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Experimental Validation of Ultrasound Beamforming with End-to-End Deep Learning for Single Plane Wave Imaging
Authors:
Ryan A. L. Schoop,
Gijs Hendriks,
Tristan van Leeuwen,
Chris L. de Korte,
Felix Lucka
Abstract:
Ultrafast ultrasound imaging insonifies a medium with one or a combination of a few plane waves at different beam-steered angles instead of many focused waves. It can achieve much higher frame rates, but often at the cost of reduced image quality. Deep learning approaches have been proposed to mitigate this disadvantage, in particular for single plane wave imaging. Predominantly, image-to-image po…
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Ultrafast ultrasound imaging insonifies a medium with one or a combination of a few plane waves at different beam-steered angles instead of many focused waves. It can achieve much higher frame rates, but often at the cost of reduced image quality. Deep learning approaches have been proposed to mitigate this disadvantage, in particular for single plane wave imaging. Predominantly, image-to-image post-processing networks or fully learned data-to-image neural networks are used. Both construct their map** purely data-driven and require expressive networks and large amounts of training data to perform well. In contrast, we consider data-to-image networks which incorporate a conventional image formation techniques as differentiable layers in the network architecture. This allows for end-to-end training with small amounts of training data. In this work, using f-k migration as an image formation layer is evaluated in-depth with experimental data. We acquired a data collection designed for benchmarking data-driven plane wave imaging approaches using a realistic breast mimicking phantom and an ultrasound calibration phantom. The evaluation considers global and local image similarity measures and contrast, resolution and lesion detectability analysis. The results show that the proposed network architecture is capable of improving the image quality of single plane wave images on all evaluation metrics. Furthermore, these image quality improvements can be achieved with surprisingly little amounts of training data.
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Submitted 22 April, 2024;
originally announced April 2024.
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Simultaneous Coherent and Displacement Compounding for 2D Noninvasive Carotid Strain Imaging: a Proof of Principle Study
Authors:
Moein Mozaffarzadeh,
Anne E. C. M. Saris,
Jan Menssen,
Chris L. de Korte
Abstract:
Arteriosclerosis results from lipid buildup in artery walls, leading to plaque formation, and is a leading cause of death. Plaque rupture can cause blood clots that might lead to a stroke. Distinguishing plaque types is a challenge, but ultrasound elastography can help by assessing plaque composition based on strain values. Since the artery has a circular structure, an accurate axial and lateral d…
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Arteriosclerosis results from lipid buildup in artery walls, leading to plaque formation, and is a leading cause of death. Plaque rupture can cause blood clots that might lead to a stroke. Distinguishing plaque types is a challenge, but ultrasound elastography can help by assessing plaque composition based on strain values. Since the artery has a circular structure, an accurate axial and lateral displacement strategy is needed to derive the radial and circumferential strains. A high precision lateral displacement is challenging due to the lack of phase information in the lateral direction of the beamformed RF data. Previously, our group has developed a compounding technique in which the lateral displacement is estimated using tri-angulation of the axial displacement estimated from transmitting and beamforming ultrasound beams at +-20 degree. However, its applicability to in vivo is challenging due to the imaging noise and the low contrast of the arterial wall, caused by a single plane wave transmission. In this paper, we combine our displacement compounding with coherent compounding. Instead of transmitting a single plane wave, multiple plane waves are transmitted at certain angles with respect to the angle of the beamforming grids, and then the backscattered wavefronts are beamformed and coherently compounded on the center of the transmit beams (-20, +20 and 0 degree). ...
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Submitted 16 January, 2024;
originally announced January 2024.
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Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations
Authors:
K. Lizárraga,
P. Llontop,
L. A. Enrique-Morán,
M. Piñeiro,
E. Perez,
E. Serquen,
A. Tejada,
F. Ruske,
L. Korte,
J. A. Guerra
Abstract:
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic pote…
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One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic potentials and electro-hole-polaron interactions. However, exciton binding energies obtained from measured data often vary strongly depending on the chosen model. Here, we propose an alternative and rather simple approach, which has previously been successful in the determination of the optical bandgap of amorphous, direct and indirect semiconductors, based on the bands-fluctuations (BF) model. In this model, the fluctuations due to disorder, temperature or lattice vibrations give rise to the well known exponential distribution of band tail states (Urbach tails). This analysis results in an analytic equation with 5 parameters only. The binding energies and optical bandgaps of GaAs and the family of tri-halide perovskites ($\textrm{MAPbX}_{3}$), $\textrm{X=Br,I,Cl}$, over a wide range of temperatures, are obtained with this model. The results for the bandgap, linewidth and exciton binding energy are in good agreement with previous reports. Moreover, due to the polar nature of perovskites, the obtained binding energies can be compared with the ones computed with a theoretical model for polar materials via a model proposed by Kane et al. In this model, the exciton is surrounded by a cloud of virtual phonons interacting via the Fr$\ddot{\textrm{o}}$lich interaction. As a consequence, the upper bound for the binding energy of the exciton-polaron system is calculated. Coincidentally, these results are in good agreement with the optical constants obtained with the EBF model.
