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Unravelling local spin polarization of Zhang-Rice singlet in lightly hole-doped cuprates using high-energy optical conductivity
Authors:
Iman Santoso,
Wei Ku,
Tomonori Shirakawa,
Gerd Neuber,
Xinmao Yin,
M. Enoki,
Masaki Fujita,
Ruixing Liang,
T. Venkatesan,
George A. Sawatzky,
Aleksei Kotlov,
Seiji Yunoki,
Michael Rübhausen,
Andrivo Rusydi
Abstract:
Unrevealing local magnetic and electronic correlations in the vicinity of charge carriers is crucial in order to understand rich physical properties in correlated electron systems. Here, using high-energy optical conductivity (up to 35 eV) as a function of temperature and polarization, we observe a surprisingly strong spin polarization of the local spin singlet with enhanced ferromagnetic correlat…
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Unrevealing local magnetic and electronic correlations in the vicinity of charge carriers is crucial in order to understand rich physical properties in correlated electron systems. Here, using high-energy optical conductivity (up to 35 eV) as a function of temperature and polarization, we observe a surprisingly strong spin polarization of the local spin singlet with enhanced ferromagnetic correlations between Cu spins near the doped holes in lightly hole-doped La$_{1.95}$Sr$_{0.05}$Cu$_{0.95}$Zn$_{0.05}$O$_{4}$. The changes of the local spin polarization manifest strongly in the temperature-dependent optical conductivity at ~7.2 eV, with an anomaly at the magnetic stripe phase (~25 K), accompanied by anomalous spectral-weight transfer in a broad energy range. Supported by theoretical calculations, we also assign high-energy optical transitions and their corresponding temperature dependence, particularly at ~2.5 ~8.7, ~9.7, ~11.3 and ~21.8 eV. Our result shows the importance of a strong mixture of spin singlet and triplet states in hole-doped cuprates and demonstrates a new strategy to probe local magnetic correlations using high- energy optical conductivity in correlated electron systems.
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Submitted 8 April, 2017;
originally announced April 2017.
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Emerging giant resonant exciton induced by Ta-substitution in anatase TiO$_{2}$: a tunable correlation effect
Authors:
Z. Yong,
P. E. Trevisanutto,
L. Chiodo,
I. Santoso,
A. R. Barman,
T. C. Asmara,
S. Dhar,
A. Kotlov,
A. Terentjevs,
F. Della Sala,
V. Olevano,
M. Rübhausen,
T. Venkatesan,
A. Rusydi
Abstract:
Titanium dioxide (TiO$_2$) has rich physical properties with potential implications in both fundamental physics and new applications. Up-to-date, the main focus of applied research is to tune its optical properties, which is usually done via do** and/or nano-engineering. However, understanding the role of $d$-electrons in materials and possible functionalization of $d$-electron properties are st…
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Titanium dioxide (TiO$_2$) has rich physical properties with potential implications in both fundamental physics and new applications. Up-to-date, the main focus of applied research is to tune its optical properties, which is usually done via do** and/or nano-engineering. However, understanding the role of $d$-electrons in materials and possible functionalization of $d$-electron properties are still major challenges. Herewith, within a combination of an innovative experimental technique, high energy optical conductivity, and of the state-of-the-art {\it ab initio} electronic structure calculations, we report an emerging, novel resonant exciton in the deep ultraviolet region of the optical response. The resonant exciton evolves upon low concentration Ta-substitution in anatase TiO$_{2}$ films. It is surprisingly robust and related to strong electron-electron and electron-hole interactions. The $d$- and $f$- orbitals localization, due to Ta-substitution, plays an unexpected role, activating strong electronic correlations and dominating the optical response under photoexcitation. Our results shed light on a new optical phenomenon in anatase TiO$_{2}$ films and on the possibility of tuning electronic properties by Ta substitution.
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Submitted 22 May, 2016;
originally announced May 2016.
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Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity
Authors:
T. C. Asmara,
A. Annadi,
I. Santoso,
P. K. Gogoi,
A. Kotlov,
H. M. Omer,
M. Motapothula,
M. B. H. Breese,
M. Rübhausen,
T. Venkatesan,
Ariando,
A. Rusydi
Abstract:
In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/Sr…
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In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (more than 4 unit cells of LaAlO3) there is indeed a 0.5 electron transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (less than 4 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sub-layers (from AlO2 to LaO) as large as 0.5 electron is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces.
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Submitted 4 December, 2014;
originally announced December 2014.
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Large spectral weight transfer in optical conductivity of SrTiO$_{3}$ induced by intrinsic vacancies
Authors:
Teguh C. Asmara,
Xiao Wang,
Iman Santoso,
Qinfang Zhang,
Tomonori Shirakawa,
Dongchen Qi,
Aleksei Kotlov,
Mallikarjuna R. Motapothula,
Mark H. Breese,
T. Venkatesan,
Seiji Yunoki,
Michael Rübhausen,
Ariando,
Andrivo Rusydi
Abstract:
The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesti…
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The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesting that strong correlations play an important role. While for anion (O) vacancies $σ_{1}$ shows changes from 7.4 eV up to 35 eV. These unexpected results can be explained in terms of orbital reconstruction.
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Submitted 29 June, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
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Direct observation of room temperature high-energy resonant excitonic effects in graphene
Authors:
I. Santoso,
P. K Gogoi,
H. B. Su,
H. Huang,
Y. Lu,
D. Qi,
W. Chen,
M. A. Majidi,
Y. P. Feng,
A. T. S. Wee,
K. P. Loh,
T. Venkatesan,
R. P. Saichu,
A. Goos,
A. Kotlov,
M. Ruebhausen,
A. Rusydi
Abstract:
Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of reso…
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Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of resonant exciton scales linearly with number of graphene layer (up to \emph{at least} 8 layers) implying quantum character of electrons in graphene. Furthermore, a prominent excitation at 5.4eV, which is a mixture of interband transitions from $π$ to $π^{*}$ at the M point and a $π$ plasmonic excitation, is observed. In contrast, for graphite the resonant exciton is not observable but strong interband transitions are seen instead. Supported by theoretical calculations, for $N \leq$ 28 the $σ_1$ is dominated by the resonant exciton, while for $N >$ 28 it is a mixture between exitonic and interband transitions. The latter is characteristic for graphite, indicating a crossover in the electronic structure. Our study shows that important elementary excitations in graphene occur at high binding energies and elucidate the differences in the way electrons interact in graphene and graphite.
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Submitted 16 January, 2011;
originally announced January 2011.
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Short proof of the Gallai-Edmonds Structure Theorem
Authors:
Andrei Kotlov
Abstract:
We derive the Gallai-Edmonds Structure Theorem from Hall's Theorem.
We derive the Gallai-Edmonds Structure Theorem from Hall's Theorem.
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Submitted 23 November, 2000;
originally announced November 2000.
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The Coppersmith-Tetali-Winkler Identity for Mechanical Systems
Authors:
Andrei Kotlov
Abstract:
Using a mixture of linear algebra and statics, we derive what can be viewed as a slight generalization of the Coppersmith-Tetali-Winkler Identity $H(i,j)+H(j,k)+H(k,i)=H(j,i)+H(k,j)+H(i,k)$ for hitting times of a random walk.
Using a mixture of linear algebra and statics, we derive what can be viewed as a slight generalization of the Coppersmith-Tetali-Winkler Identity $H(i,j)+H(j,k)+H(k,i)=H(j,i)+H(k,j)+H(i,k)$ for hitting times of a random walk.
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Submitted 23 November, 2000;
originally announced November 2000.
