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Effect of biquadratic magnetic exchange interaction in the 2D antiferromagnets MPS_3 (M = Mn, Fe, Co, Ni)
Authors:
Mohammad Amirabbasi,
Peter Kratzer
Abstract:
The two-dimensional van der Waals (vdW) materials MPS_3(M = Mn, Fe, Co, Ni) display antiferromagnetic ordering of the magnetic moments at the transition metal ions. The possibility to exfoliate thin layers that preserve the magnetic order makes these materials interesting for numerous applications in devices that require integration of flexible patches of magnetic materials, e.g. in antiferromagne…
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The two-dimensional van der Waals (vdW) materials MPS_3(M = Mn, Fe, Co, Ni) display antiferromagnetic ordering of the magnetic moments at the transition metal ions. The possibility to exfoliate thin layers that preserve the magnetic order makes these materials interesting for numerous applications in devices that require integration of flexible patches of magnetic materials, e.g. in antiferromagnetic spintronics. Hence, an improved understanding of their magnetic properties is desirable. Here, we parameterize spin Hamiltonians for a monolayer of all four materials of this class using density functional theory plus Hubbard U calculations. We provide a step-by-step guide for calculating the magnetic exchange interactions and magnetic anisotropy energy using the (non-)collinear DFT+U(+ SOC) approach with a suitably chosen U for each material. It is found that the biquadratic interactions gain in importance while moving through the 3d series. Retaining the leading terms of a Holstein-Primakoff-transformed spin Hamiltonian, the magnon spectra are calculated. While MnPS_3 is found to be an almost isotropic antiferromagnet with a tiny gap, the biquadratic interaction opens an increasingly wider gap for FePS_3, CoPS_3 and NiPS_3. In line with this observation, Monte Carlo simulations demonstrate that the biquadratic interactions contribute to a systematic rise in the Neel temperature from FePS_3 to NiPS_3.
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Submitted 22 April, 2024;
originally announced April 2024.
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Femtosecond spin-state switching dynamics of spin-crossover molecules condensed in thin films
Authors:
Lea Kämmerer,
Gérald Kämmerer,
Manuel Gruber,
Jan Grunwald,
Tobias Lojewski,
Laurent Mercadier,
Loïc Le Guyader,
Robert Carley,
Cammille Carinan,
Natalia Gerasimova,
David Hickin,
Benjamin E. Van Kuiken,
Giuseppe Mercurio,
Martin Teichmann,
Senthil Kumar Kuppusamy,
Andreas Scherz,
Mario Ruben,
Klaus Sokolowski-Tinten,
Andrea Eschenlohr,
Katharina Ollefs,
Carolin Schmitz-Antoniak,
Felix Tuczek,
Peter Kratzer,
Uwe Bovensiepen,
Heiko Wende
Abstract:
The photoinduced switching of Fe(II)-based spin-crossover complexes from singlet to quintet takes place at ultrafast time scales. This a priori spin-forbidden transition triggered numerous time-resolved experiments of solvated samples to elucidate the mechanism at play. The involved intermediate states remain uncertain. We apply ultrafast x-ray spectroscopy in molecular films as a method sensitive…
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The photoinduced switching of Fe(II)-based spin-crossover complexes from singlet to quintet takes place at ultrafast time scales. This a priori spin-forbidden transition triggered numerous time-resolved experiments of solvated samples to elucidate the mechanism at play. The involved intermediate states remain uncertain. We apply ultrafast x-ray spectroscopy in molecular films as a method sensitive to spin, electronic, and nuclear degrees of freedom. Combining the progress in molecule synthesis and film growth with the opportunities at x-ray free-electron lasers, we analyze the transient evolution of the Fe L3 fine structure at room temperature. Our measurements and calculations indicate the involvement of an Fe triplet intermediate state. The high-spin state saturates at half of the available molecules, limited by molecule-molecule interaction within the film.
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Submitted 3 December, 2023;
originally announced December 2023.
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Isolating the Nonlinear Optical Response of a MoS$_2$ Monolayer under Extreme Screening of a Metal Substrate
Authors:
Tao Yang,
Stephan Sleziona,
Erik Pollmann,
Eckart Hasselbrink,
Peter Kratzer,
Marika Schleberger,
R. Kramer Campen,
Yu** Tong
Abstract:
Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affects their optical properties, posing challenges in characterizing the monolayer's optical responses within the semiconductor-metal junction. In this st…
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Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affects their optical properties, posing challenges in characterizing the monolayer's optical responses within the semiconductor-metal junction. In this study, using precise polarization-controlled final-state sum frequency generation (FS-SFG), we successfully isolated the optical responses of a MoS$_2$ monolayer from a MoS$_2$/Au junction. The resulting SFG spectra exhibit a linear lineshape, devoid of A or B exciton features, attributed to the strong dielectric screening and substrate induced do**. The linear lineshape illustrates the expected constant density of states (DOS) at the band edge of the 2D semiconductor, a feature often obscured by excitonic interactions in week-screening conditions such as in a free-standing monolayer. Extrapolation yields the onset of a direct quasiparticle bandgap of about $1.65\pm0.20$ eV, indicating a strong bandgap renormalization. This study not only enriches our understanding of the optical responses of a 2D semiconductor in extreme screening conditions but also provides a critical reference for advancing 2D semiconductor-based photocatalytic applications.
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Submitted 30 October, 2023;
originally announced October 2023.
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Kibble-Zurek dynamics in the anisotropic Ising model of the Si(001) surface
Authors:
Gernot Schaller,
Friedemann Queisser,
Seyedeh Parya Katoorani,
Christian Brand,
Christian Kohlfürst,
Mark R. Freeman,
Alfred Hucht,
Peter Kratzer,
Björn Sothmann,
Michael Horn-von Hoegen,
Ralf Schützhold
Abstract:
As a simplified description of the non-equilibrium dynamics of buckled dimers on the Si(001) surface, we consider the anisotropic 2D Ising model and study the freezing of spatial correlations during a cooling quench across the critical point. We observe a crossover from 1D to 2D behavior. For rapid cooling, we find effectively 1D behavior in the strongly coupled direction, for which we provide an…
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As a simplified description of the non-equilibrium dynamics of buckled dimers on the Si(001) surface, we consider the anisotropic 2D Ising model and study the freezing of spatial correlations during a cooling quench across the critical point. We observe a crossover from 1D to 2D behavior. For rapid cooling, we find effectively 1D behavior in the strongly coupled direction, for which we provide an exact analytic solution of the non-equilibrium dynamics. For slower cooling rates, we start to see 2D behavior where our numerical simulations show an approach to the usual Kibble-Zurek scaling in 2D.
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Submitted 21 June, 2024; v1 submitted 27 October, 2023;
originally announced October 2023.
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Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class
Authors:
Christian Brand,
Alfred Hucht,
Hamid Mehdipour,
Giriraj Jnawali,
Jonas D. Fortmann,
Mohammad Tajik,
Rüdiger Hild,
Björn Sothmann,
Peter Kratzer,
Ralf Schützhold,
Michael Horn-von Hoegen
Abstract:
The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling c…
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The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.
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Submitted 6 March, 2024; v1 submitted 16 October, 2023;
originally announced October 2023.
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First-principles Calculations of MoSeTe/WSeTe Bilayers: Stability, Phonons, Electronic Band Offsets, and Rashba Splitting
Authors:
Hamid Mehdipour,
Peter Kratzer
Abstract:
Janus materials have attracted much interest due to their intrinsic electric dipole moment and Rashba band splitting. We show that, by building bilayers of MoSeTe and WSeTe with different chalcogen atom sequences and different stacking patterns, one can modulate the net dipole moment strength and the Rashba effect, as well as the band alignment of the MoSeTe/WSeTe bilayer. Type-II band alignment i…
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Janus materials have attracted much interest due to their intrinsic electric dipole moment and Rashba band splitting. We show that, by building bilayers of MoSeTe and WSeTe with different chalcogen atom sequences and different stacking patterns, one can modulate the net dipole moment strength and the Rashba effect, as well as the band alignment of the MoSeTe/WSeTe bilayer. Type-II band alignment is found which can be exploited to create long-lived interlayer excitons. Moreover, it is shown that the atomic sequence and stacking play pivotal roles in the interlayer distance of MoSeTe/WSeTe and thus its electronic structure and vibrational, especially low-frequency, characteristics. The long-range dispersion forces between atoms are treated with a conventional additive pairwise, as well as a many-body-dispersion method. It is shown that under the many-body dispersion method, more clear and rational thermodynamic trends of bilayer stacking are realized and interface distances are estimated more accurately. Vibrational spectra of the bilayers are calculated using first-principles phonon calculations and the fingerprints of monolayer attraction and repulsion are identified. An anti-correlation between distance and the shearing mode frequency of the rigid monolayers is demonstrated which agrees well with experimental findings. The results suggest that the judicious selection of the atomic sequence and stacking helps to widen the scope of the low-dimensional materials by adding or enhancing properties for specific applications, e.g. for spintronics or valleytronics devices.