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Submitted 29 June, 2023;
originally announced June 2023.
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New Optical Models for the Accurate Description of the Electrical Permittivity in Direct and Indirect Semiconductors
Authors:
K. Lizárraga,
L. A. Enrique-Morán,
A. Tejada,
M. Piñeiro,
P. Llontop,
E. Serquen,
E. Perez,
L. Korte,
J. A. Guerra
Abstract:
We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect…
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We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behaviour due to electronic transitions above the fundamental region. We apply and test our models on optical data of direct (MAPbI$_{3}$, GaAs and InP), indirect (GaP and c-Si), and amorphous (a-Si) semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our models with other similarly inspired models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.
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Submitted 7 December, 2022;
originally announced December 2022.
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Single Plane-Wave Imaging using Physics-Based Deep Learning
Authors:
Georgios Pilikos,
Chris L. de Korte,
Tristan van Leeuwen,
Felix Lucka
Abstract:
In plane-wave imaging, multiple unfocused ultrasound waves are transmitted into a medium of interest from different angles and an image is formed from the recorded reflections. The number of plane waves used leads to a trade-off between frame-rate and image quality, with single-plane-wave (SPW) imaging being the fastest possible modality with the worst image quality. Recently, deep learning method…
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In plane-wave imaging, multiple unfocused ultrasound waves are transmitted into a medium of interest from different angles and an image is formed from the recorded reflections. The number of plane waves used leads to a trade-off between frame-rate and image quality, with single-plane-wave (SPW) imaging being the fastest possible modality with the worst image quality. Recently, deep learning methods have been proposed to improve ultrasound imaging. One approach is to use image-to-image networks that work on the formed image and another is to directly learn a map** from data to an image. Both approaches utilize purely data-driven models and require deep, expressive network architectures, combined with large numbers of training samples to obtain good results. Here, we propose a data-to-image architecture that incorporates a wave-physics-based image formation algorithm in-between deep convolutional neural networks. To achieve this, we implement the Fourier (FK) migration method as network layers and train the whole network end-to-end. We compare our proposed data-to-image network with an image-to-image network in simulated data experiments, mimicking a medical ultrasound application. Experiments show that it is possible to obtain high-quality SPW images, almost similar to an image formed using 75 plane waves over an angular range of $\pm$16$^\circ$. This illustrates the great potential of combining deep neural networks with physics-based image formation algorithms for SPW imaging.
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Submitted 8 September, 2021;
originally announced September 2021.
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Imaging of bandtail states in silicon heterojunction solar cells
Authors:
M. Y. Teferi,
H. Malissa,
A. B. Morales-Vilches,
C. T. Trinh,
L. Korte,
B. Stannowski,
C. C. Williams,
C. Boehme,
K. Lips
Abstract:
Silicon heterojunction (SHJ) solar cells represent a promising technological approach towards higher photovoltaics efficiencies and lower fabrication cost. While the device physics of SHJ solar cells have been studied extensively in the past, the ways in which nanoscopic electronic processes such as charge-carrier generation, recombination, trap**, and percolation affect SHJ device properties ma…
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Silicon heterojunction (SHJ) solar cells represent a promising technological approach towards higher photovoltaics efficiencies and lower fabrication cost. While the device physics of SHJ solar cells have been studied extensively in the past, the ways in which nanoscopic electronic processes such as charge-carrier generation, recombination, trap**, and percolation affect SHJ device properties macroscopically have yet to be fully understood. We report the study of atomic scale current percolation at state-of-the-art a-Si:H/c-Si heterojunction solar cells under ambient operating conditions, revealing the profound complexity of electronic SHJ interface processes. Using conduction atomic force microscopy (cAFM), it is shown that the macroscopic current-voltage characteristics of SHJ solar cells is governed by the average of local nanometer-sized percolation pathways associated with bandtail states of the doped a-Si:H selective contact leading to above bandgap open circuit voltages ($V_{\mbox{OC}}$) as high as 1.2 V ($V_{\mbox{OC}}>e E_{\mbox{gap}}^{\mbox{Si}}$). This is not in violation of photovoltaic device physics but a consequence of the nature of nanometer-scale charge percolation pathways which originate from trap-assisted tunneling causing dark leakage current. We show that the broad distribution of local photovoltage is a direct consequence of randomly trapped charges at a-Si:H dangling bond defects which lead to strong local potential fluctuations and induce random telegraph noise of the dark current.
