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A Mechatronics view at nerve conduction
Authors:
Jörg P. Kotthaus
Abstract:
Stimulated by ongoing discussions about the relevance of mechanical motion in the propagation of nerve signals capillary waves of water-based electrolytes in elastic tubular systems are considered as an essential ingredient. Their propagation velocities, controlled by the elastic properties and geometry of the neuron membrane as well as the density of the confined electrolyte, are shown to very we…
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Stimulated by ongoing discussions about the relevance of mechanical motion in the propagation of nerve signals capillary waves of water-based electrolytes in elastic tubular systems are considered as an essential ingredient. Their propagation velocities, controlled by the elastic properties and geometry of the neuron membrane as well as the density of the confined electrolyte, are shown to very well match observed nerve conduction velocities. As the capillary wave packets experience little dam** and exhibit non-linear behavior they can propagate a soliton excitation. The orientation of water dipoles by the high electric fields up to about 10 million V/m in the about 1 nm thin layer adjacent to the elastic neuron membrane causes radial forces that modulate the diameter of the nerve cell with a change of the voltage bias across the cell membrane, caused, e. g., by local injection of ions. Acting like an electrically driven peristaltic pump the cell body thus can launch capillary waves into the axon which also transport neutral dipole current pulses modulated the varying voltage bias. At the synaptic end of the axon these dipole current pulses can cause voltage changes and initiate chemical signaling. In contrast to the traditional Hodgkin-Huxley model of nerve conduction the proposed mechanisms avoids charge currents and thus exhibits low dissipation. Specific features that could further influence and verify the proposed alternative mechanisms of nerve conduction are discussed.
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Submitted 26 September, 2019; v1 submitted 13 September, 2019;
originally announced September 2019.
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Collective electronic excitation in a trapped ensemble of photogenerated dipolar excitons and free holes revealed by inelastic light scattering
Authors:
Sebastian Dietl,
Sheng Wang,
Dieter Schuh,
Werner Wegscheider,
Jörg P. Kotthaus,
Aron Pinczuk,
Alexander W. Holleitner,
Ursula Wurstbauer
Abstract:
Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal…
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Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal a very sharp low-lying collective mode that is identified at an energy of 0.44 meV and a FWHM of only ~50 $μ$eV. This mode is interpreted as a plasmon excitation of the excess hole system coupled to the photogenerated indirect excitons. The emission energy of the indirect excitons shifts under the application of a perpendicular applied electric field with the quantum-confined Stark effect unperturbed from the presence of free charge carriers. Our results illustrate the potential of studying low-lying collective excitations in photogenerated exciton systems to explore the many-body phase diagram, related phase transitions, and interaction physics.
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Submitted 13 December, 2016;
originally announced December 2016.
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Classical Stückelberg interferometry of a nanomechanical two-mode system at room temperature
Authors:
Maximilian J. Seitner,
Hugo Ribeiro,
Johannes Kölbl,
Thomas Faust,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
The transition from classical to quantum mechanics has intrigued scientists in the past and remains one of the most fundamental conceptual challenges in state-of-the-art physics. Beyond the quantum mechanical correspondence principle, quantum-classical analogies have attracted considerable interest. In this work, we present classical two-mode interference for a nanomechanical two-mode system, real…
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The transition from classical to quantum mechanics has intrigued scientists in the past and remains one of the most fundamental conceptual challenges in state-of-the-art physics. Beyond the quantum mechanical correspondence principle, quantum-classical analogies have attracted considerable interest. In this work, we present classical two-mode interference for a nanomechanical two-mode system, realizing classical Stückelberg interferometry. In the past, Stückelberg interferometry has been investigated exclusively in quantum mechanical two-level systems. Here, we experimentally demonstrate a classical analog of Stückelberg interferometry taking advantage of coherent energy exchange between two-strongly coupled, high quality factor nanomechanical resonator modes. Furthermore, we provide an exact theoretical solution for the double passage Stückelberg problem which reveals the analogy of the return probabilities in the quantum mechanical and the classical version of the problem. This result qualifies classical two-mode systems at large as a testbed for quantum mechanical interferometry.
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Submitted 1 July, 2016; v1 submitted 2 February, 2016;
originally announced February 2016.
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Confocal shift interferometry of coherent emission from trapped dipolar excitons
Authors:
Jens Repp,
Georg J. Schinner,
Enrico Schubert,
Ashish K. Rai,
Dirk Reuter,
Andreas D. Wieck,
Ursula Wurstbauer,
Joerg P. Kotthaus,
Alexander W. Holleitner
Abstract:
We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic em…
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We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK.
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Submitted 19 November, 2014;
originally announced November 2014.
