Showing 1–11 of 11 results for author: Kovalyuk, Z D

Terahertz control of photoluminescence emission in few-layer InSe

Authors: Tommaso Venanzi, Malte Selig, Alexej Pashkin, Stephan Winnerl, Manuel Katzer, Himani Arora, Artur Erbe, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Leonetta Baldassarre, Andreas Knorr, Manfred Helm, Harald Schneider

Abstract: A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recove… ▽ More A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Tunable spin-orbit coupling in two-dimensional InSe

Authors: A. Ceferino, S. J. Magorrian, V. Zólyomi, D. A. Bandurin, A. K. Geim, A. Patanè, Z. D. Kovalyuk, Z. R. Kudrynskyi, I. V. Grigorieva, V. I. Fal'ko

Abstract: We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding… ▽ More We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment. △ Less

Submitted 8 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 125432 (2021)

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

Authors: M. Osiekowicz, D. Staszczuk, K. Olkowska-Pucko, Ł. Kipczak, M. Grzeszczyk, M. Zinkiewicz, K. Nogajewski, Z. R. Kudrynskyi, Z. D. Kovalyuk, A. Patané, A. Babiński, M. R. Molas

Abstract: The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under th… ▽ More The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 K and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the \mbox{so-called} B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone △ Less

Submitted 24 October, 2020; originally announced October 2020.

Comments: 7 pages, 6 figures

Journal ref: Scientific Reports 11, 924 (2021)

Photoluminescence dynamics in few-layer InSe

Authors: Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zalhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, Harald Schneider

Abstract: We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguish… ▽ More We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations. △ Less

Submitted 31 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: The manuscript will be published in the journal Physical Review Materials. Copyright 2011 by American Physical Society (https://journals.aps.org/prmaterials/)

Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Authors: Quanshan Lv, Faguang Yan, Nobuya Mori, Wenkai Zhu, Ce Hu, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Kaiyou Wang

Abstract: Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW… ▽ More Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. Here, we demonstrate TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics: forward rectifying, Zener-tunneling and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ~ 0.2V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Authors: Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak, Daniil Domaretskiy, Viktor Zólyomi, Daniel Terry, James Howarth, Ignacio Gutiérrez-Lezama, Alexander Zhukov, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Vladimir I. Fal'ko, Alberto F. Morpurgo

Abstract: Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app… ▽ More Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 21 December, 2019; originally announced December 2019.

Journal ref: Nature Materials (2020)

Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials

Authors: Vishnu Sreepal, Mehmet Yagmurcukardes, Kalangi S. Vasu, Daniel J. Kelly, Sarah F. R. Taylor, Vasyl G. Kravets, Zakhar Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Alexander N. Grigorenko, Sarah J. Haigh, Christopher Hardacre, Laurence Eaves, Hasan Sahin, Andre K. Geim, Francois M. Peeters, Rahul R. Nair

Abstract: Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical… ▽ More Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we use 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF3), which has a non-layered, rhombohedral structure and therefore cannot be possibly obtained by exfoliation. The conversion of InSe into InF3 is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF3 layers are doped with selenium. We study this new 2D material by optical, electron transport and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation into InF3 films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently-bonded non-cleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Nano Lett.2019, 19, 6475, 2019

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

Authors: Yong** Lee, Riccardo Pisoni, Hiske Overweg, Marius Eich, Peter Rickhaus, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar. D. Kovalyuk, Roman Gorbachev, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin

Abstract: In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measureme… ▽ More In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot. △ Less

Submitted 28 May, 2018; originally announced May 2018.

Comments: 11 pages, 4 figures

Journal ref: 2D Mater. 5 035040,2018

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Authors: Matthew Hamer, Endre Tóvári, Mengjian Zhu, Michael D. Thompson, Alexander Mayorov, Jonathon Prance, Yong** Lee, Richard P. Haley, Zakhar R. Kudrynskyi, Amalia Patanè, Daniel Terry, Zakhar D. Kovalyuk, Klaus Ensslin, Andrey V. Kretinin, Andre Geim, Roman Gorbachev

Abstract: Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gati… ▽ More Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Comments: 13 pages, 3 figures

Journal ref: Nano Lett., 2018, 18 (6), p 3950

Characterization, optical properties and electron(exciton)-phonon interaction in bulk In2Se3 crystals and InSe nanocrystals in In2nSe3 confinement

Authors: Yu. I. Zhirko, V. M. Grekhov, Z. D. Kovalyuk

Abstract: Complex electron-microscopic, energy-dispersed and wide-temperature optical absorption and photoluminescence (PL) investigations are carried out into Bridgeman-grown layered In2Se3 crystals. It is shown that In2Se3 crystals as a whole have a homogeneous concentration of In and Se atoms, corresponding with In2Se3 stoichiometry. Nevertheless, In2Se3 crystals contain a significant amount of dislocati… ▽ More Complex electron-microscopic, energy-dispersed and wide-temperature optical absorption and photoluminescence (PL) investigations are carried out into Bridgeman-grown layered In2Se3 crystals. It is shown that In2Se3 crystals as a whole have a homogeneous concentration of In and Se atoms, corresponding with In2Se3 stoichiometry. Nevertheless, In2Se3 crystals contain a significant amount of dislocations, on which nano-sized interspersions of crystal phases of pure InSe, In6Se7 and monoclinic red Se settle down. Optical wide-temperature investigations of In2Se3 allow us to do the following: establish the width of the band-gap, the exciton binding energy; determine the frequency of a half-layer A-phonon, which takes part in electron (exciton)-phonon interaction; and to evaluate the effective masses of carriers and the dielectric permeability. Finally, blue shift of the band-gap and character of the electron (exciton)-phonon interaction of nano-sized 3D InSe crystals confined in an In2Se3 crystal matrix; influence of an InSe nanocrystal radius and of an ensemble of 3D InSe nanocrystals with different radii for an increase of the exciton emission/absorption half-width line with temperature and radii of InSe nanocrystals are discussed. △ Less

Submitted 8 February, 2018; originally announced February 2018.

Comments: 15 pages, 11 figures

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

Authors: D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. Krishna Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim, Y. Cao

Abstract: A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexag… ▽ More A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Journal ref: Nature Nanotechnology 12, 223-227 (2016)