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Optical properties of MoSe$_2$ monolayer implanted with ultra-low energy Cr ions
Authors:
Minh N. Bui,
Stefan Rost,
Manuel Auge,
Lanqing Zhou,
Christoph Friedrich,
Stefan Blügel,
Silvan Kretschmer,
Arkady V. Krasheninnikov,
Kenji Watanabe,
Takashi Taniguchi,
Hans C. Hofsäss,
Detlev Grützmacher,
Beata E. Kardynał
Abstract:
The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron do**. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and wea…
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The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron do**. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by do**.
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Submitted 25 April, 2023; v1 submitted 21 April, 2023;
originally announced April 2023.
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Electron Holographic Map** of Structural and Electronic Reconstruction at Mono- and Bilayer Steps of h-BN
Authors:
Subakti Subakti,
Mohammadreza Daqiqshirazi,
Daniel Wolf,
Martin Linck,
Felix L. Kern,
Mitisha Jain,
Silvan Kretschmer,
Arkady V. Krasheninnikov,
Thomas Brumme,
Axel Lubk
Abstract:
Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag e…
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Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag edges and steps comprising two monolayers and the absence of which at monolayer steps. The technique paves the way for studying other charge (de)localization phenomena in 2D materials, e.g., at polar edges, topological edge states and defects.
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Submitted 8 October, 2022;
originally announced October 2022.
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Velocity distributions of particles sputtered from supported 2D-MoS$_2$ during highly charged ion irradiation
Authors:
Lucia Skopinski,
Silvan Kretschmer,
Philipp Ernst,
Matthias Herder,
Lukas Madauß,
Lars Breuer,
Arkady V. Krasheninnikov,
Marika Schleberger
Abstract:
The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energi…
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The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energies. However, the relevance of various interaction mechanisms is unknown. Here we show that for slow HCI (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and transferred kinetic energy are independent from each other, which is consistent with our atomistic simulations. We have irradiated substrate supported (Au, SiO$_2$) monolayers of MoS$_2$ with highly charged xenon ions (charge state: 17$+$ - 40$+$), extracted the emitted neutral, post-ionized Mo particles into a time-of-flight mass spectrometer and determined their velocity distributions. We find two main contributions, one at high velocities and a second one at lower velocities, and assign them to kinetic and potential effects respectively. Our data suggests that the dominant mechanism for potential sputtering is related to electron-phonon coupling, while non-thermal processes play no significant role. We anticipate that our work will be a starting point for further experiments and simulations to determine whether the different processes resulting from E$_{pot}$ and E$_{kin}$ can be separated or whether synergistic effects play a role.
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Submitted 9 August, 2022;
originally announced August 2022.
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Extrinsic localized excitons in patterned 2D semiconductors
Authors:
D Yagodkin,
K Greben,
A Eljarrat,
S Kovalchuk,
M Ghorbani-Asl,
M Jain,
S Kretschmer,
N Severin,
J P Rabe,
A V Krasheninnikov,
C T Koch,
K I Bolotin
Abstract:
We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,…
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We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies.
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Submitted 29 March, 2022; v1 submitted 28 May, 2021;
originally announced May 2021.
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Perforating freestanding molybdenum disulfide monolayers with highly charged ions
Authors:
Roland Kozubek,
Mukesh Tripathi,
Mahdi Ghorbani-Asl,
Silvan Kretschmer,
Lukas Madauß,
Erik Pollmann,
Maria O'Brien,
Niall McEvoy,
Ursula Ludacka,
Toma Susi,
Georg S. Duesberg,
Richard A. Wilhelm,
Arkady V. Krasheninnikov,
Jani Kotakoski,
Marika Schleberger
Abstract:
Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to…
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Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.
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Submitted 2 July, 2019;
originally announced July 2019.
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Protein Pattern Formation
Authors:
Erwin Frey,
Jacob Halatek,
Simon Kretschmer,
Petra Schwille
Abstract:
Protein pattern formation is essential for the spatial organization of many intracellular processes like cell division, flagellum positioning, and chemotaxis. A prominent example of intracellular patterns are the oscillatory pole-to-pole oscillations of Min proteins in \textit{E. coli} whose biological function is to ensure precise cell division. Cell polarization, a prerequisite for processes suc…
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Protein pattern formation is essential for the spatial organization of many intracellular processes like cell division, flagellum positioning, and chemotaxis. A prominent example of intracellular patterns are the oscillatory pole-to-pole oscillations of Min proteins in \textit{E. coli} whose biological function is to ensure precise cell division. Cell polarization, a prerequisite for processes such as stem cell differentiation and cell polarity in yeast, is also mediated by a diffusion-reaction process. More generally, these functional modules of cells serve as model systems for self-organization, one of the core principles of life. Under which conditions spatio-temporal patterns emerge, and how these patterns are regulated by biochemical and geometrical factors are major aspects of current research. Here we review recent theoretical and experimental advances in the field of intracellular pattern formation, focusing on general design principles and fundamental physical mechanisms.
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Submitted 20 February, 2018; v1 submitted 4 January, 2018;
originally announced January 2018.
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Nearest-neighbor Kitaev exchange blocked by charge order in electron doped $α$-RuCl$_{3}$
Authors:
A. Koitzsch,
C. Habenicht,
E. Mueller,
M. Knupfer,
B. Buechner,
S. Kretschmer,
M. Richter,
J. van den Brink,
F. Boerrnert,
D. Nowak,
A. Isaeva,
Th. Doert
Abstract:
A quantum spin-liquid might be realized in $α$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $α$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon do**. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spe…
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A quantum spin-liquid might be realized in $α$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $α$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon do**. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry at K$_{0.5}$RuCl$_3$. This gives rise to a peculiar charge disproportionation into formally Ru$^{2+}$ (4$d^6$) and Ru$^{3+}$ (4$d^5$). Every Ru 4$d^5$ site with one hole in the $t_{2g}$ shell is surrounded by nearest neighbors of 4$d^6$ character, where the $t_{2g}$ level is full and magnetically inert. Thus, each type of Ru sites forms a triangular lattice and nearest-neighbor interactions of the original honeycomb are blocked.
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Submitted 13 October, 2017; v1 submitted 15 September, 2017;
originally announced September 2017.
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Collision model for non-Markovian quantum dynamics
Authors:
Silvan Kretschmer,
Kimmo Luoma,
Walter T. Strunz
Abstract:
We study the applicability of collisional models for non-Markovian dynamics of open quantum systems. By allowing interactions between the separate environmental degrees of freedom in between collisions we are able to construct a collision model that allows to study quantum memory effects in open system dynamics. We also discuss the possibility to embed non-Markovian collision model dynamics into M…
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We study the applicability of collisional models for non-Markovian dynamics of open quantum systems. By allowing interactions between the separate environmental degrees of freedom in between collisions we are able to construct a collision model that allows to study quantum memory effects in open system dynamics. We also discuss the possibility to embed non-Markovian collision model dynamics into Markovian collision model dynamics in an extended state space. As a concrete example we show how using the proposed class of collision models we can discretely model non- Markovian amplitude dam** of a qubit. In the time-continuous limit, we obtain the well-known results for spontaneous decay of a two level system in to a structured zero-temperature reservoir
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Submitted 1 March, 2016;
originally announced March 2016.
