Showing 1–44 of 44 results for author: Krasheninnikov, A V

Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr

Authors: Kaiman Lin, Yi Li, Mahdi Ghorbani-Asl, Zdenek Sofer, Stephan Winnerl, Artur Erbe, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou, Ya** Dan, Slawomir Prucnal

Abstract: This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions ac… ▽ More This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS$_{2}$

Authors: Daniel Jansen, Tfyeche Tounsi, Jeison Fischer, Arkady V. Krasheninnikov, Thomas Michely, Hannu-Pekka Komsa, Wouter Jolie

Abstract: We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Tel… ▽ More We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Teller distorted states with reduced orbital symmetry in the sulfur vacancies. Density functional theory calculations rationalize our experimental results. Additionally, we provide evidence for molecule-like hybrid orbitals in artificially created sulfur vacancy dimers, which illustrates the potential of our technique for the development of extended defect lattices and tailored electronic band structures. △ Less

Submitted 26 March, 2024; v1 submitted 18 January, 2024; originally announced January 2024.

Comments: 20 pages, 14 figures

Magnetic State Control of Non-van der Waals 2D Materials by Hydrogenation

Authors: Tom Barnowsky, Stefano Curtarolo, Arkady V. Krasheninnikov, Thomas Heine, Rico Friedrich

Abstract: Controlling the magnetic state of two-dimensional (2D) materials is crucial for spintronic applications. By employing data-mining and autonomous density functional theory calculations, we demonstrate the switching of magnetic properties of 2D non-van der Waals materials upon hydrogen passivation. The magnetic configurations are tuned to states with flipped and enhanced moments. For 2D CdTiO$_3$ -… ▽ More Controlling the magnetic state of two-dimensional (2D) materials is crucial for spintronic applications. By employing data-mining and autonomous density functional theory calculations, we demonstrate the switching of magnetic properties of 2D non-van der Waals materials upon hydrogen passivation. The magnetic configurations are tuned to states with flipped and enhanced moments. For 2D CdTiO$_3$ - a nonmagnetic compound in the pristine case - we observe an onset of ferromagnetism upon hydrogenation. Further investigation of the magnetization density of the pristine and passivated systems provides a detailed analysis of modified local spin symmetries and the emergence of ferromagnetism. Our results indicate that selective surface passivation is a powerful tool for tailoring magnetic properties of nanomaterials such as non-vdW 2D compounds. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Comments: 12 pages, 10 figures

Roadmap for focused ion beam technologies

Authors: Katja Höflich, Gerhard Hobler, Frances I. Allen, Tom Wirtz, Gemma Rius, Lisa McElwee-White, Arkady V. Krasheninnikov, Matthias Schmidt, Ivo Utke, Nico Klingner, Markus Osenberg, Rosa Córdoba, Flyura Djurabekova, Ingo Manke, Philip Moll, Mariachiara Manoccio, José Marıa De Teresa, Lothar Bischoff, Johann Michler, Olivier De Castro, Anne Delobbe, Peter Dunne, Oleksandr V. Dobrovolskiy, Natalie Frese, Armin Gölzhäuser , et al. (7 additional authors not shown)

Abstract: The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat… ▽ More The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout. △ Less

Submitted 6 October, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: This publication is based upon work from the COST Action FIT4NANO CA19140, supported by COST (European Cooperation in Science and Technology) https://www.cost.eu/. Financial support from COST Action CA19140 is acknowledged http://www.fit4nano.eu/ Version 3 has many text and language edits as well as layout tuning but no substantial new content

Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions

Authors: Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina, Yi Li, Kaiman Lin, Fabian Ganss, René Hübner, Zdenek Sofer, Florian Dirnberger, Akashdeep Kamra, Arkady V. Krasheninnikov, Slawomir Prucnal, Manfred Helm, Shengqiang Zhou

Abstract: Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic i… ▽ More Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers. △ Less

Submitted 27 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 25 pages including the supporting information, published as Nano Lett. 23, 8468-8473 (2023)

Journal ref: Nano Lett. 23, 8468-8473 (2023)

Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe$_2$

Authors: Valeria Sheina, Guillaume Lang, Vasily Stolyarov, Vyacheslav Marchenkov, Sergey Naumov, Alexandra Perevalova, Jean-Christophe Girard, Guillemin Rodary, Christophe David, Leonnel Romuald Sop, Debora Pierucci, Abdelkarim Ouerghi, Jean-Louis Cantin, Brigitte Leridon, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Hervé Aubin

Abstract: In semiconductors, the identification of do** atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Ele… ▽ More In semiconductors, the identification of do** atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Electron spin resonance measurements show that this dopant carries a spin with long-lived nanoseconds coherence time. Using scanning tunneling spectroscopy, we find that the hydrogenic wavefunctions associated with the dopant levels have characteristics spatial modulations that result from their hybridization to the \textbf{Q}-valleys of the conduction band. From a Fourier analysis of the conductance maps, we find that the amplitude and phase of the Fourier components change with energy according to the different irreducible representations of the impurity-site point-group symmetry. These results demonstrate that a dopant can inherit the locked spin-valley properties of the semiconductor and so exhibit long spin-coherence time. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Comments: Main text : 20 pages, 5 figures. Supplementary : 21 pages, 16 figures

Optical properties of MoSe$_2$ monolayer implanted with ultra-low energy Cr ions

Authors: Minh N. Bui, Stefan Rost, Manuel Auge, Lanqing Zhou, Christoph Friedrich, Stefan Blügel, Silvan Kretschmer, Arkady V. Krasheninnikov, Kenji Watanabe, Takashi Taniguchi, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynał

Abstract: The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron do**. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and wea… ▽ More The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron do**. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by do**. △ Less

Submitted 25 April, 2023; v1 submitted 21 April, 2023; originally announced April 2023.

