Showing 1–9 of 9 results for author: Koshi, N A

Tuning the Electronic and Magnetic Properties of Double Transition Metal MCrCT$_2$ (M = Ti, Mo) Janus MXenes for Enhanced Spintronics and Nanoelectronics

Authors: Swetarekha Ram, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: Janus MXenes, a new category of two-dimensional (2D) materials, shows promising potential for advances in optoelectronics, spintronics and nanoelectronics. Our theoretical investigations not only provide interesting insights but also highlight the promise of Janus MCrCT$_2$ (M = Ti, Mo; T = O, F, OH) MXenes for future spintronic applications and highlight the need for their synthesis. Electronic s… ▽ More Janus MXenes, a new category of two-dimensional (2D) materials, shows promising potential for advances in optoelectronics, spintronics and nanoelectronics. Our theoretical investigations not only provide interesting insights but also highlight the promise of Janus MCrCT$_2$ (M = Ti, Mo; T = O, F, OH) MXenes for future spintronic applications and highlight the need for their synthesis. Electronic structure analysis shows different metallic and semi-metallic properties: MoCrCF$_2$ exhibits metallic properties, TiCrC(OH)$_2$ and MoCrCO$_2$ exhibit near semi-metallicity with spin polarization values of 61\% and 86\%, respectively, while TiCrCO$_2$ and TiCrCF$_2$ are completely half-metallic with 100\% spin polarization at the Fermi level. All studied Janus MXenes exhibit intrinsic ferromagnetism, which is mainly attributed to the chromium (Cr) atoms, as shown by the spin density difference plots. Among them, the TiCrCO$_2$ monolayer stands out with the highest exchange constant and ferromagnetic transition temperature (T$_c$). Notably, the O-terminated Janus MXenes exhibit weak perpendicular magnetic anisotropy, in contrast to the in-plane anisotropy observed for F and OH-terminated MXenes, making them particularly interesting for future spintronic applications which we further demonstrate with micromagnetic simulation which reveal distinct current-induced switching behaviors in these Janus MXenes with different surface terminations. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Customizing PBE Exchange-Correlation functionals: A comprehensive approach for band gap prediction in diverse semiconductors

Authors: Satadeep Bhattacharjee, Namitha Anna Koshi, Seung-Cheol Lee

Abstract: Accurate band gap prediction in semiconductors is crucial for materials science and semiconductor technology advancements. This paper extends the Perdew-Burke-Ernzerhof (PBE) functional for a wide range of semiconductors, tackling the exchange and correlation enhancement factor complexities within Density Functional Theory (DFT). Our customized functionals offer a clearer and more realistic altern… ▽ More Accurate band gap prediction in semiconductors is crucial for materials science and semiconductor technology advancements. This paper extends the Perdew-Burke-Ernzerhof (PBE) functional for a wide range of semiconductors, tackling the exchange and correlation enhancement factor complexities within Density Functional Theory (DFT). Our customized functionals offer a clearer and more realistic alternative to DFT+U methods, which demand large negative U values for elements like Sulfur (S), Selenium (Se), and Phosphorus (P). Moreover, these functionals are more cost-effective than GW or Heyd-Scuseria-Ernzerhof (HSE) hybrid functional methods. Significantly, facilitates the way for unified workflows in analyzing electronic structure, dielectric constants, effective masses, and furthering transport and elastic properties, allowing for seamless calculations across various properties. We point out that such development is a key to generating comprehensive databases of critical material properties, a necessity in contemporary materials research. △ Less

Submitted 20 February, 2024; v1 submitted 20 November, 2023; originally announced November 2023.

Straintronics using the monolayer-Xene platform -- a comparative study

Authors: Swastik Sahoo, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band str… ▽ More Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band structure analysis, we show the effect of strain on the K-point, and calculate the directional piezoresistances for the buckled Xenes as per their critical strain limit. Further, we compare the relevant gauge factors, and their sinusoidal dependences on the transport angle akin to silicene and graphene. The strain-insensitive transport angles corresponding to the zero gauge factors are 81 degree and 34 degree for armchair and zigzag strains, respectively, for silicene and germanene. For stanene as the strain limit is extended to 10% and notable changes in the fundamental parameters, the critical angle for stanene along armchair and zigzag directions are 69 degree and 34 degree respectively. The small values of gauge factors are attributed to their stable Dirac cones and strain-independent valley degeneracies. We also explore conductance modulation, which is quantized in nature and exhibits a similar pattern with other transport parameters against a change in strain. Based on the obtained results, we propose the buckled Xenes as an interconnect in flexible electronics and are promising candidates for various applications in straintronics. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 16 pages, 9 figures

Iridium-do** as a strategy to realize visible light absorption and p-type behavior in BaTiO3

Authors: Sujana Chandrappa, Simon Joyson Galbao, P S Sankara Rama Krishnan, Namitha Anna Koshi, Srewashi Das, Stephen Nagaraju Myakala, Seung Cheol Lee, Arnab Dutta, Alexey Cherevan, Satadeep Bhattacharjee, Dharmapura H K Murthy

