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Core-clad Pr(3+)-doped Ga(In)-Ge-As-Se-(I) glass fibers: preparation, investigation, simulation of laser characteristics
Authors:
E. V. Karaksina,
V. S. Shiryaev,
M. F. Churbanov,
E. A. Anashkina,
T. V. Kotereva,
G. E. Snopatin
Abstract:
Core-clad fibers on the basis of high-purity 1300 ppmw Pr(3+)-doped Ga-Ge-As-Se and 2000 ppmw Pr(3+) -doped In-Ge-As-Se-I glasses have been prepared. The minimum optical losses of the fibers are at the level of 1 dB/m in the wavelength range, where there is no influence of the praseodymium absorption. At present, it is the best result obtained for core-clad rare- earth-doped chalcogenide fibers wi…
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Core-clad fibers on the basis of high-purity 1300 ppmw Pr(3+)-doped Ga-Ge-As-Se and 2000 ppmw Pr(3+) -doped In-Ge-As-Se-I glasses have been prepared. The minimum optical losses of the fibers are at the level of 1 dB/m in the wavelength range, where there is no influence of the praseodymium absorption. At present, it is the best result obtained for core-clad rare- earth-doped chalcogenide fibers with high dopant concentration. The fibers exhibit the broadband luminescence in the spectral range of 3.5-5.5 micron. The values of luminescence lifetime at the wavelength of 4.7 micron are within 6.5-8.2 ms closed to those for the bulk glasses obtained previously. Simulation of laser properties for these core-clad fibers in the three-level cascade scheme was carried out. The low level of optical losses experimentally achieved in these fibers is one of main criteria for development of mid-IR fiber systems.
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Submitted 8 August, 2017; v1 submitted 5 May, 2017;
originally announced May 2017.
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Luminescent Ge-related centre in high-pressure synthesized diamond
Authors:
E. A. Ekimov,
S. G. Lyapin,
K. N. Boldyrev,
M. V. Kondrin,
R. Khmelnitskiy,
V. A. Gavva,
T. V. Kotereva,
M. N. Popova
Abstract:
We report on the high-pressure synthesis of novel nano- and microcrystalline high-quality diamonds with luminescent Ge-related centers. Observation of the four-line fine structure in luminescence at 2 eV (602 nm) at temperatures below 80 K manifests a high quality of diamonds. We demonstrate germanium and carbon isotope shifts in the fine structure of luminescence at 602 nm and its vibrational sid…
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We report on the high-pressure synthesis of novel nano- and microcrystalline high-quality diamonds with luminescent Ge-related centers. Observation of the four-line fine structure in luminescence at 2 eV (602 nm) at temperatures below 80 K manifests a high quality of diamonds. We demonstrate germanium and carbon isotope shifts in the fine structure of luminescence at 602 nm and its vibrational sideband which allows us to unambiguously associate the center with the germanium impurity entering into the diamond lattice. We show that there are two ground-state energy levels with the separation of 0.7 meV and two excited-state levels separated by 4.6 meV in the electronic structure of the center and suggest a split-vacancy structure of this center.
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Submitted 20 October, 2015;
originally announced October 2015.
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Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals
Authors:
V. G. Plotnichenko,
V. O. Nazaryants,
E. B. Kryukova,
V. V. Koltashev,
V. O. Sokolov,
E. M. Dianov,
A. V. Gusev,
V. A. Gavva,
T. V. Kotereva,
M. F. Churbanov
Abstract:
Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of…
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Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.
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Submitted 4 May, 2011;
originally announced May 2011.