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Circuit Electromechanics with a Non-Metallized Nanobeam
Authors:
Matthias Pernpeintner,
Thomas Faust,
Fredrik Hocke,
Jörg P. Kotthaus,
Eva M. Weig,
Hans Huebl,
Rudolf Gross
Abstract:
We have realized a nano-electromechanical hybrid system consisting of a silicon nitride beam dielectrically coupled to a superconducting microwave resonator. We characterize the sample by making use of the Duffing nonlinearity of the strongly driven beam. In particular, we calibrate the amplitude spectrum of the mechanical motion and determine the electromechanical vacuum coupling. A high quality…
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We have realized a nano-electromechanical hybrid system consisting of a silicon nitride beam dielectrically coupled to a superconducting microwave resonator. We characterize the sample by making use of the Duffing nonlinearity of the strongly driven beam. In particular, we calibrate the amplitude spectrum of the mechanical motion and determine the electromechanical vacuum coupling. A high quality factor of 480,000 at a resonance frequency of 14 MHz is achieved at 0.5 K. The experimentally determined electromechanical vacuum coupling of 11.5 mHz is quantitatively compared with finite element based model calculations.
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Submitted 28 July, 2014; v1 submitted 25 July, 2014;
originally announced July 2014.
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Signatures of two-level defects in the temperature-dependent dam** of nanomechanical silicon nitride resonators
Authors:
Thomas Faust,
Johannes Rieger,
Maximilian J. Seitner,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
The dam** rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent dam** of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for am…
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The dam** rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent dam** of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long wavelength resonator modes to the high frequency phonon environment.
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Submitted 14 October, 2013;
originally announced October 2013.
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Coherent control of a nanomechanical two-level system
Authors:
Thomas Faust,
Johannes Rieger,
Maximilian J. Seitner,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
The Bloch sphere is a generic picture describing a coupled two-level system and the coherent dynamics of its superposition states under control of electromagnetic fields. It is commonly employed to visualise a broad variety of phenomena ranging from spin ensembles and atoms to quantum dots and superconducting circuits. The underlying Bloch equations describe the state evolution of the two-level sy…
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The Bloch sphere is a generic picture describing a coupled two-level system and the coherent dynamics of its superposition states under control of electromagnetic fields. It is commonly employed to visualise a broad variety of phenomena ranging from spin ensembles and atoms to quantum dots and superconducting circuits. The underlying Bloch equations describe the state evolution of the two-level system and allow characterising both energy and phase relaxation processes in a simple yet powerful manner.
Here we demonstrate the realisation of a nanomechanical two-level system which is driven by radio frequency signals. It allows to extend the above Bloch sphere formalism to nanoelectromechanical systems. Our realisation is based on the two orthogonal fundamental flexural modes of a high quality factor nanostring resonator which are strongly coupled by a dielectric gradient field. Full Bloch sphere control is demonstrated via Rabi, Ramsey and Hahn echo experiments. This allows manipulating the classical superposition state of the coupled modes in amplitude and phase and enables deep insight into the decoherence mechanisms of nanomechanical systems. We have determined the energy relaxation time T1 and phase relaxation times T2 and T2*, and find them all to be equal. This not only indicates that energy relaxation is the dominating source of decoherence, but also demonstrates that reversible dephasing processes are negligible in such collective mechanical modes. We thus conclude that not only T1 but also T2 can be increased by engineering larger mechanical quality factors. After a series of ground-breaking experiments on ground state cooling and non-classical signatures of nanomechanical resonators in recent years, this is of particular interest in the context of quantum information processing.
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Submitted 13 December, 2012;
originally announced December 2012.
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Frequency and Q-factor control of nanomechanical resonators
Authors:
Johannes Rieger,
Thomas Faust,
Maximilian J. Seitner,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
We present an integrated scheme for dielectric drive and read-out of high-Q nanomechanical resonators which enables tuning of both the resonance frequency and quality factor with an applied DC voltage. A simple model for altering these quantities is derived, incorporating the resonator's complex electric polarizability and position in an inhomogeneous electric field, which agrees very well with th…
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We present an integrated scheme for dielectric drive and read-out of high-Q nanomechanical resonators which enables tuning of both the resonance frequency and quality factor with an applied DC voltage. A simple model for altering these quantities is derived, incorporating the resonator's complex electric polarizability and position in an inhomogeneous electric field, which agrees very well with the experimental findings as well as FEM simulations. By comparing two sample geometries we are able to show that careful electrode design can determine the direction of frequency tuning of flexural in- and out-of-plane modes of a string resonator. Furthermore we demonstrate that the mechanical quality factor can be voltage reduced more than fivefold.
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Submitted 10 July, 2012;
originally announced July 2012.
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Single exciton emission from gate-defined quantum dots
Authors:
G. J. Schinner,
J. Repp,
E. Schubert,
A. K. Rai,
D. Reuter,
A. D. Wieck,
A. O. Govorov,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcit…
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With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.
