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Determining the depairing current in superconducting nanowire single-photon detectors
Authors:
S. Frasca,
B. Korzh,
M. Colangelo,
D. Zhu,
A. E. Lita,
J. P. Allmaras,
E. E. Wollman,
V. B. Verma,
A. E. Dane,
E. Ramirez,
A. D. Beyer,
S. W. Nam,
A. G. Kozorezov,
M. D. Shaw,
K. K. Berggren
Abstract:
We estimate the depairing current of superconducting nanowire single photon detectors (SNSPDs) by studying the dependence of the nanowires kinetic inductance on their bias current. The kinetic inductance is determined by measuring the resonance frequency of resonator style nanowire coplanar waveguides both in transmission and reflection configurations. Bias current dependent shifts in the measured…
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We estimate the depairing current of superconducting nanowire single photon detectors (SNSPDs) by studying the dependence of the nanowires kinetic inductance on their bias current. The kinetic inductance is determined by measuring the resonance frequency of resonator style nanowire coplanar waveguides both in transmission and reflection configurations. Bias current dependent shifts in the measured resonant frequency correspond to the change in the kinetic inductance, which can be compared with theoretical predictions. We demonstrate that the fast relaxation model described in the literature accurately matches our experimental data and provides a valuable tool for direct determination of the depairing current. Accurate and direct measurement of the depairing current is critical for nanowire quality analysis, as well as modeling efforts aimed at understanding the detection mechanism in SNSPDs.
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Submitted 18 April, 2019;
originally announced April 2019.
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An ultrahigh-impedance superconducting thermal switch for interfacing superconductors to semiconductors and optoelectronics
Authors:
A. N. McCaughan,
V. B. Verma,
S. Buckley,
J. P. Allmaras,
A. G. Kozorezov,
A. N. Tait,
S. W. Nam,
J. M. Shainline
Abstract:
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct…
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A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1 MΩ), and energy requirements (0.18 fJ/um^2, 3.24 mV/nW).
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Submitted 30 September, 2019; v1 submitted 25 March, 2019;
originally announced March 2019.
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Intrinsic timing jitter and latency in superconducting single photon nanowire detectors
Authors:
Jason P. Allmaras,
Alexander G. Kozorezov,
Boris A. Korzh,
Karl K. Berggren,
Matthew D. Shaw
Abstract:
We analyze the origin of the intrinsic timing jitter in superconducting nanowire single photon detectors (SNSPDs) in terms of fluctuations in the latency of the detector response, which is determined by the microscopic physics of the photon detection process. We demonstrate that fluctuations in the physical parameters which determine the latency give rise to the intrinsic timing jitter. We develop…
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We analyze the origin of the intrinsic timing jitter in superconducting nanowire single photon detectors (SNSPDs) in terms of fluctuations in the latency of the detector response, which is determined by the microscopic physics of the photon detection process. We demonstrate that fluctuations in the physical parameters which determine the latency give rise to the intrinsic timing jitter. We develop a general description of latency by introducing the explicit time dependence of the internal detection efficiency. By considering the dynamic Fano fluctuations together with static spatial inhomogeneities, we study the details of the connection between latency and timing jitter. We develop both a simple phenomenological model and a more general microscopic model of detector latency and timing jitter based on the solution of the generalized time-dependent Ginzburg-Landau equations for the 1D hotbelt geometry. While the analytical model is sufficient for qualitative interpretation of recent data, the general approach establishes the framework for a quantitative analysis of detector latency and the fundamental limits of intrinsic timing jitter. These theoretical advances can be used to interpret the results of recent experiments measuring the dependence of detection latency and timing jitter on photon energy to the few-picosecond level.
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Submitted 2 August, 2018; v1 submitted 30 April, 2018;
originally announced May 2018.
