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Observation of 2e-periodic Supercurrents in Nanowire Single-Cooper-Pair Transistors
Authors:
Jasper van Veen,
Alex Proutski,
Torsten Karzig,
Dmitry I. Pikulin,
Roman M. Lutchyn,
Jesper Nygård,
Peter Krogstrup,
Attila Geresdi,
Leo P. Kouwenhoven,
John D. Watson
Abstract:
Parity control of superconducting islands hosting Majorana zero modes (MZMs) is required to operate topological qubits made from proximitized semiconductor nanowires. We, therefore, study parity effects in hybrid InAs-Al single-Cooper-pair transistors (SCPTs) as a first step. In particular, we investigate the gate-charge supercurrent modulation and observe a consistent 2$e$-periodic pattern indica…
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Parity control of superconducting islands hosting Majorana zero modes (MZMs) is required to operate topological qubits made from proximitized semiconductor nanowires. We, therefore, study parity effects in hybrid InAs-Al single-Cooper-pair transistors (SCPTs) as a first step. In particular, we investigate the gate-charge supercurrent modulation and observe a consistent 2$e$-periodic pattern indicating a general lack of low-energy subgap states in these nanowires at zero magnetic field. In a parallel magnetic field, an even-odd pattern develops with a gate-charge spacing that oscillates as a function of field demonstrating that the modulation pattern is sensitive to the presence of a single subgap state. In addition, we find that the parity lifetime of the SCPT decreases exponentially with magnetic field as the subgap state approaches zero energy. Our work highlights the important role that intentional quasiparticle traps and superconducting gap engineering would play in topological qubits that require quenching of the island charge dispersion.
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Submitted 25 May, 2018;
originally announced May 2018.
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Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands
Authors:
Jie Shen,
Sebastian Heedt,
Francesco Borsoi,
Bernard Van Heck,
Sasa Gazibegovic,
Roy L. M. Op het Veld,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Senja J. J. Ramakers,
Guanzhong Wang,
Di Xu,
Daniel Bouman,
Attila Geresdi,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we stu…
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The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS,and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e. compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes.
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Submitted 5 November, 2018; v1 submitted 9 April, 2018;
originally announced April 2018.
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Field effect enhancement in buffered quantum nanowire networks
Authors:
Filip Krizek,
Joachim E. Sestoft,
Pavel Aseev,
Sara Marti-Sanchez,
Saulius Vaitiekenas,
Lucas Casparis,
Sabbir A. Khan,
Yu Liu,
Tomas Stankevic,
Alexander M. Whiticar,
Alexandra Fursina,
Frenk Boekhout,
Rene Koops,
Emanuele Uccelli,
Leo P. Kouwenhoven,
Charles M. Marcus,
Jordi Arbiol,
Peter Krogstrup
Abstract:
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geomet…
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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
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Submitted 5 April, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Observation of the 4$π$-periodic Josephson effect in indium arsenide nanowires
Authors:
Dominique Laroche,
Daniël Bouman,
David J. van Woerkom,
Alex Proutski,
Chaitanya Murthy,
Dmitry I. Pikulin,
Chetan Nayak,
Ruben J. J. van Gulik,
Jesper Nygård,
Peter Krogstrup,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum informa…
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Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum information stored in the MZM. As a next step towards topological quantum computation, charge parity conserving experiments based on the Josephson effect are required, which can also help exclude suggested non-topological origins of the zero bias conductance anomaly. Here we report the direct measurement of the Josephson radiation frequency in InAs nanowires with epitaxial aluminium shells. For the first time, we observe the $4π$-periodic Josephson effect above a magnetic field of $\approx 200\,$mT, consistent with the estimated and measured topological phase transition of similar devices.
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Submitted 4 March, 2020; v1 submitted 22 December, 2017;
originally announced December 2017.
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Quantized Majorana conductance
Authors:
Hao Zhang,
Chun-Xiao Liu,
Sasa Gazibegovic,
Di Xu,
John A. Logan,
Guanzhong Wang,
Nick van Loo,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua…
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Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments.
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Submitted 29 October, 2017;
originally announced October 2017.
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$h/e$ superconducting quantum interference through trivial edge states in InAs
Authors:
Folkert K. de Vries,
Tom Timmerman,
Viacheslav P. Ostroukh,
Jasper van Veen,
Arjan J. A. Beukman,
Fanming Qu,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID…
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Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.
