Showing 1–50 of 57 results for author: Kou, X

A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system

Authors: Yu Gu, Puyang Huang, Tianhao Chen, Chenyi Fu, Aitian Chen, Shouzhong Peng, Xixiang Zhang, Xufeng Kou

Abstract: We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation, the non-destructive SOT-driven magnetization switching characteristics lead to a random weight matrix with controllable probability distribution. In the meanwh… ▽ More We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation, the non-destructive SOT-driven magnetization switching characteristics lead to a random weight matrix with controllable probability distribution. In the meanwhile, the proposed CIM architecture allows for the concurrent execution of the probabilistic vector-matrix multiplication (PVMM) and binarization. Furthermore, leveraging the effectiveness of random binary cells to propagate multi-bit probabilistic information, our SOT-MRAM-based PBNN system achieves a 97.78\% classification accuracy under a 7.01\% weight variation on the MNIST database through 10 sampling cycles, and the number of bit-level computation operations is reduced by a factor of 6.9 compared to that of the full-precision LeNet-5 network. Our work provides a compelling framework for the design of reliable neural networks tailored to the applications with low power consumption and limited computational resources. △ Less

Submitted 28 March, 2024; originally announced March 2024.

Comments: 5 pages, 10 figures

MSC Class: 94C60 ACM Class: B.2.4; B.3.0

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

Authors: Yuxiang Wang, Minhao Zhao, **glei Zhang, Wenbin Wu, Shichao Li, Yong Zhang, Wenxiang Jiang, Nesta Benno Joseph, Liangcai Xu, Yicheng Mou, Yunkun Yang, Pengliang Leng, Yong Zhang, Li Pi, Alexey Suslov, Mykhaylo Ozerov, Jan Wyzula, Milan Orlita, Fengfeng Zhu, Yi Zhang, Xufeng Kou, Zengwei Zhu, Awadhesh Narayan, Dong Qian, **sheng Wen , et al. (3 additional authors not shown)

Abstract: The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate… ▽ More The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov-de Haas oscillations from Fermi surfaces, indicating highly coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 18 pages, 5 figures

Ultralight vector dark matter search using data from the KAGRA O3GK run

Authors: The LIGO Scientific Collaboration, the Virgo Collaboration, the KAGRA Collaboration, A. G. Abac, R. Abbott, H. Abe, I. Abouelfettouh, F. Acernese, K. Ackley, C. Adamcewicz, S. Adhicary, N. Adhikari, R. X. Adhikari, V. K. Adkins, V. B. Adya, C. Affeldt, D. Agarwal, M. Agathos, O. D. Aguiar, I. Aguilar, L. Aiello, A. Ain, P. Ajith, T. Akutsu, S. Albanesi , et al. (1778 additional authors not shown)

Abstract: Among the various candidates for dark matter (DM), ultralight vector DM can be probed by laser interferometric gravitational wave detectors through the measurement of oscillating length changes in the arm cavities. In this context, KAGRA has a unique feature due to differing compositions of its mirrors, enhancing the signal of vector DM in the length change in the auxiliary channels. Here we prese… ▽ More Among the various candidates for dark matter (DM), ultralight vector DM can be probed by laser interferometric gravitational wave detectors through the measurement of oscillating length changes in the arm cavities. In this context, KAGRA has a unique feature due to differing compositions of its mirrors, enhancing the signal of vector DM in the length change in the auxiliary channels. Here we present the result of a search for $U(1)_{B-L}$ gauge boson DM using the KAGRA data from auxiliary length channels during the first joint observation run together with GEO600. By applying our search pipeline, which takes into account the stochastic nature of ultralight DM, upper bounds on the coupling strength between the $U(1)_{B-L}$ gauge boson and ordinary matter are obtained for a range of DM masses. While our constraints are less stringent than those derived from previous experiments, this study demonstrates the applicability of our method to the lower-mass vector DM search, which is made difficult in this measurement by the short observation time compared to the auto-correlation time scale of DM. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Comments: 20 pages, 5 figures

Report number: LIGO-P2300250

On the Stochastic Gravitational Wave Background from Binary Black Hole Mergers Dynamically Assembled in Dense Star Clusters

Authors: Xiao-Xiao Kou, Giacomo Fragione, Vuk Mandic

Abstract: With about a hundred binary black hole (BBH) mergers detected by LIGO-Virgo-KAGRA, and with several hundreds expected in the current O4 run, GWs are revolutionizing our understanding of the universe. Some BBH sources are too faint to be individually detected, but collectively they may give rise to a stochastic GW background (SGWB). In this paper, we calculate the SGWB associated with BBH mergers d… ▽ More With about a hundred binary black hole (BBH) mergers detected by LIGO-Virgo-KAGRA, and with several hundreds expected in the current O4 run, GWs are revolutionizing our understanding of the universe. Some BBH sources are too faint to be individually detected, but collectively they may give rise to a stochastic GW background (SGWB). In this paper, we calculate the SGWB associated with BBH mergers dynamically assembled in dense star clusters, using state-of-the-art numerical models. We discuss the role of modeling the evolution of the mass distribution of BBH mergers, which has significant implications for model selection and parameter estimation, and could be used to distinguish between different channels of BBH formation. We demonstrate how the birth properties of star clusters affect the amplitude and frequency spectrum of the SGWB, and show that upcoming observation runs of ground-based GW detectors may be sensitive enough to detect it. Even in the case of a non-detection, we find that GW data can be used to constrain the highly uncertain cluster birth properties, which can complement direct observations of young massive clusters and proto-star clusters in the early universe by JWST. △ Less

Submitted 8 January, 2024; originally announced January 2024.