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Submitted 26 August, 2020;
originally announced August 2020.
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Automated interpretation of prenatal ultrasound using a predefined acquisition protocol in resource-limited countries
Authors:
Thomas L. A. van den Heuvel,
Chris L. de Korte,
Bram van Ginneken
Abstract:
In this study, we combine a standardized acquisition protocol with image analysis algorithms to investigate if it is possible to automatically detect maternal risk factors without a trained sonographer. The standardized acquisition protocol can be taught to any health care worker within two hours. This protocol was acquired from 280 pregnant women at St.\ Luke's Catholic Hospital, Wolisso, Ethiopi…
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In this study, we combine a standardized acquisition protocol with image analysis algorithms to investigate if it is possible to automatically detect maternal risk factors without a trained sonographer. The standardized acquisition protocol can be taught to any health care worker within two hours. This protocol was acquired from 280 pregnant women at St.\ Luke's Catholic Hospital, Wolisso, Ethiopia. A VGG-like network was used to perform a frame classification for each frame within the acquired ultrasound data. This frame classification was used to automatically determine the number of fetuses and the fetal presentation. A U-net was trained to measure the fetal head circumference in all frames in which the VGG-like network detected a fetal head. This head circumference was used to estimate the gestational age. The results show that it possible automatically determine gestational age and determine fetal presentation and the potential to detect twin pregnancies using the standardized acquisition protocol.
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Submitted 29 July, 2019;
originally announced July 2019.
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Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells
Authors:
Aniela Czudek,
Katrin Hirselandt,
Lukas Kegelmann,
Amran Al-Ashouri,
Marko Jošt,
Weiwei Zuo,
Antonio Abate,
Lars Korte,
Steve Albrecht,
Janardan Dagar,
Eva L. Unger
Abstract:
Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the de…
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Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the device performance parameters, which are reliable only if extracted from current-voltage curves collected under steady-state conditions. We show that is possible to determine the shorter settling or delay time suitable to carry out J-V measurements under steady-state conditions by analysis of the transient device response around the MPP. This procedure proves to be more time-efficient than measurement J-V measurements at a variety of scan rates. Furthermore, the generic algorithm presented here can be implemented to assess changes in the dynamic response of devices during long-term device ageing.
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Submitted 12 June, 2019;
originally announced June 2019.
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Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells
Authors:
Sihua Zhong,
Monica Morales-Masis,
Mathias Mews,
Lars Korte,
Quentin Jeangros,
Weiliang Wu,
Mathieu Boccard,
Christophe Ballif
Abstract:
In recent years, considerable efforts have been devoted to develo** novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study, ZnO:Al (AZO) is co-sputtered with SiO2 to form AZO:SiO2 films with different SiO2 content. These nanometer-scale films, deposited on top of thin intrinsic hydrogena…
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In recent years, considerable efforts have been devoted to develo** novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study, ZnO:Al (AZO) is co-sputtered with SiO2 to form AZO:SiO2 films with different SiO2 content. These nanometer-scale films, deposited on top of thin intrinsic hydrogenated amorphous silicon films and capped with low-work-function metal (such as Al and Mg), are demonstrated to function effectively as electron-selective contacts in c-Si solar cells. On the one hand, AZO:SiO2 plays an important role in such electron-selective contact and its thickness is a critical parameter, thickness of 2 nm showing the best. On the other hand, at the optimal thickness of AZO:SiO2, the open circuit voltage (VOC) of the solar cells is found to be relatively insensitive to either the work function or the band gap of AZO:SiO2. Whereas, regarding the fill factor (FF), AZO without SiO2 content exhibits to be the optimal choice. By using AZO/Al as electron-selective contact, we successfully realize a 19.5%-efficient solar cell with VOC over 700 mV and FF around 75%, which is the best result among c-Si solar cells using ZnO as electron-selective contact. Also, this work implies that efficient carrier-selective film can be made by magnetron sputtering method.
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Submitted 7 February, 2019;
originally announced February 2019.