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Submitted 18 September, 2017; v1 submitted 12 September, 2017;
originally announced September 2017.
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Realizing Majorana zero modes in superconductor-semiconductor heterostructures
Authors:
R. M. Lutchyn,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
P. Krogstrup,
C. M. Marcus,
Y. Oreg
Abstract:
Realizing topological superconductivity and Majorana zero modes in the laboratory is one of the major goals in condensed matter physics. We review the current status of this rapidly-develo** field, focusing on semiconductor-superconductor proposals for topological superconductivity. Material science progress and robust signatures of Majorana zero modes in recent experiments are discussed. After…
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Realizing topological superconductivity and Majorana zero modes in the laboratory is one of the major goals in condensed matter physics. We review the current status of this rapidly-develo** field, focusing on semiconductor-superconductor proposals for topological superconductivity. Material science progress and robust signatures of Majorana zero modes in recent experiments are discussed. After a brief introduction to the subject, we outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation in these systems.
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Submitted 24 February, 2018; v1 submitted 16 July, 2017;
originally announced July 2017.
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Ballistic superconductivity in semiconductor nanowires
Authors:
Hao Zhang,
Önder Gül,
Sonia Conesa-Boj,
Michał P. Nowak,
Michael Wimmer,
Kun Zuo,
Vincent Mourik,
Folkert K. de Vries,
Jasper van Veen,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
David J. van Woerkom,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Marina Quintero-Pérez,
Maja C. Cassidy,
Sebastian Koelling,
Srijit Goswami,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brou…
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Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.
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Submitted 10 July, 2017;
originally announced July 2017.
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Supercurrent interference in few-mode nanowire Josephson junctions
Authors:
Kun Zuo,
Vincent Mourik,
Daniel B. Szombati,
Bas Nijholt,
David J. van Woerkom,
Attila Geresdi,
Jun Chen,
Viacheslav P. Ostroukh,
Anton R. Akhmerov,
Sebastién R. Plissard,
Diana Car,
Erik P. A. M. Bakkers,
Dmitry I. Pikulin,
Leo P. Kouwenhoven,
Sergey M. Frolov
Abstract:
Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical cu…
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Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical current on magnetic field exhibits gate-tunable nodes. Based on a realistic numerical model we conclude that the Zeeman effect induced by the magnetic field and the spin-orbit interaction in the nanowire are insufficient to explain the observed evolution of the Josephson effect. We find the interference between the few occupied one-dimensional modes in the nanowire to be the dominant mechanism responsible for the critical current behavior. The suppression and non-monotonic evolution of critical currents at finite magnetic field should be taken into account when designing circuits based on Majorana bound states.
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Submitted 5 November, 2017; v1 submitted 11 June, 2017;
originally announced June 2017.
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Epitaxy of Advanced Nanowire Quantum Devices
Authors:
Sasa Gazibegovic,
Diana Car,
Hao Zhang,
Stijn C. Balk,
John A. Logan,
Michiel W. A. de Moor,
Maja C. Cassidy,
Rudi Schmits,
Di Xu,
Guanzhong Wang,
Peter Krogstrup,
Roy L. M. Op het Veld,
Jie Shen,
Daniël Bouman,
Borzoyeh Shojaei,
Daniel Pennachio,
Joon Sue Lee,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Leo P. Kouwenhoven,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers
Abstract:
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exc…
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Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.
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Submitted 10 December, 2021; v1 submitted 3 May, 2017;
originally announced May 2017.
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Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
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Submitted 11 April, 2017;
originally announced April 2017.
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Demonstration of an ac Josephson junction laser
Authors:
M. C. Cassidy,
A. Bruno,
S. Rubbert,
M. Irfan,
J. Kammhuber,
R. N. Schouten,
A. R. Akhmerov,
L. P. Kouwenhoven
Abstract:
Superconducting electronic devices have re-emerged as contenders for both classical and quantum computing due to their fast operation speeds, low dissipation and long coherence times. An ultimate demonstration of coherence is lasing. We use one of the fundamental aspects of superconductivity, the ac Josephson effect, to demonstrate a laser made from a Josephson junction strongly coupled to a multi…
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Superconducting electronic devices have re-emerged as contenders for both classical and quantum computing due to their fast operation speeds, low dissipation and long coherence times. An ultimate demonstration of coherence is lasing. We use one of the fundamental aspects of superconductivity, the ac Josephson effect, to demonstrate a laser made from a Josephson junction strongly coupled to a multi-mode superconducting cavity. A dc voltage bias to the junction provides a source of microwave photons, while the circuit's nonlinearity allows for efficient down-conversion of higher order Josephson frequencies down to the cavity's fundamental mode. The simple fabrication and operation allows for easy integration with a range of quantum devices, allowing for efficient on-chip generation of coherent microwave photons at low temperatures.
