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Direct Observation of High-Spin States in Manganese Dimer and Trimer Cations by X-ray Magnetic Circular Dichroism Spectroscopy in an Ion Trap
Authors:
Vicente Zamudio-Bayer,
Konstantin Hirsch,
Andreas Langenberg,
Martin Kossick,
Arkadiusz Ławicki,
Akira Terasaki,
Bernd von Issendorff,
J. Tobias Lau
Abstract:
The electronic structure and magnetic moments of free Mn$_2^+$ and Mn$_3^+$ are characterized by $2p$ x-ray absorption and x-ray magnetic circular dichroism spectroscopy in a cryogenic ion trap that is coupled to a synchrotron radiation beamline. Our results show directly that localized magnetic moments of 5 $μ_B$ are created by $3d^5 (^6\mathrm{S})$ states at each ionic core, which are coupled in…
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The electronic structure and magnetic moments of free Mn$_2^+$ and Mn$_3^+$ are characterized by $2p$ x-ray absorption and x-ray magnetic circular dichroism spectroscopy in a cryogenic ion trap that is coupled to a synchrotron radiation beamline. Our results show directly that localized magnetic moments of 5 $μ_B$ are created by $3d^5 (^6\mathrm{S})$ states at each ionic core, which are coupled in parallel to form molecular high-spin states via indirect exchange that is mediated in both cases by a delocalized valence electron in a singly-occupied $4s$ derived orbital with an unpaired spin. This leads to total magnetic moments of 11 $μ_B$ for Mn$_2^+$ and 16 $μ_B$ for Mn$_3^+$, with no contribution of orbital angular momentum.
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Submitted 6 April, 2015;
originally announced April 2015.
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Coordination-driven magnetic-to-nonmagnetic transition in manganese doped silicon clusters
Authors:
V. Zamudio-Bayer,
L. Leppert,
K. Hirsch,
A. Langenberg,
J. Rittmann,
M. Kossick,
M. Vogel,
R. Richter,
A. Terasaki,
T. Möller,
B. v. Issendorff,
S. Kümmel,
J. T. Lau
Abstract:
The interaction of a single manganese impurity with silicon is analyzed in a combined experimental and theoretical study of the electronic, magnetic, and structural properties of manganese-doped silicon clusters. The structural transition from exohedral to endohedral do** coincides with a quenching of high-spin states. For all geometric structures investigated, we find a similar dependence of th…
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The interaction of a single manganese impurity with silicon is analyzed in a combined experimental and theoretical study of the electronic, magnetic, and structural properties of manganese-doped silicon clusters. The structural transition from exohedral to endohedral do** coincides with a quenching of high-spin states. For all geometric structures investigated, we find a similar dependence of the magnetic moment on the manganese coordination number and nearest neighbor distance. This observation can be generalized to manganese point defects in bulk silicon, whose magnetic moments fall within the observed magnetic-to-nonmagnetic transition, and which therefore react very sensitively to changes in the local geometry. The results indicate that high spin states in manganese-doped silicon could be stabilized by an appropriate lattice expansion.
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Submitted 27 February, 2013;
originally announced February 2013.
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A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids and its characterization applying symmetric and asymmetric potentials
Authors:
T. Brunner,
A. R. Mueller,
K. O'Sullivan,
M. C. Simon,
M. Kossick,
S. Ettenauer,
A. T. Gallant,
E. Mané,
D. Bishop,
M. Good,
G. Gratta,
J. Dilling
Abstract:
Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If two voltages of the same amplitude but opposite polarity are applied the gate is closed, and for identical (zero) poten…
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Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If two voltages of the same amplitude but opposite polarity are applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched from a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\,mm$^2$ with variable wire spacing down to 250\,\textmu m. By changing the grids the wire spacing can be varied easily. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate ions with different mass-to-charge ratios by their time-of-flight.
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Submitted 14 September, 2011; v1 submitted 20 July, 2011;
originally announced July 2011.