Electron Holographic Map** of Structural and Electronic Reconstruction at Mono- and Bilayer Steps of h-BN

Authors: Subakti Subakti, Mohammadreza Daqiqshirazi, Daniel Wolf, Martin Linck, Felix L. Kern, Mitisha Jain, Silvan Kretschmer, Arkady V. Krasheninnikov, Thomas Brumme, Axel Lubk

Abstract: Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag e… ▽ More Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag edges and steps comprising two monolayers and the absence of which at monolayer steps. The technique paves the way for studying other charge (de)localization phenomena in 2D materials, e.g., at polar edges, topological edge states and defects. △ Less

Submitted 8 October, 2022; originally announced October 2022.

A New Group of Two-Dimensional Non-van der Waals Materials with Ultra Low Exfoliation Energies

Authors: Tom Barnowsky, Arkady V. Krasheninnikov, Rico Friedrich

Abstract: The exfoliation energy - quantifying the energy required to extract a two-dimensional (2D) sheet from the surface of a bulk material - is a key parameter determining the synthesizability of 2D compounds. Here, using ab initio calculations, we present a new group of non-van der Waals 2D materials derived from non-layered crystals which exhibit ultra low exfoliation energies. In particular for sulfi… ▽ More The exfoliation energy - quantifying the energy required to extract a two-dimensional (2D) sheet from the surface of a bulk material - is a key parameter determining the synthesizability of 2D compounds. Here, using ab initio calculations, we present a new group of non-van der Waals 2D materials derived from non-layered crystals which exhibit ultra low exfoliation energies. In particular for sulfides, surface relaxations are essential to correctly describe the associated energy gain needed to obtain reliable results. Taking into account long-range dispersive interactions has only a minor effect on the energetics and ultimately proves that the exfoliation energies are close to the ones of traditional van der Waals bound 2D compounds. The candidates with the lowest energies, 2D SbTlO$_3$ and MnNaCl$_3$, exhibit appealing electronic, potential topological, and magnetic features as evident from the calculated band structures making these systems an attractive platform for fundamental and applied nanoscience. △ Less

Submitted 30 September, 2022; originally announced September 2022.

Comments: 23 pages, 14 figures

Velocity distributions of particles sputtered from supported 2D-MoS$_2$ during highly charged ion irradiation

Authors: Lucia Skopinski, Silvan Kretschmer, Philipp Ernst, Matthias Herder, Lukas Madauß, Lars Breuer, Arkady V. Krasheninnikov, Marika Schleberger

Abstract: The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energi… ▽ More The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energies. However, the relevance of various interaction mechanisms is unknown. Here we show that for slow HCI (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and transferred kinetic energy are independent from each other, which is consistent with our atomistic simulations. We have irradiated substrate supported (Au, SiO$_2$) monolayers of MoS$_2$ with highly charged xenon ions (charge state: 17$+$ - 40$+$), extracted the emitted neutral, post-ionized Mo particles into a time-of-flight mass spectrometer and determined their velocity distributions. We find two main contributions, one at high velocities and a second one at lower velocities, and assign them to kinetic and potential effects respectively. Our data suggests that the dominant mechanism for potential sputtering is related to electron-phonon coupling, while non-thermal processes play no significant role. We anticipate that our work will be a starting point for further experiments and simulations to determine whether the different processes resulting from E$_{pot}$ and E$_{kin}$ can be separated or whether synergistic effects play a role. △ Less

Submitted 9 August, 2022; originally announced August 2022.

Comments: 9 pages, 5 figures

One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

Authors: Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real, Julian Picker, Emad Najafidehaghani, Francis Davies, Christof Neumann, Cedric Robert, Peter Wiecha, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Arkady V. Krasheninnikov, Bernhard Urbaszek, Antony George, Andrey Turchanin

Abstract: We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 s… ▽ More We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Data-driven quest for two-dimensional non-van der Waals materials

Authors: Rico Friedrich, Mahdi Ghorbani-Asl, Stefano Curtarolo, Arkady V. Krasheninnikov

Abstract: Two-dimensional (2D) materials are frequently associated with the sheets which form bulk layered compounds bonded by van der Waals (vdW) forces. The anisotropy and weak interaction between the sheets have also been the main criteria in the computational search for new 2D systems, which predicted about 2000 exfoliable compounds. However, several representatives of a new type of non-vdW 2D systems,… ▽ More Two-dimensional (2D) materials are frequently associated with the sheets which form bulk layered compounds bonded by van der Waals (vdW) forces. The anisotropy and weak interaction between the sheets have also been the main criteria in the computational search for new 2D systems, which predicted about 2000 exfoliable compounds. However, several representatives of a new type of non-vdW 2D systems, such as hematene or ilmenene, which have no layered 3D analogues, and which, unlike, e.g. silicene, do not need to strongly interact with the substrate to be stable, were recently manufactured. The family of non-vdW 2D materials is an attractive playground for data-driven high-throughput approaches as computational design principles are still missing. Here, we outline a new set of 8 binary and 20 ternary candidates by filtering the AFLOW-ICSD database according to the structural prototype of the first two template systems realized in experiment. All materials show a strong structural relaxation upon confinement to 2D which is essential to correctly estimate the bonding strength between facets. The oxidation state of the cations at the surface of the sheets is demonstrated to regulate the inter-facet binding energy with low oxidation states leading to weak bonding. We anticipate this descriptor to be highly useful to obtain novel 2D materials, providing clear guidelines for experiments. Our calculations further indicate that the materials exhibit a vast range of appealing electronic, optical and magnetic properties, which is expected to also make them attractive for potential applications particularly in spintronics. △ Less

Submitted 4 October, 2021; originally announced October 2021.

