Showing 1–30 of 30 results for author: Kozlov, D A

Spin Splitting and Disorder in HgTe-Based Massless Dirac Fermion Landau Levels

Authors: D. A. Kozlov, J. Ziegler, N. N. Mikhailov, Z. D. Kvon, D. Weiss

Abstract: An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose… ▽ More An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose strength grows monotonically with v. This behavior is consistent with calculations of the electron spectrum, which predicts a decrease in cyclotron gaps with increasing v. Oscillations with even filling factors, corresponding to spin gaps, behave less trivially. First, the SdH oscillations with filling factors of 4 and higher are resolved in a magnetic field that is 2-2.5 times smaller than the field required to resolve neighboring SdH oscillations with odd filling factors of 3 and higher. This indicates a significant increase in the size of the spin gap caused by an interface inversion asymmetry (IIA) leading to Dirac cone splitting in a zero magnetic field. Using the spin splitting value gamma as a fitting parameter, we obtained the best agreement between experimental data and calculations at gamma=1.5 meV. Next, spin splitting for the zeroth and first LLs is observed in 2-3 times stronger magnetic fields than for the other levels, indicating an increase in disorder near the Dirac point, due to the lack of screening. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 4 figures

Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers

Authors: M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon

Abstract: We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a… ▽ More We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a zero gap semiconductor. Nevertheless, since the bands inversion the two-dimensional (2D) topological surface states are still expected to exist. To check this claim we studied classical and quantum transport response of the system. We demonstrate that by tuning the top-gate voltage one can change the electron-dominating transport to the hole one. The highest electron mobility is found to be more than $300 \times 10^3$ cm$^2$/Vs. The system exhibits Shubnikov-de Haas (SdH) oscillations with a complicated pattern and shows up to 5 independent frequencies in corresponding Fourier spectra. They are attributed to the topological surface states, Volkov-Pankratov states and spin-degenerate bulk states in the accumulation layer near the gate. The observed peculiarities of the quantum transport are the strong SdH oscillations of the Hall resistance, and the suppressed oscillatory response of the topological surface states. △ Less

Submitted 8 February, 2023; originally announced February 2023.

Supercurrent interference in HgTe Josephson junctions

Authors: Wolfgang Himmler, Ralf Fischer, Michael Barth, Jacob Fuchs, Dmitry A. Kozlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Christoph Strunk, Cosimo Gorini, Klaus Richter, Dieter Weiss

Abstract: Wires made of topological insulators (TI) are a promising platform for searching for Majorana bound states. These states can be probed by analyzing the fractional ac Josephson effect in Josephson junctions with the TI wire as a weak link. An axial magnetic field can be used to tune the system from trivial to topologically nontrivial. Here we investigate the oscillations of the supercurrent in such… ▽ More Wires made of topological insulators (TI) are a promising platform for searching for Majorana bound states. These states can be probed by analyzing the fractional ac Josephson effect in Josephson junctions with the TI wire as a weak link. An axial magnetic field can be used to tune the system from trivial to topologically nontrivial. Here we investigate the oscillations of the supercurrent in such wire Josephson junctions as a function of the axial magnetic field strength and different contact transparencies. Although the current flows on average parallel to the magnetic field we observe $h/2e$, $h/4e$- and even $h/8e$-periodic oscillations of the supercurrent in samples with lower contact transparencies. Corresponding tight-binding transport simulations using a Bogoliubov-de Gennes model Hamiltonian yield the supercurrent through the Josephson junctions, showing in particular the peculiar $h/4e$-periodic oscillations observed in experiments. A further semiclassical analysis based on Andreev-reflected trajectories connecting the two superconductors allows us to identify the physical origin of these oscillations. They can be related to flux-enclosing paths winding around the TI-nanowire, thereby highlighting the three-dimensional character of the junction geometry compared to common planar junctions. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Quantum transport of Dirac fermions in HgTe gapless quantum wells

Authors: G. M. Gusev, A. D. Levin, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov

Abstract: We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, correspon… ▽ More We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge $ν=0$ state and bulk $ν\neq 0$ hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 6 pages, 5 figures

Journal ref: Nanomaterials, 12(12), 2047 (2022)

Scattering anisotropy in HgTe (013) quantum well

Authors: D. A. Khudaiberdiev, M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, Z. D. Kvon

Abstract: We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within t… ▽ More We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown. △ Less

Submitted 24 August, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 4 pages, 5 figures, published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 121, 083101 (2022);

Transport through the network of topological channels in HgTe based quantum well

Authors: G. M. Gusev, Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, M. V. Entin, N. N. Mikhailov

Abstract: Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulato… ▽ More Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulator or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe quantum wells near the Dirac point, where the conductance is determined by a percolation along the zero-gap lines. The experimental results confirm the presence of percolating conducting channels of a finite width. Our work establishes the critical width HgTe QW as a promising platform for the study of the interplay between topology and localization. △ Less

Submitted 30 November, 2021; originally announced November 2021.