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Submitted 13 February, 2024; v1 submitted 21 July, 2023;
originally announced July 2023.
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Interaction between pentacene molecules and monolayer transition metal dichalcogenides
Authors:
E. Black,
P. Kratzer,
J. M. Morbec
Abstract:
Using first-principles calculations based on density-functional theory, we investigated the adsorption of pentacene molecules on monolayer two-dimensional transition metal dichalcogenides (TMD). We considered the four most popular TMDs, namely, MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$, and we examined the structural and electronic properties of pentacene/TMD systems. We discuss how monolayer pentacen…
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Using first-principles calculations based on density-functional theory, we investigated the adsorption of pentacene molecules on monolayer two-dimensional transition metal dichalcogenides (TMD). We considered the four most popular TMDs, namely, MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$, and we examined the structural and electronic properties of pentacene/TMD systems. We discuss how monolayer pentacene interacts with the TMDs, and how this interaction affects the charge transfer and work function of the heterostructure. We also analyse the type of band alignment formed in the heterostructure and how it is affected by molecule-molecule and molecule-substrate interactions. Such analysis is valuable since pentacene/TMD heterostructures are considered to be promising for application in flexible, thin and lightweight photovoltaics and photodetectors.
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Submitted 17 April, 2023;
originally announced April 2023.
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Quasi-particle propagation across semiconductor-Mott insulator interfaces
Authors:
Jan Verlage,
Friedemann Queisser,
Nikodem Szpak,
Jürgen König,
Peter Kratzer,
Ralf Schützhold
Abstract:
As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and match the propagating or evanescent quasi-particle solutions on both sides. While the propagation is described by a band-like dispersion in both the weakly and th…
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As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and match the propagating or evanescent quasi-particle solutions on both sides. While the propagation is described by a band-like dispersion in both the weakly and the strongly interacting case, the inverse decay length across the interface follows a different dependence on the band gap in the Mott insulator and the semiconductor. As one consequence, tunnelling through a Mott insulating layer behaves quite different from a semiconducting (or band insulating) layer. For example, we find a strong suppression of tunnelling for energies in the middle between the upper and lower Hubbard band of the Mott insulator.
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Submitted 8 May, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Dimer Coupling Energies of the Si(001) Surface
Authors:
Christian Brand,
Alfred Hucht,
Giriraj Jnawali,
Jonas D. Fortmann,
Björn Sothmann,
Hamid Mehdipour,
Peter Kratzer,
Ralf Schützhold,
Michael Horn-von Hoegen
Abstract:
The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justifie…
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The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry.
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Submitted 3 February, 2023;
originally announced February 2023.
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Planning Coordinated Human-Robot Motions with Neural Network Full-Body Prediction Models
Authors:
Philipp Kratzer,
Marc Toussaint,
Jim Mainprice
Abstract:
Numerical optimization has become a popular approach to plan smooth motion trajectories for robots. However, when sharing space with humans, balancing properly safety, comfort and efficiency still remains challenging. This is notably the case because humans adapt their behavior to that of the robot, raising the need for intricate planning and prediction. In this paper, we propose a novel optimizat…
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Numerical optimization has become a popular approach to plan smooth motion trajectories for robots. However, when sharing space with humans, balancing properly safety, comfort and efficiency still remains challenging. This is notably the case because humans adapt their behavior to that of the robot, raising the need for intricate planning and prediction. In this paper, we propose a novel optimization-based motion planning algorithm, which generates robot motions, while simultaneously maximizing the human trajectory likelihood under a data-driven predictive model. Considering planning and prediction together allows us to formulate objective and constraint functions in the joint human-robot state space. Key to the approach are added latent space modifiers to a differentiable human predictive model based on a dedicated recurrent neural network. These modifiers allow to change the human prediction within motion optimization. We empirically evaluate our method using the publicly available MoGaze dataset. Our results indicate that the proposed framework outperforms current baselines for planning handover trajectories and avoiding collisions between a robot and a human. Our experiments demonstrate collaborative motion trajectories, where both, the human prediction and the robot plan, adapt to each other.
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Submitted 24 October, 2022;
originally announced October 2022.
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Orbital and magnetic ordering in single-layer FePS3: A DFT+U study
Authors:
Mohammad Amirabbasi,
Peter Kratzer
Abstract:
Among the numerous 2D system that can be prepared via exfoliation, iron phosphorus trisulfide (FePS3) attracts a lot of attention recently due to its broad-range photoresponse, its unusual Ising-type magnetic order and possible applications in spintronic nano-devices. Despite various experimental and theoretical-computational reports, there are still uncertainties in identifying its magnetic groun…
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Among the numerous 2D system that can be prepared via exfoliation, iron phosphorus trisulfide (FePS3) attracts a lot of attention recently due to its broad-range photoresponse, its unusual Ising-type magnetic order and possible applications in spintronic nano-devices. Despite various experimental and theoretical-computational reports, there are still uncertainties in identifying its magnetic ground state. In this paper, we investigate the structural and magnetic properties of single-layer FePS3 by using Density Functional Theory. Our findings show that orbital ordering leads to a variation in distance between pairs of iron atoms by 0.14 Angstrom. These lattice distortions, albeit small, trigger different (ferromagnetic and antiferromagnetic) exchange couplings so that the ground state consists of ferromagnetically aligned zigzag chains along the long Fe-Fe bonds which couple antiferromagnetically along the shorter Fe-Fe bonds. Within the DFT+U framework, we parameterize a spin Hamiltonian including Heisenberg, single-ion anisotropy, Dzyaloshinskii-Moriya and biquadratic interactions. Using U=2.22eV gives a consistent description of both the electronic band gap and the Neel temperature in 2D FePS3.
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Submitted 19 December, 2022; v1 submitted 22 July, 2022;
originally announced July 2022.
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Relaxation of photo-excited hot carriers beyond multi-temperature models: General theory description verified by experiments on Pb/Si(111)
Authors:
Peter Kratzer,
Laurenz Rettig,
Irina Yu. Sklyadneva,
Evgueni V. Chulkov,
Uwe Bovensiepen
Abstract:
The equilibration of electronic carriers in metals after excitation by an ultra-short laser pulse provides an important class of non-equilibrium phenomena in metals and allows measuring the effective electron-phonon coupling parameter. Since the observed decay of the electronic distribution is governed by the interplay of both electron-electron and electron-phonon scattering, the interpretation of…
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The equilibration of electronic carriers in metals after excitation by an ultra-short laser pulse provides an important class of non-equilibrium phenomena in metals and allows measuring the effective electron-phonon coupling parameter. Since the observed decay of the electronic distribution is governed by the interplay of both electron-electron and electron-phonon scattering, the interpretation of experimental data must rely on models that ideally should be easy to handle, yet accurate. In this work, an extended rate-equation model is proposed that explicitly includes non-thermal electronic carriers while at the same time incorporating data from first-principles calculations of the electron-phonon coupling via Eliashberg-Migdal theory. The model is verified against experimental data for thin Pb films grown on Si(111). Improved agreement between theory and experiment at short times (<0.3ps) due to non-thermal electron contributions is found. Moreover, the rate equations allow for widely different coupling strength to different phonon subsystems. Consequently, an indirect, electron-mediated energy transfer between strongly and weakly coupled groups of phonons can be observed in the simulations that leads to a retarded equilibration of the subsystems only after several picoseconds.
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Submitted 5 October, 2022; v1 submitted 10 May, 2022;
originally announced May 2022.
