Contactless photo-induced carrier density control in nanocrystal MoS2 hybrids
Authors:
Ilka Kriegel,
Nicholas J. Borys,
Kehao Zhang,
Adam W. Jansons,
Brandon M. Crockett,
Kristopher M. Koskela,
Edward S. Barnard,
Erika Penzo,
James E. Hutchison,
Joshua A. Robinson,
Liberato Manna,
P. James Schuck
Abstract:
The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their do** levels. We report a new photo-do** scheme that quasi-permanently dopes the monolayer MoS2 to extents competing with electrostatic gating. The photo-do** is achieved by coupling…
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The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their do** levels. We report a new photo-do** scheme that quasi-permanently dopes the monolayer MoS2 to extents competing with electrostatic gating. The photo-do** is achieved by coupling monolayer MoS2 with indium tin oxide nanocrystals that can store multiple electrons per nanocrystal after UV illumination. In the hybrid structure, the photo-generated valence band holes in the nanocrystals are filled by MoS2 electrons, photo-do** the MoS2 with holes. Reductions in carrier density by ~6x10^12 cm^-2 are observed, equivalent to the storage of ~40 electrons per nanocrystal. Long-range changes proliferating up to 40 micrometers away from the localized photodo** result from local bandstructure variations in MoS2. These studies reveal novel all-optical carrier density control in monolayer semiconductors, enabling remote-control of local charge density and innovative energy storage technologies.
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Submitted 28 January, 2019; v1 submitted 12 October, 2018;
originally announced October 2018.