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Submitted 14 April, 2012;
originally announced April 2012.
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Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system
Authors:
M. Yu. Melnikov,
J. P. Kotthaus,
V. Pellegrini,
L. Sorba,
G. Biasiol,
V. S. Khrapai
Abstract:
We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly lin…
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We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].
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Submitted 22 August, 2012; v1 submitted 14 February, 2012;
originally announced February 2012.
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Non-adiabatic dynamics of two strongly coupled nanomechanical resonator modes
Authors:
Thomas Faust,
Johannes Rieger,
Maximilian J. Seitner,
Peter Krenn,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
The Landau-Zener transition is a fundamental concept for dynamical quantum systems and has been studied in numerous fields of physics. Here we present a classical mechanical model system exhibiting analogous behaviour using two inversely tuneable, strongly coupled modes of the same nanomechanical beam resonator. In the adiabatic limit, the anticrossing between the two modes is observed and the cou…
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The Landau-Zener transition is a fundamental concept for dynamical quantum systems and has been studied in numerous fields of physics. Here we present a classical mechanical model system exhibiting analogous behaviour using two inversely tuneable, strongly coupled modes of the same nanomechanical beam resonator. In the adiabatic limit, the anticrossing between the two modes is observed and the coupling strength extracted. Swee** an initialized mode across the coupling region allows map** of the progression from diabatic to adiabatic transitions as a function of the sweep rate.
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Submitted 4 May, 2012; v1 submitted 19 January, 2012;
originally announced January 2012.
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Enlarged magnetic focusing radius of photoinduced ballistic currents
Authors:
Markus Stallhofer,
Christoph Kastl,
Marcel Brändlein,
Dieter Schuh,
Werner Wegscheider,
Jörg. P. Kotthaus,
Gerhard Abstreiter,
Alexander Holleitner
Abstract:
We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The e…
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We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason.
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Submitted 16 January, 2012;
originally announced January 2012.
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Many-body correlations of electrostatically trapped dipolar excitons
Authors:
G. J. Schinner,
J. Repp,
E. Schubert,
A. K. Rai,
D. Reuter,
A. D. Wieck,
A. O. Govorov,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceedin…
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We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceeding the excitonic separation. With decreasing temperature and increasing density n <= 5*10^10 cm^{-2} we find an increasingly asymmetric PL lineshape with a sharpening blue edge and a broad red tail which we interpret to reflect correlated behavior mediated by dipolar interactions. From the PL intensity I(E) below the PL maximum at E_{0} we extract at T < 5 K a distinct power law I(E) \sim (E_{0}-E)^-|α| with -|α|\sim -0.8 in the range E_{0}-E of 1.5-4 meV, comparable to the dipolar interaction energy.
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Submitted 14 April, 2012; v1 submitted 30 November, 2011;
originally announced November 2011.
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Microwave cavity-enhanced transduction for plug and play nanomechanics at room temperature
Authors:
Thomas Faust,
Peter Krenn,
Stephan Manus,
Jörg P. Kotthaus,
Eva M. Weig
Abstract:
Nanomechanical resonators with increasingly high quality factors are enabled following recent insights into energy storage and loss mechanisms in nanoelectromechanical systems (NEMS). Consequently, efficient, non-dissipative transduction schemes are required to avoid the dominating influence of coupling losses. We present an integrated NEMS transducer based on a microwave cavity dielectrically cou…
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Nanomechanical resonators with increasingly high quality factors are enabled following recent insights into energy storage and loss mechanisms in nanoelectromechanical systems (NEMS). Consequently, efficient, non-dissipative transduction schemes are required to avoid the dominating influence of coupling losses. We present an integrated NEMS transducer based on a microwave cavity dielectrically coupled to an array of doubly-clamped pre-stressed silicon nitride beam resonators. This cavity-enhanced detection scheme allows resolving the resonators' Brownian motion at room temperature while preserving their high mechanical quality factor of 290,000 at 6.6 MHz. Furthermore, our approach constitutes an "opto"mechanical system in which backaction effects of the microwave field are employed to alter the effective dam** of the resonators. In particular, cavity-pumped self-oscillation yields a linewidth of only 5 Hz. Thereby, an adjustement-free, all-integrated and self-driven nanoelectromechanical resonator array interfaced by just two microwave connectors is realised, potentially useful for applications in sensing and signal processing.
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Submitted 27 December, 2011; v1 submitted 6 September, 2011;
originally announced September 2011.
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Forming and confining of dipolar excitons by quantizing magnetic fields
Authors:
K. Kowalik-Seidl,
X. P. Vögele,
F. Seilmeier,
D. Schuh,
W. Wegscheider,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illumin…
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We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures.