Comments: 26 pages, 6 figures

Chlorine do** of MoSe2 flakes by ion implantation

Authors: Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl, René Hübner, Juanmei Duan, Yidan Wei, Divanshu Sharma, Dietrich R. T. Zahn, René Ziegenrücker, Ulrich Kentsch, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou

Abstract: The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrat… ▽ More The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrate n-type do** in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type do** of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 32 pages, 10 figures

Journal ref: Nanoscale 13, 5834 (2021)

Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

Authors: Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl, Denise Erb, Liang Hu, Arkady V. Krasheninnikov, Harald Schneider, Lars Rebohle, Artur Erbe, Manfred Helm, Yu-Jia Zeng, Shengqiang Zhou, Slawomir Prucnal

Abstract: Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is impo… ▽ More Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pum** with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer do** effect using type-I band alignment in vdWH. △ Less

Submitted 26 July, 2021; originally announced July 2021.

Comments: 21 pages, including the suppl. materials, accepted at Adv. Fun. Mater

Extrinsic localized excitons in patterned 2D semiconductors

Authors: D Yagodkin, K Greben, A Eljarrat, S Kovalchuk, M Ghorbani-Asl, M Jain, S Kretschmer, N Severin, J P Rabe, A V Krasheninnikov, C T Koch, K I Bolotin

Abstract: We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,… ▽ More We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies. △ Less

Submitted 29 March, 2022; v1 submitted 28 May, 2021; originally announced May 2021.

Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations

Authors: Arsalan Hashemi, Christopher Linderalv, Arkady V. Krasheninnikov, Tapio Ala-Nissila, Paul Erhart, Hannu-Pekka Komsa

Abstract: Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density fu… ▽ More Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density functional theory calculations to investigate the photoluminescence lineshapes of selected, experimentally observed color centers (including single vacancies, double vacancies, and vacancy impurity pairs) in 4H-SiC. The analysis of zero-phonon lines as well as Huang-Rhys and Debye-Waller factors are accompanied by a detailed study of the underlying lattice vibrations. We show that the defect lineshapes are governed by strong coupling to bulk phonons at lower energies and localized vibrational modes at higher energies. Generally, good agreement to the available experimental data is obtained, and thus we expect our theoretical work to be beneficial for the identification of defect signatures in the photoluminescence spectra and thereby advance the research in quantum photonics and quantum information processing. △ Less

Submitted 4 October, 2020; originally announced October 2020.

Comments: 8 pages

Journal ref: Phys. Rev. B 103, 125203 (2021)

Band Bending and Valence Band Quantization at Line Defects in MoS$_2$

Authors: Clifford Murray, Camiel van Efferen, Wouter Jolie, Jeison Antonio Fischer, Joshua Hall, Achim Rosch, Arkady V. Krasheninnikov, Hannu-Pekka Komsa, Thomas Michely

Abstract: The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantize… ▽ More The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary. △ Less

Submitted 13 July, 2020; originally announced July 2020.

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Authors: **g Shang, Xiao Tang, Yuantong Gu, Arkady V. Krasheninnikov, Silvia Picozzi, Changfeng Chen, Liangzhi Kou

Abstract: Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adj… ▽ More Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Local vibrational modes of Si vacancy spin qubits in SiC

Authors: Z. Shang, A. Hashemi, Y. Berencén, H. -P. Komsa, P. Erhart, A. V. Krasheninnikov, G. V. Astakhov

Abstract: Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan… ▽ More Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 31 January, 2020; originally announced February 2020.

Comments: 9 pages, 6 figures, corrected references

Journal ref: Phys. Rev. B 101, 144109 (2020)

Perforating freestanding molybdenum disulfide monolayers with highly charged ions

Authors: Roland Kozubek, Mukesh Tripathi, Mahdi Ghorbani-Asl, Silvan Kretschmer, Lukas Madauß, Erik Pollmann, Maria O'Brien, Niall McEvoy, Ursula Ludacka, Toma Susi, Georg S. Duesberg, Richard A. Wilhelm, Arkady V. Krasheninnikov, Jani Kotakoski, Marika Schleberger

Abstract: Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to… ▽ More Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Comments: 22 pages, 4 figures

Journal ref: J. Phys. Chem. Lett. 10, 5, 904-910 (2019)

Tomonaga-Luttinger liquid in a box: electrons confined within MoS$_2$ mirror twin boundaries

Authors: Wouter Jolie, Clifford Murray, Philipp S. Weiß, Joshua Hall, Fabian Portner, Nicolae Atodiresei, Arkady V. Krasheninnikov, Carsten Busse, Hannu-Pekka Komsa, Achim Rosch, Thomas Michely

Abstract: Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still ha… ▽ More Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still hampered by their difficult realization, their limited accessibility to measurements, and by competing or obscuring effects such as Peierls distortions or zero bias anomalies. Here we overcome these difficulties by constructing a well-isolated, one-dimensional metal of finite length present in MoS$_2$ mirror twin boundaries. Using scanning tunneling spectroscopy we measure the single-particle density of the interacting electron system as a function of energy and position in the 1D box. Comparison to theoretical modeling provides unambiguous evidence that we are observing spin-charge separation in real space. △ Less

Submitted 21 March, 2019; originally announced March 2019.

