Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements
Authors:
R. Koushik,
Siddhartha Kumar,
Kazi Rafsanjani Amin,
Mintu Mondal,
John Jesudasan,
Aveek Bid,
Pratap Raychaudhuri,
Arindam Ghosh
Abstract:
We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type sup…
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We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.
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Submitted 24 August, 2013; v1 submitted 20 August, 2013;
originally announced August 2013.
Evidence of gate-tunable topological excitations in two-dimensional electron systems
Authors:
R. Koushik,
Matthias Baenninger,
Vijay Narayan,
Subroto Mukerjee,
Michael Pepper,
Ian Farrer,
David A. Ritchie,
Arindam Ghosh
Abstract:
Topological defects are ubiquitous from solid state physics to cosmology, where they drive phase transitions by proliferating as domain walls, monopoles or vortices. As quantum excitations, they often display fractional charge and anyonic statistics, making them relevant to topologically protected quantum computation, but realizing a controlled physical resource for topological excitations has bee…
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Topological defects are ubiquitous from solid state physics to cosmology, where they drive phase transitions by proliferating as domain walls, monopoles or vortices. As quantum excitations, they often display fractional charge and anyonic statistics, making them relevant to topologically protected quantum computation, but realizing a controlled physical resource for topological excitations has been difficult. Here we report evidence of topological excitations during the localization transition in strongly interacting two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures. We find the electrical conductivity at low electron densities to follow a Berezinskii-Kosterlitz Thouless (BKT)-like order-disorder transition implying a gate-tunable proliferation of charged topological defects. At low temperatures, a weakening in the temperature dependence of conductivity was observed, and linked to the zero point fluctuations and delocalization of the defects. Our experiments also cast crucial insight on the nature of the ground state in strongly interacting 2DESs in presence of disorder.
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Submitted 9 May, 2010;
originally announced May 2010.