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Quantum Zeno Manipulation of Quantum Dots
Authors:
N. Ahmadiniaz,
M. Geller,
J. König,
P. Kratzer,
A. Lorke,
G. Schaller,
R. Schützhold
Abstract:
We investigate whether and how the quantum Zeno effect, i.e., the inhibition of quantum evolution by frequent measurements, can be employed to isolate a quantum dot from its surrounding electron reservoir. In contrast to the often studied case of tunneling between discrete levels, we consider the tunnelling of an electron from a continuum reservoir to a discrete level in the dot. Realizing the qua…
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We investigate whether and how the quantum Zeno effect, i.e., the inhibition of quantum evolution by frequent measurements, can be employed to isolate a quantum dot from its surrounding electron reservoir. In contrast to the often studied case of tunneling between discrete levels, we consider the tunnelling of an electron from a continuum reservoir to a discrete level in the dot. Realizing the quantum Zeno effect in this scenario can be much harder because the measurements should be repeated before the wave packet of the hole left behind in the reservoir moves away from the vicinity of the dot. Thus, the required repetition rate could be lowered by having a flat band (with a slow group velocity) in resonance with the dot or a sufficiently small Fermi velocity or a strong external magnetic field. We also consider the anti-Zeno effect, i.e., how measurements can accelerate or enable quantum evolution.
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Submitted 27 August, 2022; v1 submitted 27 January, 2022;
originally announced January 2022.
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Hierarchical Human-Motion Prediction and Logic-Geometric Programming for Minimal Interference Human-Robot Tasks
Authors:
An T. Le,
Philipp Kratzer,
Simon Hagenmayer,
Marc Toussaint,
Jim Mainprice
Abstract:
In this paper, we tackle the problem of human-robot coordination in sequences of manipulation tasks. Our approach integrates hierarchical human motion prediction with Task and Motion Planning (TAMP). We first devise a hierarchical motion prediction approach by combining Inverse Reinforcement Learning and short-term motion prediction using a Recurrent Neural Network. In a second step, we propose a…
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In this paper, we tackle the problem of human-robot coordination in sequences of manipulation tasks. Our approach integrates hierarchical human motion prediction with Task and Motion Planning (TAMP). We first devise a hierarchical motion prediction approach by combining Inverse Reinforcement Learning and short-term motion prediction using a Recurrent Neural Network. In a second step, we propose a dynamic version of the TAMP algorithm Logic-Geometric Programming (LGP). Our version of Dynamic LGP, replans periodically to handle the mismatch between the human motion prediction and the actual human behavior. We assess the efficacy of the approach by training the prediction algorithms and testing the framework on the publicly available MoGaze dataset.
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Submitted 5 July, 2021; v1 submitted 16 April, 2021;
originally announced April 2021.
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MoGaze: A Dataset of Full-Body Motions that Includes Workspace Geometry and Eye-Gaze
Authors:
Philipp Kratzer,
Simon Bihlmaier,
Niteesh Balachandra Midlagajni,
Rohit Prakash,
Marc Toussaint,
Jim Mainprice
Abstract:
As robots become more present in open human environments, it will become crucial for robotic systems to understand and predict human motion. Such capabilities depend heavily on the quality and availability of motion capture data. However, existing datasets of full-body motion rarely include 1) long sequences of manipulation tasks, 2) the 3D model of the workspace geometry, and 3) eye-gaze, which a…
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As robots become more present in open human environments, it will become crucial for robotic systems to understand and predict human motion. Such capabilities depend heavily on the quality and availability of motion capture data. However, existing datasets of full-body motion rarely include 1) long sequences of manipulation tasks, 2) the 3D model of the workspace geometry, and 3) eye-gaze, which are all important when a robot needs to predict the movements of humans in close proximity. Hence, in this paper, we present a novel dataset of full-body motion for everyday manipulation tasks, which includes the above. The motion data was captured using a traditional motion capture system based on reflective markers. We additionally captured eye-gaze using a wearable pupil-tracking device. As we show in experiments, the dataset can be used for the design and evaluation of full-body motion prediction algorithms. Furthermore, our experiments show eye-gaze as a powerful predictor of human intent. The dataset includes 180 min of motion capture data with 1627 pick and place actions being performed. It is available at https://humans-to-robots-motion.github.io/mogaze and is planned to be extended to collaborative tasks with two humans in the near future.
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Submitted 23 November, 2020;
originally announced November 2020.
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Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3
Authors:
Soumyajit Sarkar,
Peter Kratzer
Abstract:
Using density functional theory combined with a Hubbard model (DFT+U ), the electronic band structure of CrI3 multilayers, both free-standing and enclosed between graphene contacts, is calculated. We show that the DFT+U approach, together with the 'around mean field' correction scheme, is able to describe the vertical magnetotransport in line with the experimental measurements of magnetoresistance…
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Using density functional theory combined with a Hubbard model (DFT+U ), the electronic band structure of CrI3 multilayers, both free-standing and enclosed between graphene contacts, is calculated. We show that the DFT+U approach, together with the 'around mean field' correction scheme, is able to describe the vertical magnetotransport in line with the experimental measurements of magnetoresistance in multi-layered CrI3 enclosed between graphene contacts. Moreover, by interpolating between different double-counting correction schemes, namely the 'around mean field' correction and the fully localized limit, we show their importance for describing both the band structure and the ground-state total energy consistently. Our description of the magnetic exchange interaction is compatible with the experimentally observed antiferromagnetic ground state in the bilayer CrI3 and the transition to a ferromagnetic arrangement in a small external magnetic field. Thus, using spin-polarized DFT+U with an 'around mean field' correction, a consistent overall picture is achieved.
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Submitted 11 September, 2020;
originally announced September 2020.
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Real-Time Time-Dependent Density Functional Theory within FHI-aims
Authors:
Joscha Hekele,
Peter Kratzer
Abstract:
Real-Time Time-Dependent Density Functional Theory (TDDFT) has become an attractive tool to model quantum dynamics on a first-principles Density Functional Theory level. In recent years, several developments and applications in this field were achieved and hopefully lead to new insights. We present here our versatile and efficient Real-Time TDDFT implementation into the all-electron numerical basi…
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Real-Time Time-Dependent Density Functional Theory (TDDFT) has become an attractive tool to model quantum dynamics on a first-principles Density Functional Theory level. In recent years, several developments and applications in this field were achieved and hopefully lead to new insights. We present here our versatile and efficient Real-Time TDDFT implementation into the all-electron numerical basis-set DFT code package FHI-aims. This article is meant as a short overview on how we performed this task and what can be done with our implementation. We further shed light on the connection of the basis set size to the accuracy of absorption spectrum simulation results.
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Submitted 20 August, 2020;
originally announced August 2020.
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Anticipating Human Intention for Full-Body Motion Prediction in Object Gras** and Placing Tasks
Authors:
Philipp Kratzer,
Niteesh Balachandra Midlagajni,
Marc Toussaint,
Jim Mainprice
Abstract:
Motion prediction in unstructured environments is a difficult problem and is essential for safe and efficient human-robot space sharing and collaboration. In this work, we focus on manipulation movements in environments such as homes, workplaces or restaurants, where the overall task and environment can be leveraged to produce accurate motion prediction. For these cases we propose an algorithmic f…
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Motion prediction in unstructured environments is a difficult problem and is essential for safe and efficient human-robot space sharing and collaboration. In this work, we focus on manipulation movements in environments such as homes, workplaces or restaurants, where the overall task and environment can be leveraged to produce accurate motion prediction. For these cases we propose an algorithmic framework that accounts explicitly for the environment geometry based on a model of affordances and a model of short-term human dynamics both trained on motion capture data. We propose dedicated function networks for graspability and placebility affordances and we make use of a dedicated RNN for short-term motion prediction. The prediction of grasp and placement probability densities are used by a constraint-based trajectory optimizer to produce a full-body motion prediction over the entire horizon. We show by comparing to ground truth data that we achieve similar performance for full-body motion predictions as using oracle grasp and place locations.
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Submitted 20 July, 2020;
originally announced July 2020.
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Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer
Authors:
Erik Pollmann,
Juliana M. Morbec,
Lukas Madauß,
Lara Bröckers,
Peter Kratzer,
Marika Schleberger
Abstract:
Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimental…
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Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimentally and by density-functional-theory calculations, that molybdenum disulphide flakes grow in two orientations. One of the orientations is energetically preferred, the other one is rotated by 30 degree. Because of a high energy barrier confirmed by our calculations both orientations are stable at room temperature and their switching can only be forced by external stimuli, i.e. by a scanning tunneling microscope tip. Combined Kelvin probe microscopy and Raman spectroscopy measurements show that the flakes with a typical size of a few hundred nanometers are less doped than the often studied exfoliated molybdenum disulphide single layer.
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Submitted 15 October, 2019;
originally announced October 2019.