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Submitted 15 March, 2017;
originally announced March 2017.
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Observation of Conductance Quantization in InSb Nanowire Networks
Authors:
Elham M. T. Fadaly,
Hao Zhang,
Sonia Conesa-Boj,
Diana Car,
Önder Gül,
Sébastien R. Plissard,
Roy L. M. Op het Veld,
Sebastian Kölling,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a…
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Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior.
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Submitted 12 July, 2021; v1 submitted 15 March, 2017;
originally announced March 2017.
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Josephson radiation and shot noise of a semiconductor nanowire junction
Authors:
David J. van Woerkom,
Alex Proutski,
Ruben J. J. van Gulik,
Tamás Kriváchy,
Diana Car,
Sèbastian R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$…
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We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$ with a cutoff frequency of $f_0=33.1\,$GHz. We extract a circuit coupling efficiency of $η\approx 0.1$ and a detector quantum efficiency approaching unity in the high frequency limit. In addition to the Josephson radiation, we identify a shot-noise contribution with a Fano factor $F\approx1$, consistently with the presence of single electron states in the nanowire channel.
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Submitted 21 October, 2017; v1 submitted 9 February, 2017;
originally announced February 2017.
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Hard superconducting gap in InSb nanowires
Authors:
Önder Gül,
Hao Zhang,
Folkert K. de Vries,
Jasper van Veen,
Kun Zuo,
Vincent Mourik,
Sonia Conesa-Boj,
Michał P. Nowak,
David J. van Woerkom,
Marina Quintero-Pérez,
Maja C. Cassidy,
Attila Geresdi,
Sebastian Koelling,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material system…
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Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation.
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Submitted 10 April, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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Conductance through a helical state in an InSb nanowire
Authors:
Jakob Kammhuber,
Maja C Cassidy,
Fei Pei,
Michal P Nowak,
Adriaan Vuik,
Diana Car,
Sèbastien R Plissard,
Erik P A M Bakkers,
Michael Wimmer,
Leo P Kouwenhoven
Abstract:
The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for…
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The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here we report electrical conductance measurements of a quantum point contact (QPC) formed in an indium antimonide nanowire as a function of magnetic field. At magnetic fields exceeding 3T, the $2e^2/h$ plateau shows a reentrant conductance feature towards $1e^2/h$ which increases linearly in width with magnetic field before envelo** the $1e^2/h$ plateau. Rotating the external magnetic field either parallel or perpendicular to the spin-orbit field allows us to clearly attribute this experimental signature to SOI. We compare our observations with a model of a QPC incorporating SOI and extract a spin-orbit energy of ~6.5meV, which is significantly stronger than the SO energy obtained by other methods.
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Submitted 24 January, 2017;
originally announced January 2017.
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InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Authors:
Diana Car,
Sonia Conesa-Boj,
Hao Zhang,
Roy L. M. Op het Veld,
Michiel W. A. de Moor,
Elham M. T. Fadaly,
Önder Gül,
Sebastian Kölling,
Sebastien R. Plissard,
Vigdis Toresen,
Michael T. Wimmer,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and…
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Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.
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Submitted 12 July, 2021; v1 submitted 17 November, 2016;
originally announced November 2016.