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Authors: Jiuming Liu, Liyang Liao, Bin Rong, Yuyang Wu, Yu Zhang, Hanzhi Ruan, Zhenghang Zhi, Puyang Huang, Shan Yao, Xinyu Cai, Chenjia Tang, Qi Yao, Lu Sun, Yumeng Yang, Guoqiang Yu, Renchao Che, Xufeng Kou

Abstract: Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at th… ▽ More Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications

Authors: Yuhao Shu, Hongtu Zhang, Hao Sun, Mengru Zhang, Wenfeng Zhao, Qi Deng, Zhidong Tang, Yumeng Yuan, Yongqi Hu, Yu Gu, Xufeng Kou, Yajun Ha

Abstract: Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we propose a cryogenic quasi-static embedded DRAM to address the logic-memory mismatch of CIM. Guided by the re-calibrated cryogenic device model, the designed fou… ▽ More Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we propose a cryogenic quasi-static embedded DRAM to address the logic-memory mismatch of CIM. Guided by the re-calibrated cryogenic device model, the designed four-transistor bit-cell achieves full-swing data storage, low power consumption, and extended retention time at cryogenic temperatures. Combined with the adoption of cryogenic write bitline biasing technique and readout circuitry optimization, our 4Kb cryogenic eDRAM chip demonstrates a 1.37$\times$10$^6$ times improvement in retention time, while achieving a 75 times improvement in retention variability, compared to room-temperature operation. Moreover, it also achieves outstanding power performance with a retention power of 112 fW and a dynamic power of 108 $μ$W at 4.2 K, which can be further decreased by 7.1% and 13.6% using the dynamic voltage scaling technique. This work reveals the great potential of cryogenic CMOS for high-density data storage and lays a solid foundation for energy-efficient CIM implementations. △ Less

Submitted 20 November, 2023; originally announced November 2023.

A Read Margin Enhancement Circuit with Dynamic Bias Optimization for MRAM

Authors: Renhe Chen, Albert Lee, Zirui Wang, Di Wu, Xufeng Kou

Abstract: This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across processvoltage-temperature (PVT) variations within an MRAM array. It optimizes read performance by adjusting the read bias voltage dynamically for maximum sensing marg… ▽ More This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across processvoltage-temperature (PVT) variations within an MRAM array. It optimizes read performance by adjusting the read bias voltage dynamically for maximum sensing margin. Simulation results on a 28-nm 1Mb MRAM macro show that the tracking accuracy of the proposed DBO circuit remains above 90% even when the optimal sensing voltage varies up to 50%. Such dynamic tracking strategy further results in up to two orders of magnitude reduction in the bit error rate with respect to different variations, highlighting its effectiveness in enhancing MRAM performance and reliability. △ Less

Submitted 18 September, 2023; originally announced September 2023.

SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training

Authors: Puyang Huang, Yu Gu, Chenyi Fu, Jiaqi Lu, Yiyao Zhu, Renhe Chen, Yongqi Hu, Yi Ding, Hongchao Zhang, Shiyang Lu, Shouzhong Peng, Weisheng Zhao, Xufeng Kou

Abstract: We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables field-free magnetization switching with high endurance (> 10^11), but also hosts multiple stable probabilistic states with a low device-to-device variation (< 6… ▽ More We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables field-free magnetization switching with high endurance (> 10^11), but also hosts multiple stable probabilistic states with a low device-to-device variation (< 6.35%). Accordingly, the proposed PBNN outperforms other neural networks by achieving an 18* increase in training speed, while maintaining an accuracy above 97% under the write and read noise perturbations. Furthermore, by applying the binarization process with an additional SOT-MRAM dummy module, we demonstrate an on-chip MNIST inference performance close to the ideal baseline using our SOT-PBNN hardware. △ Less

Submitted 20 September, 2023; v1 submitted 14 September, 2023; originally announced September 2023.

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Authors: Puyang Huang, Aitian Chen, Jianting Dong, Di Wu, Xinqi Liu, Zhenghang Zhi, Jiuming Liu, Albert Lee, Bin Fang, Jia Zhang, Xi-Xiang Zhang, Xufeng Kou

Abstract: Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Through the thickness modulation of the MgO barrier, the negative TMR component can be enhanced up to 20% und… ▽ More Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Through the thickness modulation of the MgO barrier, the negative TMR component can be enhanced up to 20% under a negative voltage bias. Moreover, the tunnel anisotropic magneto-resistance measurements unveil that the negative TMR component likely arises from the interfacial resonance states (IRS) in the minority band of the bottom ferromagnetic layer. Complementary first principle calculations further quantify the IRS location and strength with respect to the Fermi level position. Our work not only confirm the vital role of IRS in the electrical transport of MTJ, but also provide valuable insights for the design of new-generation voltage-controlled MRAM and related spintronic applications. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves

Authors: W. G. Wang, C. Ni, L. R. Shah, X. M. Kou, J. Q. Xiao

Abstract: Magnetic and transport properties are explored in the current perpendicular-to-plane (CPP) spin salves with Cr doped wide band gap semiconductor ZnTe as one of the ferromagnetic electrodes. A negative magnetoresistance is observed in these CPP spin valves at low temperature, with a strong temperature dependence. This effect can be explained by the large difference of spin scattering asymmetry coef… ▽ More Magnetic and transport properties are explored in the current perpendicular-to-plane (CPP) spin salves with Cr doped wide band gap semiconductor ZnTe as one of the ferromagnetic electrodes. A negative magnetoresistance is observed in these CPP spin valves at low temperature, with a strong temperature dependence. This effect can be explained by the large difference of spin scattering asymmetry coefficients in (Zn,Cr)Te and Cobalt, due to the very different spin polarizations of the two materials as revealed by the DFT calculation. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design

Authors: Zhidong Tang, Zewei Wang, Yumeng Yuan, Chang He, Xin Luo, Ao Guo, Renhe Chen, Yongqi Hu, Longfei Yang, Chengwei Cao, Linlin Liu, Liujiang Yu, Ganbing Shang, Yongfeng Cao, Shoumian Chen, Yuhang Zhao, Shaojian Hu, Xufeng Kou

Abstract: This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorpora… ▽ More This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design. △ Less

Submitted 9 February, 2024; v1 submitted 9 November, 2022; originally announced November 2022.

Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers

Authors: W. G. Wang, C. Ni, A. Ozbay, L. R. Shah, X. Fan, X. M. Kou, E. R. Nowak, J. Q. Xiao

Abstract: Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of t… ▽ More Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hop** conduction through the defect states inside the barrier. △ Less

Submitted 29 October, 2022; originally announced October 2022.

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices

Authors: Puyang Huang, Xinqi Liu, Yue Xin, Yu Gu, Albert Lee, Zhuo Xu, Peng Chen, Yu Zhang, Weijie Deng, Guoqiang Yu, Zhongkai Liu, Qi Yao, Yumeng Yang, Zhifeng Zhu, Xufeng Kou

Abstract: Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linea… ▽ More Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linearity error < 4.19%) and symmetrical long-term potentiation/depression process, resulting in better performance compared to other memristor synapses. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61%. Furthermore, the trainable activation function of SOT-N enables the integrated SOT-ANN to execute the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline. △ Less

Submitted 18 May, 2023; v1 submitted 13 September, 2022; originally announced September 2022.

Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

Authors: Xinqi Liu, Yunyouyou Xia, Lei Gao, Puyang Huang, Liyang Liao, Baoshan Cui, Dirk Backes, Gerrit van der Laan, Thorsten Hesjedal, Yuchen Ji, Peng Chen, Fan Wu, Meixiao Wang, Junwei Zhang, Guoqiang Yu, Cheng Song, Yulin Chen, Zhongkai Liu, Yumeng Yang, Yong Peng, Gang Li, Qi Yao, Xufeng Kou

Abstract: To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2… ▽ More To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Comments: 20 pages, 4 figures

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Authors: **g Zhang, Zhilong Yang, Shuai Liu, Wei Xia, Tongshuai Zhu, Cheng Chen, Chengwei Wang, Meixiao Wang, Sung-Kwan Mo, Lexian Yang, Xufeng Kou, Yanfeng Guo, Haijun Zhang, Zhongkai Liu, Yulin Chen

Abstract: Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such stat… ▽ More Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Comments: 28 pages, 5 figures,

Journal ref: ACS Nano 2021 15 (10), 15850-15857

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

Authors: Lun Li, Yuyang Wu, Xiaoyang Liu, Hanzhi Ruan, Zhenghang Zhi, Jiuming Liu, Yong Zhang, Puyang Huang, Yuchen Ji, Chenjia Tang, Yumeng Yang, Renchao Che, Xufeng Kou

Abstract: The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe f… ▽ More The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications. △ Less

Submitted 1 April, 2022; v1 submitted 31 March, 2022; originally announced March 2022.

Gravitational Waves from Fully General Relativistic Oscillon Preheating

Authors: Xiao-Xiao Kou, James B. Mertens, Chi Tian, Shuang-Yong Zhou

Abstract: As long-lived quasi-solitons from the fragmentation of a scalar condensate, oscillons may dominate the preheating era after inflation. During this period, stochastic gravitational waves can also be generated. We quantify the gravitational wave production in this period with simulations accounting for full general relativity to capture all possible non-perturbative effects. We compute the gravitati… ▽ More As long-lived quasi-solitons from the fragmentation of a scalar condensate, oscillons may dominate the preheating era after inflation. During this period, stochastic gravitational waves can also be generated. We quantify the gravitational wave production in this period with simulations accounting for full general relativity to capture all possible non-perturbative effects. We compute the gravitational wave spectra across a range of choices of the oscillon preheating models and compare our results to a conventional perturbative approach on an FLRW background. We clarify the gauge ambiguities in computing induced gravitational waves from scenarios where dense non-perturbative objects such as oscillons are being formed. In particular, we find that the synchronous gauge tends to contain large artificial enhancements in the gravitational wave spectrum due to gauge modes if gravity plays an important role in the formation of the oscillons, while other gauge choices, such as the radiation gauge or a suitably chosen "1+log" gauge, can efficiently reduce the contributions of gauge modes. The full general relativistic simulations indicate that gravitational wave spectra obtained from the perturbative approach on the FLRW background are fairly accurate, except when oscillon formation induces strong gravitational effects, for which case there can be an order unity enhancement. △ Less

Submitted 7 June, 2022; v1 submitted 14 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. D 105, 123505, 2022

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

Authors: Peng Chen, Qi Yao, Qiang Sun, Alexander J. Grutter, P. Quarterman, Purnima P. Balakrishnan, Christy J. Kinane, Andrew J. Caruana, Sean Langridge, Baoshan Cui, Lun Li, Yuchen Ji, Yong Zhang, Zhongkai Liu, ** Zou, Guoqiang Yu, Yumeng Yang, Xufeng Kou

Abstract: The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic i… ▽ More The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 20 pages, 5 figures

Defeating Catastrophic Forgetting via Enhanced Orthogonal Weights Modification

Authors: Yanni Li, Bing Liu, Kaicheng Yao, Xiaoli Kou, Pengfan Lv, Yueshen Xu, Jiangtao Cui

Abstract: The ability of neural networks (NNs) to learn and remember multiple tasks sequentially is facing tough challenges in achieving general artificial intelligence due to their catastrophic forgetting (CF) issues. Fortunately, the latest OWM Orthogonal Weights Modification) and other several continual learning (CL) methods suggest some promising ways to overcome the CF issue. However, none of existing… ▽ More The ability of neural networks (NNs) to learn and remember multiple tasks sequentially is facing tough challenges in achieving general artificial intelligence due to their catastrophic forgetting (CF) issues. Fortunately, the latest OWM Orthogonal Weights Modification) and other several continual learning (CL) methods suggest some promising ways to overcome the CF issue. However, none of existing CL methods explores the following three crucial questions for effectively overcoming the CF issue: that is, what knowledge does it contribute to the effective weights modification of the NN during its sequential tasks learning? When the data distribution of a new learning task changes corresponding to the previous learned tasks, should a uniform/specific weight modification strategy be adopted or not? what is the upper bound of the learningable tasks sequentially for a given CL method? ect. To achieve this, in this paper, we first reveals the fact that of the weight gradient of a new learning task is determined by both the input space of the new task and the weight space of the previous learned tasks sequentially. On this observation and the recursive least square optimal method, we propose a new efficient and effective continual learning method EOWM via enhanced OWM. And we have theoretically and definitively given the upper bound of the learningable tasks sequentially of our EOWM. Extensive experiments conducted on the benchmarks demonstrate that our EOWM is effectiveness and outperform all of the state-of-the-art CL baselines. △ Less

Submitted 19 November, 2021; originally announced November 2021.

