or additional light blocking layers. Compared to beryllium, the novel x-ray t…
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A novel x-ray transmission window based on graphenic carbon has been developed with superior performance compared to beryllium transmission windows that are currently used in the field. Graphenic carbon in combination with an integrated silicon frame allows for a window design which does not use a mechanical support grid or additional light blocking layers. Compared to beryllium, the novel x-ray transmission window exhibits an improved transmission in the low energy region ($0.1 hbox{keV}-3 hbox{keV}$ ) while demonstrating excellent mechanical stability, as well as light and vacuum tightness. Therefore, the newly established graphenic carbon window, can replace beryllium in x-ray transmission windows with a nontoxic and abundant material. Index terms: Beryllium, Carbon, Graphene, Thin films, X-ray applications, X-ray detectors
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Submitted 10 March, 2015;
originally announced March 2015.
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Carbon Memory Assessment
Authors:
Franz Kreupl
Abstract:
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate physical scaling limits within the next 10 years or so, the global electronics research community has begun an intense search for a new paradigm and technology…
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The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate physical scaling limits within the next 10 years or so, the global electronics research community has begun an intense search for a new paradigm and technology for extending the functional scaling of memory technologies. Several promising nonvolatile memory concepts have emerged, based on different switching and retention mechanisms from those of Flash memory, e.g., STTRAM, RRAM, PCM and more recently, resistive memories based on carbon, which are the topic of this paper. This paper will introduce into the diverse field of carbon materials by recollecting some effects in carbon that can be used to produce a multiple time switchable, non-volatile unipolar resistive memory with potential high scalability down to atomic dimensions. Carbon-based memory is a non-volatile resistive memory, therefore, the same architectures, circuits, select transistor or diodes like in ReRAM or PCRAM can be considered as implementation. The big advantage of carbon memory might be the high temperature retention of 250 C, which makes it attractive for automotive and harsh conditions. This is a white paper for the ITRS meeting on emerging research devices (ERD) in Albuquerque, New Mexico, on August 25-26, 2014.
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Submitted 20 August, 2014;
originally announced August 2014.
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Advancing CMOS with Carbon Electronics
Authors:
Franz Kreupl
Abstract:
A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now…
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A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now. Possible reasons for the shortcomings as well as possible solutions to overcome the performance gap will be addressed. In contrast to GNR, short channel CNT field effect transistors (FET) demonstrate in the experimental realization almost ideal transistor characteristics down to very low bias voltages. Therefore, CNT-FETs are clear frontrunners in the search of a future CMOS switch, that will enable further voltage and gate length scaling. Essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked. Finally, the gap to industrial wafer-level scale SWCNT integration will be addressed and strategies for achieving highly aligned carbon nanotube fabrics will be discussed. Without such a high yield wafer-scale integration, SWCNT circuits will be an illusionary dream.
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Submitted 25 March, 2014;
originally announced March 2014.
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Carbon-based Materials as Key-enabler for More Than Moore
Authors:
Franz Kreupl
Abstract:
Carbon-based materials like nanotubes and graphene are heavily investigated as future CMOS-like devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional CMOS transistors, the paper here will focus on some less known applications of carbon. Proposed and demonstrated are interconnect applications like highly conductive…
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Carbon-based materials like nanotubes and graphene are heavily investigated as future CMOS-like devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional CMOS transistors, the paper here will focus on some less known applications of carbon. Proposed and demonstrated are interconnect applications like highly conductive electrodes for capacitors, gate material or through-silicon vias (TSV), novel non-volatile memories, carbon-silicon Schottky diodes or superior sensors.
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Submitted 21 December, 2010;
originally announced December 2010.
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Carbon Based Resistive Memory
Authors:
Franz Kreupl,
Rainer Bruchhaus,
Petra Majewski,
Jan B. Philipp,
Ralf Symanczyk,
Thomas Happ,
Christian Arndt,
Mirko Vogt,
Roy Zimmermann,
Axel Buerke,
Andrew P. Graham,
Michael Kund
Abstract:
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully d…
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We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
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Submitted 28 January, 2009;
originally announced January 2009.
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Silicon Nanowires, Catalytic Growth and Electrical Characterization
Authors:
Walter M. Weber,
Georg S. Duesberg,
Andrew P. Graham,
Maik Liebau,
Eugen Unger,
Caroline Cheze,
Lutz Geelhaar,
Paolo Lugli,
Henning Riechert,
Franz Kreupl
Abstract:
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field…
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Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si.
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Submitted 13 September, 2006;
originally announced September 2006.
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Carbon Nanotubes for Interconnect Applications
Authors:
Franz Kreupl,
Andrew P. Graham,
Maik Liebau,
Georg S. Duesberg,
Robert Seidel,
Eugen Unger
Abstract:
We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8…
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We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect.
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Submitted 20 December, 2004;
originally announced December 2004.
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Sub 20 nm Short Channel Carbon Nanotube Transistors
Authors:
R. V. Seidel,
A. P. Graham,
J. Kretz,
B. Rajasekharan,
G. S. Duesberg,
M. Liebau,
E. Unger,
F. Kreupl,
W. Hoenlein
Abstract:
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and P…
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Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt.
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Submitted 7 November, 2004;
originally announced November 2004.
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Microelectronic interconnects based on carbon nanotubes
Authors:
Franz Kreupl,
Andrew P. Graham,
Maik Liebau,
Georg S. Duesberg,
Robert Seidel,
Eugen Unger
Abstract:
Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration.
Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration.
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Submitted 25 October, 2004;
originally announced October 2004.
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Carbon Nanotubes in Microelectronic Applications
Authors:
F. Kreupl,
G. S. Duesberg,
A. P. Graham,
M. Liebau,
E. Unger,
R. Seidel,
W. Pamler,
W. Hoenlein
Abstract:
Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelec…
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Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelectronic compatible way. The growth of single individual nanotubes at lithographically defined locations on whole wafers as a key requirement for the successful implementation of nanotubes is shown. In terms of nanotube transistors we propose a vertical nanotube transistor concept which outperforms the ITRS requirements for the year 2016. The performance is mainly limited by contact resistances, but by comparison with silicon devices we show that fabricated nanotube transistors already today exceed the values for transconductance, on-resistance and drive current of silicon devices.
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Submitted 14 October, 2004;
originally announced October 2004.
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Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes
Authors:
R. V. Seidel,
A. P. Graham,
B. Rajasekharan,
E. Unger,
M. Liebau,
G. S. Duesberg,
F. Kreupl,
W. Hoenlein
Abstract:
The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almo…
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The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs.
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Submitted 13 October, 2004;
originally announced October 2004.