Comments: 13 pages, 8 figures

Journal ref: Phys. Rev. X 9, 011055 (2019)

Efficient method for calculating Raman spectra of solids with impurities and alloys and its application to two-dimensional transition metal dichalcogenides

Authors: Arsalan Hashemi, Arkady V. Krasheninnikov, Martti Puska, Hannu-Pekka Komsa

Abstract: Raman spectroscopy is a widely used, powerful, and nondestructive tool for studying the vibrational properties of bulk and low-dimensional materials. Raman spectra can be simulated using first-principles methods, but due to the high computational cost calculations are usually limited only to fairly small unit cells, which makes it difficult to carry out simulations for alloys and defects. Here, we… ▽ More Raman spectroscopy is a widely used, powerful, and nondestructive tool for studying the vibrational properties of bulk and low-dimensional materials. Raman spectra can be simulated using first-principles methods, but due to the high computational cost calculations are usually limited only to fairly small unit cells, which makes it difficult to carry out simulations for alloys and defects. Here, we develop an efficient method for simulating Raman spectra of alloys, benchmark it against full density-functional theory calculations, and apply it to several alloys of two-dimensional transition metal dichalcogenides. In this method, the Raman tensor for the supercell mode is constructed by summing up the Raman tensors of the pristine system weighted by the projections of the supercell vibrational modes to those of the pristine system. This approach is not limited to 2D materials and should be applicable to any crystalline solids with defects and impurities. To efficiently evaluate vibrational modes of very large supercells, we adopt mass approximation, although it is limited to chemically and structurally similar atomic substitutions. To benchmark our method, we first apply it to Mo$_x$W$_{(1-x)}$S$_2$ monolayer in the H-phase, where several experimental reports are available for comparison. Second, we consider Mo$_x$W$_{(1-x)}$Te$_2$ in the T'-phase, which has been proposed to be 2D topological insulator, but where experimental results for the monolayer alloy are still missing. We show that the projection scheme also provides a powerful tool for analyzing the origin of the alloy Raman-active modes in terms of the parent system eigenmodes. Finally, we examine the trends in characteristic Raman signatures for dilute concentrations of impurities in MoS$_2$. △ Less

Submitted 6 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Materials 3, 023806 (2019)

Momentum Conserved Ultrafast Charge Transfer Dynamics of Interlayer Excitons in vdW Heterostructures

Authors: Pranjal Kumar Gogoi, Yung-Chang Lin, Ryosuke Senga, Hannu-Pekka Komsa, Swee Liang Wong, Dongzhi Chi, Arkady V. Krasheninnikov, Lain-Jong Li, Mark B. H. Breese, Steven J. Pennycook, Andrew T. S. Wee, Kazu Suenaga

Abstract: Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably,… ▽ More Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably, the efficiency of 2D heterostructure devices is critically dependent on the charge transfer dynamics. However, the role of the relative rotation angle of the constituent layers on this charge transfer dynamics is hitherto unknown. Here, we investigate MoS$_2$/WSe$_2$ vdW heterostructures (hMWs) using monochromated low-loss electron energy loss (EEL) spectroscopy combined with aberration-corrected scanning transmission electron microscopy (STEM), and report that momentum conservation is a critical factor in the charge transfer dynamics of TMDC vdW heterostructures. The low-loss EEL spectra of the heterostructures with various rotation angles reveal that the charge transfer rate can be about one order-of-magnitude faster in the aligned (or anti-aligned) case than the misaligned cases. These results provide a deeper insight into the role of the fundamental principle of momentum conservation in 2D vdW heterostructure charge transfer dynamics. △ Less

Submitted 1 February, 2019; originally announced February 2019.

Comments: 33 pages, 5 figures

Thermal Transport in MoS$_2$ from Molecular Dynamics using Different Empirical Potentials

Authors: Ke Xu, Alexander J. Gabourie, Arsalan Hashemi, Zheyong Fan, Ning Wei, Amir Barati Farimani, Hannu-Pekka Komsa, Arkady V. Krasheninnikov, Eric Pop, Tapio Ala-Nissila

