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Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states
Authors:
Xeniya Kozina,
Carlos Eduardo Viol Barbosa,
Julie Karel,
Siham Ouardi,
Masafumi Yamamoto,
Keisuke Kobayashi,
Gerd Schonhense,
Gerhard H. Fecher,
Claudia Felser,
Eiji Ikenaga
Abstract:
A novel design of high-voltage compatible polarimeter for spin-resolved hard x-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. Its special feature is that it can be operated at a high negati…
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A novel design of high-voltage compatible polarimeter for spin-resolved hard x-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. Its special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. The exit plane of the analyzer contains a delay-line detector (20 mm dia.) for conventional multichannel intensity spectroscopy simultaneously with single-channel spin analysis. The performance of the combined setup is demonstrated by the first spin-resolved data for the valence-region of a FeCo functional layer of a tunneling device, buried beneath 3 nm of oxidic material. The well-structured spin polarization spectrum validates Spin-HAXPES in the valence energy range as powerful method for bulk electronic structure analysis. The spin polarization spectrum exhibits a rich structure, originating from clearly discernible transitions in the majority and minority partial spin spectra.
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Submitted 3 June, 2015;
originally announced June 2015.
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Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions
Authors:
C. E. ViolBarbosa,
S. Ouardi,
T. Kubota,
S. Mizukami,
G. H. Fecher,
T. Miyazaki,
X. Kozina,
E. Ikenaga,
C. Felser
Abstract:
The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization proper…
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The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.
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Submitted 9 May, 2014; v1 submitted 14 March, 2014;
originally announced March 2014.
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Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films
Authors:
Siham Ouardi,
Gerhard H. Fecher,
Stanislav Chadov,
Claudia Felser,
Benjamin Balke,
Xenia Kozina,
Tomoyuki Taira,
Masafumi Yamamoto
Abstract:
Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometric Co2-based Heusler alloy shows a intense dependency of the tunnel magnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratios of up to 1995% at 4.2 K for 1. This work reports on the electronic structure of non-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x : z = 2 : 0.38. The electronic str…
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Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometric Co2-based Heusler alloy shows a intense dependency of the tunnel magnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratios of up to 1995% at 4.2 K for 1. This work reports on the electronic structure of non-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x : z = 2 : 0.38. The electronic structure was investigated by high energy, hard X-ray photoelectron spectroscopy combined with first-principles calculations. The high-resolution measurements of the valence band of the non-stoichiometric CoxMnyGez films close to the Fermi energy indicate a shift of the spectral weight compared to bulk Co2MnGe. This is in agreement with the changes in the density of states predicted by the calculations. Furthermore it is shown that the co-sputtering of Co2MnGe together with additional Mn is an appropriate technique to adjust the stoichiometry of the CoxMnyGez film composition. The resulting changes of the electronic structure within the valence band will allow to tune the magnetoresistive characteristics of CoxMnyGez based tunnel junctions as verified by the calculations and photoemission experiments.
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Submitted 29 September, 2012;
originally announced October 2012.
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Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy
Authors:
Xeniya Kozina,
Tino Jaeger,
Siham Ouardi,
Andrei Gloskowskij,
Gregory Stryganyuk,
Gerhard Jakob,
Takeharu Sugiyama,
Eiji Ikenaga,
Gerhard H. Fecher,
Claudia Felser
Abstract:
The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-ga…
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The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-gap"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.
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Submitted 3 November, 2011;
originally announced November 2011.
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Magnetic dichroism in angular-resolved hard X-ray photoelectron spectroscopy from buried layers
Authors:
Xeniya Kozina,
Gerhard H. Fecher,
Gregory Stryganyuk,
Siham Ouardi,
Benjamin Balke,
Claudia Felser,
Gerd Schoenhense,
Eiji Ikenaga,
Takeharu Sugiyama,
Naomi Kawamura,
Motohiro Suzuki,
Tomoyuki Taira,
Tetsuya Uemura,
Masafumi Yamamoto,
Hiroaki Sukegawa,
Wenhong Wang,
Koichiro Inomata,
Keisuke Kobayashi
Abstract:
This work reports the measurement of magnetic dichroism in angular-resolved photoemission from in-plane magnetized buried thin films. The high bulk sensitivity of hard X-ray photoelectron spectroscopy (HAXPES) in combination with circularly polarized radiation enables the investigation of the magnetic properties of buried layers. HAXPES experiments with an excitation energy of 8 keV were performed…
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This work reports the measurement of magnetic dichroism in angular-resolved photoemission from in-plane magnetized buried thin films. The high bulk sensitivity of hard X-ray photoelectron spectroscopy (HAXPES) in combination with circularly polarized radiation enables the investigation of the magnetic properties of buried layers. HAXPES experiments with an excitation energy of 8 keV were performed on exchange-biased magnetic layers covered by thin oxide films. Two types of structures were investigated with the IrMn exchange-biasing layer either above or below the ferromagnetic layer: one with a CoFe layer on top and another with a Co$_2$FeAl layer buried beneath the IrMn layer. A pronounced magnetic dichroism is found in the Co and Fe $2p$ states of both materials. The localization of the magnetic moments at the Fe site conditioning the peculiar characteristics of the Co$_2$FeAl Heusler compound, predicted to be a half-metallic ferromagnet, is revealed from the magnetic dichroism detected in the Fe $2p$ states.
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Submitted 24 June, 2011;
originally announced June 2011.