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Prediction of Human Full-Body Movements with Motion Optimization and Recurrent Neural Networks
Authors:
Philipp Kratzer,
Marc Toussaint,
Jim Mainprice
Abstract:
Human movement prediction is difficult as humans naturally exhibit complex behaviors that can change drastically from one environment to the next. In order to alleviate this issue, we propose a prediction framework that decouples short-term prediction, linked to internal body dynamics, and long-term prediction, linked to the environment and task constraints. In this work we investigate encoding sh…
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Human movement prediction is difficult as humans naturally exhibit complex behaviors that can change drastically from one environment to the next. In order to alleviate this issue, we propose a prediction framework that decouples short-term prediction, linked to internal body dynamics, and long-term prediction, linked to the environment and task constraints. In this work we investigate encoding short-term dynamics in a recurrent neural network, while we account for environmental constraints, such as obstacle avoidance, using gradient-based trajectory optimization. Experiments on real motion data demonstrate that our framework improves the prediction with respect to state-of-the-art motion prediction methods, as it accounts to beforehand unseen environmental structures. Moreover we demonstrate on an example, how this framework can be used to plan robot trajectories that are optimized to coordinate with a human partner.
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Submitted 18 March, 2020; v1 submitted 4 October, 2019;
originally announced October 2019.
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Boltzmann relaxation dynamics of strongly interacting spinless fermions on a lattice
Authors:
Friedemann Queisser,
Sebastian Schreiber,
Peter Kratzer,
Ralf Schützhold
Abstract:
Motivated by the recent interest in non-equilibrium phenomena in quantum many-body systems, we study strongly interacting fermions on a lattice by deriving and numerically solving quantum Boltzmann equations that describe their relaxation to thermodynamic equilibrium.The derivation is carried out by inspecting the hierarchy of correlations within the framework of the 1/Z-expansion. Applying the Ma…
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Motivated by the recent interest in non-equilibrium phenomena in quantum many-body systems, we study strongly interacting fermions on a lattice by deriving and numerically solving quantum Boltzmann equations that describe their relaxation to thermodynamic equilibrium.The derivation is carried out by inspecting the hierarchy of correlations within the framework of the 1/Z-expansion. Applying the Markov approximation, we obtain the dynamic equations for the distribution functions. Interestingly, we find that in the strong-coupling limit, collisions between particles and holes dominate over particle-particle and hole-hole collisions -- in stark contrast to weakly interacting systems. As a consequence, our numerical simulations show that the relaxation time scales strongly depend on the type of excitations (particles or holes or both) that are initially present.
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Submitted 5 December, 2019; v1 submitted 25 September, 2019;
originally announced September 2019.
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Relaxation of electrons in quantum-confined states in Pb/Si(111) thin films from master equation with first-principles-derived rates
Authors:
Peter Kratzer,
Maedeh Zahedifar
Abstract:
Atomically thin films of Pb on Si(111) provide an experimentally tunable system comprising a highly structured electronic density of states. The lifetime of excited electrons in these states is limited by both electron-electron (e-e) and electron-phonon (e-ph) scattering. We employ the description by a master equation for the electronic occupation numbers to analyze the relative importance of both…
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Atomically thin films of Pb on Si(111) provide an experimentally tunable system comprising a highly structured electronic density of states. The lifetime of excited electrons in these states is limited by both electron-electron (e-e) and electron-phonon (e-ph) scattering. We employ the description by a master equation for the electronic occupation numbers to analyze the relative importance of both scattering mechanisms. The electronic and phononic band structures, as well as the matrix elements for electron-phonon coupling within deformation potential theory were obtained from density functional calculations, thus taking into account quantum confinement effects. For the relaxation dynamics, the contribution of impact ionization processes to the lifetime is estimated from the imaginary part of the electronic self-energy calculated in the GW approximation. By numerically solving rate equations for the occupations of the Pb-derived electronic states coupled to a phononic heat bath, we are able to follow the distribution of the electronic excitation energy to the various modes of Pb lattice vibrations. While e-e scattering is the dominant relaxation mechanism, we demonstrate that the e-ph scattering is highly phonon-mode-specific, with a large contribution from surface phonons. At electron energies of about 0.3 eV above the Fermi surface, a 'phonon bottleneck' characteristic of relaxation in nanostructures with well-separated electronic states is observed. The time scales extracted from the simulations are compared to data from pump-probe experiments using time-resolved two-photon photoemission.
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Submitted 17 January, 2020; v1 submitted 16 August, 2019;
originally announced August 2019.
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Motion Prediction with Recurrent Neural Network Dynamical Models and Trajectory Optimization
Authors:
Philipp Kratzer,
Marc Toussaint,
Jim Mainprice
Abstract:
Predicting human motion in unstructured and dynamic environments is difficult as humans naturally exhibit complex behaviors that can change drastically from one environment to the next. In order to alleviate this issue, we propose to encode the lower level aspects of human motion separately from the higher level geometrical aspects, which we believe will generalize better over environments. In con…
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Predicting human motion in unstructured and dynamic environments is difficult as humans naturally exhibit complex behaviors that can change drastically from one environment to the next. In order to alleviate this issue, we propose to encode the lower level aspects of human motion separately from the higher level geometrical aspects, which we believe will generalize better over environments. In contrast to our prior work~\cite{kratzer2018}, we encode the short-term behavior by using a state-of-the-art recurrent neural network structure instead of a Gaussian process. In order to perform longer-term behavior predictions that account for variation in tasks and environments, we propose to make use of gradient-based trajectory optimization. Preliminary experiments on real motion data demonstrate the efficacy of the approach.
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Submitted 28 June, 2019;
originally announced June 2019.
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Phonon-induced electronic relaxation in a strongly correlated system: the Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ adlayer revisited
Authors:
Maedeh Zahedifar,
Peter Kratzer
Abstract:
The ordered adsorbate layer Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that electron-hole pair excitations in this system can be long-lived, up to several hundred nanoseconds, since the decay into surface phonons is found to be a highly non-linear…
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The ordered adsorbate layer Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that electron-hole pair excitations in this system can be long-lived, up to several hundred nanoseconds, since the decay into surface phonons is found to be a highly non-linear process. We combine first-principles calculations with help of a hybrid functional (HSE06) with modeling by a Mott-Hubbard Hamiltonian coupled to phononic degrees of freedom. The calculations show that the Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ surface is insulating and the two Sn-derived bands inside the substrate band gap can be described as the lower and upper Hubbard band in a Mott-Hubbard model with $U=0.75$eV. Furthermore, phonon spectra are calculated with particular emphasis on the Sn-related surface phonon modes. The calculations demonstrate that the adequate treatment of electronic correlations leads to a stiffening of the wagging mode of neighboring Sn atoms; thus, we predict that the onset of electronic correlations at low temperature should be observable in the phonon spectrum, too. The deformation potential for electron-phonon coupling is calculated for selected vibrational modes and the decay rate of an electron-hole excitation into multiple phonons is estimated, substantiating the very long lifetime of these excitations.
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Submitted 6 September, 2019; v1 submitted 11 April, 2019;
originally announced April 2019.
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Adsorption and dissociation of iron phthalocyanine on H/Si(111): Impact of van-der-Waals interactions and perspectives for subsurface do**
Authors:
Benjamin Geisler,
Peter Kratzer
Abstract:
The adsorption of iron phthalocyanine (FePc) on the passivated H/Si(111) surface is explored from first principles. We find that the organic molecule is predominantly physisorbed with a distance to the surface of $2.6 \pm 0.1$ Angstrom, but also exhibits sizable resonance with the underlying substrate. This establishes the present system as interesting mixed covalent-van-der-Waals-bound test case,…
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The adsorption of iron phthalocyanine (FePc) on the passivated H/Si(111) surface is explored from first principles. We find that the organic molecule is predominantly physisorbed with a distance to the surface of $2.6 \pm 0.1$ Angstrom, but also exhibits sizable resonance with the underlying substrate. This establishes the present system as interesting mixed covalent-van-der-Waals-bound test case, which we use to compare the impact of different approaches to van-der-Waals interactions. (Spin-polarized) scanning tunneling microscopy (SP STM) images are simulated, selectively accessing different molecular orbitals via the applied bias voltage in the spirit of scanning tunneling spectroscopy. Comparison with experimental STM images reveals very good agreement. We find a significant magnetic contrast exceeding $\pm 1$ Angstrom in the SP STM images for $-2$ and $+1.5$ V. Binding energies of different (transition metal) atoms in the center of the Pc ring are presented, which particularly show that Fe is strongly bound in the molecule (about $9.6$ eV). Finally, we discuss different reactions for subsurface do** by room-temperature FePc deposition and point out two feasible reactions.
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Submitted 3 May, 2019; v1 submitted 4 December, 2018;
originally announced December 2018.