Abstract: Thermal properties of molybdenum disulfide (MoS$_2$) have recently attracted attention related to fundamentals of heat propagation in strongly anisotropic materials, and in the context of potential applications to optoelectronics and thermoelectrics. Multiple empirical potentials have been developed for classical molecular dynamics (MD) simulations of this material, but it has been unclear which p… ▽ More Thermal properties of molybdenum disulfide (MoS$_2$) have recently attracted attention related to fundamentals of heat propagation in strongly anisotropic materials, and in the context of potential applications to optoelectronics and thermoelectrics. Multiple empirical potentials have been developed for classical molecular dynamics (MD) simulations of this material, but it has been unclear which provides the most realistic results. Here, we calculate lattice thermal conductivity of single- and multi-layer pristine MoS$_2$ by employing three different thermal transport MD methods: equilibrium, nonequilibrium, and homogeneous nonequilibrium ones. These methods allow us to verify the consistency of our results and also facilitate comparisons with previous works, where different schemes have been adopted. Our results using variants of the Stillinger-Weber potential are at odds with some previous ones and we analyze the possible origins of the discrepancies in detail. We show that, among the potentials considered here, the reactive empirical bond order (REBO) potential gives the most reasonable predictions of thermal transport properties as compared to experimental data. With the REBO potential, we further find that isotope scattering has only a small effect on thermal conduction in MoS$_2$ and the in-plane thermal conductivity decreases with increasing layer number and saturates beyond about three layers. We identify the REBO potential as a transferable empirical potential for MD simulations of MoS$_2$ which can be used to study thermal transport properties in more complicated situations such as in systems containing defects or engineered nanoscale features. This work establishes a firm foundation for understanding heat transport properties of MoS$_2$ using MD simulations. △ Less

Submitted 18 November, 2018; originally announced November 2018.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. B 99, 054303 (2019)

Towards diluted magnetism in TaAs

Authors: Yu Liu, Zhilin Li, Liwei Guo, Xiaolong Chen, Ye Yuan, Chi Xu, René Hübner, Shavkat Akhmadaliev, Arkady V. Krasheninnikov, Alpha T. N'Diaye, Elke Arenholz, Manfred Helm, Shengqiang Zhou

Abstract: Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments fr… ▽ More Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics. △ Less

Submitted 28 September, 2017; v1 submitted 13 September, 2017; originally announced September 2017.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Materials 1, 044203 (2017)

Xe Irradiation of Graphene on Ir(111): From Trap** to Blistering

Authors: Charlotte Herbig, E. Harriet Åhlgren, Ulrike A. Schröder, Antonio J. Martínez-Galera, Mohammad A. Arman, Jani Kotakoski, Jan Knudsen, Arkady V. Krasheninnikov, Thomas Michely

Abstract: Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trap** is an unexpected and remarkable phenomenon, given the absence of chemical binding of Xe to Ir… ▽ More Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trap** is an unexpected and remarkable phenomenon, given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trap**. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate - 2D material interface or to enable confined reactions at high pressures and temperatures. △ Less

Submitted 12 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 92, 085429 (2015)

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Authors: Yung-Chang Lin, Dumitru O. Dumcenco, Hannu-Pekka Komsa, Yoshiko Niimi, Arkady V. Krasheninnikov, Ying-Sheng Huang, Kazu Suenaga

Abstract: The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around thes… ▽ More The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around these sites. This may explain the difficulties in achieving a high compositional rate of homogeneous Re do** in MoS2. In addition, an in situ coverage experiment together with density functional theory calculations discovered a high surface reactivity and agglomeration of other impurity atoms such as carbon at the Re doped sites. △ Less

Submitted 9 October, 2013; originally announced October 2013.

Comments: 15 pages, 4 figures, 1 table

Strains Induced by Point Defects in Graphene on a Metal

Authors: Nils Blanc, Fabien Jean, Arkady V. Krasheninnikov, Gilles Renaud, Johann Coraux

Abstract: Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Ou… ▽ More Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Our results unravel the microscopic relationship between point defects and strains in epitaxial graphene and suggest new avenues for graphene nanostructuring and engineering its properties through introduction of defects and intercalation of atoms and molecules between graphene and its metal substrate. △ Less

Submitted 2 September, 2013; originally announced September 2013.

Journal ref: Physical Review Letters 111 (2013) 085501

Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

Authors: Hannu-Pekka Komsa, Arkady V. Krasheninnikov

Abstract: We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers a… ▽ More We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers are retained. We find strong interaction between the Γ-point states in all TMD/TMD heterostructures, which can lead to an indirect gap. On the other hand, states near the K-point remain as in the monolayers. When TMDs are paired with BN or graphene layers, the interaction around Γ-point is negligible, and the electronic structure resembles that of two independent monolayers. Calculations of optical properties of the MoS2/WS2 system show that even when the valence and conduction band edges are located in different layers, the mixing of optical transitions is minimal, and the optical characteristics of the monolayers are largely retained in these heterostructures. The intensity of interlayer transitions is found to be negligibly small, a discouraging result for engineering the optical gap of TMDs by heterostructuring. △ Less

Submitted 11 September, 2013; v1 submitted 23 August, 2013; originally announced August 2013.

Comments: 7 pages, 7 figures; Title changed to match published version

Journal ref: Phys Rev B 88, 085318 (2013)

Dual origin of defect magnetism in graphene and its reversible switching by molecular do**

Authors: R. R. Nair, I-Ling Tsai, M. Sepioni, O. Lehtinen, J. Keinonen, A. V. Krasheninnikov, A. H. Castro Neto, M. I. Katsnelson, A. K. Geim, I. V. Grigorieva

Abstract: A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and t… ▽ More A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that adatoms magnetism in graphene is itinerant and can be controlled by do**, so that magnetic moments can be switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions: one coming from the same itinerant magnetism and the other due to broken bonds. Our work suggests that magnetic response of graphene can be controlled by the field effect, similar to its transport and optical properties, and that spin diffusion length can be significantly enhanced above a certain carrier density. △ Less

Submitted 10 May, 2013; v1 submitted 31 January, 2013; originally announced January 2013.