Enhanced countering adversarial attacks via input denoising and feature restoring

Authors: Yanni Li, Wenhui Zhang, Jiawei Liu, Xiaoli Kou, Hui Li, Jiangtao Cui

Abstract: Despite the fact that deep neural networks (DNNs) have achieved prominent performance in various applications, it is well known that DNNs are vulnerable to adversarial examples/samples (AEs) with imperceptible perturbations in clean/original samples. To overcome the weakness of the existing defense methods against adversarial attacks, which damages the information on the original samples, leading… ▽ More Despite the fact that deep neural networks (DNNs) have achieved prominent performance in various applications, it is well known that DNNs are vulnerable to adversarial examples/samples (AEs) with imperceptible perturbations in clean/original samples. To overcome the weakness of the existing defense methods against adversarial attacks, which damages the information on the original samples, leading to the decrease of the target classifier accuracy, this paper presents an enhanced countering adversarial attack method IDFR (via Input Denoising and Feature Restoring). The proposed IDFR is made up of an enhanced input denoiser (ID) and a hidden lossy feature restorer (FR) based on the convex hull optimization. Extensive experiments conducted on benchmark datasets show that the proposed IDFR outperforms the various state-of-the-art defense methods, and is highly effective for protecting target models against various adversarial black-box or white-box attacks. \footnote{Souce code is released at: \href{https://github.com/ID-FR/IDFR}{https://github.com/ID-FR/IDFR}} △ Less

Submitted 19 November, 2021; originally announced November 2021.

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Authors: Shanshan Liu, Jiexiang Yu, Enze Zhang, Zihan Li, Qiang Sun, Yong Zhang, Lun Li, Minhao Zhao, Pengliang Leng, Xiangyu Cao, ** Zou, Xufeng Kou, Jiadong Zang, Faxian Xiu

Abstract: Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation… ▽ More Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation between magnetism and band structure. Here, we show the Berry curvature dominated intrinsic AHE in wafer-scale MnBi2Te4 thin films. By utilizing a high-dielectric SrTiO3 as the back-gate, we unveil an ambipolar conduction and electron-hole carrier (n-p) transition in ~7 septuple layer MnBi2Te4. A quadratic relation between the saturated AHE resistance and longitudinal resistance suggests its intrinsic AHE mechanism. For ~3 septuple layer MnBi2Te4, however, the AHE reverses its sign from pristine negative to positive under the electric-gating. The first-principles calculations demonstrate that such behavior is due to the competing Berry curvature between polarized spin-minority-dominated surface states and spin-majority-dominated inner-bands. Our results shed light on the physical mechanism of the gate-tunable intrinsic AHE in MnBi2Te4 thin films and provide a feasible approach to engineering its AHE. △ Less

Submitted 1 October, 2021; originally announced October 2021.

Comments: 16 pages, 5 figures

r-GAT: Relational Graph Attention Network for Multi-Relational Graphs

Authors: Meiqi Chen, Yuan Zhang, Xiaoyu Kou, Yuntao Li, Yan Zhang

Abstract: Graph Attention Network (GAT) focuses on modelling simple undirected and single relational graph data only. This limits its ability to deal with more general and complex multi-relational graphs that contain entities with directed links of different labels (e.g., knowledge graphs). Therefore, directly applying GAT on multi-relational graphs leads to sub-optimal solutions. To tackle this issue, we p… ▽ More Graph Attention Network (GAT) focuses on modelling simple undirected and single relational graph data only. This limits its ability to deal with more general and complex multi-relational graphs that contain entities with directed links of different labels (e.g., knowledge graphs). Therefore, directly applying GAT on multi-relational graphs leads to sub-optimal solutions. To tackle this issue, we propose r-GAT, a relational graph attention network to learn multi-channel entity representations. Specifically, each channel corresponds to a latent semantic aspect of an entity. This enables us to aggregate neighborhood information for the current aspect using relation features. We further propose a query-aware attention mechanism for subsequent tasks to select useful aspects. Extensive experiments on link prediction and entity classification tasks show that our r-GAT can model multi-relational graphs effectively. Also, we show the interpretability of our approach by case study. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

Authors: Yuchen Ji, Zheng Liu, Peng Zhang, Lun Li, Shifei Qi, Peng Chen, Yong Zhang, Qi Yao, Zhongkai Liu, Kang L. Wang, Zhenhua Qiao, Xufeng Kou

Abstract: The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific… ▽ More The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific spin sub-band configurations. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related metal-to-insulator QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs, namely the spontaneous magnetization owning to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultra-thin films. The modulation of topology and magnetism through structural engineering may provide a useful guidance for the pursuit of QAH-based new phase diagrams and functionalities. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Comments: 22 pages, 4 figures

IFoodCloud: A Platform for Real-time Sentiment Analysis of Public Opinion about Food Safety in China

Authors: Dachuan Zhang, Haoyang Zhang, Zhisheng Wei, Yan Li, Zhiheng Mao, Chunmeng He, Haorui Ma, Xin Zeng, Xiaoling Xie, Xingran Kou, Bingwen Zhang

Abstract: The Internet contains a wealth of public opinion on food safety, including views on food adulteration, food-borne diseases, agricultural pollution, irregular food distribution, and food production issues. In order to systematically collect and analyse public opinion on food safety, we developed IFoodCloud, a platform for the real-time sentiment analysis of public opinion on food safety in China. I… ▽ More The Internet contains a wealth of public opinion on food safety, including views on food adulteration, food-borne diseases, agricultural pollution, irregular food distribution, and food production issues. In order to systematically collect and analyse public opinion on food safety, we developed IFoodCloud, a platform for the real-time sentiment analysis of public opinion on food safety in China. It collects data from more than 3,100 public sources that can be used to explore public opinion trends, public sentiment, and regional attention differences of food safety incidents. At the same time, we constructed a sentiment classification model using multiple lexicon-based and deep learning-based algorithms integrated with IFoodCloud that provide an unprecedented rapid means of understanding the public sentiment toward specific food safety incidents. Our best model's F1-score achieved 0.9737. Further, three real-world cases are presented to demonstrate the application and robustness. IFoodCloud could be considered a valuable tool for promote scientisation of food safety supervision and risk communication. △ Less

Submitted 16 February, 2021; originally announced February 2021.

Van der Waals Ferromagnetic Josephson Junctions

Authors: Linfeng Ai, Enze Zhang, Ce Huang, Xiaoyi Xie, Yunkun Yang, Zehao Jia, Yuda Zhang, Shanshan Liu, Zihan Li, Pengliang Leng, Xingdan Sun, Xufeng Kou, Zheng Han, Faxian Xiu

Abstract: Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build… ▽ More Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and π phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures. △ Less

Submitted 12 January, 2021; originally announced January 2021.