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Microwave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctions
Authors:
David J. van Woerkom,
Alex Proutski,
Bernard van Heck,
Daniël Bouman,
Jukka I. Väyrynen,
Leonid I. Glazman,
Peter Krogstrup,
Jesper Nygård,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
The superconducting proximity effect in semiconductor nanowires has recently enabled the study of new superconducting architectures, such as gate-tunable superconducting qubits and multiterminal Josephson junctions. As opposed to their metallic counterparts, the electron density in semiconductor nanosystems is tunable by external electrostatic gates providing a highly scalable and in-situ variatio…
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The superconducting proximity effect in semiconductor nanowires has recently enabled the study of new superconducting architectures, such as gate-tunable superconducting qubits and multiterminal Josephson junctions. As opposed to their metallic counterparts, the electron density in semiconductor nanosystems is tunable by external electrostatic gates providing a highly scalable and in-situ variation of the device properties. In addition, semiconductors with large $g$-factor and spin-orbit coupling have been shown to give rise to exotic phenomena in superconductivity, such as $\varphi_0$ Josephson junctions and the emergence of Majorana bound states. Here, we report microwave spectroscopy measurements that directly reveal the presence of Andreev bound states (ABS) in ballistic semiconductor channels. We show that the measured ABS spectra are the result of transport channels with gate-tunable, high transmission probabilities up to $0.9$, which is required for gate-tunable Andreev qubits and beneficial for braiding schemes of Majorana states. For the first time, we detect excitations of a spin-split pair of ABS and observe symmetry-broken ABS, a direct consequence of the spin-orbit coupling in the semiconductor.
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Submitted 21 October, 2017; v1 submitted 1 September, 2016;
originally announced September 2016.
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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Authors:
Fanming Qu,
Jasper van Veen,
Folkert K. de Vries,
Arjan J. A. Beukman,
Michael Wimmer,
Wei Yi,
Andrey A. Kiselev,
Binh-Minh Nguyen,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum w…
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Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
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Submitted 18 August, 2016;
originally announced August 2016.
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A non-invasive method for nanoscale electrostatic gating of pristine materials
Authors:
Arjan J. A. Beukman,
Fanming Qu,
Ken W. West,
Loren N. Pfeiffer,
Leo P. Kouwenhoven
Abstract:
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanow…
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Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nano-processing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-Pérot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material.
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Submitted 18 August, 2016;
originally announced August 2016.
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A road to reality with topological superconductors
Authors:
C. W. J. Beenakker,
L. P. Kouwenhoven
Abstract:
Topological states of matter are a source of low-energy quasiparticles, bound to a defect or propagating along the surface. In a superconductor these are Majorana fermions, described by a real rather than a complex wave function. The absence of complex phase factors promises protection against decoherence in quantum computations based on topological superconductivity. This is a tutorial style intr…
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Topological states of matter are a source of low-energy quasiparticles, bound to a defect or propagating along the surface. In a superconductor these are Majorana fermions, described by a real rather than a complex wave function. The absence of complex phase factors promises protection against decoherence in quantum computations based on topological superconductivity. This is a tutorial style introduction written for a Nature Physics focus issue on topological matter.
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Submitted 30 June, 2016;
originally announced June 2016.
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Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Authors:
Binh-Minh Nguyen,
Andrey A. Kiselev,
Ramsey Noah,
Wei Yi,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Morten Kjaergaard,
Henri J. Suominen,
Fabrizio Nichele,
Charles M. Marcus,
Michael J. Manfra,
Marko Sokolich
Abstract:
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance f…
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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.
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Submitted 16 May, 2016;
originally announced May 2016.
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Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Authors:
Fabrizio Nichele,
Morten Kjaergaard,
Henri J. Suominen,
Rafal Skolasinski,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Fanming Qu,
Arjan J. A. Beukman,
Leo P. Kouwenhoven,
Charles M. Marcus
Abstract:
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like state…
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Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
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Submitted 24 November, 2016; v1 submitted 4 May, 2016;
originally announced May 2016.
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Ballistic Majorana nanowire devices
Authors:
Önder Gül,
Hao Zhang,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Attila Geresdi,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energ…
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Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential.
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Submitted 26 April, 2021; v1 submitted 13 March, 2016;
originally announced March 2016.
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Conductance Quantization at zero magnetic field in InSb nanowires
Authors:
Jakob Kammhuber,
Maja C. Cassidy,
Hao Zhang,
Önder Gül,
Fei Pei,
Michiel W. A. de Moor,
Bas Nijholt,
Kenji Watanabe,
Takashi Taniguchi,
Diana Car,
Sebastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectri…
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Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.
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Submitted 11 March, 2016;
originally announced March 2016.
