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Turnkey locking of quantum-dot lasers directly grown on Si
Authors:
Bozhang Dong,
Yating Wan,
Weng W. Chow,
Chen Shang,
Artem Prokoshin,
Rosalyn Koscica,
Heming Wang,
John E. Bowers
Abstract:
Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL)…
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Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.
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Submitted 3 January, 2024;
originally announced January 2024.
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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Authors:
Chen Shang,
Kaiyin Feng,
Eamonn T. Hughes,
Andrew Clark,
Mukul Debnath,
Rosalyn Koscica,
Gerald Leake,
Joshua Herman,
David Harame,
Peter Ludewig,
Yating Wan,
John E. Bowers
Abstract:
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region…
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Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
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Submitted 2 June, 2022;
originally announced June 2022.
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An unexplored MBE growth mode reveals new properties of superconducting NbN
Authors:
John Wright,
Celesta Chang,
Dacen Waters,
Felix Lüpke,
Lucy Raymond,
Rosalyn Koscica,
Guru Khalsa,
Randall Feenstra,
David Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal m…
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Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.
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Submitted 23 December, 2020; v1 submitted 21 August, 2020;
originally announced August 2020.
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Energy and RF Cavity Phase Symmetry Enforcement in Multi-turn ERL Models
Authors:
Rosalyn Koscica,
Nilanjan Banerjee,
Georg Heinz Hoffstaetter,
William Lou,
Gayathrini Premawardhana
Abstract:
In a multipass energy recovery linac (ERL), each cavity must regain all energy expended from beam acceleration during beam deceleration, and the beam should achieve specific energy targets during each loop that returns it to the linac. For full energy recovery, and for every returning beam to meet loop energy requirements, we must specify and maintain the phase and voltage of cavity fields in addi…
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In a multipass energy recovery linac (ERL), each cavity must regain all energy expended from beam acceleration during beam deceleration, and the beam should achieve specific energy targets during each loop that returns it to the linac. For full energy recovery, and for every returning beam to meet loop energy requirements, we must specify and maintain the phase and voltage of cavity fields in addition to selecting adequate flight times. These parameters are found with a full scale numerical optimization program. If we impose symmetry in time and energy during acceleration and deceleration, fewer parameters are needed, simplifying the optimization. As an example, we present symmetric models of the Cornell BNL ERL Test Accelerator (CBETA) with solutions that satisfy the optimization targets of loop energy and zero cavity loading. An identical cavity design and nearly uniform linac layout make CBETA a potential candidate for symmetric operation.
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Submitted 5 September, 2019; v1 submitted 8 April, 2019;
originally announced April 2019.