Topological Insulators-Based Magnetic Heterostructure

Authors: Qi Yao, Yuchen Ji, Peng Chen, Qing-Lin He, Xufeng Kou

Abstract: The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films, the MTI heterostructures provide a better framework to manipulate the spin-orbit coupling and spin properties. In this review, we summarize the fundamental mechan… ▽ More The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films, the MTI heterostructures provide a better framework to manipulate the spin-orbit coupling and spin properties. In this review, we summarize the fundamental mechanisms related to the physical orders host in (Bi,Sb)2(Te,Se)3-based hybrid systems. Besides, we provide an assessment on the general strategies to enhance the magnetic coupling and spin-orbit torque strength through different structural engineering approaches and effective interfacial interactions. Finally, we offer an outlook of MTI heterostructures-based spintronics applications, particularly in view of their feasibility to achieve room-temperature operation. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Comments: 33 pages, 11 figures

DisenE: Disentangling Knowledge Graph Embeddings

Authors: Xiaoyu Kou, Yankai Lin, Yuntao Li, Jiahao Xu, Peng Li, Jie Zhou, Yan Zhang

Abstract: Knowledge graph embedding (KGE), aiming to embed entities and relations into low-dimensional vectors, has attracted wide attention recently. However, the existing research is mainly based on the black-box neural models, which makes it difficult to interpret the learned representation. In this paper, we introduce DisenE, an end-to-end framework to learn disentangled knowledge graph embeddings. Spec… ▽ More Knowledge graph embedding (KGE), aiming to embed entities and relations into low-dimensional vectors, has attracted wide attention recently. However, the existing research is mainly based on the black-box neural models, which makes it difficult to interpret the learned representation. In this paper, we introduce DisenE, an end-to-end framework to learn disentangled knowledge graph embeddings. Specially, we introduce an attention-based mechanism that enables the model to explicitly focus on relevant components of entity embeddings according to a given relation. Furthermore, we introduce two novel regularizers to encourage each component of the entity representation to independently reflect an isolated semantic aspect. Experimental results demonstrate that our proposed DisenE investigates a perspective to address the interpretability of KGE and is proved to be an effective way to improve the performance of link prediction tasks. △ Less

Submitted 12 November, 2020; v1 submitted 27 October, 2020; originally announced October 2020.

Comments: There are some mistakes in the paper

The Discovery of Tunable Universality Class in Superconducting $β$-W Thin Films

Authors: Ce Huang, Enze Zhang, Yong Zhang, **glei Zhang, Faxian Xiu, Haiwen Liu, Xiaoyi Xie, Linfeng Ai, Yunkun Yang, Minhao Zhao, Junjie Qi, Lun Li, Shanshan Liu, Zihan Li, Runze Zhan, Ya-Qing Bie, Xufeng Kou, Shaozhi Deng, X. C. Xie

Abstract: The interplay between quenched disorder and critical behavior in quantum phase transitions is conceptually fascinating and of fundamental importance for understanding phase transitions. However, it is still unclear whether or not the quenched disorder influences the universality class of quantum phase transitions. More crucially, the absence of superconducting-metal transitions under in-plane magn… ▽ More The interplay between quenched disorder and critical behavior in quantum phase transitions is conceptually fascinating and of fundamental importance for understanding phase transitions. However, it is still unclear whether or not the quenched disorder influences the universality class of quantum phase transitions. More crucially, the absence of superconducting-metal transitions under in-plane magnetic fields in 2D superconductors imposes constraints on the universality of quantum criticality. Here, we discover the tunable universality class of superconductor-metal transition by changing the disorder strength in $β$-W films with varying thickness. The finite-size scaling uncovers the switch of universality class: quantum Griffiths singularity to multiple quantum criticality at a critical thickness of $t_{c \perp 1}\sim 8 nm$ and then from multiple quantum criticality to single criticality at $t_{c\perp 2}\sim 16 nm$. Moreover, the superconducting-metal transition is observed for the first time under in-plane magnetic fields and the universality class is changed at $t_{c \parallel }\sim 8 nm$. The discovery of tunable universality class under both out-of-plane and in-plane magnetic fields provides broad information for the disorder effect on superconducting-metal transitions and quantum criticality. △ Less

Submitted 24 October, 2020; originally announced October 2020.

Disentangle-based Continual Graph Representation Learning

Authors: Xiaoyu Kou, Yankai Lin, Shaobo Liu, Peng Li, Jie Zhou, Yan Zhang

Abstract: Graph embedding (GE) methods embed nodes (and/or edges) in graph into a low-dimensional semantic space, and have shown its effectiveness in modeling multi-relational data. However, existing GE models are not practical in real-world applications since it overlooked the streaming nature of incoming data. To address this issue, we study the problem of continual graph representation learning which aim… ▽ More Graph embedding (GE) methods embed nodes (and/or edges) in graph into a low-dimensional semantic space, and have shown its effectiveness in modeling multi-relational data. However, existing GE models are not practical in real-world applications since it overlooked the streaming nature of incoming data. To address this issue, we study the problem of continual graph representation learning which aims to continually train a GE model on new data to learn incessantly emerging multi-relational data while avoiding catastrophically forgetting old learned knowledge. Moreover, we propose a disentangle-based continual graph representation learning (DiCGRL) framework inspired by the human's ability to learn procedural knowledge. The experimental results show that DiCGRL could effectively alleviate the catastrophic forgetting problem and outperform state-of-the-art continual learning models. △ Less

Submitted 24 November, 2020; v1 submitted 6 October, 2020; originally announced October 2020.

Observation of topological electronic structure in quasi-1D superconductor TaSe3

Authors: Cheng Chen, Aiji Liang, Shuai Liu, Simin Nie, Junwei Huang, Meixiao Wang, Yiwei Li, Ding Pei, Haifeng Yang, Huijun Zheng, Yong Zhang, Donghui Lu, Makoto Hashimoto, Alexei Barinov, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Xufeng Kou, Lexian Yang, Yanfeng Guo, Zhijun Wang, Hongtao Yuan, Zhongkai Liu, Yulin Chen

Abstract: Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-bas… ▽ More Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-based superconductor FeTe0.55Se0.45. Here, by carrying out synchrotron and laser based angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of a quasi-1D superconductor TaSe3, and identified the nontrivial topological surface states. In addition, our scanning tunneling microscopy (STM) study revealed a clean cleaved surface with a persistent superconducting gap, proving it suitable for further investigation of potential Majorana modes. These results prove TaSe3 as a stoichiometric TSC candidate that is stable and exfoliable, therefore a great platform for the study of rich novel phenomena and application potentials. △ Less

Submitted 7 September, 2020; v1 submitted 4 September, 2020; originally announced September 2020.