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Ab initio simulation of the structure and transport properties of zirconium and ferromagnetic cobalt contacts on the two-dimensional semiconductor WS_2
Authors:
Hamideh Kahnouji,
Peter Kratzer,
S. Javad Hashemifar
Abstract:
Using density-functional theory calculations, the atomic and electronic structure of single-layer WS_2 attached to Zr and Co contacts are determined. Both metals form stable interfaces that are promising as contacts for injection of n-type carriers into the conduction band of WS_2 with Schottky barriers of 0.45eV and 0.62eV for Zr and Co, respectively. With the help of quantum transport calculatio…
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Using density-functional theory calculations, the atomic and electronic structure of single-layer WS_2 attached to Zr and Co contacts are determined. Both metals form stable interfaces that are promising as contacts for injection of n-type carriers into the conduction band of WS_2 with Schottky barriers of 0.45eV and 0.62eV for Zr and Co, respectively. With the help of quantum transport calculations, we address the conductive properties of a free-standing WS_2 sheet suspended between two Zr contacts. It is found that such a device behaves like a diode with steep I-V characteristics. Spin-polarized transport is calculated for such a device with a floating-gate Co electrode added. Depending on the geometrical shape of the Co gate and the energy of the carriers in WS_2, the transmission of spin majority and minority electrons may differ by up to an order of magnitude. Thus the steep I-V characteristics of the nanoscale device makes it possible to realize a spin filter.
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Submitted 18 October, 2018;
originally announced October 2018.
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Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions
Authors:
Benjamin Geisler,
Peter Kratzer
Abstract:
The electronic transport and spincaloric properties of epitaxial magnetic tunnel junctions with half-metallic Co$_2$MnSi Heusler electrodes, MgO tunneling barriers, and different interface terminations are investigated by using first-principles calculations. A new approach to spincaloric properties is presented that circumvents the linear response approximation inherent in the Seebeck coefficient…
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The electronic transport and spincaloric properties of epitaxial magnetic tunnel junctions with half-metallic Co$_2$MnSi Heusler electrodes, MgO tunneling barriers, and different interface terminations are investigated by using first-principles calculations. A new approach to spincaloric properties is presented that circumvents the linear response approximation inherent in the Seebeck coefficient and compared to the method of Sivan and Imry. This approach supports two different temperatures in the two electrodes and provides the exact current and/or voltage response of the system. Moreover, it accounts for temperature-dependent chemical potentials in the electrodes and finite-bias effects. We find that especially the former are important for obtaining qualitatively correct results, even if the variations of the chemical potentials are small. It is shown how the spincaloric properties can be tailored by the choice of the growth conditions. We find a large effective and spin-dependent Seebeck coefficient of $-65$ $μ$V/K at room temperature for the purely Co-terminated interface. We suggest to use such interfaces in thermally operated magnetoresistive random access memory modules, which exploit the magneto-Seebeck effect, to maximize the thermally induced readout voltage.
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Submitted 15 May, 2018;
originally announced May 2018.
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Atomic-scale detection of magnetic impurity interactions in bulk semiconductors
Authors:
Benjamin Geisler,
Peter Kratzer
Abstract:
We demonstrate on the basis of ab initio simulations how passivated semiconductor surfaces can be exploited to study bulklike interaction properties and wave functions of magnetic impurities on the atomic scale with conventional and spin-polarized scanning tunneling microscopy. By applying our approach to the case of $3d$ transition metal impurities close to the H/Si$(111)$ surface, we show exempl…
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We demonstrate on the basis of ab initio simulations how passivated semiconductor surfaces can be exploited to study bulklike interaction properties and wave functions of magnetic impurities on the atomic scale with conventional and spin-polarized scanning tunneling microscopy. By applying our approach to the case of $3d$ transition metal impurities close to the H/Si$(111)$ surface, we show exemplarily that their wave functions in Si are less extended than for Mn in GaAs, thus obstructing ferromagnetism in Si. Finally, we discuss possible applications of this method to other dilute magnetic semiconductors.
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Submitted 15 May, 2018;
originally announced May 2018.
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Magnetic monolayer Li$_{2}$N: Density Functional Theory Calculations
Authors:
Gul Rahman,
Altaf Ur Rahman,
Saima Kanwal,
P. Kratzer
Abstract:
Density functional theory (DFT) calculations are used to investigate the electronic and magnetic structures of a two-dimensional (2D) monolayer Li$_{2}$N. It is shown that bulk Li$_{3}$N is a non-magnetic semiconductor. The non-spinpolarized DFT calculations show that $p$ electrons of N in 2D Li$_{2}$N form a narrow band at the Fermi energy $E_{\rm{F}}$ due to a low coordination number, and the de…
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Density functional theory (DFT) calculations are used to investigate the electronic and magnetic structures of a two-dimensional (2D) monolayer Li$_{2}$N. It is shown that bulk Li$_{3}$N is a non-magnetic semiconductor. The non-spinpolarized DFT calculations show that $p$ electrons of N in 2D Li$_{2}$N form a narrow band at the Fermi energy $E_{\rm{F}}$ due to a low coordination number, and the density of states at the Fermi energy ($g(E_{\rm{F}}$)) is increased as compared with bulk Li$_{3}$N. The large $g(E_{\rm{F}}$) shows instability towards magnetism in Stoner's mean field model. The spin-polarized calculations reveal that 2D Li$_{2}$N is magnetic without intrinsic or impurity defects. The magnetic moment of 1.0\,$μ_{\rm{B}}$ in 2D Li$_{2}$N is mainly contributed by the $p_{z}$ electrons of N, and the band structure shows half-metallic behavior. {Dynamic instability in planar Li$_{2}$N monolayer is observed, but a buckled Li$_{2}$N monolayer is found to be dynamically stable.} The ferromagnetic (FM) and antiferromagnetic (AFM) coupling between the N atoms is also investigated to access the exchange field strength. {We found that planar (buckled) 2D Li$_{2}$N is a ferromagnetic material with Curie temperature $T_{c}$ of 161 (572) K.}
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Submitted 12 October, 2017;
originally announced October 2017.
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Native defects in the Co$_2$Ti$Z$ ($Z=$ Si, Ge, Sn) full Heusler alloys: formation and influence on the thermoelectric properties
Authors:
Voicu Popescu,
Peter Kratzer,
Sebastian Wimmer,
Hubert Ebert
Abstract:
We have performed first-principles investigations on the native defects in the full Heusler alloys Co$_2$Ti$Z$ ($Z$ one of the group IV elements Si, Ge, Sn), determining their formation energies and how they influence the transport properties. We find that Co vacancies (Vc) in all compounds and the Ti$_\text{Sn}$ anti-site exhibit negative formation energies. The smallest positive values occur for…
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We have performed first-principles investigations on the native defects in the full Heusler alloys Co$_2$Ti$Z$ ($Z$ one of the group IV elements Si, Ge, Sn), determining their formation energies and how they influence the transport properties. We find that Co vacancies (Vc) in all compounds and the Ti$_\text{Sn}$ anti-site exhibit negative formation energies. The smallest positive values occur for Co in excess on anti-sites (Co$_Z$ or Co$_\text{Ti}$) and for Ti$_Z$. The most abundant native defects were modeled as dilute alloys, treated with the coherent potential approximation in combination with the multiple-scattering theory Green function approach. The self-consistent potentials determined this way were used to calculate the residual resistivity via the Kubo-Greenwood formula and, based on its energy dependence, the Seebeck coefficient of the systems. The latter is shown to depend significantly on the type of defect, leading to variations that are related to subtle, spin-orbit coupling induced, changes in the electronic structure above the half-metallic gap. Two of the systems, Vc$_\text{Co}$ and Co$_Z$, are found to exhibit a negative Seebeck coefficient. This observation, together with their low formation energy, offers an explanation for the experimentally observed negative Seebeck coefficient of the Co$_2$Ti$Z$ compounds as being due to unintentionally created native defects.
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Submitted 5 July, 2017; v1 submitted 1 April, 2017;
originally announced April 2017.