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Submitted 16 February, 2011; v1 submitted 2 September, 2010;
originally announced September 2010.
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Acoustic phonon-based interaction between coplanar quantum circuits in magnetic field
Authors:
M. G. Prokudina,
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity o…
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We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity of B. This indicates that the spatial regions where the phonon emission/reabsorption is efficient are controlled by magnetic field. The results are interpreted in terms of non-equilibrium transport via skip** orbits in two-dimensional electron system.
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Submitted 17 November, 2010; v1 submitted 5 August, 2010;
originally announced August 2010.
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Long exciton spin memory in coupled quantum wells
Authors:
Katarzyna Kowalik-Seidl,
Xaver P. Vögele,
Bernhard N. Rimpfl,
Stephan Manus,
Dieter Schuh,
Werner Wegscheider,
Alexander W. Holleitner,
Jörg P. Kotthaus
Abstract:
Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, de…
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Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons.
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Submitted 16 July, 2010; v1 submitted 1 April, 2010;
originally announced April 2010.
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Measuring nanomechanical motion with an imprecision far below the standard quantum limit
Authors:
G. Anetsberger,
E. Gavartin,
O. Arcizet,
Q. P. Unterreithmeier,
E. M. Weig,
M. L. Gorodetsky,
J. P. Kotthaus,
T. J. Kippenberg
Abstract:
We demonstrate a transducer of nanomechanical motion based on cavity enhanced optical near-fields capable of achieving a shot-noise limited imprecision more than 10 dB below the standard quantum limit (SQL). Residual background due to fundamental thermodynamical frequency fluctuations allows a total imprecision 3 dB below the SQL at room temperature (corresponding to 600 am/Hz^(1/2) in absolute un…
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We demonstrate a transducer of nanomechanical motion based on cavity enhanced optical near-fields capable of achieving a shot-noise limited imprecision more than 10 dB below the standard quantum limit (SQL). Residual background due to fundamental thermodynamical frequency fluctuations allows a total imprecision 3 dB below the SQL at room temperature (corresponding to 600 am/Hz^(1/2) in absolute units) and is known to reduce to negligible values for moderate cryogenic temperatures. The transducer operates deeply in the quantum backaction dominated regime, prerequisite for exploring quantum backaction, measurement-induced squeezing and accessing sub-SQL sensitivity using backaction evading techniques.
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Submitted 19 March, 2010;
originally announced March 2010.
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Dam** of Nanomechanical Resonators
Authors:
Quirin P. Unterreithmeier,
Thomas Faust,
Jorg P. Kotthaus
Abstract:
We study the transverse oscillatory modes of nanomechanical silicon nitride strings under high tensile stress as a function of geometry and mode index m <= 9. Reproducing all observed resonance frequencies with classical elastic theory we extract the relevant elastic constants. Based on the oscillatory local strain we successfully predict the observed mode-dependent dam** with a single frequency…
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We study the transverse oscillatory modes of nanomechanical silicon nitride strings under high tensile stress as a function of geometry and mode index m <= 9. Reproducing all observed resonance frequencies with classical elastic theory we extract the relevant elastic constants. Based on the oscillatory local strain we successfully predict the observed mode-dependent dam** with a single frequency independent fit parameter. Our model clarifies the role of tensile stress on dam** and hints at the underlying microscopic mechanisms.
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Submitted 9 March, 2010;
originally announced March 2010.
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Resonant coupling of a Bose-Einstein condensate to a micromechanical oscillator
Authors:
D. Hunger,
S. Camerer,
T. W. Haensch,
D. Koenig,
J. P. Kotthaus,
J. Reichel,
P. Treutlein
Abstract:
We report experiments in which the vibrations of a micromechanical oscillator are coupled to the motion of Bose-condensed atoms in a trap. The interaction relies on surface forces experienced by the atoms at about one micrometer distance from the mechanical structure. We observe resonant coupling to several well-resolved mechanical modes of the condensate. Coupling via surface forces does not re…
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We report experiments in which the vibrations of a micromechanical oscillator are coupled to the motion of Bose-condensed atoms in a trap. The interaction relies on surface forces experienced by the atoms at about one micrometer distance from the mechanical structure. We observe resonant coupling to several well-resolved mechanical modes of the condensate. Coupling via surface forces does not require magnets, electrodes, or mirrors on the oscillator and could thus be employed to couple atoms to molecular-scale oscillators such as carbon nanotubes.
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Submitted 4 March, 2010;
originally announced March 2010.