Abstract: BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via do** and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications.… ▽ More BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via do** and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications. In this work, a p-type BTO with visible-light absorption is realized via iridium do**. Detailed analysis using advanced spectroscopy tools and computational electronic structure analysis is used to rationalize the n- to p-type transition after Ir do**. Results offered mechanistic insight into the interplay between the dopant site occupancy, the dopant position within the band gap, and the defect chemistry affecting the carrier concentration. A decrease in the Ti3+ donor levels concentration and the mutually correlated oxygen vacancies upon Ir do** is attributed to the p-type behavior. Due to the formation of Ir3+ or Ir4+ in-gap energy levels within the forbidden region, the optical transition can be elicited from or to such levels resulting in visible-light absorption. This newly developed Ir-doped BTO can be a promising p-type perovskite-oxide with imminent applications in solar fuel generation, spintronics and optoelectronics. △ Less

Submitted 15 February, 2023; originally announced February 2023.

Comments: 21 pages, 8 figures

High-frequency complex impedance analysis of the two-dimensional semiconducting MXene-$Ti_2CO_2$

Authors: Anup Kumar Mandia, Rohit Kumar, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the sem… ▽ More The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the semiconducting oxygen-functionalized MXene-$Ti_2CO_2$ has led to the recent interests in high-performance thermoelectric and nanoelectronic devices. Apart from the above dc-transport applications, it is crucial to also understand ac-transport across them, given the growing interest in applications surrounding wireless communications and transparent conductors. In this work, we investigate using our recently developed $ab~initio$ transport model, the real and imaginary components of electron mobility and conductivity to conclusively depict carrier transport beyond the room temperature for frequency ranges upto the terahertz range. We also contrast the carrier mobility and conductivity with respect to the Drude's model to depict its inaccuracies for a meaningful comparison with experiments. Our calculations show the effect of acoustic deformation potential scattering, piezoelectric scattering, and polar optical phonon scattering mechanisms. Without relying on experimental data, our model requires inputs calculated from first principles using density functional theory. Our results set the stage for providing ab-initio based ac-transport calculations given the current research on MXenes for high frequency applications. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 9 pages, 10 figures

Can magneto-transport properties provide insight into the functional groups in semiconducting MXenes?

Authors: Namitha Anna Koshi, Anup Kumar Mandia, Bhaskaran Muralidharan, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical ph… ▽ More The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical phonon) scattering. Polar optical phonon (POP) scattering is the most significant mechanism in these MXenes. We observe that there is a window of carrier concentration where Hall factor acts dramatically; Sc2CF2 obtains an incredible high value of 2.49 while Sc2CO2 achieves a very small value of approximately 0.5, and Sc2C(OH)2 achieves the so called ideal value of 1. We propose in this paper that such Hall factor behaviour has significant promise in the field of surface group identification in MXenes, an issue that has long baffled researchers. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Electrical and magneto transport in 2D semiconducting MXene Ti2CO2

Authors: Anup Kumar Mandia, Namitha Anna Koshi, Bhaskaran Muralidharan, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and con… ▽ More The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and concentration, ranging from 0.2 to around 1.3 for weak magnetic fields. The electrical transport was modelled primarily using three scattering mechanisms: piezoelectric scattering, acoustic scattering, and polar optical phonons. Even though the mobility in this material is primarily limited by acoustic phonons, piezoelectric scattering also plays an important role which was not highlighted earlier. △ Less

Submitted 10 May, 2022; v1 submitted 23 March, 2022; originally announced March 2022.

Silicene for flexible electronics

Authors: Swastik Sahoo, Abhinaba Sinha, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices a… ▽ More The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 8 pages, 23 figures

Probing Photo-excited Charge Carrier Trap** and Defect Formation in Synergistic Do** of SrTiO3

Authors: Namitha Anna Koshi, Dharmapura H K Murthy, Sudip Chakraborty, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: Strontium titanate (SrTiO3) is widely used as a promising photocatalyst due to its unique band edge alignment with respect to the oxidation and reduction potential corresponding to oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). However, further enhancement of the photocatalytic activity in this material could be envisaged through the effective control of oxygen vacancy stat… ▽ More Strontium titanate (SrTiO3) is widely used as a promising photocatalyst due to its unique band edge alignment with respect to the oxidation and reduction potential corresponding to oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). However, further enhancement of the photocatalytic activity in this material could be envisaged through the effective control of oxygen vacancy states. This could substantially tune the photoexcited charge carrier trap** under the influence of elemental functionalization in SrTiO3, corresponding to the defect formation energy. The charge trap** states in SrTiO3 decrease through the substitutional do** in Ti sites with p-block elements like Aluminium (Al) with respect to the relative oxygen vacancies. With the help of electronic structure calculations based on density functional theory (DFT) formalism, we have explored the synergistic effect of do** with both Al and Iridium (Ir) in SrTiO3 from the perspective of defect formation energy, band edge alignment and the corresponding charge carrier recombination probability to probe the photoexcited charge carrier trap** that primarily governs the photocatalytic water splitting process. We have also systematically investigated the ratio-effect of Ir:Al functionalization on the position of acceptor levels lying between Fermi and conduction band in oxygen deficient SrTiO3, which governs the charge carrier recombination and therefore the corresponding photocatalytic efficiency. △ Less

Submitted 11 May, 2021; originally announced May 2021.