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Detection of adsorbed transition-metal porphyrins by spin-dependent conductance of graphene nanoribbon
Authors:
P. Kratzer,
Sherif Abdulkader Tawfik,
X. Y. Cui,
C. Stampfl
Abstract:
Electronic transport in a zig-zag-edge graphene nanoribbon (GNR) and its modification by adsorbed transition metal porphyrins is studied by means of density functional theory calculations. The detachment reaction of the metal centre of the porphyrin is investigated both in the gas phase and for molecules adsorbed on the GNR. As most metal porphyrins are very stable against this reaction, it is fou…
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Electronic transport in a zig-zag-edge graphene nanoribbon (GNR) and its modification by adsorbed transition metal porphyrins is studied by means of density functional theory calculations. The detachment reaction of the metal centre of the porphyrin is investigated both in the gas phase and for molecules adsorbed on the GNR. As most metal porphyrins are very stable against this reaction, it is found that these molecules bind only weakly to a perfect nanoribbon. However, interaction with a single-atom vacancy in the GNR results in chemical bonding by the transition metal centre being shared between nitrogen atoms in the porphyrin ring and the carbon atoms next to the vacancy in the GNR. For both the physisorbed and the chemisorbed geometry, the inclusion of van der Waals interaction results in a significant enlargement of the binding energy and reduction of the adsorption height. Electronic transport calculations using non-equilibrium Greens functions show that the conductivity of the GNR is altered by the chemisorbed porphyrin molecules. Since the metal centers of porphyrins carry an element-specific magnetic moment, not only the net conductance, but also the spin-dependent conductance of the GNR is affected. In particular, the adsorption of Ru-porphyrin on the single-atom vacancy results in a very large spin polarization of the current of 88% at small applied source-drain voltages. Based on our results, we suggest that a spin valve constructed from a GNR with ferromagnetic contacts could be used as a sensitive detector that could discriminate between various metal porphyrins.
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Submitted 2 June, 2017; v1 submitted 19 March, 2017;
originally announced March 2017.
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The role of the van der Waals interactions in the adsorption of anthracene and pentacene on the Ag(111) surface
Authors:
Juliana M. Morbec,
Peter Kratzer
Abstract:
Using first-principles calculations based on density-functional theory (DFT) we investigated the effects of the van der Waals (vdW) interactions on the structural and electronic properties of anthracene and pentacene adsorbed on the Ag(111) surface. We found that the inclusion of vdW corrections strongly affects the binding of both anthracene/Ag(111) and pentacene/Ag(111), yielding adsorption heig…
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Using first-principles calculations based on density-functional theory (DFT) we investigated the effects of the van der Waals (vdW) interactions on the structural and electronic properties of anthracene and pentacene adsorbed on the Ag(111) surface. We found that the inclusion of vdW corrections strongly affects the binding of both anthracene/Ag(111) and pentacene/Ag(111), yielding adsorption heights and energies more consistent with the experimental results than standard DFT calculations with generalized gradient approximation (GGA). For anthracene/Ag(111) the effect of the vdW interactions is even more dramatic: we found that pure DFT-GGA calculations (without including vdW corrections) result in preference for a tilted configuration, in contrast to experimental observations of flat-lying adsorption; including vdW corrections, on the other hand, alters the binding geometry of anthracene/Ag(111), favoring the flat configuration. The electronic structure obtained using a self-consistent vdW scheme was found to be nearly indistinguishable from the conventional DFT electronic structure once the correct vdW geometry is employed for these physisorbed systems. Moreover, we show that a vdW correction scheme based on a hybrid functional DFT calculation (HSE) results in an improved description of the highest occupied molecular level of the adsorbed molecules.
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Submitted 20 December, 2016;
originally announced December 2016.
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Ternary Semiconductors NiZrSn and CoZrBi with half-Heusler structure: a first-principles study
Authors:
Gregor Fiedler,
Peter Kratzer
Abstract:
The ternary semiconductors NiZrSn and CoZrBi with C1_b crystal structure are introduced by calculating their basic structural, electronic and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (E_g = 0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a…
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The ternary semiconductors NiZrSn and CoZrBi with C1_b crystal structure are introduced by calculating their basic structural, electronic and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (E_g = 0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials ABC, the intrinsic point defects introduced by species A (Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Ni_i ) as well as the V_Ni Ni_i complex introduce defect states in the band gap, whereas the Ni vacancy (V_Ni) only reduces the size of the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 micro-V/K when p-doped, whereas NiZrSn possesses its maximum thermopower in the n-type regime. The reported difficulties in achieving p-type do** in NiZrSn could be rationalized by the unintended formation of Ni_i^2+ in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T=600K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni_2ZrSn phase.
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Submitted 5 August, 2016;
originally announced August 2016.
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Reduced thermal conductivity of TiNiSn/HfNiSn superlattices
Authors:
Paulina Hołuj,
Christoph Euler,
Benjamin Balke,
Ute Kolb,
Gregor Fiedler,
Mathis M. Müller,
Tino Jaeger,
Peter Kratzer,
Gerhard Jakob
Abstract:
Diminution of the thermal conductivity is a crucial aspect in thermoelectric research. We report a systematic and significant reduction of the cross-plane thermal conductivity in a model system consisting of DC sputtered TiNiSn and HfNiSn half-Heusler superlattices. The reduction of $κ$ is measured by the 3$ω$ method and originates from phonon scattering at the internal interfaces. Heat transport…
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Diminution of the thermal conductivity is a crucial aspect in thermoelectric research. We report a systematic and significant reduction of the cross-plane thermal conductivity in a model system consisting of DC sputtered TiNiSn and HfNiSn half-Heusler superlattices. The reduction of $κ$ is measured by the 3$ω$ method and originates from phonon scattering at the internal interfaces. Heat transport in the superlattices is calculated based on Boltzmann transport theory, including a diffusive mismatch model for the phonons at the internal interfaces. Down to superlattice periodicity of 3 nm the phonon spectrum mismatch between the superlattice components quantitatively explains the reduction of $κ$. For very thin individual layers the interface model breaks down and the artificial crystal shows an enhanced $κ$. We also present an enhanced ZT value for all investigated superlattices compared to the single TiNiSn and HfNiSn films.
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Submitted 6 August, 2015; v1 submitted 14 April, 2015;
originally announced April 2015.
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Large morphological sensitivity of the magnetothermopower in Co/Cu multilayered systems
Authors:
Voicu Popescu,
Peter Kratzer
Abstract:
We present results of first-principles calculations on the transport properties, both under an electric field or a temperature gradient, in the Co/Cu multilayered systems. The various effects brought about by the changes in the morphological parameters, such as the number of repeats and the layer thickness, are discussed in a systematic way. Our calculations show that the Seebeck coefficient and t…
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We present results of first-principles calculations on the transport properties, both under an electric field or a temperature gradient, in the Co/Cu multilayered systems. The various effects brought about by the changes in the morphological parameters, such as the number of repeats and the layer thickness, are discussed in a systematic way. Our calculations show that the Seebeck coefficient and the magnetothermopower (MTP) converge rather rapidly with the number of Co repeats. In the range of thin Co layers, we find strong variations in amplitude and sign of both the Seebeck coefficient and the MTP. These large variations, which have no correspondent in the (magneto)conductance, are shown to be the result of quantum well states present in the minority spin channel of thin Co layers.
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Submitted 5 December, 2014;
originally announced December 2014.
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Atomistic calculation of the thermoelectric properties of Si nanowires
Authors:
Igor Bejenari,
Peter Kratzer
Abstract:
The thermoelectric properties of 1.6 nm-thick Si square nanowires with [100] crystalline orientation are calculated over a wide temperature range from 0 K to 1000 K, taking into account atomistic electron-phonon interaction. In our model, the [010] and [001] facets are passivated by hydrogen and there are Si-Si dimers on the nanowire surface. The electronic structure was calculated by using the sp…
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The thermoelectric properties of 1.6 nm-thick Si square nanowires with [100] crystalline orientation are calculated over a wide temperature range from 0 K to 1000 K, taking into account atomistic electron-phonon interaction. In our model, the [010] and [001] facets are passivated by hydrogen and there are Si-Si dimers on the nanowire surface. The electronic structure was calculated by using the sp^3 spin-orbit-coupled atomistic second-nearest-neighbor tight-binding model. The phonon dispersion was calculated from a valence force field model of the Brenner type. A scheme for calculating electron-phonon matrix elements from a second-nearest neighbor tight-binding model is presented. Based on Fermi's golden rule, the electron-phonon transition rate was obtained by combining the electron and phonon eigenstates. Both elastic and inelastic scattering processes are taken into consideration. The temperature dependence of transport characteristics was calculated by using a solution of linearized Boltzmann transport equation obtained by means of the iterative Orthomin method. At room temperature, the electron mobility is 195 cm^2/(Vs) and increases with temperature, while a figure-of-mertit ZT=0.38 is reached for n-type do** with a concentration of n=10^19 cm^-3.
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Submitted 27 June, 2014;
originally announced June 2014.