Comments: 15 pages, 8 figures

Journal ref: Nature Communications 4, 2010 (2013)

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and do**

Authors: Hannu-Pekka Komsa, Jani Kotakoski, Simon Kurasch, Ossi Lehtinen, Ute Kaiser, Arkady V. Krasheninnikov

Abstract: Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce… ▽ More Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Journal ref: Phys. Rev. Lett 109, 035503 (2012)

Are we van der Waals ready?

Authors: T. Björkman, A. Gulans, A. V. Krasheninnikov, R. M. Nieminen

Abstract: We apply a range of density-functional-theory-based methods capable of describing van der Waals interactions to weakly bonded layered solids in order to investigate their accuracy for extended systems. The methods under investigation are the local density approximation, semi-empirical force fields, non-local van der Waals density functionals and the random-phase approximation. We investigate the e… ▽ More We apply a range of density-functional-theory-based methods capable of describing van der Waals interactions to weakly bonded layered solids in order to investigate their accuracy for extended systems. The methods under investigation are the local density approximation, semi-empirical force fields, non-local van der Waals density functionals and the random-phase approximation. We investigate the equilibrium geometries, elastic constants and the binding energies of a large and diverse set of compounds and arrive at conclusions about the reliability of the different methods. The study also points to some directions of further development for the non-local van der Waals density functionals. △ Less

Submitted 15 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 24, 424218 (2012)

Ion irradiation tolerance of graphene as studied by atomistic simulations

Authors: E. H. Åhlgren, J. Kotakoski, O. Lehtinen, A. V. Krasheninnikov

Abstract: As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irradiation-induced damage in the graphene membrane may give rise to its mechanical failure. Using atomistic simulations, we demonstrate that irradiated g… ▽ More As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irradiation-induced damage in the graphene membrane may give rise to its mechanical failure. Using atomistic simulations, we demonstrate that irradiated graphene even with a high vacancy concentration does not show signs of such instability, indicating a considerable robustness of graphene windows. We further show that upper and lower estimates for the irradiation damage in graphene can be set using a simple model. △ Less

Submitted 8 May, 2012; originally announced May 2012.

Journal ref: Appl. Phys. Lett., 100, 233108 (2012)

Van der Waals bonding in layered compounds from advanced first-principles calculations

Authors: T. Björkman, A. Gulans, A. V. Krasheninnikov, R. M. Nieminen

Abstract: Although the precise microscopic knowledge of van der Waals interactions is crucial for understanding bonding in weakly bonded layered compounds, very little quantitative information on the strength of interlayer interaction in these materials is available, either from experiments or simulations. Here, using many-body perturbation and advanced density-functional theory techniques, we calculate the… ▽ More Although the precise microscopic knowledge of van der Waals interactions is crucial for understanding bonding in weakly bonded layered compounds, very little quantitative information on the strength of interlayer interaction in these materials is available, either from experiments or simulations. Here, using many-body perturbation and advanced density-functional theory techniques, we calculate the interlayer binding and exfoliation energies for a large number of layered compounds and show that, independent of the electronic structure of the material, the energies for most systems are around 20 meV/Å$^2$. This universality explains the successful exfoliation of a wide class of layered materials to produce two-dimensional systems, and furthers our understanding the properties of layered compounds in general. △ Less

Submitted 17 April, 2012; originally announced April 2012.

Comments: Accepted for publication in Physical Review Letters. Includes Supplementary Material

Journal ref: Phys. Rev. Lett. 108, 235502 (2012)

An accurate measurement of electron beam induced displacement cross sections for single-layer graphene

Authors: J. C. Meyer, F. Eder, S. Kurasch, V. Skakalova, J. Kotakoski, H. -J. Park, S. Roth, A. Chuvilin, S. Eyhusen, G. Benner, A. V. Krasheninnikov, U. Kaiser

Abstract: We present an accurate measurement and a quantitative analysis of electron-beam induced displacements of carbon atoms in single-layer graphene. We directly measure the atomic displacement ("knock-on") cross section by counting the lost atoms as a function of the electron beam energy and applied dose. Further, we separate knock-on damage (originating from the collision of the beam electrons with th… ▽ More We present an accurate measurement and a quantitative analysis of electron-beam induced displacements of carbon atoms in single-layer graphene. We directly measure the atomic displacement ("knock-on") cross section by counting the lost atoms as a function of the electron beam energy and applied dose. Further, we separate knock-on damage (originating from the collision of the beam electrons with the nucleus of the target atom) from other radiation damage mechanisms (e.g. ionization damage or chemical etching) by the comparison of ordinary (12C) and heavy (13C) graphene. Our analysis shows that a static lattice approximation is not sufficient to describe knock-on damage in this material, while a very good agreement between calculated and experimental cross sections is obtained if lattice vibrations are taken into account. △ Less

Submitted 8 May, 2012; v1 submitted 11 March, 2012; originally announced March 2012.