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Fano fluctuations in superconducting nanowire single-photon detectors
Authors:
A. G. Kozorezov,
C. Lambert,
F. Marsili,
M. J. Stevens,
V. B. Verma,
J. P. Allmaras,
M. D. Shaw,
R. P. Mirin,
Sae Woo Nam
Abstract:
Because of their universal nature, Fano fluctuations are expected to influence the response of superconducting nanowire single-photon detectors (SNSPDs). We predict that photon counting rate ($PCR$) as a function of bias current ($I_B$) in SNSPDs is described by an integral over a transverse coordinate-dependent complementary error function. The latter describes smearing of local responses due to…
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Because of their universal nature, Fano fluctuations are expected to influence the response of superconducting nanowire single-photon detectors (SNSPDs). We predict that photon counting rate ($PCR$) as a function of bias current ($I_B$) in SNSPDs is described by an integral over a transverse coordinate-dependent complementary error function. The latter describes smearing of local responses due to Fano fluctuations of the amount of energy deposited into electronic system. The finite width, $σ$, of the $PCR$ vs $I_B$ arises from fluctuations in the energy partition between quasiparticles and phonons during the energy down-conversion cascade. In narrow-nanowire SNSPDs the local responses are uniform, and the effect of Fano-fluctuations on $σ$ is dominant. In wide-nanowire SNSPDs with strong coordinate dependence of local responses due to vortex-antivortex unbinding and vortex entry from edges, Fano-fluctuations smear singularities imprinted by vorticity on the transition part of $PCR$ curve. We demonstrate good agreement between theory and experiments for a series of bath temperatures and photon energies in narrow-wire WSi SNSPDs. The time-resolved hotspot relaxation curves predicted by Fano fluctuations match the Lorentzian shapes observed in experiments over the whole range of bias currents investigated except for their tails.
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Submitted 9 February, 2017;
originally announced February 2017.
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Electron-phonon interaction in a superconductor with Kondo scattering
Authors:
A. G. Kozorezov,
A. A. Golubov,
J. K. Wigmore,
D. Martin,
P. Verhoeve,
R. A. Hijmering
Abstract:
In a superconductor with magnetic impurities, Kondo scattering results in the formation of localized states inside the superconducting gap. We show that inelastic electronic transitions involving quasiparticle scattering into and out of the localized states may result in significant changes in the non equilibrium properties of the superconductor. Using the model of Muller-Hartmann and Zittartz f…
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In a superconductor with magnetic impurities, Kondo scattering results in the formation of localized states inside the superconducting gap. We show that inelastic electronic transitions involving quasiparticle scattering into and out of the localized states may result in significant changes in the non equilibrium properties of the superconductor. Using the model of Muller-Hartmann and Zittartz for the extreme dilute limit, and including both deformation potential and spin-lattice coupling we have calculated the rates of such inelastic transitions between continuum and discrete states, and shown that they may greatly modify quasiparticle interactions. The individual processes are: quasiparticle trap** into discrete states, enhanced recombination with localized quasiparticles, and pair breaking and detrap** of localized quasiparticles by sub-gap phonons. We find that all these processes give rise to clearly distinguishable temperature dependences of the kinetic parameters.
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Submitted 9 April, 2008;
originally announced April 2008.
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Enhancement of photo-responsivity of small gap, multiple tunnelling superconducting tunnel junctions due to quasiparticle multiplication
Authors:
G. Brammertz,
A. G. Kozorezov,
R. den Hartog,
P. Verhoeve,
A. Peacock,
J. K. Wigmore,
D. Martin,
R. Venn
Abstract:
We recently predicted the formation of a highly non-equilibrium quasiparticle (qp) distribution in low TC multiple tunnelling superconducting tunnel junctions (STJs) [1]. The situation arises through qp energy gain in cycles of successive forward and back tunnelling events in the absence of relaxation via sub-gap phonon emission. The qps can acquire sufficient energy to emit phonons, which break…
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We recently predicted the formation of a highly non-equilibrium quasiparticle (qp) distribution in low TC multiple tunnelling superconducting tunnel junctions (STJs) [1]. The situation arises through qp energy gain in cycles of successive forward and back tunnelling events in the absence of relaxation via sub-gap phonon emission. The qps can acquire sufficient energy to emit phonons, which break more Cooper pairs and release additional qps. In this paper we report theoretical and experimental studies of the effect of this process on photon detection by such an STJ. We derived a set of energy-dependent balance equations [2], which describe the kinetics of the qps and phonons, including the qp multiplication process described above. Solution of the balance equations gives the non-equilibrium distribution of the qps as a function of time and energy, and hence the responsivity of the STJ as a function of bias voltage. We compared the theoretical results with experiments on high quality, multiple-tunnelling Al STJs cooled to 35mK in an adiabatic demagnetisation refrigerator, and illuminated with monochromatic photons with wavelengths between 250 and 1000 nm. It was found that in the larger junctions with the longest qp loss time, both responsivity and signal decay time increased rapidly with bias voltage. Excellent agreement was obtained between the observed effects and theoretical modelling.