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Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/Co$_2$TiSi/Al and Al/Co$_2$TiGe/Al contacts
Authors:
Benjamin Geisler,
Peter Kratzer,
Voicu Popescu
Abstract:
The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type Co$_2$Ti$Z$ ($Z=$ Si or G…
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The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type Co$_2$Ti$Z$ ($Z=$ Si or Ge) is stable under various growth conditions; and (ii) the conventional and spin-dependent Seebeck coefficients in such heterojunctions exhibit a strong dependence on both the spacer and the atomic composition of the Al/Heusler interface. The latter quantity gives a measure of the spin accumulation and varies between $+8$~$μ$V/K and $-3$~$μ$V/K near $300$~K, depending on whether a Ti-Ge or a Co-Co plane makes the contact between Al and Co$_2$TiGe in the trilayer. Our results show that it is in principle possible to tailor the spin-caloric effects by a targeted growth control of the samples.
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Submitted 15 May, 2014; v1 submitted 18 February, 2014;
originally announced February 2014.
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Electronic, magnetic and transport properties of full and half-metallic thin film Heusler alloys
Authors:
Denis Comtesse,
Benjamin Geisler,
Peter Entel,
Peter Kratzer,
László Szunyogh
Abstract:
The electronic and magnetic bulk properties of half-metallic Heusler alloys such as Co$_{2}$FeSi, Co$_{2}$FeAl, Co$_{2}$MnSi and Co$_{2}$MnAl are investigated by means of {\em ab initio} calculations in combination with Monte Carlo simulations. The electronic structure is analyzed using the plane wave code Quantum Espresso and magnetic exchange interactions are determined using the KKR method. Fro…
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The electronic and magnetic bulk properties of half-metallic Heusler alloys such as Co$_{2}$FeSi, Co$_{2}$FeAl, Co$_{2}$MnSi and Co$_{2}$MnAl are investigated by means of {\em ab initio} calculations in combination with Monte Carlo simulations. The electronic structure is analyzed using the plane wave code Quantum Espresso and magnetic exchange interactions are determined using the KKR method. From the magnetic exchange interactions the Curie temperature is obtained via Monte Carlo simulations. In addition, electronic transport properties of the trilayer systems consisting of two semi-infinite platinum leads and a Heusler layer in between are obtained from the fully relativistic KKR method by employing the Kubo-Greenwood formalism. The focus is on thermoelectric properties, namely the Seebeck effect and its spin dependence. It turns out that already thin Heusler layers provide highly polarized currents within the systems. This is attributed to the recovery of half-metallicity with increasing thickness. The absence of electronic states of the spin down electrons around the Fermi level suppresses the contribution of this spin channel to the total conductivity. This strongly influences the thermoelectric properties of such systems and results in polarized thermoelectric currents.
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Submitted 8 November, 2013;
originally announced November 2013.
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Comparison of density functionals for nitrogen impurities in ZnO
Authors:
Sung Sakong,
Johann Gutjahr,
Peter Kratzer
Abstract:
Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the…
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Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g. concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials.
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Submitted 24 May, 2013;
originally announced May 2013.
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As vacancies, Ga antisites and Au impurities in Zincblende and Wurtzite GaAs nanowire segments from first principles
Authors:
Yaojun A. Du,
Sung Sakong,
Peter Kratzer
Abstract:
In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limite…
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In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limited growth regime. Hence, we carry out density-functional calculations for As vacancies, Ga_As antisites, and Au impurities in ZB and WZ GaAs crystals. Our results show that As vacancies can diffuse within in a ZB GaAs crystal with migration barriers of ~1.9 eV. Within WZ GaAs, As vacancy diffusion is found to be anisotropic, with low barriers of 1.60 up to 1.79 eV (depending on do** conditions) in the ab-plane, while there are higher barriers of 2.07 to 2.44 eV to diffuse along the c-axis. The formation energy of Au impurities is found to be generally much lower than those of arsenic vacancies or Ga_As antisites. Thus, Au impurities will be the dominant defects formed in Au-catalyzed nanowire growth. Moreover, we find that it is energetically more favorable by 1 to 2 eV for an Au impurity to replace a lattice Ga atom than a lattice As atom in GaAs. An Au substitutional defect for a lattice Ga atom in ZB GaAs is found to create a charge transfer level in the lower half of the band gap. While our calculations locate this level at E_v + 0.22eV, taking into account the inaccuracy of the density functional that ought to be corrected by a downshift of E_v by about 0.2eV results in good agreement with the experimental result of E_v + 0.4eV.
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Submitted 30 January, 2013;
originally announced January 2013.
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Anisotropic ferromagnetism in carbon doped zinc oxide from first-principles studies
Authors:
Sanjeev K. Nayak,
Markus E. Gruner,
Sung Sakong,
Shreekantha Sil,
Peter Kratzer,
Surjyo N. Behera,
Peter Entel
Abstract:
A density functional theory study of substitutional carbon impurities in ZnO has been performed, using both the generalized gradient approximation (GGA) and a hybrid functional (HSE06) as exchange-correlation functional. It is found that the non-spinpolarized C$_\mathrm{Zn}$ impurity is under almost all conditions thermodynamically more stable than the C$_\mathrm{O}$ impurity which has a magnetic…
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A density functional theory study of substitutional carbon impurities in ZnO has been performed, using both the generalized gradient approximation (GGA) and a hybrid functional (HSE06) as exchange-correlation functional. It is found that the non-spinpolarized C$_\mathrm{Zn}$ impurity is under almost all conditions thermodynamically more stable than the C$_\mathrm{O}$ impurity which has a magnetic moment of $2μ_{\mathrm{B}}$, with the exception of very O-poor and C-rich conditions. This explains the experimental difficulties in sample preparation in order to realize $d^{0}$-ferromagnetism in C-doped ZnO. From GGA calculations with large 96-atom supercells, we conclude that two C$_\mathrm{O}$-C$_\mathrm{O}$ impurities in ZnO interact ferromagnetically, but the interaction is found to be short-ranged and anisotropic, much stronger within the hexagonal $ab$-plane of wurtzite ZnO than along the c-axis. This layered ferromagnetism is attributed to the anisotropy of the dispersion of carbon impurity bands near the Fermi level for C$_{\mathrm{O}}$ impurities in ZnO. From the calculated results, we derive that a C$_{\mathrm{O}}$ concentration between 2% and 6% should be optimal to achieve $d^{0}$-ferromagnetism in C-doped ZnO.
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Submitted 25 May, 2012;
originally announced May 2012.
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Magnetism in C or N-doped MgO and ZnO: density-functional study of impurity pairs
Authors:
Hua Wu,
Alessandro Stroppa,
Sung Sakong,
Silvia Picozzi,
Matthias Scheffler,
Peter Kratzer
Abstract:
It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the…
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It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the spin-polarized C2 ppπ* states with the host conduction band results in a long-range ferromagnetic interaction. Magnetism of open-shell impurity molecules is proposed as a possible route to d0-ferromagnetism in oxide spintronic materials.
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Submitted 11 December, 2010;
originally announced December 2010.
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Modeling materials with optimized transport properties
Authors:
Peter Kratzer,
Vladimir M. Fomin,
B. Hülsen,
M. Scheffler
Abstract:
Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various scale-bridging tools to establish correlations between the macroscopic properties and the atomic structure of materials. For examples, magnetic memory devices exploiting…
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Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various scale-bridging tools to establish correlations between the macroscopic properties and the atomic structure of materials. For examples, magnetic memory devices exploiting the tunneling magneto-resistance (TMR) effect depend crucially on the spin polarization of the electrodes. Heusler alloys, e.g. Co2MnSi, if perfectly ordered, are ferromagnetic half-metals with (ideally) 100% spin polarization. Their performance as electrodes in TMR devices is limited by atomic disorder and deviations from perfect stoichiometry, but also by interface states at the tunneling barrier. We use ab initio thermodynamics in conjunction with the cluster expansion technique to show that excess manganese in the alloy and at the interface helps to preserve the desired half-metallic property. As another example, nanostructured materials with a reduced thermal conductivity but good electrical conductivity are sought for applications in thermoelectrics. Semiconductor heterostructures with a regular arrangement of nanoscale inclusions ('quantum dot superlattices') hold the promise of a high thermoelectric figure of merit. Our theoretical analysis reveals that an increased figure of merit is to be expected if the quantum dot size, the superlattice period and the do** level are all suitably fine-tuned. Such a superlattice thus constitutes a material whose transport properties are controlled by geometrical features at the nanoscale.
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Submitted 1 November, 2010;
originally announced November 2010.
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Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study
Authors:
Christian D. R. Ludwig,
Thomas Gruhn,
Claudia Felser,
Tanja Schilling,
Johannes Windeln,
Peter Kratzer
Abstract:
Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS be…
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Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells.