Comments: to appear in Matter

NASE: Learning Knowledge Graph Embedding for Link Prediction via Neural Architecture Search

Authors: Xiaoyu Kou, Bingfeng Luo, Huang Hu, Yan Zhang

Abstract: Link prediction is the task of predicting missing connections between entities in the knowledge graph (KG). While various forms of models are proposed for the link prediction task, most of them are designed based on a few known relation patterns in several well-known datasets. Due to the diversity and complexity nature of the real-world KGs, it is inherently difficult to design a model that fits a… ▽ More Link prediction is the task of predicting missing connections between entities in the knowledge graph (KG). While various forms of models are proposed for the link prediction task, most of them are designed based on a few known relation patterns in several well-known datasets. Due to the diversity and complexity nature of the real-world KGs, it is inherently difficult to design a model that fits all datasets well. To address this issue, previous work has tried to use Automated Machine Learning (AutoML) to search for the best model for a given dataset. However, their search space is limited only to bilinear model families. In this paper, we propose a novel Neural Architecture Search (NAS) framework for the link prediction task. First, the embeddings of the input triplet are refined by the Representation Search Module. Then, the prediction score is searched within the Score Function Search Module. This framework entails a more general search space, which enables us to take advantage of several mainstream model families, and thus it can potentially achieve better performance. We relax the search space to be continuous so that the architecture can be optimized efficiently using gradient-based search strategies. Experimental results on several benchmark datasets demonstrate the effectiveness of our method compared with several state-of-the-art approaches. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Comments: Accepted by CIKM 2020, short paper

Current-induced magnetization switching in CoTb amorphous single layer

Authors: R. Q. Zhang, L. Y. Liao, X. Z. Chen, T. Xu, L. Cai, M. H. Guo, Hao Bai, L. Sun, F. H. Xue, J. Su, X. Wang, C. H. Wan, Hua Bai, Y. X. Song, R. Y. Chen, N. Chen, W. J. Jiang, X. F. Kou, J. W. Cai, H. Q. Wu, F. Pan, C. Song

Abstract: We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant… ▽ More We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Comments: 17 pages, 4 figures, Phys. Rev. B 101, 214418 (2020)

Improving BERT with Self-Supervised Attention

Authors: Yiren Chen, Xiaoyu Kou, Jiangang Bai, Yunhai Tong

Abstract: One of the most popular paradigms of applying large pre-trained NLP models such as BERT is to fine-tune it on a smaller dataset. However, one challenge remains as the fine-tuned model often overfits on smaller datasets. A symptom of this phenomenon is that irrelevant or misleading words in the sentence, which are easy to understand for human beings, can substantially degrade the performance of the… ▽ More One of the most popular paradigms of applying large pre-trained NLP models such as BERT is to fine-tune it on a smaller dataset. However, one challenge remains as the fine-tuned model often overfits on smaller datasets. A symptom of this phenomenon is that irrelevant or misleading words in the sentence, which are easy to understand for human beings, can substantially degrade the performance of these finetuned BERT models. In this paper, we propose a novel technique, called Self-Supervised Attention (SSA) to help facilitate this generalization challenge. Specifically, SSA automatically generates weak, token-level attention labels iteratively by probing the fine-tuned model from the previous iteration. We investigate two different ways of integrating SSA into BERT and propose a hybrid approach to combine their benefits. Empirically, through a variety of public datasets, we illustrate significant performance improvement using our SSA-enhanced BERT model. △ Less

Submitted 22 October, 2021; v1 submitted 8 April, 2020; originally announced April 2020.

TextNAS: A Neural Architecture Search Space tailored for Text Representation

Authors: Yu**g Wang, Yaming Yang, Yiren Chen, **g Bai, Ce Zhang, Guinan Su, Xiaoyu Kou, Yunhai Tong, Mao Yang, Lidong Zhou

Abstract: Learning text representation is crucial for text classification and other language related tasks. There are a diverse set of text representation networks in the literature, and how to find the optimal one is a non-trivial problem. Recently, the emerging Neural Architecture Search (NAS) techniques have demonstrated good potential to solve the problem. Nevertheless, most of the existing works of NAS… ▽ More Learning text representation is crucial for text classification and other language related tasks. There are a diverse set of text representation networks in the literature, and how to find the optimal one is a non-trivial problem. Recently, the emerging Neural Architecture Search (NAS) techniques have demonstrated good potential to solve the problem. Nevertheless, most of the existing works of NAS focus on the search algorithms and pay little attention to the search space. In this paper, we argue that the search space is also an important human prior to the success of NAS in different applications. Thus, we propose a novel search space tailored for text representation. Through automatic search, the discovered network architecture outperforms state-of-the-art models on various public datasets on text classification and natural language inference tasks. Furthermore, some of the design principles found in the automatic network agree well with human intuition. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Oscillon Preheating in Full General Relativity

Authors: Xiao-Xiao Kou, Chi Tian, Shuang-Yong Zhou

Abstract: Oscillons are dense objects that may be copiously produced in the preheating period after inflation, during which what role general relativity might play is largely unknown. We investigate the oscillon preheating scenario in full general relativity, and compare the general-relativistic simulations with the traditional ones done in an FLRW background. We find that in certain parameter regions the g… ▽ More Oscillons are dense objects that may be copiously produced in the preheating period after inflation, during which what role general relativity might play is largely unknown. We investigate the oscillon preheating scenario in full general relativity, and compare the general-relativistic simulations with the traditional ones done in an FLRW background. We find that in certain parameter regions the general-relativistic corrections are significant, producing more and denser oscillons, and can be strong enough to collapse the oscillons to black holes. △ Less

Submitted 6 December, 2020; v1 submitted 20 December, 2019; originally announced December 2019.

Comments: 16 pages, 9 figures; to appear in CQG

Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures

Authors: Peng Chen, Yong Zhang, Qi Yao, Fugu Tian, Lun Li, Zhengkun Qi, Xiaoyang Liu, Liyang Liao, Cheng Song, **gyuan Wang, **g Xia, Gang Li, David M. Burn, Gerrit van der Laan, Thorsten Hesjedal, Shilei Zhang, Xufeng Kou

Abstract: Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the t… ▽ More Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer-interface. More importantly, by do** the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the un-paralleled advantages of MTI heterostructures over magnetically doped TI counterparts, in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications. △ Less

Submitted 15 December, 2019; originally announced December 2019.