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Nonlinear Switching Dynamics in a Nanomechanical Resonator
Authors:
Quirin P. Unterreithmeier,
Thomas Faust,
Jorg P. Kotthaus
Abstract:
The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing, memory elements, reduced noise characteristics in an oscillator or signal amplification. Approaching the quantum regime, concepts have been proposed that enable lo…
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The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing, memory elements, reduced noise characteristics in an oscillator or signal amplification. Approaching the quantum regime, concepts have been proposed that enable low backaction measurement techniques or facilitate the visualisation of quantum mechanical effects. Here we study the dynamic response of nanoelectromechanical resonators in the nonlinear regime aiming at a more detailed understanding and an exploitation for switching applications. Whereas most previous investigations concentrated on dynamic phenomena arising at the onset of bistability, we present experiments that yield insight into the non-adiabatic evolution of the system while subjected to strong driving pulses and the subsequent relaxation. Modeling the behaviour quantitatively with a Duffing oscillator, we can control switching between its two stable states at high speeds, exceeding recently demonstrated results by 10,000.
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Submitted 21 September, 2009;
originally announced September 2009.
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Photocurrent Properties of Freely Suspended Carbon Nanotubes under Uniaxial Strain
Authors:
S. M. Kaniber,
L. Song,
J. P. Kotthaus,
A. W. Holleitner
Abstract:
The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the non-monotonous behavior by a superposition of the influence of the uniaxial strain o…
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The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the non-monotonous behavior by a superposition of the influence of the uniaxial strain on the resistivity of the CNTs and the effects caused by Schottky contacts between the CNTs and the metal contacts.
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Submitted 25 May, 2009;
originally announced May 2009.
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Near-field cavity optomechanics with nanomechanical oscillators
Authors:
G. Anetsberger,
O. Arcizet,
Q. P. Unterreithmeier,
R. Rivière,
A. Schliesser,
E. M. Weig,
J. P. Kotthaus,
T. J. Kippenberg
Abstract:
Cavity-enhanced radiation pressure coupling between optical and mechanical degrees of freedom allows quantum-limited position measurements and gives rise to dynamical backaction enabling amplification and cooling of mechanical motion. Here we demonstrate purely dispersive coupling of high Q nanomechanical oscillators to an ultra-high finesse optical microresonator via its evanescent field, exten…
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Cavity-enhanced radiation pressure coupling between optical and mechanical degrees of freedom allows quantum-limited position measurements and gives rise to dynamical backaction enabling amplification and cooling of mechanical motion. Here we demonstrate purely dispersive coupling of high Q nanomechanical oscillators to an ultra-high finesse optical microresonator via its evanescent field, extending cavity optomechanics to nanomechanical oscillators. Dynamical backaction mediated by the optical dipole force is observed, leading to laser-like coherent nanomechanical oscillations solely due to radiation pressure. Moreover, sub-fm/Hz^(1/2) displacement sensitivity is achieved, with a measurement imprecision equal to the standard quantum limit (SQL), which coincides with the nanomechanical oscillator's zero-point fluctuations. The achievement of an imprecision at the SQL and radiation-pressure dynamical backaction for nanomechanical oscillators may have implications not only for detecting quantum phenomena in mechanical systems, but also for a variety of other precision experiments. Owing to the flexibility of the near-field coupling approach, it can be readily extended to a diverse set of nanomechanical oscillators and particularly provides a route to experiments where radiation pressure quantum backaction dominates at room temperature, enabling ponderomotive squeezing or QND measurements.
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Submitted 7 September, 2009; v1 submitted 26 April, 2009;
originally announced April 2009.
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Density Enhanced Diffusion of Dipolar Excitons within a One-Dimensional Channel
Authors:
X. P. Vogele,
D. Schuh,
W. Wegscheider,
J. P. Kotthaus,
A. W. Holleitner
Abstract:
We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys non-linear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The c…
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We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys non-linear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The corresponding 1D diffusion coefficient exceeds the one in 2D by far and depends linearly on the exciton density. We attribute the findings to screening of quantum well disorder by the dipolar excitons.
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Submitted 30 January, 2009;
originally announced January 2009.
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Phonon-mediated non-equilibrium interaction between nanoscale devices
Authors:
G. J. Schinner,
H. P. Tranitz,
W. Wegscheider,
J. P. Kotthaus,
S. Ludwig
Abstract:
Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from a biased quantum point contact emit phonons and a portion of them are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform energy spectrosco…
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Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from a biased quantum point contact emit phonons and a portion of them are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform energy spectroscopy on these excited electrons employing a tunable electrostatic barrier in an electrically separate and unbiased detector circuit. The transferred energy is found to be bounded by a maximum value corresponding to Fermi-level electrons excited and back-scattered by absorbing interface phonons. Our results imply that phonon-mediated interaction plays an important role for the decoherence of solid-state-based quantum circuits.
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Submitted 22 January, 2009;
originally announced January 2009.
