Stochastic 3D modeling of nanostructured NVP/C active material particles for sodium-ion batteries
Authors:
Matthias Neumann,
Tom Philipp,
Marcel Häringer,
Gregor Neusser,
Joachim R. Binder,
Christine Kranz
Abstract:
A data-driven modeling approach is presented to quantify the influence of morphology on effective properties in nanostructured sodium vanadium phosphate $\mathrm{Na}_3\mathrm{V}_2(\mathrm{PO}_4)_3$/ carbon composites (NVP/C), which are used as cathode material in sodium-ion batteries. This approach is based on the combination of advanced imaging techniques, experimental nanostructure characterizat…
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A data-driven modeling approach is presented to quantify the influence of morphology on effective properties in nanostructured sodium vanadium phosphate $\mathrm{Na}_3\mathrm{V}_2(\mathrm{PO}_4)_3$/ carbon composites (NVP/C), which are used as cathode material in sodium-ion batteries. This approach is based on the combination of advanced imaging techniques, experimental nanostructure characterization and stochastic modeling of the 3D nanostructure consisting of NVP, carbon and pores. By 3D imaging and subsequent post-processing involving image segmentation, the spatial distribution of NVP is resolved in 3D, and the spatial distribution of carbon and pores is resolved in 2D. Based on this information, a parametric stochastic model, specifically a Pluri-Gaussian model, is calibrated to the 3D morphology of the nanostructured NVP/C particles. Model validation is performed by comparing the nanostructure of simulated NVP/C composites with image data in terms of morphological descriptors which have not been used for model calibration. Finally, the stochastic model is used for predictive simulation to quantify the effect of varying the amount of carbon while kee** the amount of NVP constant. The presented methodology opens new possibilities for a ressource-efficient optimization of the morphology of NVP/C particles by modeling and simulation.
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Submitted 10 October, 2023;
originally announced October 2023.
Multiple intrinsically identical single photon emitters in the solid-state
Authors:
Lachlan J. Rogers,
Kay D. Jahnke,
T. Teraji,
Luca Marseglia,
Christoph. Müller,
Boris Naydenov,
Hardy Schauffert,
C. Kranz,
Junichi Isoya,
Liam P. McGuinness,
Fedor Jelezko
Abstract:
Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single photon emitters are also required. However typical solid-state single photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cav…
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Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single photon emitters are also required. However typical solid-state single photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here, we demonstrate bright silicon-vacancy (SiV-) centres in low-strain bulk diamond which intrinsically show spectral overlap of up to 91% and near transform-limited excitation linewidths. Our results have impact upon the application of single photon sources for quantum optics and cryptography, and the production of next generation fluorophores for bio-imaging.
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Submitted 5 June, 2014; v1 submitted 14 October, 2013;
originally announced October 2013.