Comments: 10 pages including supplementary info

Journal ref: Phys. Rev. Lett. 108, 196102 (2012)

Spin-half paramagnetism in graphene induced by point defects

Authors: R. R. Nair, M. Sepioni, I-Ling Tsai, O. Lehtinen, J. Keinonen, A. V. Krasheninnikov, T. Thomson, A. K. Geim, I. V. Grigorieva

Abstract: Using magnetization measurements, we show that point defects in graphene - fluorine adatoms and irradiation defects (vacancies) - carry magnetic moments with spin 1/2. Both types of defects lead to notable paramagnetism but no magnetic ordering could be detected down to liquid helium temperatures. The induced paramagnetism dominates graphene's low-temperature magnetic properties despite the fact t… ▽ More Using magnetization measurements, we show that point defects in graphene - fluorine adatoms and irradiation defects (vacancies) - carry magnetic moments with spin 1/2. Both types of defects lead to notable paramagnetism but no magnetic ordering could be detected down to liquid helium temperatures. The induced paramagnetism dominates graphene's low-temperature magnetic properties despite the fact that maximum response we could achieve was limited to one moment per approximately 1000 carbon atoms. This limitation is explained by clustering of adatoms and, for the case of vacancies, by losing graphene's structural stability. △ Less

Submitted 26 January, 2012; v1 submitted 16 November, 2011; originally announced November 2011.

Comments: 14 pages, 14 figures

Journal ref: Nature Physics, vol. 8, 199 (2012)

Stone-Wales--type transformations in carbon nanostructures driven by electron irradiation

Authors: J. Kotakoski, J. C. Meyer, S. Kurasch, D. Santos-Cottin, U. Kaiser, A. V. Krasheninnikov

Abstract: Observations of topological defects associated with Stone-Wales-type transformations (i.e., bond rotations) in high resolution transmission electron microscopy (HRTEM) images of carbon nanostructures are at odds with the equilibrium thermodynamics of these systems. Here, by combining aberration-corrected HRTEM experiments and atomistic simulations, we show that such defects can be formed by single… ▽ More Observations of topological defects associated with Stone-Wales-type transformations (i.e., bond rotations) in high resolution transmission electron microscopy (HRTEM) images of carbon nanostructures are at odds with the equilibrium thermodynamics of these systems. Here, by combining aberration-corrected HRTEM experiments and atomistic simulations, we show that such defects can be formed by single electron impacts, and remarkably, at electron energies below the threshold for atomic displacements. We further study the mechanisms of irradiation-driven bond rotations, and explain why electron irradiation at moderate electron energies (\sim100 keV) tends to amorphize rather than perforate graphene. We also show via simulations that Stone-Wales defects can appear in curved graphitic structures due to incomplete recombination of irradiation-induced Frenkel defects, similar to formation of Wigner-type defects in silicon. △ Less

Submitted 9 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 83, 245420 (2011)

Cutting and controlled modification of graphene with ion beams

Authors: O. Lehtinen, J. Kotakoski, A. V. Krasheninnikov, J. Keinonen

Abstract: Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at ma… ▽ More Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at macroscopic time scales. Impacts of He, Ne, Ar, Kr, Xe and Ga ions with kinetic energies ranging from tens of eV to 10 MeV and angles of incidence between 0\circ and 88\circ are studied. Our results provide microscopic insights into the response of graphene to ion irradiation and can directly be used for the optimization of graphene cutting and patterning with focused ion beams. △ Less

Submitted 3 February, 2011; originally announced February 2011.

Journal ref: Nanotechnology 22, 175306 (2011)

Atomistic simulations of the implantation of low energy boron and nitrogen ions into graphene

Authors: E. H. Åhlgren, J. Kotakoski, A. V. Krasheninnikov

Abstract: By combining classical molecular dynamics simulations and density functional theory total energy calculations, we study the possibility of do** graphene with B/N atoms using low-energy ion irradiation. Our simulations show that the optimum irradiation energy is 50 eV with substitution probabilities of 55% for N and 40% for B. We further estimate probabilities for different defect configurations… ▽ More By combining classical molecular dynamics simulations and density functional theory total energy calculations, we study the possibility of do** graphene with B/N atoms using low-energy ion irradiation. Our simulations show that the optimum irradiation energy is 50 eV with substitution probabilities of 55% for N and 40% for B. We further estimate probabilities for different defect configurations to appear under B/N ion irradiation. We analyze the processes responsible for defect production and report an effective swift chemical sputtering mechanism for N irradiation at low energies (~125 eV) which leads to production of single vacancies. Our results show that ion irradiation is a promising method for creating hybrid C-B/N structures for future applications in the realm of nanoelectronics. △ Less

Submitted 3 February, 2011; originally announced February 2011.

Journal ref: Phys. Rev. B 83, 115424 (2011)

From Point Defects in Graphene to Two-Dimensional Amorphous Carbon

Authors: J. Kotakoski, A. V. Krasheninnikov, U. Kaiser, J. C. Meyer

Abstract: While crystalline two-dimensional materials have become an experimental reality during the past few years, an amorphous 2-D material has not been reported before. Here, using electron irradiation we create an sp2-hybridized one-atom-thick flat carbon membrane with a random arrangement of polygons, including four-membered carbon rings. We show how the transformation occurs step-by-step by nucleatio… ▽ More While crystalline two-dimensional materials have become an experimental reality during the past few years, an amorphous 2-D material has not been reported before. Here, using electron irradiation we create an sp2-hybridized one-atom-thick flat carbon membrane with a random arrangement of polygons, including four-membered carbon rings. We show how the transformation occurs step-by-step by nucleation and growth of low-energy multi-vacancy structures constructed of rotated hexagons and other polygons. Our observations, along with first-principles calculations, provide new insights to the bonding behavior of carbon and dynamics of defects in graphene. The created domains possess a band gap, which may open new possibilities for engineering graphene-based electronic devices. △ Less

Submitted 1 February, 2011; originally announced February 2011.