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Photoconductive gain in semiconductor quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which sh…
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We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin.
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Submitted 6 October, 2008;
originally announced October 2008.
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Optoelectronic Sensitization of Carbon Nanotubes by CdTe Nanocrystals
Authors:
B. Zebli,
H. A. Vieyra,
I. Carmeli,
A. Hartschuh,
J. P. Kotthaus,
A. W. Holleitner
Abstract:
We investigate the photoconductance of single-walled carbon nanotube-nanocrystalhybrids. The nanocrystals are bound to the nanotubes via molecular recognition. We find that the photoconductance of the hybrids can be adjusted by the absorption characteristics of the nanocrystals. In addition, the photoconductance of the hybrids surprisingly exhibits a slow time constant of about 1 ms after excita…
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We investigate the photoconductance of single-walled carbon nanotube-nanocrystalhybrids. The nanocrystals are bound to the nanotubes via molecular recognition. We find that the photoconductance of the hybrids can be adjusted by the absorption characteristics of the nanocrystals. In addition, the photoconductance of the hybrids surprisingly exhibits a slow time constant of about 1 ms after excitation of the nanocrystals. The data are consistent with a bolometrically induced current increase in the nanotubes caused by photon absorption in the nanocrystals.
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Submitted 12 February, 2009; v1 submitted 14 July, 2008;
originally announced July 2008.
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Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well whic…
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We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.
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Submitted 6 June, 2008;
originally announced June 2008.
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Optically induced transport properties of freely suspended semiconductor submicron channels
Authors:
C. Rossler,
K. -D. Hof,
S. Manus,
S. Ludwig,
J. P. Kotthaus,
J. Simon,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a ti…
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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.
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Submitted 15 May, 2008;
originally announced May 2008.
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Nonequilibrium phenomena in adjacent electrically isolated nanostructures
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acous…
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We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acoustic phonon based energy transfer between the two mutually isolated circuits.
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Submitted 6 May, 2008;
originally announced May 2008.
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Nonequilibrium interactions between two quantum circuits
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is used to supply energy quanta to the second nanostructure (detector). Absorption of these nonequilibrium quanta of energy generates a dc-current in the detector,…
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We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is used to supply energy quanta to the second nanostructure (detector). Absorption of these nonequilibrium quanta of energy generates a dc-current in the detector, or changes its differential conductance. We present results for a double quantum dot, a single quantum dot or a second QPC placed in the detector circuit. In all three cases a detection of quanta with energies up to ~1 meV is possible for bias voltages across the drive-QPC in the mV range. The results are qualitatively consistent with an energy transfer mechanism based on nonequilibrium acoustic phonons.
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Submitted 25 November, 2008; v1 submitted 6 May, 2008;
originally announced May 2008.
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Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells
Authors:
A. Gartner,
L. Prechtel,
D. Schuh,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trap** mechanism is well explained by a combination of the quant…
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We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trap** mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trap** potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.
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Submitted 16 May, 2007;
originally announced May 2007.
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Counterflow of electrons in two isolated quantum point contacts
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the det…
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We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the detector QPC is tuned to a transition region between its quantized conductance plateaus and the drive QPC is almost pinched-off. We interpret this counterflow phenomenon in terms of an asymmetric phonon-induced excitation of electrons in the leads of the detector QPC.
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Submitted 3 September, 2007; v1 submitted 2 April, 2007;
originally announced April 2007.
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An electrostatically defined serial triple quantum dot charged with few electrons
Authors:
D. Schröer,
A. D. Greentree,
L. Gaudreau,
K. Eberl,
L. C. L. Hollenberg,
J. P. Kotthaus,
S. Ludwig
Abstract:
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are…
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A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are compared with experimental results. In addition, the tunneling conductance through all three quantum dots in series is studied. Quantum cellular automata processes are identified, which are where charge reconfiguration between two dots occurs in response to the addition of an electron in the third dot.
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Submitted 16 March, 2007;
originally announced March 2007.
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A double-dot quantum ratchet driven by an independently biased quantum point contact
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of…
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We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.
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Submitted 22 August, 2006; v1 submitted 14 June, 2006;
originally announced June 2006.
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Drift mobility of long-living excitons in coupled GaAs quantum wells
Authors:
A. Gartner,
A. W. Holleitner,
D. Schuh,
J. P. Kotthaus
Abstract:
We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across sev…
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We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of >10^5 cm2/eVs is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.
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Submitted 25 February, 2006; v1 submitted 24 February, 2006;
originally announced February 2006.