Comments: 7 pages, 5 figures

Journal ref: 2D Mater. 9, 015021, 2022

$4π$-periodic supercurrent tuned by an axial magnetic flux in topological insulator nanowires

Authors: Ralf Fischer, Jordi Picó-Cortés, Wolfgang Himmler, Gloria Platero, Milena Grifoni, Dmitriy A. Kozlov, N. N. Mikhailov, Sergey A. Dvoretsky, Christoph Strunk, Dieter Weiss

Abstract: Topological insulator (TI) nanowires in proximity with conventional superconductors have been proposed as a tunable platform to realize topological superconductivity and Majorana zero modes (MZM). The tuning is done using an axial magnetic flux $Φ$ which allows transforming the system from trivial at $Φ=0$ to topologically nontrivial when half a magnetic flux quantum $Φ_0/2$ threads the wire's cro… ▽ More Topological insulator (TI) nanowires in proximity with conventional superconductors have been proposed as a tunable platform to realize topological superconductivity and Majorana zero modes (MZM). The tuning is done using an axial magnetic flux $Φ$ which allows transforming the system from trivial at $Φ=0$ to topologically nontrivial when half a magnetic flux quantum $Φ_0/2$ threads the wire's cross-section. Here we explore the expected topological transition in TI-wire-based Josephson junctions as a function of magnetic flux by probing the $4π$-periodic fraction of the supercurrent, which is considered as an indicator of topological superconductivity. Our data suggest that this $4π$-periodic supercurrent is at lower magnetic field largely of trivial origin, but that at magnetic fields above $\simΦ_{0}/4$ topological $4π$-periodic supercurrents take over. △ Less

Submitted 11 October, 2021; originally announced October 2021.

Topological insulators based on HgTe

Authors: Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility… ▽ More The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion. △ Less

Submitted 26 December, 2020; originally announced December 2020.

Comments: 18 pages, 24 figures

Journal ref: Physics - Uspekhi, 63(7) 629 - 647 (2020)

Weak antilocalization in partially relaxed 200-nm HgTe films

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain result… ▽ More The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Quantum Hall effect and Landau levels in the 3D topological insulator HgTe

Authors: Johannes Ziegler, Dmitriy A. Kozlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dieter Weiss

Abstract: We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute… ▽ More We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute to magnetotransport. Landau fan charts, map** the conductivity $ σ_{xx}(V_g, B) $ in the whole magnetic field - gate voltage range, can be divided into six areas, depending on the state of the participating carrier species. Key findings are: (i) the interplay of bulk holes (spin-degenerate) and Dirac surface electrons (non-degenerate), coexisting for $ E_F $ in the valence band, leads to a periodic switching between odd and even filling factors and thus odd and even quantized Hall voltage values. (ii) A similar though less pronounced behavior we found for coexisting Dirac surface and conduction band electrons. (iii) In the bulk gap, quantized Dirac electrons on the top-surface coexist at lower B with non-quantized ones on the bottom side, giving rise to quantum Hall plateau values depending - for a given filling factor - on the magnetic field strength. In stronger $ B $ fields, Landau level separation increases, charge transfer between different carrier species becomes energetically favorable and leads to the formation of a global (i.e. involving top and bottom surface) quantum Hall state. Simulations using the simplest possible theoretical approach are in line with the basic experimental findings, describing correctly the central features of the transitions from classical to quantum transport in the respective areas of our multicomponent charge carrier system. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. Research 2, 033003 (2020)

Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness

Authors: S. Hubmann, G. V. Budkin, M. Urban, V. V. Bel'kov, A. P. ~Dmitriev, J. Ziegler, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the… ▽ More We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $ω$ and momentum relaxation time $τ_{\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $ωτ\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $ω$. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

Authors: M. Otteneder, D. Sacré, I. Yahniuk, G. V. Budkin, K. Diendorfer, D. A. Kozlov, I. A. Dmitriev, N. N. Mikhailov, S. A. Dvoretsky, S. A. Tarasenko, V. V. Bel'kov, W. Knap, S. D. Ganichev

Abstract: We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case t… ▽ More We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states. △ Less

Submitted 13 January, 2020; originally announced January 2020.