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Josephson $\varphi_{0}$-junction in nanowire quantum dots
Authors:
D. B. Szombati,
S. Nadj-Perge,
D. Car,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are bro…
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The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are broken the supercurrent for $φ=0$ may be finite [3-5]. This corresponds to a ground state of the junction being offset by a phase $φ_{0}$, different from 0 or $π$. Here, we report such a Josephson $φ_{0}$-junction based on a nanowire quantum dot. We use a quantum interferometer device in order to investigate phase offsets and demonstrate that $φ_{0}$ can be controlled by electrostatic gating. Our results have possible far reaching implications for superconducting flux and phase defined quantum bits as well as for exploring topological superconductivity in quantum dot systems.
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Submitted 23 February, 2016; v1 submitted 3 December, 2015;
originally announced December 2015.
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Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
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Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
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Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Authors:
Wei Yi,
Andrey A. Kiselev,
Jacob Thorp,
Ramsey Noah,
Binh-Minh Nguyen,
Steven Bui,
Rajesh D. Rajavel,
Tahir Hussain,
Mark Gyure,
Philip Kratz,
Qi Qian,
Michael J. Manfra,
Vlad S. Pribiag,
Leo P. Kouwenhoven,
Charles M. Marcus,
Marko Sokolich
Abstract:
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is…
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Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.
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Submitted 23 March, 2015;
originally announced March 2015.
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Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Authors:
Fanming Qu,
Arjan J. A. Beukman,
Stevan Nadj-Perge,
Michael Wimmer,
Binh-Minh Nguyen,
Wei Yi,
Jacob Thorp,
Marko Sokolich,
Andrey A. Kiselev,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and c…
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Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
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Submitted 19 February, 2015;
originally announced February 2015.
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1 minute parity lifetime of a NbTiN Cooper-pair transistor
Authors:
David J. van Woerkom,
Attila Geresdi,
Leo P. Kouwenhoven
Abstract:
The parity modulation of the ground state of a superconducting island is a direct consequence of the presence of the Cooper pair condensate preferring an even number of charge carriers. The addition energy of an odd, unpaired quasiparticle equals to the superconducting gap, $Δ$, suppressing single electron hop** in the low temperature limit. Controlling the quasiparticle occupation is of fundame…
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The parity modulation of the ground state of a superconducting island is a direct consequence of the presence of the Cooper pair condensate preferring an even number of charge carriers. The addition energy of an odd, unpaired quasiparticle equals to the superconducting gap, $Δ$, suppressing single electron hop** in the low temperature limit. Controlling the quasiparticle occupation is of fundamental importance for superconducting qubits as single electron tunneling results in decoherence. In particular, topological quantum computation relies on the parity control and readout of Majorana bound states. Here we present parity modulation for the first time of a niobium titanite nitride (NbTiN) Cooper-pair transistor coupled to aluminium (Al) leads. We show that this circuit is compatible with the magnetic field requirement in the range of 100 mT of inducing topological superconductivity in spin-orbit coupled nanowires. Our observed parity lifetime exceeding 1 minute is several orders of magnitude higher than the required gate time of flux-controlled braiding of Majorana states. Our findings readily demonstrate that a NbTiN island can be parity-controlled and therefore provides a good platform for superconducting coherent circuits operating in a magnetic field.
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Submitted 15 January, 2015;
originally announced January 2015.
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Spin-orbit interaction in InSb nanowires
Authors:
I. van Weperen,
B. Tarasinski,
D. Eeltink,
V. S. Pribiag,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
M. Wimmer
Abstract:
We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ co…
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We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.
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Submitted 18 May, 2015; v1 submitted 2 December, 2014;
originally announced December 2014.
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Towards high mobility InSb nanowire devices
Authors:
Önder Gül,
David J. van Woerkom,
Ilse van Weperen,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility…
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We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.
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Submitted 8 May, 2015; v1 submitted 26 November, 2014;
originally announced November 2014.
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Edge-mode Superconductivity in a Two Dimensional Topological Insulator
Authors:
Vlad S. Pribiag,
Arjan J. A. Beukman,
Fanming Qu,
Maja C. Cassidy,
Christophe Charpentier,
Werner Wegscheider,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge mo…
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Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference, we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the 2D topological phase. These experiments establish InAs/GaSb as a robust platform for further confinement of Majoranas into localized states enabling future investigations of non-Abelian statistics.
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Submitted 7 August, 2014;
originally announced August 2014.
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Quantum transport in carbon nanotubes
Authors:
E. A. Laird,
F. Kuemmeth,
G. Steele,
K. Grove-Rasmussen,
J. Nygård,
K. Flensberg,
L. P. Kouwenhoven
Abstract:
Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries, enabled by sophisticated fabrication, have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of transport through nan…
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Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries, enabled by sophisticated fabrication, have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of transport through nanotube devices.