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Submitted 7 April, 2010;
originally announced April 2010.
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Monte Carlo and kinetic Monte Carlo methods
Authors:
Peter Kratzer
Abstract:
This article reviews the basic computational techniques for carrying out multi-scale simulations using statistical methods, with the focus on simulations of epitaxial growth. First, the statistical-physics background behind Monte Carlo simulations is briefly described. The kinetic Monte Carlo (kMC) method is introduced as an extension of the more wide-spread thermodynamic Monte Carlo methods, an…
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This article reviews the basic computational techniques for carrying out multi-scale simulations using statistical methods, with the focus on simulations of epitaxial growth. First, the statistical-physics background behind Monte Carlo simulations is briefly described. The kinetic Monte Carlo (kMC) method is introduced as an extension of the more wide-spread thermodynamic Monte Carlo methods, and algorithms for kMC simulations, including parallel ones, are discussed in some detail. The step from the atomistic picture to the more coarse-grained description of Monte Carlo simulations is exemplified for the case of surface diffusion. Here, the aim is the derivation of rate constants from knowledge about the underlying atomic processes. Both the simple approach of Transition State Theory, as well as more recent approaches using accelerated molecular dynamics are reviewed. Finally, I address the point that simplifications often need to be introduced in practical Monte Carlo simulations in order to reduce the complexity of 'real' atomic processes. Different 'flavors' of kMC simulations and the potential pitfalls related to the reduction of complexity are presented in the context of simulations of epitaxial growth.
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Submitted 16 April, 2009;
originally announced April 2009.
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Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study
Authors:
B. Hülsen,
M. Scheffler,
P. Kratzer
Abstract:
A computational study of the epitaxial Co2MnSi(001)/MgO(001) interface relevant to tunneling magnetoresistive (TMR) devices is presented. Employing ab initio atomistic thermodynamics, we show that the Co- or MnSi-planes of bulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mn termination requires non-equilibrium conditions. Except for the pure Mn interface, the half-metallic p…
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A computational study of the epitaxial Co2MnSi(001)/MgO(001) interface relevant to tunneling magnetoresistive (TMR) devices is presented. Employing ab initio atomistic thermodynamics, we show that the Co- or MnSi-planes of bulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mn termination requires non-equilibrium conditions. Except for the pure Mn interface, the half-metallic property of bulk Co2MnSi is disrupted by interface bands. Even so, at homogeneous Mn or Co interfaces these bands contribute little to the minority-spin conductance through an MgO barrier, and hence such terminations could perform strongly in TMR devices.
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Submitted 3 August, 2009; v1 submitted 12 March, 2009;
originally announced March 2009.
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Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon
Authors:
J H Dil,
B Huelsen,
T U Kampen,
P Kratzer,
K Horn
Abstract:
The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the…
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The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centered cubic to the bulk body-centered tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formations of quantum well states in films thicker than 2 ML.
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Submitted 4 November, 2008;
originally announced November 2008.
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Thermodynamics of the Heusler alloy Co_2-xMn_1+xSi: a combined density functional theory and cluster expansion study
Authors:
Björn Hülsen,
Peter Kratzer,
Matthias Scheffler
Abstract:
Previous studies indicated that intrinsic point defects play a crucial role for the density of states of ferromagnetic half-metals in the band gap region: At large concentrations, defect-derived bands might close the gap at the Fermi energy in the minority spin channel. In this work, structural disorder in the Co- and Mn-sublattices of the full Heusler alloy Co_2-xMn_1+xSi (-1 < x < 2) is invest…
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Previous studies indicated that intrinsic point defects play a crucial role for the density of states of ferromagnetic half-metals in the band gap region: At large concentrations, defect-derived bands might close the gap at the Fermi energy in the minority spin channel. In this work, structural disorder in the Co- and Mn-sublattices of the full Heusler alloy Co_2-xMn_1+xSi (-1 < x < 2) is investigated with a cluster expansion approach, parametrized using all-electron density functional theory calculations. By establishing two separate cluster expansions, one for the formation energy and one for the total spin moment, we are in position to determine the stability of different configurations, to predict new (also half-metallic) ground states and to extend the known Slater-Pauling rule for ideally stoichiometric Heusler alloys to non-stoichiometric, Mn-rich compositions. This enables us to identify potentially half-metallic structures in the Mn-rich region. With the help of Monte Carlo simulations based on the cluster expansion, we establish theoretically that Co_2-xMn_1+xSi close to the stoichiometric composition ought to show a high degree of structural order in thermodynamic equilibrium. Hence, samples prepared with the correct stoichiometry should indeed be half-metallic after thermal annealing. Moreover, we predict that adding a small amount of Mn to stoichiometric Co_2MnSi allows to suppress the thermally activated formation of detrimental Co antisites. At Mn-rich compositions (x>1), the ordered ground state structures predicted for zero temperature are found to be thermally unstable and to decompose into Co2MnSi and Mn3Si above room temperature.
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Submitted 12 March, 2009; v1 submitted 29 October, 2008;
originally announced October 2008.
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Electron-hole spectra created by adsorption on metals from density-functional theory
Authors:
M. Timmer,
P. Kratzer
Abstract:
Non-adiabaticity in adsorption on metal surfaces gives rise to a number of measurable effects, such as chemicurrents and exo-electron emission. Here we present a quantitative theory of chemicurrents on the basis of ground-state density-functional theory (DFT) calculations of the effective electronic potential and the Kohn-Sham band structure. Excitation probabilities are calculated both for elec…
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Non-adiabaticity in adsorption on metal surfaces gives rise to a number of measurable effects, such as chemicurrents and exo-electron emission. Here we present a quantitative theory of chemicurrents on the basis of ground-state density-functional theory (DFT) calculations of the effective electronic potential and the Kohn-Sham band structure. Excitation probabilities are calculated both for electron-hole pairs and for electrons and holes separately from first-order time-dependent perturbation theory. This is accomplished by evaluating the matrix elements (between Kohn-Sham states) of the rate of change of the effective electronic potential between subsequent (static) DFT calculations. Our approach is related to the theory of electronic friction, but allows for direct access to the excitation spectra. The method is applied to adsorption of atomic hydrogen isotopes on the Al(111) surface. The results are compatible with the available experimental data (for noble metal surfaces); in particular, the observed isotope effect in H versus D adsorption is described by the present theory. Moreover, the results are in qualitative agreement with computationally elaborate calculations of the full dynamics within time-dependent density-functional theory, with the notable exception of effects due to the spin dynamics. Being a perturbational approach, the method proposed here is simple enough to be applied to a wide class of adsorbates and surfaces, while at the same time allowing us to extract system-specific information.
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Submitted 11 March, 2009; v1 submitted 29 October, 2008;
originally announced October 2008.
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Adsorption of Indium on a InAs wetting layer deposited on the GaAs(001) surface
Authors:
Marcello Rosini,
Rita Magri,
Peter Kratzer
Abstract:
In this work we perform a first-principles study of the adsorption properties of an In adatom deposited on 1.75 monolayers (ML) InAs, forming a wetting layer on GaAs$(001)$ with the $α_2 (2\times4)$ or $β_2 (2\times4)$ reconstruction. The structural properties of these reconstructions have been studied: we determine the equilibrium geometry of the surfaces and their stability for various growth…
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In this work we perform a first-principles study of the adsorption properties of an In adatom deposited on 1.75 monolayers (ML) InAs, forming a wetting layer on GaAs$(001)$ with the $α_2 (2\times4)$ or $β_2 (2\times4)$ reconstruction. The structural properties of these reconstructions have been studied: we determine the equilibrium geometry of the surfaces and their stability for various growth conditions. We have then carried out a detailed study of the potential energy surface (PES) for an In adsorbate, finding the minima and the saddle points. The main characteristics of the PES and the bonding configurations of the In adatom on the surface are analyzed by comparing with analogous studies reported in the literature, trying to extract the effects due to: (i) the compressive strain to which the InAs adlayer is subjected, (ii) the particular surface reconstruction, and (iii) the wetting layer composition. We found that, in general, stable adsorption sites are located at: (i) locations besides the As in-dimers, (ii) positions bridging two As in-dimers, (iii) between two adjacent ad-dimers (only in $β_2$), and (iv) locations bridging two As ad-dimers. We find also other shallower adsorption sites which are more reconstruction specific due to the lower symmetry of the $α_2$ reconstruction compared to the $β_2$ reconstruction.
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Submitted 11 January, 2008;
originally announced January 2008.