Comments: 13 pages, 13 figures

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

Authors: S. Hubmann, G. V. Budkin, M. Otteneder, D. But, D. Sacré, I. Yahniuk, K. Diendorfer, V. V. Bel'kov, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, V. S. Varavin, V. G. Remesnik, S. A. Tarasenko, W. Knap, S. D. Ganichev

Abstract: We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende… ▽ More We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 11 pages, 7 figures

MSC Class: 78-05

Journal ref: Phys. Rev. Materials 4, 043607 (2020)

Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films

Authors: S. Candussio, G. V. Budkin, M. Otteneder, D. A. Kozlov, I. A. Dmitriev, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant… ▽ More We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. △ Less

Submitted 2 May, 2019; v1 submitted 8 February, 2019; originally announced February 2019.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 054205 (2019)

Two-dimension Dirac fermions system in CdHgTe quantum wells

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, B. A. Piot

Abstract: We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well… ▽ More We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well exhibits a massless Dirac fermions system with a quality slightly better then in conventional HgTe quantum wells of critical thickness. Second quantum well exhibits a high-quality two-dimensional topological insulator state with the energy gap of around 10 meV and well-defined edge transport making it as a good candidate for further study and applications of topological insulators. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: 5 pages, 5 figures

High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures

Authors: S. Hubmann, G. V. Budkin, A. P. Dmitriev, S. Gebert, V. V. Belkov, E. L. Ivchenko, S. Baumann, M. Otteneder, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show t… ▽ More We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency $ω=2πf$ is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7\,nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from $f=0.6$ to 1.07\,THz and intensities up to hundreds of kW/cm$^2$. We demonstrate that the probability of the impact ionization is proportional to the exponential function, $\exp(-E_0^2/E^2)$, of the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. The effect is observable in a wide temperature range from 4.2 to 90\,K, with the characteristic field increasing with rising temperature. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 085312 (2019)

Topological surface states in thick partially relaxed HgTe film

Authors: M. L. Savchenko, D. A. Kozlov, N. N. Vasilev, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, A. V. Kolesnikov

Abstract: Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films demonstrate a variety of subtle physical effects. The strain leads to a bulk band gap but limits a maximum HgTe strained film thickness, and therefore, the majority o… ▽ More Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films demonstrate a variety of subtle physical effects. The strain leads to a bulk band gap but limits a maximum HgTe strained film thickness, and therefore, the majority of experiments were performed on films with a thickness of less than 100 nm. Since a spatial separation of topological states is crucial for the study of a single-surface response, it is essential to increase the HgTe thickness further. In this work, by combining transport measurements together with capacitance spectroscopy, we perform an analysis of a 200-nm partially relaxed HgTe film. The Drude fit of the classical magnetotransport reveals the ambipolar electron-hole transport with a high electron mobility. A detailed analysis of Shubnikov-de Haas oscillations in both conductivity and capacitance allows us to distinguish three groups of electrons, identified as electrons on top and bottom surfaces and bulk electrons. The indirect bulk energy gap value is found to be close to zero. It is established that the significant gap decrease does not affect the surface states, which are found to be well resolved and spin nondegenerate. The presented techniques allow investigations of other three-dimensional TIs, regardless of the presence of bulk conductivity. △ Less

Submitted 14 May, 2019; v1 submitted 8 November, 2018; originally announced November 2018.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 99, 195423 (2019)

Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells

Authors: M. Otteneder, I. A. Dmitriev, S. Candussio, M. L. Savchenko, D. A. Kozlov, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other… ▽ More We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 98, 245304 (2018)

Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures

Authors: P. Faltermeier, G. V. Budkin, S. Hubmann, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-perio… ▽ More We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-periodic oscillations with an amplitude much larger than the photocurrent at zero magnetic field. Variation of gate voltages applied to individual grating gates of the DGG enables us to change the degree and the sign of the lateral asymmetry in a controllable way. The data reveal that the photocurrent reflects the degree of lateral asymmetry induced by different gate potentials. We show that the magnetic ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, which are sensitive to the corresponding polarization of the driving electromagnetic force. Theoretical analysis performed in the framework of semiclassical approach and taking into account Landau quantization describes the experimental results well. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Probing Spin Helical Surface States in Topological HgTe Nanowires

Authors: Johannes Ziegler, Raphael Kozlovsky, Cosimo Gorini, Ming-Hao Liu, Sabine Weishäupl, Hubert Maier, Ralf Fischer, Dmitriy A. Kozlov, Ze Don Kvon, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Klaus Richter, Dieter Weiss

Abstract: Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed p… ▽ More Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed preserve the topological nature of the surface states, that moreover extend phase-coherently across the entire wire geometry. The phase-coherence lengths are enhanced up to 5 $μ$m when tuning the wires into the bulk gap, so as to single out topological transport. The nanowires exhibit distinct conductance oscillations, both as a function of the flux due to an axial magnetic field, and of a gate voltage. The observed $h/e$-periodic Aharonov-Bohm-type modulations indicate surface-mediated quasi-ballistic transport. Furthermore, an in-depth analysis of the scaling of the observed gate-dependent conductance oscillations reveals the topological nature of these surface states. To this end we combined numerical tight-binding calculations of the quantum magneto-conductance with simulations of the electrostatics, accounting for the gate-induced inhomogenous charge carrier densities around the wires. We find that helical transport prevails even for strongly inhomogenous gating and is governed by flux-sensitive high-angular momentum surface states that extend around the entire wire circumference. △ Less