Comments: 20 pages, 4 figures

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state

Authors: Wei Xia, Xianbiao Shi, Yong Zhang, Hao Su, Qin Wang, Linchao Ding, Leiming Chen, Xia Wang, Zhiqiang Zou, Na Yu, Li Pi, Yufeng Hao, Bin Li, Zengwei Zhu, Weiwei Zhao, Xufeng Kou, Yanfeng Guo

Abstract: High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontri… ▽ More High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the X point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity. △ Less

Submitted 1 December, 2019; originally announced December 2019.

Comments: 16 pages, 4 figures, 1 table. arXiv admin note: text overlap with arXiv:1911.03844

Journal ref: Phys. Rev. B 101, 155117 (2020)

Pressure-induced superconductivity and topological phase transitions in the topological nodal-line semimetal SrAs3

Authors: E. J. Cheng, W. Xia, X. B. Shi, Z. H. Yu, L. Wang, L. M. Yan, D. C. Peets, C. C. Zhu, H. Su, Y. Zhang, D. Z. Dai, X. Wang, Z. Q. Zou, N. Yu, X. F. Kou, W. G. Yang, W. W. Zhao, Y. F. Guo, S. Y. Li

Abstract: Topological nodal-line semimetals (TNLSMs) are materials whose conduction and valence bands cross each other, meeting a topologically-protected closed loop rather than discrete points in the Brillouin zone (BZ). The anticipated properties for TNLSMs include drumhead-like nearly flat surface states, unique Landau energy levels, special collective modes, long-range Coulomb interactions, or the possi… ▽ More Topological nodal-line semimetals (TNLSMs) are materials whose conduction and valence bands cross each other, meeting a topologically-protected closed loop rather than discrete points in the Brillouin zone (BZ). The anticipated properties for TNLSMs include drumhead-like nearly flat surface states, unique Landau energy levels, special collective modes, long-range Coulomb interactions, or the possibility of realizing high-temperature superconductivity. Recently, SrAs3 has been theoretically proposed and then experimentally confirmed to be a TNLSM. Here, we report high-pressure experiments on SrAs3, identifying a Lifshitz transition below 1 GPa and a superconducting transition accompanied by a structural phase transition above 20 GPa. A topological crystalline insulator (TCI) state is revealed by means of density functional theory (DFT) calculations on the emergent high-pressure phase. As the counterpart of topological insulators, TCIs possess metallic boundary states protected by crystal symmetry, rather than time reversal. In consideration of topological surface states (TSSs) and helical spin texture observed in the high-pressure state of SrAs3, the superconducting state may be induced in the surface states, and is most likely topologically nontrivial, making pressurized SrAs3 a strong candidate for topological superconductor. △ Less

Submitted 7 October, 2019; originally announced October 2019.

Comments: 22 pages, 5 figures

Journal ref: npj Quantum Materials 5, 38 (2020)

Time-Series Anomaly Detection Service at Microsoft

Authors: Hansheng Ren, Bixiong Xu, Yu**g Wang, Chao Yi, Congrui Huang, Xiaoyu Kou, Tony Xing, Mao Yang, Jie Tong, Qi Zhang

Abstract: Large companies need to monitor various metrics (for example, Page Views and Revenue) of their applications and services in real time. At Microsoft, we develop a time-series anomaly detection service which helps customers to monitor the time-series continuously and alert for potential incidents on time. In this paper, we introduce the pipeline and algorithm of our anomaly detection service, which… ▽ More Large companies need to monitor various metrics (for example, Page Views and Revenue) of their applications and services in real time. At Microsoft, we develop a time-series anomaly detection service which helps customers to monitor the time-series continuously and alert for potential incidents on time. In this paper, we introduce the pipeline and algorithm of our anomaly detection service, which is designed to be accurate, efficient and general. The pipeline consists of three major modules, including data ingestion, experimentation platform and online compute. To tackle the problem of time-series anomaly detection, we propose a novel algorithm based on Spectral Residual (SR) and Convolutional Neural Network (CNN). Our work is the first attempt to borrow the SR model from visual saliency detection domain to time-series anomaly detection. Moreover, we innovatively combine SR and CNN together to improve the performance of SR model. Our approach achieves superior experimental results compared with state-of-the-art baselines on both public datasets and Microsoft production data. △ Less

Submitted 10 June, 2019; originally announced June 2019.

Comments: KDD 2019

Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Authors: E. J. Fox, I. T. Rosen, Yanfei Yang, George R. Jones, Randolph E. Elmquist, Xufeng Kou, Lei Pan, Kang L. Wang, D. Goldhaber-Gordon

Abstract: In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic cur… ▽ More In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and longitudinal resistivity under 10 m$Ω$ per square at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the pre-breakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hop**. △ Less

Submitted 4 October, 2017; originally announced October 2017.

Comments: 9 pages, 4 figures, with 7 pages of supplementary information

Journal ref: Phys. Rev. B 98, 075145 (2018)

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

Authors: I. T. Rosen, E. J. Fox, Xufeng Kou, Lei Pan, Kang L. Wang, D. Goldhaber-Gordon

Abstract: The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ν=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge… ▽ More The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ν=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $ρ_{yx} = \pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall. △ Less

Submitted 26 July, 2017; originally announced July 2017.

Comments: 5 pages, 3 figures, with 8 pages of supplementary information

Journal ref: npj Quantum Materials 2, 69 (2017)

Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator

Authors: A. C. Mahoney, J. I. Colless, L. Peeters, S. J. Pauka, E. J. Fox, X. Kou, Lei Pan, K. L. Wang, D. Goldhaber-Gordon, D. J. Reilly

Abstract: Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, eve… ▽ More Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, even at zero magnetic field. To date, the QAHE has been investigated using low-frequency transport measurements. However, transport requires contacting the sample and results can be difficult to interpret due to the presence of parallel conductive paths, via either the bulk or surface, or because additional non-chiral edge channels may exist. Here, we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb)2Te3. We identify features associated with chiral edge magnetoplasmons (EMPs), a signature that robust edge-channels are indeed intrinsic to this material system. Our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for a new, on-chip circuit element of practical importance: the TI, zero-field microwave circulator. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

Authors: Qing Lin He, Gen Yin, Luyan Yu, Alexander J. Grutter, Lei Pan, Xufeng Kou, Xiaoyu Che, Guoqiang Yu, Tianxiao Nie, Bin Zhang, Qiming Shao, Koichi Murata, Xiaodan Zhu, Yabin Fan, Xiaodong Han, Brian J. Kirby, Kang L. Wang