Unlike conventional semiconductors, electrons in nanotubes have two angular momentum quantum numbers, arising from spin and from valley freedom. We focus on the interplay between the two. In single quantum dots defined in short lengths of nanotube, the energy levels associated with each degree of freedom, and the spin-orbit coupling between them, are revealed by Coulomb blockade spectroscopy. In double quantum dots, the combination of quantum numbers modifies the selection rules of Pauli blockade. This can be exploited to read out spin and valley qubits, and to measure the decay of these states through coupling to nuclear spins and phonons. A second unique property of carbon nanotubes is that the combination of valley freedom and electron-electron interactions in one dimension strongly modifies their transport behaviour. Interaction between electrons inside and outside a quantum dot is manifested in SU(4) Kondo behavior and level renormalization. Interaction within a dot leads to Wigner molecules and more complex correlated states.
This review takes an experimental perspective informed by recent advances in theory. As well as the well-understood overall picture, we also state clearly open questions for the field. These advances position nanotubes as a leading system for the study of spin and valley physics in one dimension where electronic disorder and hyperfine interaction can both be reduced to a very low level.
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Submitted 9 July, 2015; v1 submitted 24 March, 2014;
originally announced March 2014.
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Quantum Interference in Plasmonic Circuits
Authors:
Reinier W. Heeres,
Leo P. Kouwenhoven,
Valery Zwiller
Abstract:
Surface plasmon polaritons (plasmons) are a combination of light and a collective oscillation of the free electron plasma at metal-dielectric interfaces. This interaction allows sub-wavelength confinement of light, beyond the diffraction limit inherent to dielectric structures. The resulting electromagnetic fields are more intense and the strength of optical interactions between metallic structure…
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Surface plasmon polaritons (plasmons) are a combination of light and a collective oscillation of the free electron plasma at metal-dielectric interfaces. This interaction allows sub-wavelength confinement of light, beyond the diffraction limit inherent to dielectric structures. The resulting electromagnetic fields are more intense and the strength of optical interactions between metallic structures and light-sources or detectors can be increased. Plasmons maintain non-classical photon statistics and preserve entanglement on plasmon-assisted transmission through thin, patterned metallic films or weakly confining waveguides. For quantum applications it is essential that plasmons behave as indistinguishable quantum particles. Here we report on a quantum interference experiment in a nanoscale plasmonic circuit consisting of an on-chip plasmon beam splitter with integrated superconducting single-photon detectors to allow efficient single plasmon detection. We demonstrate quantum mechanical interaction between pairs of indistinguishable plasmons by observing Hong-Ou-Mandel interference, a hallmark non-classical effect which is the basis of linear optics-based quantum computation. Our work shows that it is feasible to shrink quantum optical experiments to the nanoscale and demonstrates a promising route for sub-wavelength quantum optical networks.
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Submitted 26 September, 2013;
originally announced September 2013.
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Large spin-orbit coupling in carbon nanotubes
Authors:
G. A. Steele,
F. Pei,
E. A. Laird,
J. M. Jol,
H. B. Meerwaldt,
L. P. Kouwenhoven
Abstract:
It has recently been recognized that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the spin-orbit coupling in carbon nanotubes can be significant due to their curved surface. Previous works have reported spin-orbit couplings in reasonable agreement with…
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It has recently been recognized that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the spin-orbit coupling in carbon nanotubes can be significant due to their curved surface. Previous works have reported spin-orbit couplings in reasonable agreement with theory, and this coupling strength has formed the basis of a large number of theoretical proposals. Here we report a spin-orbit coupling in three carbon nanotube devices that is an order of magnitude larger than measured before. We find a zero-field spin splitting of up to 3.4 meV, corresponding to a built-in effective magnetic field of 29 T aligned along the nanotube axis. While the origin of the large spin-orbit coupling is not explained by existing theories, its strength is promising for applications of the spin-orbit interaction in carbon nanotubes devices.
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Submitted 11 April, 2013;
originally announced April 2013.
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Electrical control over single hole spins in nanowire quantum dots
Authors:
V. S. Pribiag,
S. Nadj-Perge,
S. M. Frolov,
J. W. G. van den Berg,
I. van Weperen,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potent…
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Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.