Submitted 11 December, 2017; v1 submitted 23 August, 2017; originally announced August 2017.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 97, 035157 (2018)

Robust helical edge transport at $ν=0$ quantum Hall state

Authors: G. M. Gusev, D. A. Kozlov, A. D. Levin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: Among the most interesting predictions in two-dimensional materials with a Dirac cone is the existence of the zeroth Landau level (LL), equally filled by electrons and holes with opposite chirality. The gapless edge states with helical spin structure emerge from Zeeman splitting at the LL filling factor $ν=0$ gapped quantum Hall state. We present observations of a giant nonlocal four-terminal tran… ▽ More Among the most interesting predictions in two-dimensional materials with a Dirac cone is the existence of the zeroth Landau level (LL), equally filled by electrons and holes with opposite chirality. The gapless edge states with helical spin structure emerge from Zeeman splitting at the LL filling factor $ν=0$ gapped quantum Hall state. We present observations of a giant nonlocal four-terminal transport in zero-gap HgTe quantum wells at the $ν=0$ quantum Hall state. Our experiment clearly demonstrates the existence of the robust helical edge state in a system with single valley Dirac cone materials. △ Less

Submitted 24 July, 2017; originally announced July 2017.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B,v.96, 045304, 2017

Magneto-resistance oscillations induced by high-intensity terahertz radiation

Authors: T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Bel'kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiment… ▽ More We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 96, 115449 (2017)

Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice

Authors: P. Faltermeier, G. V. Budkin, J. Unverzagt, S. Hubmann, A. Pfaller, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, V. V. Popov, D. V. Fateev, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurr… ▽ More We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 155442 (2017)

Photogalvanic probing of helical edge channels in 2D HgTe topological insulators

Authors: K. -M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. Baerenfaenger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in… ▽ More We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data. △ Less

Submitted 28 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 201103 (2017)

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

Authors: T. Herrmann, I. A. Dmitriev, D. A. Kozlov, M. Schneider, B. Jentzsch, Z. D. Kvon, P. Olbrich, V. V. Bel`kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced… ▽ More We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation. △ Less

Submitted 5 March, 2016; originally announced March 2016.

Probing quantum capacitance in a 3D topological insulator

Authors: D. A. Kozlov, D. Bauer, J. Ziegler, R. Fischer, M. L. Savchenko, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss

Abstract: We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe o… ▽ More We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy. △ Less

Submitted 2 November, 2015; originally announced November 2015.

Comments: 5 pages of the main text with 3 figures + 10 appendix pages with 7 figures

Journal ref: Phys. Rev. Lett. 116, 166802 (2016)

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

Authors: K. -M. Dantscher, D. A. Kozlov, P. Olbrich, C. Zoth, P. Faltermeier, M. Lindner, G. V. Budkin, S. A. Tarasenko, V. V. Belkov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss, B. Jenichen, S. D. Ganichev

Abstract: We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologicall… ▽ More We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band. △ Less

Submitted 24 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 165314 (2015)

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

Authors: C. Zoth, P. Olbrich, P. Vierling, K. -M. Dantscher, V. V. Bel'kov, M. A. Semina, M. M. Glazov, L. E. Golub, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a… ▽ More We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect. △ Less

Submitted 7 July, 2014; v1 submitted 4 July, 2014; originally announced July 2014.

Comments: 16 pages, 13 figures

Transport properties of a 3D topological insulator based on a strained high mobility HgTe film

Authors: D. A. Kozlov, Z. D. Kvon, D. Weiss, E. B. Olshanetsky, N. N. Mikhailov, S. A. Dvoretsky

Abstract: We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electro… ▽ More We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states. △ Less

Submitted 4 December, 2013; v1 submitted 14 June, 2013; originally announced June 2013.

Comments: 11 pages (4 pages of main text, 6 pages of supplemental materials), 8 figures

Giant spin-polarized current in a Dirac fermion system at cyclotron resonance

Authors: P. Olbrich, C. Zoth, P. Vierling, K. -M. Dantscher, G. V. Budkin, S. A. Tarasenko, V. V. Bel'kov, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic field… ▽ More We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation. △ Less

Submitted 19 January, 2013; originally announced January 2013.

Comments: 5 pages with 5 figures + 3 pages of supplementary material with 1 figure