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Overflow of a dipolar exciton trap at high magnetic fields
Authors:
S. Dietl,
K. Kowalik-Seidl,
D. Schuh,
W. Wegscheider,
A. W. Holleitner,
U. Wurstbauer
Abstract:
We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic sh…
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We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic shift. At intermediate fields, magnetic field dependent correction terms apply which follow the characteristics of a neutral magnetoexciton. Due to a combined effect of an increasing binding energy and lifetime, the exciton density is roughly doubled from zero to about seven Tesla. At the latter high field value, the charge carriers occupy only the lowest Landau level. In this situation, the exciton trap can overflow independently from the electrostatic depth of the trap** potential, and the energy shift of the excitons caused by the so-called quantum confined Stark effect is effectively compensated. Instead, the exciton energetics seem to be driven by the magnetic field dependent renormalization of the many-body interaction terms. In this regime, the impact of parasitic in-plane fields at the edge of trap** potential is eliminated.
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Submitted 16 November, 2016;
originally announced November 2016.
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Forming and confining of dipolar excitons by quantizing magnetic fields
Authors:
K. Kowalik-Seidl,
X. P. Vögele,
F. Seilmeier,
D. Schuh,
W. Wegscheider,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illumin…
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We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures.
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Submitted 16 February, 2011; v1 submitted 2 September, 2010;
originally announced September 2010.
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Long exciton spin memory in coupled quantum wells
Authors:
Katarzyna Kowalik-Seidl,
Xaver P. Vögele,
Bernhard N. Rimpfl,
Stephan Manus,
Dieter Schuh,
Werner Wegscheider,
Alexander W. Holleitner,
Jörg P. Kotthaus
Abstract:
Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, de…
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Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons.
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Submitted 16 July, 2010; v1 submitted 1 April, 2010;
originally announced April 2010.