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Dynamics of Long-Living Excitons in Tunable Potential Landscapes
Authors:
Andreas Gartner,
Dieter Schuh,
Jorg P. Kotthaus
Abstract:
A novel method to experimentally study the dynamics of long-living excitons in coupled quantum well semiconductor heterostructures is presented. Lithographically defined top gate electrodes imprint in-plane artificial potential landscapes for excitons via the quantum confined Stark effect. Excitons are shuttled laterally in a time-dependent potential landscape defined by an interdigitated gate s…
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A novel method to experimentally study the dynamics of long-living excitons in coupled quantum well semiconductor heterostructures is presented. Lithographically defined top gate electrodes imprint in-plane artificial potential landscapes for excitons via the quantum confined Stark effect. Excitons are shuttled laterally in a time-dependent potential landscape defined by an interdigitated gate structure. Long-range drift exceeding a distance of 150 um at an exciton drift velocity > 1000 m/s is observed in a gradient potential formed by a resistive gate stripe.
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Submitted 6 September, 2005;
originally announced September 2005.
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Molecular states in a one-electron double quantum dot
Authors:
A. K. Huettel,
S. Ludwig,
H. Lorenz,
K. Eberl,
J. P. Kotthaus
Abstract:
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic f…
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The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.
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Submitted 5 July, 2005;
originally announced July 2005.
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Direct control of the tunnel splitting in a one-electron double quantum dot
Authors:
A. K. Huettel,
S. Ludwig,
K. Eberl,
J. P. Kotthaus
Abstract:
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizin…
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Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizing particular anticrossing features in the stability diagram at finite source-drain bias. By modification of gate voltages defining the confinement potential as well as by variation of a perpendicular magnetic field we demonstrate the tunability of the coherent tunnel coupling.
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Submitted 3 January, 2005;
originally announced January 2005.
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Periodic Field Emission from an Isolated Nano-Scale Electron Island
Authors:
D. V. Scheible,
C. Weiss,
J. P. Kotthaus,
R. H. Blick
Abstract:
We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation repro…
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We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation reproduces the experimental data and shows deviation from the Fowler-Nordheim description due to the island's electric isolation.
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Submitted 10 September, 2004;
originally announced September 2004.
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Single electron-phonon interaction in a suspended quantum dot phonon cavity
Authors:
E. M. Höhberger,
R. H. Blick,
T. Brandes,
J. Kirschbaum,
W. Wegscheider,
M. Bichler,
J. P. Kotthaus
Abstract:
An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode co…
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An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy.
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Submitted 6 April, 2003;
originally announced April 2003.
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Spin blockade in ground state resonance of a quantum dot
Authors:
A. K. Huettel,
H. Qin,
A. W. Holleitner,
R. H. Blick,
K. Neumaier,
D. Weinmann,
K. Eberl,
J. P. Kotthaus
Abstract:
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We s…
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We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We support this by probing the bias, magnetic field and temperature dependence of the transport spectrum. Weak violation of the blockade is modelled by detailed calculations of non-linear transport taking into account forbidden transitions.
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Submitted 8 August, 2002; v1 submitted 6 September, 2001;
originally announced September 2001.
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Edge and bulk effects in the Terahertz-photoconductivity of an antidot superlattice
Authors:
B. G. L. Jager,
S. Wimmer,
A. Lorke,
J. P. Kotthaus,
W. Wegscheider,
M. Bichler
Abstract:
We investigate the Terahertz(THz)-response of a square antidot superlattice by means of photoconductivity measurements using a Fourier-transform-spectrometer. We detect, spectrally resolved, the cyclotron resonance and the fundamental magnetoplasmon mode of the periodic superlattice. In the dissipative transport regime both resonances are observed in the photoresponse. In the adiabatic transport…
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We investigate the Terahertz(THz)-response of a square antidot superlattice by means of photoconductivity measurements using a Fourier-transform-spectrometer. We detect, spectrally resolved, the cyclotron resonance and the fundamental magnetoplasmon mode of the periodic superlattice. In the dissipative transport regime both resonances are observed in the photoresponse. In the adiabatic transport regime, at integer filling factor $ν=2$, only the cyclotron resonance is observed. From this we infer that different mechanisms contribute to converting the absorption of THz-radiation into photoconductivity in the cyclotron and in the magnetoplasmon resonances, respectively.
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Submitted 18 May, 2000;
originally announced May 2000.
