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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data
Authors:
The CMS,
LHCb Collaborations,
:,
V. Khachatryan,
A. M. Sirunyan,
A. Tumasyan,
W. Adam,
T. Bergauer,
M. Dragicevic,
J. Erö,
M. Friedl,
R. Frühwirth,
V. M. Ghete,
C. Hartl,
N. Hörmann,
J. Hrubec,
M. Jeitler,
W. Kiesenhofer,
V. Knünz,
M. Krammer,
I. Krätschmer,
D. Liko,
I. Mikulec,
D. Rabady,
B. Rahbaran
, et al. (2807 additional authors not shown)
Abstract:
A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta…
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A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
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Submitted 17 August, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Mechanical Design and Material Budget of the CMS Barrel Pixel Detector
Authors:
C. Amsler,
K. Bösiger,
V. Chiochia,
W. Erdmann,
K. Gabathuler,
R. Horisberger,
S. König,
D. Kotlinski,
R. Maier,
B. Meier,
Hp. Meyer,
A. Rizzi,
P. Robmann,
S. Scherr,
A. Schmidt,
S. Steiner,
S. Streuli
Abstract:
The Compact Muon Solenoid experiment at the Large Hadron Collider at CERN includes a silicon pixel detector as its innermost component. Its main task is the precise reconstruction of charged particles close to the primary interaction vertex. This paper gives an overview of the mechanical requirements and design choices for the barrel pixel detector. The distribution of material in the detector a…
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The Compact Muon Solenoid experiment at the Large Hadron Collider at CERN includes a silicon pixel detector as its innermost component. Its main task is the precise reconstruction of charged particles close to the primary interaction vertex. This paper gives an overview of the mechanical requirements and design choices for the barrel pixel detector. The distribution of material in the detector as well as its description in the Monte Carlo simulation are discussed in detail.
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Submitted 30 April, 2009;
originally announced April 2009.
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CMS Barrel Pixel Detector Overview
Authors:
H. Chr. Kästli,
W. Bertl,
W. Erdmann,
K. Gabathuler,
Ch. Hörmann,
R. Horisberger,
S. König,
D. Kotlinski,
B. Meier,
P. Robmann,
T. Rohe,
S. Streuli
Abstract:
The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of t…
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The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of the pixel barrel detector, its mechanical support structure, electronics components, services and its expected performance.
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Submitted 21 February, 2007;
originally announced February 2007.
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Design and performance of the silicon sensors for the CMS barrel pixel detector
Authors:
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
R. Horisberger,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program…
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The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.
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Submitted 12 February, 2007;
originally announced February 2007.
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Simulation of Heavily Irradiated Silicon Pixel Detectors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
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Submitted 24 May, 2006;
originally announced May 2006.
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Design and Performance of the CMS Pixel Detector Readout Chip
Authors:
H. Chr. Kaestli,
M. Barbero,
W. Erdmann,
Ch. Hoermann,
R. Horisberger,
D. Kotlinski,
B. Meier
Abstract:
The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded…
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The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded. We present the architecture of the final CMS pixel detector readout chip with special emphasis on the analog readout chain. Measurements of its performance are discussed.
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Submitted 24 February, 2006; v1 submitted 18 November, 2005;
originally announced November 2005.
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Qualification Procedures of the CMS Pixel Barrel Modules
Authors:
A. Starodumov,
W. Erdmann,
R. Horisberger,
H. Chr. Kaestli,
D. Kotlinski,
U. Langenegger,
B. Meier,
T. Rohe,
P. Trueb
Abstract:
The CMS pixel barrel system will consist of three layers built of about 800 modules. One module contains 66560 readout channels and the full pixel barrel system about 48 million channels. It is mandatory to test each channel for functionality, noise level, trimming mechanism, and bump bonding quality. Different methods to determine the bump bonding yield with electrical measurements have been de…
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The CMS pixel barrel system will consist of three layers built of about 800 modules. One module contains 66560 readout channels and the full pixel barrel system about 48 million channels. It is mandatory to test each channel for functionality, noise level, trimming mechanism, and bump bonding quality. Different methods to determine the bump bonding yield with electrical measurements have been developed. Measurements of several operational parameters are also included in the qualification procedure. Among them are pixel noise, gains and pedestals. Test and qualification procedures of the pixel barrel modules are described and some results are presented.
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Submitted 18 October, 2005;
originally announced October 2005.
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Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon.
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Submitted 5 January, 2006; v1 submitted 5 October, 2005;
originally announced October 2005.
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Performance of the CMS Pixel Detector at an upgraded LHC
Authors:
R. Horisberger,
D. Kotlinski,
T. Rohe
Abstract:
The CMS experiment will include a pixel detector for pattern recognition and vertexing. It will consist of three barrel layers and two endcaps on each side, providing three space-points up to a pseudoraditity of 2.1. Taking into account the expected limitations of its performance in the LHC environment an 8-9 layer pixel detector for an upgraded LHC is discussed.
The CMS experiment will include a pixel detector for pattern recognition and vertexing. It will consist of three barrel layers and two endcaps on each side, providing three space-points up to a pseudoraditity of 2.1. Taking into account the expected limitations of its performance in the LHC environment an 8-9 layer pixel detector for an upgraded LHC is discussed.
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Submitted 24 October, 2005; v1 submitted 11 July, 2005;
originally announced July 2005.
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A double junction model of irradiated silicon pixel sensors for LHC
Authors:
V. Chiochia,
M. Swartz,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to…
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In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.
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Submitted 30 June, 2005;
originally announced June 2005.
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Extraction of electric field in heavily irradiated silicon pixel sensors
Authors:
A. Dorokhov,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to…
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A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
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Submitted 25 June, 2005; v1 submitted 6 December, 2004;
originally announced December 2004.
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Fluence Dependence of Charge Collection of irradiated Pixel Sensors
Authors:
T. Rohe,
D. Bortoletto,
V. Chiochia,
L. M. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
D. A. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between…
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The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors.
In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.
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Submitted 4 January, 2005; v1 submitted 23 November, 2004;
originally announced November 2004.
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Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Authors:
Vincenzo Chiochia,
Morris Swartz,
Daniela Bortoletto,
Lucien Cremaldi,
Susanna Cucciarelli,
Andrei Dorokhov,
Christoph Hoermann,
Dongwook Kim,
Marcin Konecki,
Danek Kotlinski,
Kirill Prokofiev,
Christian Regenfus,
Tilman Rohe,
David A. Sanders,
Seunghee Son,
Thomas Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar…
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Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trap** observed in the data.
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Submitted 4 May, 2005; v1 submitted 16 November, 2004;
originally announced November 2004.
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High Level Tracker Triggers for CMS
Authors:
Danek Kotlinski,
Andrey Starodumov
Abstract:
Two fast trigger algorithms based on 3 innermost hits in the CMS Inner Tracker are presented. One of the algorithms will be applied at LHC low luminosity to select B decay channels. Performance of the algorithm is demonstrated for the decay channel Bs->Ds+pi. The second algorithm will be used to select tau-jets at LHC high luminosity.
Two fast trigger algorithms based on 3 innermost hits in the CMS Inner Tracker are presented. One of the algorithms will be applied at LHC low luminosity to select B decay channels. Performance of the algorithm is demonstrated for the decay channel Bs->Ds+pi. The second algorithm will be used to select tau-jets at LHC high luminosity.
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Submitted 11 March, 2002;
originally announced March 2002.