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Submitted 11 February, 2013;
originally announced February 2013.
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Fast spin-orbit qubit in an indium antimonide nanowire
Authors:
J. W. G. van den Berg,
S. Nadj-Perge,
V. S. Pribiag,
S. R. Plissard,
E. P. A. M. Bakkers,
S. M. Frolov,
L. P. Kouwenhoven
Abstract:
Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on R…
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Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on Ramsey fringe measurements, we extract a coherence time T_2* = 8 +/- 1 ns at a driving frequency of 18.65 GHz. Applying a Hahn echo sequence extends this coherence time to 35 ns.
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Submitted 26 October, 2012;
originally announced October 2012.
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A valley-spin qubit in a carbon nanotube
Authors:
Edward A. Laird,
Fei Pei,
Leo. P. Kouwenhoven
Abstract:
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are spinless, allowing for qubit coherence times that have been extended up to seconds in diamond and silicon. Carbon nanotubes are a particularly attractive host mater…
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Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are spinless, allowing for qubit coherence times that have been extended up to seconds in diamond and silicon. Carbon nanotubes are a particularly attractive host material, because the spin-orbit interaction with the valley degree of freedom allows for electrical manipulation of the qubit. In this work, we realise such a qubit in a nanotube double quantum dot. The qubit is encoded in two valley-spin states, with coherent manipulation via electrically driven spin resonance (EDSR) mediated by a bend in the nanotube. Readout is performed by measuring the current in Pauli blockade. Arbitrary qubit rotations are demonstrated, and the coherence time is measured via Hahn echo. Although the measured decoherence time is only 65 ns in our current device, this work offers the possibility of creating a qubit for which hyperfine interaction can be virtually eliminated.
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Submitted 10 October, 2012;
originally announced October 2012.
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Valley-spin blockade and spin resonance in carbon nanotubes
Authors:
Fei Pei,
Edward A. Laird,
Gary A. Steele,
Leo P. Kouwenhoven
Abstract:
Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley…
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Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley degeneracies in the electronic bandstructure. These lead to complicated multiplet states even for two-electron quantum dots thereby significantly weakening the selection rules for Pauli blockade. Only recently have spin qubits been realized in silicon devices where the valley degeneracy is lifted by strain and spatial confinement. In carbon nanotubes Pauli blockade can be observed by lifting valley degeneracy through disorder. In clean nanotubes, quantum dots have to be made ultra-small to obtain a large energy difference between the relevant multiplet states. Here we report on low-disorder nanotubes and demonstrate Pauli blockade based on both valley and spin selection rules. We exploit the bandgap of the nanotube to obtain a large level spacing and thereby a robust blockade. Single-electron spin resonance is detected using the blockade.
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Submitted 9 October, 2012;
originally announced October 2012.
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Suppression of Zeeman gradients by nuclear polarization in double quantum dots
Authors:
S. M. Frolov,
J. Danon,
S. Nadj-Perge,
K. Zuo,
J. W. W. van Tilburg,
V. S. Pribiag,
J. W. G. van den Berg,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum do…
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We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum dots. In the low current state, dynamic nuclear polarization efficiently compensates the Zeeman gradient due to the $g$-factor mismatch, resulting in a suppressed total Zeeman gradient. We present a theoretical model of electron-nuclear feedback that demonstrates a fixed point in nuclear polarization for nearly equal Zeeman splittings in the two dots and predicts a narrowed hyperfine gradient distribution.
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Submitted 7 September, 2012;
originally announced September 2012.
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Avalanche amplification of a single exciton in a semiconductor nanowire
Authors:
Gabriele Bulgarini,
Michael E. Reimer,
Moïra Hocevar,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation…
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Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits.
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Submitted 18 April, 2012;
originally announced April 2012.
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Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
Authors:
V. Mourik,
K. Zuo,
S. M. Frolov,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence…
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Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
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Submitted 12 April, 2012;
originally announced April 2012.
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Bright single-photon sources in bottom-up tailored nanowires
Authors:
Michael E. Reimer,
Gabriele Bulgarini,
Nika Akopian,
Moïra Hocevar,
Maaike Bouwes Bavinck,
Marcel A. Verheijen,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperf…
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The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction.
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Submitted 26 March, 2012;
originally announced March 2012.
