Flop**-mode electric dipole spin resonance in phosphorus donor qubits in silicon
Authors:
F. N. Krauth,
S. K. Gorman,
Y. He,
M. T. Jones,
P. Macha,
S. Kocsis,
C. Chua,
B. Voisin,
S. Rogge,
R. Rahman,
Y. Chung,
M. Y. Simmons
Abstract:
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combi…
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Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
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Submitted 6 May, 2021;
originally announced May 2021.
Optimal electrode geometries for 2-dimensional ion arrays with bi-layer ion traps
Authors:
F. N. Krauth,
J. Alonso,
J. P. Home
Abstract:
We investigate electrode geometries required to produce periodic 2-dimensional ion-trap arrays with the ions placed between two planes of electrodes. We present a generalization of previous methods for traps containing a single electrode plane to this new geometry, and show that for a given ion-electrode distance and applied voltages, the inter-ion distance can be reduced by a factor of up to 3 re…
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We investigate electrode geometries required to produce periodic 2-dimensional ion-trap arrays with the ions placed between two planes of electrodes. We present a generalization of previous methods for traps containing a single electrode plane to this new geometry, and show that for a given ion-electrode distance and applied voltages, the inter-ion distance can be reduced by a factor of up to 3 relative to single-plane traps. This represents an increase by a factor of 9 in the trap density and a factor of 27 in the exchange coupling between the oscillatory motion of neighboring ions. The resulting traps are also considerably deeper for bi-layer structures than for single-plane traps. These results could offer a useful path towards 2-dimensional ion arrays for quantum simulation. We also discuss issues with the fabrication of such traps.
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Submitted 4 November, 2014; v1 submitted 18 June, 2014;
originally announced June 2014.
