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Fully printed flexible perovskite solar modules with improved energy alignment by tin oxide surface modification
Authors:
Lirong Dong,
Shudi Qiu,
Jose Garcia Cerrillo,
Michael Wagner,
Olga Kasian,
Sarmad Feroze,
Dongju Jang,
Chaohui Li,
Vincent M. Le Corre,
Kaicheng Zhang,
Heiko Peisert,
Felix U Kosasih,
Charline Arrive,
Tian Du,
Fu Yang,
Christoph J. Brabec,
Hans-Joachim Egelhaaf
Abstract:
Fully printed flexible perovskite solar cells (f-PSCs) show great potential for the commercialization of perovskite photovoltaics owing to their compatibility with high-throughput roll-to-roll (R2R) production. However, the challenge remains in the deficiency in controlling interfacial recombination losses of the functional layer, causing remarkable loss of power conversion efficiency (PCE) in ind…
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Fully printed flexible perovskite solar cells (f-PSCs) show great potential for the commercialization of perovskite photovoltaics owing to their compatibility with high-throughput roll-to-roll (R2R) production. However, the challenge remains in the deficiency in controlling interfacial recombination losses of the functional layer, causing remarkable loss of power conversion efficiency (PCE) in industrial production. Here, a fullerene-substituted alkylphosphonic acid dipole layer is introduced between the R2R-printed tin oxide electron transport layer and the perovskite active layer to reduce the energetic barrier and to suppress surface recombination at the buried interface. The resulting f-PSCs exhibit a PCE of 17.0% with negligible hysteresis, retain 95% of their initial PCE over 3000 bending cycles and achieve a T95 lifetime of 1200 h under 1 sun and 65 degreeC in nitrogen atmosphere. Moreover, the fully printed flexible perovskite solar mini-modules (f-PSMs) with a 20.25 cm2 aperture area achieve a PCE of 11.6%. The encapsulated f-PSMs retain 90% of their initial PCE after 500 h damp-heat testing at 65 degreeC and 85% relative humidity (ISOS-D3). This work marks an important progress toward the realization of efficient and stable flexible perovskite photovoltaics for commercialization.
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Submitted 5 June, 2024;
originally announced June 2024.
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Reduced Recombination via Tunable Surface Fields in Perovskite Solar Cells
Authors:
Dane W. deQuilettes,
Jason Jungwan Yoo,
Roberto Brenes,
Felix Utama Kosasih,
Madeleine Laitz,
Benjia Dak Dou,
Daniel J. Graham,
Kevin Ho,
Seong Sik Shin,
Caterina Ducati,
Moungi Bawendi,
Vladimir Bulović
Abstract:
The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering has become an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-2D heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) > 22% and has enabl…
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The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering has become an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-2D heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) > 22% and has enabled single-junction PV devices to reach 25.7%, yet a fundamental understanding to how these treatments function is still generally lacking. This has established a bottleneck for maximizing beneficial improvements as no concrete selection and design rules currently exist. Here we uncover a new type of tunable passivation strategy and mechanism found in perovskite PV devices that were the first to reach the > 25% PCE milestone, which is enabled by surface treating a bulk perovskite layer with hexylammonium bromide (HABr). We uncover the simultaneous formation of an iodide-rich 2D layer along with a Br halide gradient achieved through partial halide exchange that extends from defective surfaces and grain boundaries into the bulk layer. We demonstrate and directly visualize the tunability of both the 2D layer thickness, halide gradient, and band structure using a unique combination of depth-sensitive nanoscale characterization techniques. We show that the optimization of this interface can extend the charge carrier lifetime to values > 30 μs, which is the longest value reported for a direct bandgap semiconductor (GaAs, InP, CdTe) over the past 50 years. Importantly, this work reveals an entirely new strategy and knob for optimizing and tuning recombination and charge transport at semiconductor interfaces and will likely establish new frontiers in achieving the next set of perovskite device performance records.
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Submitted 9 November, 2022; v1 submitted 15 April, 2022;
originally announced April 2022.
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Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation
Authors:
Jiangbin Zhang,
Moritz H. Futscher,
Vincent Lami,
Felix U. Kosasih,
Changsoon Cho,
Qinying Gu,
Aditya Sadhanala,
Andrew J. Pearson,
Bin Kan,
Giorgio Divitini,
Xiangjian Wan,
Daniel Credgington,
Neil C. Greenham,
Yongsheng Chen,
Caterina Ducati,
Bruno Ehrler,
Yana Vaynzof,
Richard H. Friend,
Artem A. Bakulin
Abstract:
Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared from sequentially deposited donor and acceptor layers (sq-BHJ) have recently been promising to be highly efficient, environmentally friendly, and compatible with large area and roll-to-toll fabrication. However, the related photophysics at donor-acceptor interface and the vertical heterogeneity of donor-acceptor distribution, cri…
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Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared from sequentially deposited donor and acceptor layers (sq-BHJ) have recently been promising to be highly efficient, environmentally friendly, and compatible with large area and roll-to-toll fabrication. However, the related photophysics at donor-acceptor interface and the vertical heterogeneity of donor-acceptor distribution, critical for exciton dissociation and device performance, are largely unexplored. Herein, steady-state and time-resolved optical and electrical techniques are employed to characterize the interfacial trap states. Correlation with the luminescent efficiency of interfacial states and its non-radiative recombination, interfacial trap states are characterized to be about 50% more populated in the sq-BHJ than as-cast BHJ (c-BHJ), which probably limits the device voltage output. Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. From the proposed "needle" model, the high exciton dissociation efficiency is rationalized. Our study highlights the promise of sequential deposition to fabricate efficient solar cells, and points towards improving the voltage output and overall device performance via eliminating interfacial trap states.
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Submitted 30 July, 2020;
originally announced July 2020.