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Nonlinear acousto-electric transport in a two-dimensional electron system
Authors:
A. O. Govorov,
A. V. Kalameitsev,
M. Rotter,
A. Wixforth,
J. P. Kotthaus,
K. H. Hoffmann,
N. Botkin
Abstract:
We study both theoretically and experimentally the nonlinear interaction between an intense surface acoustic wave and a two-dimensional electron plasma in semiconductor-piezocrystal hybrid structures. The experiments on hybrid systems exhibit strongly nonlinear acousto-electric effects. The plasma turns into moving electron stripes, the acousto-electric current reaches its maximum, and the sound…
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We study both theoretically and experimentally the nonlinear interaction between an intense surface acoustic wave and a two-dimensional electron plasma in semiconductor-piezocrystal hybrid structures. The experiments on hybrid systems exhibit strongly nonlinear acousto-electric effects. The plasma turns into moving electron stripes, the acousto-electric current reaches its maximum, and the sound absorption strongly decreases. To describe the nonlinear phenomena, we develop a coupled-amplitude method for a two-dimensional system in the strongly nonlinear regime of interaction. At low electron densities the absorption coefficient decreases with increasing sound intensity, whereas at high electron density the absorption coefficient is not a monotonous function of the sound intensity. High-harmonic generation coefficients as a function of the sound intensity have a nontrivial behavior. Theory and experiment are found to be in a good agreement.
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Submitted 6 May, 2000;
originally announced May 2000.
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Determination of the complex microwave photoconductance of a single quantum dot
Authors:
H. Qin,
F. Simmel,
R. H. Blick,
J. P. Kotthaus,
W. Wegscheider,
M. Bichler
Abstract:
A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance re…
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A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance resolves photon-assisted tunneling (PAT) in the non-linear regime through the ground state and an excited state as well. The out-of-phase component (susceptance) allows to study charge relaxation within the quantum dot on a time scale comparable to the microwave beat period.
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Submitted 10 November, 2000; v1 submitted 10 March, 2000;
originally announced March 2000.
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Stable integration of isolated cell membrane patches in a nanomachined aperture: a step towards a novel device for membrane physiology
Authors:
N. Fertig,
A. Tilke,
R. H. Blick,
J. P. Kotthaus,
J. C. Behrends,
G. ten Bruggencate
Abstract:
We investigate the microscopic contact of a cell/semiconductor hybrid. The semiconductor is nanostructured with the aim of single channel recording of ion channels in cell membranes. This approach will overcome many limitations of the classical patch-clamp technique. The integration of silicon-based devices 'on-chip' promises novel types of experiments on single ion channels.
We investigate the microscopic contact of a cell/semiconductor hybrid. The semiconductor is nanostructured with the aim of single channel recording of ion channels in cell membranes. This approach will overcome many limitations of the classical patch-clamp technique. The integration of silicon-based devices 'on-chip' promises novel types of experiments on single ion channels.
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Submitted 14 October, 1999;
originally announced October 1999.
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Microwave spectroscopy on a double quantum dot with an on-chip Josephson oscillator
Authors:
A. W. Holleitner,
H. Qin,
F. Simmel,
B. Irmer,
R. H. Blick,
J. P. Kotthaus,
A. V. Ustinov,
K. Eberl
Abstract:
We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an 'ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO$_x$/Nb junction as a microwave source…
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We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an 'ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO$_x$/Nb junction as a microwave source. We find photon-assisted tunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source.
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Submitted 11 April, 2000; v1 submitted 6 October, 1999;
originally announced October 1999.
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Spectroscopy of nanoscopic semiconductor rings
Authors:
A. Lorke,
R. J. Luyken,
A. O. Govorov,
J. P. Kotthaus,
J. M. Garcia,
P. M. Petroff
Abstract:
Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximate…
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Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximately one flux quantum threads the interior of each ring, a change in the ground state from angular momentum $\ell = 0$ to $\ell = -1$ takes place. This ground state transition is revealed both by a drastic modification of the excitation spectrum and by a change in the magnetic field dispersion of the single-electron charging energy.
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Submitted 1 December, 1999; v1 submitted 18 August, 1999;
originally announced August 1999.
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Lateral tunneling through the controlled barrier between edge channels in a two-dimentional electron system
Authors:
A. A. Shashkin,
V. T. Dolgopolov,
E. V. Deviatov,
B. Irmer,
A. G. C. Haubrich,
J. P. Kotthaus,
M. Bichler,
W. Wegscheider
Abstract:
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to…
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We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to be strongly asymmetric and include, apart from a positive tunneling branch, the negative branch that corresponds to the current overflowing the barrier. We establish the barrier height depends linearly on both gate voltage and magnetic field and we describe the data in terms of electron tunneling between the outermost edge channels.
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Submitted 12 May, 1999;
originally announced May 1999.
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Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
Authors:
F. Simmel,
David Abusch-Magder,
D. A. Wharam,
M. A. Kastner,
J. P. Kotthaus
Abstract:
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits variation of the number of electrons on the quantum dot without significant shape distortion. The ratio of charging energy to single particle energy is considerab…
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We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits variation of the number of electrons on the quantum dot without significant shape distortion. The ratio of charging energy to single particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single particle level spacing and thus clearly contradict the expectation of random matrix theory.
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Submitted 26 January, 1999;
originally announced January 1999.