Abstract: Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through pr… ▽ More Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film. △ Less

Submitted 5 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Lett. 121, 096802 (2018)

Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure

Authors: Qing Lin He, Lei Pan, Alexander L. Stern, Edward Burks, Xiaoyu Che, Gen Yin, **g Wang, Biao Lian, Quan Zhou, Eun Sang Choi, Koichi Murata, Xufeng Kou, Tianxiao Nie, Qiming Shao, Yabin Fan, Shou-Cheng Zhang, Kai Liu, **g Xia, Kang L. Wang

Abstract: After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A s… ▽ More After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A series of topological phase changes are controlled by the reversal of the magnetization, where a half-integer quantized conductance plateau (0.5e2/h) is observed as a clear signature of the Majorana phase. This transport signature can be well repeated during many magnetic reversal sweeps, and can be tracked at different temperatures, providing a promising evidence of the chiral Majorana edge modes in the system. △ Less

Submitted 17 June, 2016; originally announced June 2016.

Comments: 20 pages, 3 figures

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

Authors: Qing Lin He, Xufeng Kou, Alexander J. Grutter, Lei Pan, Xiaoyu Che, Yuxiang Liu, Tianxiao Nie, Steven M. Disseler, Brian J. Kirby, William Ratcliff II, Qiming Shao, Koichi Murata, Yabin Fan, Mohammad Montazeri, Julie A. Borchers, Kang L. Wang

Abstract: Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineeri… ▽ More Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics. △ Less

Submitted 16 May, 2016; originally announced May 2016.

Comments: 25 pages, 4 figures

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Authors: Yabin Fan, Xufeng Kou, Pramey Upadhyaya, Qiming Shao, Lei Pan, Murong Lang, Xiaoyu Che, Jianshi Tang, Mohammad Montazeri, Koichi Murata, Li-Te Chang, Mustafa Akyol, Guoqiang Yu, Tianxiao Nie, Kin L. Wong, Jun Liu, Yong Wang, Yaroslav Tserkovnyak, Kang L. Wang

Abstract: Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-fiel… ▽ More Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate FET structure. The SOT strength can be modulated by a factor of 4 within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies. △ Less

Submitted 23 November, 2015; originally announced November 2015.

Comments: 22 pages, 4 figures

Nanoscale $β$-Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

Authors: Dimitrios Koumoulis, Gerald D. Morris, Liang He, Xufeng Kou, Danny King Jr, Dong Wang, Masrur D. Hossain, Kang L. Wang, Gregory A. Fiete, Mercouri G. Kanatzidis, Louis-S. Bouchard

Abstract: Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling… ▽ More Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling near surfaces or at interfaces of topologically inequivalent materials. Such a method could advance the study of interactions. Herein we present a non-invasive depth-profiling technique based on $β$-NMR spectroscopy of radioactive $^8$Li$^+$ ions that can provide "one-dimensional imaging" in films of fixed thickness and generates nanoscale views of the electronic wavefunctions and magnetic order at topological surfaces and interfaces. By map** the $^8$Li nuclear resonance near the surface and 10 nm deep into the bulk of pure and Cr-doped bismuth antimony telluride films, we provide signatures related to the TI properties and their topological non-trivial characteristics that affect the electron-nuclear hyperfine field, the metallic shift and magnetic order. These nanoscale variations in $β$-NMR parameters reflect the unconventional properties of the topological materials under study, and understanding the role of heterogeneities is expected to lead to the discovery of novel phenomena involving quantum materials. △ Less

Submitted 30 June, 2015; originally announced June 2015.

Comments: 46 pages, 12 figures in Proc. Natl. Aca. Sci. USA (2015) Published online - early edition

Magnetism-induced massive Dirac spectra and topological defects in the surface state of Cr-doped Bi$_2$Se$_3$-bilayer topological insulators

Authors: C. -C. Chen, M. L. Teague, L. He, X. Kou, M. Lang, W. Fan, N. Woodward, K. -L. Wang, N. -C. Yeh

Abstract: Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic (STS) studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers (QL), a spatially inhomogeneous surface spectral gap Δopens up be… ▽ More Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic (STS) studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers (QL), a spatially inhomogeneous surface spectral gap Δopens up below T_c^{2D}, which is much higher than the bulk Curie temperature T_c^{3D}. The mean value and spatial homogeneity of the gap Δgenerally increase with increasing c-axis magnetic field (H) and increasing Cr do** level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δis non-monotonic, showing an initial increase below T_c^{2D} followed by a dip and then reaching maximum at T << T_c^{3D}. These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependence: a 3D contribution from the bulk magnetism that dominates at low T, and a 2D contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T_c^{3D} << T < T_c^{2D}. Additionally, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0 and become suppressed under strong c-axis magnetic fields, and are attributed to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions. △ Less

Submitted 17 November, 2015; v1 submitted 22 June, 2015; originally announced June 2015.

Comments: Manuscript 14 pages, 6 figures. Supplementary Information 7 pages. Accepted for publication in New Journal of Physics (2015)

Journal ref: New Journal of Physics 17, 113042 (2015)

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb$_x$,Bi$_{1-x}$)$_2$Te$_3$

Authors: Shreyas Patankar, J. P. Hinton, Joel Griesmar, J. Orenstein, J. S. Dodge, Xufeng Kou, Lei Pan, Kang L. Wang, A. J. Bestwick, E. J. Fox, D. Goldhaber-Gordon, **g Wang, Shou-Cheng Zhang

Abstract: We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a… ▽ More We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a peak in the real part of $Θ_K(ω)$ and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located $\approx$ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of $Θ_K$ in the ultrathin film limit, $d\geq2$ quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for $d<8$~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces. △ Less

Submitted 2 December, 2015; v1 submitted 4 May, 2015; originally announced May 2015.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 92, 214440 (2015)

Metal-to-Insulator Switching in Quantum Anomalous Hall States

Authors: Xufeng Kou, Lei Pan, **g Wang, Yabin Fan, Eun Sang Choi, Wei-Li Lee, Tianxiao Nie, Koichi Murata, Qiming Shao, Shou-Cheng Zhang, Kang L. Wang

Abstract: After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudi… ▽ More After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the 6 quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is realized through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications. △ Less

Submitted 23 September, 2015; v1 submitted 13 March, 2015; originally announced March 2015.

Journal ref: Nature Communications 6:8474 (2015)