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Submitted 13 July, 2004;
originally announced July 2004.
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Energy-dependent kinetic model of photon absorption by superconducting tunnel junctions
Authors:
G. Brammertz,
A. G. Kozorezov,
J. K. Wigmore,
R. den Hartog,
P. Verhoeve,
D. Martin,
A. Peacock,
A. A. Golubov,
H. Rogalla
Abstract:
We describe a model for photon absorption by superconducting tunnel junctions in which the full energy dependence of all the quasiparticle dynamic processes is included. The model supersedes the well-known Rothwarf-Taylor approach, which becomes inadequate for a description of the small gap structures that are currently being developed for improved detector resolution and responsivity. In these…
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We describe a model for photon absorption by superconducting tunnel junctions in which the full energy dependence of all the quasiparticle dynamic processes is included. The model supersedes the well-known Rothwarf-Taylor approach, which becomes inadequate for a description of the small gap structures that are currently being developed for improved detector resolution and responsivity. In these junctions relaxation of excited quasiparticles is intrinsically slow so that the energy distribution remains very broad throughout the whole detection process. By solving the energy-dependent kinetic equations describing the distributions, we are able to model the temporal and spectral evolution of the distribution of quasiparticles initially generated in the photo-absorption process. Good agreement is obtained between the theory and experiment.
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Submitted 13 July, 2004;
originally announced July 2004.
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Lattice-dynamics of a Disordered solid-solid Interface
Authors:
G. Fagas,
A. G. Kozorezov,
C. J. Lambert,
J. K. Wigmore,
A. Peacock,
A. Poelaert,
R. den Hartog
Abstract:
Generic properties of elastic phonon transport at a disordered interface are studied. The results show that phonon transmittance is a strong function of frequency and the disorder correlation length. At frequencies lower than the van Hove singularity the transmittance at a given frequency increases as the correlation length decreases. At low frequencies, this is reflected by different power-laws…
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Generic properties of elastic phonon transport at a disordered interface are studied. The results show that phonon transmittance is a strong function of frequency and the disorder correlation length. At frequencies lower than the van Hove singularity the transmittance at a given frequency increases as the correlation length decreases. At low frequencies, this is reflected by different power-laws for phonon conductance across correlated and uncorrelated disordered interfaces which are in approximate agreement with perturbation theory of an elastic continuum. These results can be understood in terms of simple mosaic and two-colour models of the interface.
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Submitted 31 March, 1999;
originally announced March 1999.
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Lattice-dynamical calculation of phonon scattering at a disordered interface
Authors:
G. Fagas,
A. G. Kozorezov,
C. J. Lambert,
J. K. Wigmore
Abstract:
For an fcc crystal with central force interactions and separately for a scalar model on a square lattice, we compute exactly the phonon transmission coefficient $T(ω)$ through a disordered planar interface between two identical semi - infinite leads. At high frequencies $T(ω)$ exhibits a strong frequency dependence which is determined by the correlation length of the disorder.
For an fcc crystal with central force interactions and separately for a scalar model on a square lattice, we compute exactly the phonon transmission coefficient $T(ω)$ through a disordered planar interface between two identical semi - infinite leads. At high frequencies $T(ω)$ exhibits a strong frequency dependence which is determined by the correlation length of the disorder.
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Submitted 3 August, 1998;
originally announced August 1998.