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Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
Authors:
S. Nadj-Perge,
V. S. Pribiag,
J. W. G. van den Berg,
K. Zuo,
S. R. Plissard,
E. P. A. M. Bakkers,
S. M. Frolov,
L. P. Kouwenhoven
Abstract:
Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbi…
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Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.
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Submitted 26 April, 2012; v1 submitted 18 January, 2012;
originally announced January 2012.
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Measurement of g-factor tensor in a quantum dot and disentanglement of exciton spins
Authors:
B. J. Witek,
R. W. Heeres,
U. Perinetti,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
V. Zwiller
Abstract:
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with different orientations. The results of these measurements are in good agreement with a model based on exchange terms and Zeeman interaction. In our experiment, polari…
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We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with different orientations. The results of these measurements are in good agreement with a model based on exchange terms and Zeeman interaction. In our experiment, polarization analysis delivers a powerful tool that not only significantly increases the precision of the measurements, but also enables us to probe the exciton spin state evolution in magnetic fields. We propose a disentangling scheme of heavy-hole exciton spins enabling a measurement of the electron spin $T_2$ time.
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Submitted 4 December, 2011; v1 submitted 8 September, 2011;
originally announced September 2011.
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Spin-orbit qubit in a semiconductor nanowire
Authors:
S. Nadj-Perge,
S. M. Frolov,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of single electrons, spin-orbit interaction has proven promising for coherent spin rotations. Here we report a spin-orbit quantum bit implemented in an InAs nanowi…
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Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of single electrons, spin-orbit interaction has proven promising for coherent spin rotations. Here we report a spin-orbit quantum bit implemented in an InAs nanowire, where spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime we realize fast qubit rotations and universal single qubit control using only electric fields. We enhance coherence by dynamically decoupling the qubit from the environment. Our qubits are individually addressable: they are hosted in single-electron quantum dots, each of which has a different Landé g-factor. The demonstration of a nanowire qubit opens ways to harness the advantages of nanowires for use in quantum computing. Nanowires can serve as one-dimensional templates for scalable qubit registers. Unique to nanowires is the possibility to easily vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and push semiconductor qubit fidelities towards error-correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, the flying qubit, for long-distance quantum communication.
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Submitted 30 October, 2010;
originally announced November 2010.
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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
Authors:
Michael E. Reimer,
Maarten P. van Kouwen,
Maria Barkelid,
Moira Hocevar,
Maarten. H. M. van Weert,
Rienk E. Algra,
Erik P. A. M. Bakkers,
Mikael T. Bjork,
Heinz Schmid,
Heike Riel,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical…
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We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
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Submitted 2 September, 2010;
originally announced September 2010.
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Single electron tunneling through high-Q single-wall carbon nanotube NEMS resonators
Authors:
A. K. Huettel,
H. B. Meerwaldt,
G. A. Steele,
M. Poot,
B. Witkamp,
L. P. Kouwenhoven,
H. S. J. van der Zant
Abstract:
By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided. Combining this with pre-defined trenches on the chip, such that the nanotubes are freely suspended above the substrate, enables the formation of highly regular…
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By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided. Combining this with pre-defined trenches on the chip, such that the nanotubes are freely suspended above the substrate, enables the formation of highly regular electronic systems. We show that, in addition, such suspended ultra-clean nanotubes provide excellent high-frequency and low-dissipation mechanical resonators. The motion detection mechanism of our experiment is discussed, and we measure the effect of Coulomb blockade and the back-action of single electron tunneling on the mechanical motion. In addition data on the mechanical higher modes is presented.
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Submitted 30 April, 2010; v1 submitted 29 April, 2010;
originally announced April 2010.
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Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade
Authors:
S. Nadj-Perge,
S. M. Frolov,
J. W. W. van Tilburg,
J. Danon,
Yu. V. Nazarov,
R. Algra,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet states. Partial lifting of spin blockade is explained by spin-orbit and hyperfine mechanisms that enable triplet to singlet transitions. The measurements over…
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We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet states. Partial lifting of spin blockade is explained by spin-orbit and hyperfine mechanisms that enable triplet to singlet transitions. The measurements over a wide range of interdot coupling and tunneling rates to the leads are well reproduced by a simple transport model. This allows us to separate and quantify the contributions of the spin-orbit and hyperfine interactions.
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Submitted 10 February, 2010; v1 submitted 10 February, 2010;
originally announced February 2010.