Comments: 10 pages, 10 figures including supplementary information

Journal ref: Phys. Rev. Lett., 106, 105505 (2011)

Sub-monolayers of carbon on alpha-iron facets: an ab-initio study

Authors: S. Riikonen, A. V. Krasheninnikov, R. M. Nieminen

Abstract: Motivated by recent in situ studies of carbon nanotube growth from large transition-metal nanoparticles, we study various alpha-iron (ferrite) facets at different carbon concentrations using ab initio methods. The studied (110), (100) and (111) facets show qualitatively different behaviour when carbon concentration changes. In particular, adsorbed carbon atoms repel each other on the (110) facet,… ▽ More Motivated by recent in situ studies of carbon nanotube growth from large transition-metal nanoparticles, we study various alpha-iron (ferrite) facets at different carbon concentrations using ab initio methods. The studied (110), (100) and (111) facets show qualitatively different behaviour when carbon concentration changes. In particular, adsorbed carbon atoms repel each other on the (110) facet, resulting in carbon dimer and graphitic material formation. Carbon on the (100) facet forms stable structures at concentrations of about 0.5 monolayer and at 1.0 monolayer this facet becomes unstable due to a frustration of the top layer iron atoms. The stability of the (111) facet is weakly affected by the amount of adsorbed carbon and its stability increases further with respect to the (100) facet with increasing carbon concentration. The exchange of carbon atoms between the surface and sub-surface regions on the (111) facet is easier than on the other facets and the formation of carbon dimers is exothermic. These findings are in accordance with a recent in situ experimental study where the existence of graphene decorated (111) facets is related to increased carbon concentration. △ Less

Submitted 16 June, 2010; originally announced June 2010.

Computational study of boron nitride nanotube synthesis: how catalyst morphology stabilizes the boron nitride bond

Authors: S. Riikonen, A. S. Foster, A. V. Krasheninnikov, R. M. Nieminen

Abstract: In an attempt to understand why catalytic methods for the growth of boron nitride nanotubes work much worse than for their carbon counterparts, we use first-principles calculations to study the energetics of elemental reactions forming N2, B2 and BN molecules on an iron catalyst. We observe that in the case of these small molecules, the catalytic activity is hindered by the formation of B2 on th… ▽ More In an attempt to understand why catalytic methods for the growth of boron nitride nanotubes work much worse than for their carbon counterparts, we use first-principles calculations to study the energetics of elemental reactions forming N2, B2 and BN molecules on an iron catalyst. We observe that in the case of these small molecules, the catalytic activity is hindered by the formation of B2 on the iron surface. We also observe that the local morphology of a step edge present in our nanoparticle model stabilizes the boron nitride molecule with respect to B2 due to the ability of the step edge to offer sites with different coordination simultaneously for nitrogen and boron. Our results emphasize the importance of atomic steps for a high yield chemical vapor deposition growth of BN nanotubes and may outline new directions for improving the efficiency of the method. △ Less

Submitted 2 September, 2009; originally announced September 2009.

Comments: submitted to physical review B

The effect of interstitial clusters and vacancies on the STM image of graphite

Authors: Arkady V. Krasheninnikov, Vladimir F. Elesin

Abstract: Making use of the tight-binding Green's function technique, we have calculated the STM images of graphite with surface and sub-surface defects, while taking into account the relaxation of the lattice due to defects. We have demonstrated that two different physical mechanisms may result in the formation of hillocks in the STM images: buckling of the graphite surface due to interstitials between t… ▽ More Making use of the tight-binding Green's function technique, we have calculated the STM images of graphite with surface and sub-surface defects, while taking into account the relaxation of the lattice due to defects. We have demonstrated that two different physical mechanisms may result in the formation of hillocks in the STM images: buckling of the graphite surface due to interstitials between the uppermost graphite layers and the enhancement of the electron density of states close to the Fermi energy on the carbon atoms in the vicinity of vacancies. Our results indicate that small hillocks may originate both from the interstitial clusters and from the vacancies. By contrast, however, large hillocks in excess of 10 Å~ in diameter can be caused only by interstitial clusters. △ Less

Submitted 29 October, 1999; originally announced October 1999.

Comments: Submitted to Surface Science

Temperature Effect on the Operation of Elementary Quantum-Dot Spin Gates by the Example of the NOT-AND Gate

Authors: A. V. Krasheninnikov, R. A. Koltsov

Abstract: The effect of temperature on the operation of the elementary quantum-dot spin gates for single-electron computing is studied theoretically within the framework of the Hubbard model by the example of the NOT-AND gate. The calculated values of the uniform external magnetic field necessary to realize the whole truth table proved to be unreasonably high for the implementation of the NOT-AND logical… ▽ More The effect of temperature on the operation of the elementary quantum-dot spin gates for single-electron computing is studied theoretically within the framework of the Hubbard model by the example of the NOT-AND gate. The calculated values of the uniform external magnetic field necessary to realize the whole truth table proved to be unreasonably high for the implementation of the NOT-AND logical function even at the liquid helium temperature. This result appears to be common to all spin gates. Thus, finite temperatures seem to be a serious obstacle for the practical realization of ground state calculations in quantum dot spin gates. △ Less

Submitted 26 October, 1998; originally announced October 1998.

Comments: 5 eps figures

Journal ref: Phys.Low-Dim.Struct. 9/10 180 (1998)