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Phononic Crystals in Superfluid Thin-Film Helium
Authors:
Alexander Rolf Korsch,
Niccolò Fiaschi,
Simon Gröblacher
Abstract:
In recent years, nanomechanical oscillators in thin films of superfluid helium have attracted attention in the field of optomechanics due to their exceptionally low mechanical dissipation and optical scattering. Mechanical excitations in superfluid thin films - so-called third sound waves - can interact with the optical mode of an optical microresonator by modulation of its effective refractive in…
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In recent years, nanomechanical oscillators in thin films of superfluid helium have attracted attention in the field of optomechanics due to their exceptionally low mechanical dissipation and optical scattering. Mechanical excitations in superfluid thin films - so-called third sound waves - can interact with the optical mode of an optical microresonator by modulation of its effective refractive index enabling optomechanical coupling. Strong confinement of third sound modes enhances their intrinsic mechanical non-linearity paving the way for strong phonon-phonon interactions with applications in quantum optomechanics. Here, we realize a phononic crystal cavity confining third sound modes in a superfluid helium film to length scales close to the third sound wavelength. A few nanometer thick superfluid film is self-assembled on top of a silicon nanobeam optical resonator. The periodic patterning of the silicon material creates a periodic modulation of the superfluid film leading to the formation of a phononic band gap. By engineering the geometry of the silicon nanobeam, the phononic band gap allows the confinement of a localized phononic mode.
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Submitted 28 February, 2024;
originally announced February 2024.
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Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress
Authors:
Natasha Tomm,
Alexander R. Korsch,
Alisa Javadi,
Daniel Najer,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distrib…
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A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.
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Submitted 18 February, 2021;
originally announced February 2021.
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Suppression of surface-related loss in a gated semiconductor microcavity
Authors:
Daniel Najer,
Natasha Tomm,
Alisa Javadi,
Alexander R. Korsch,
Benjamin Petrak,
Daniel Riedel,
Vincent Dolique,
Sascha R. Valentin,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer…
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We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.
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Submitted 17 February, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells
Authors:
G. N. Nguyen,
A. R. Korsch,
M. Schmidt,
C. Ebler,
P. A. Labud,
R. Schott,
P. Lochner,
F. Brinks,
A. D. Wieck,
A. Ludwig
Abstract:
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this probl…
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Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures.
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Submitted 30 September, 2020; v1 submitted 29 September, 2020;
originally announced September 2020.
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A bright and fast source of coherent single photons
Authors:
Natasha Tomm,
Alisa Javadi,
Nadia O. Antoniadis,
Daniel Najer,
Matthias C. Löbl,
Alexander R. Korsch,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many photons and therefore place stringent requirements on the efficiency of single photon creation. The scaling on efficiency is an exponential function of the number…
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A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many photons and therefore place stringent requirements on the efficiency of single photon creation. The scaling on efficiency is an exponential function of the number of photons. Schemes taking full advantage of quantum superpositions also depend sensitively on the coherence of the photons, i.e. their indistinguishability. It is therefore crucial to maintain the coherence over long strings of photons. Here, we report a single photon source with an especially high system efficiency: a photon is created on-demand at the output of the final optical fibre with a probability of 57%. The coherence of the photons is very high and is maintained over a stream consisting of thousands of photons; the repetition rate is in the GHz regime. We break with the established semiconductor paradigms, such as micropillars, photonic crystal cavities and waveguides. Instead, we employ gated quantum dots in an open, tunable microcavity. The gating ensures low-noise operation; the tunability compensates for the lack of control in quantum dot position and emission frequency; the output is very well-matched to a single-mode fibre. An increase in efficiency over the state-of-the-art by more than a factor of two, as reported here, will result in an enormous decrease in run-times, by a factor of $10^{7}$ for 20 photons.
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Submitted 24 July, 2020;
originally announced July 2020.
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Single-electron charge sensing in self-assembled quantum dots
Authors:
Haruki Kiyama,
Alexander Korsch,
Naomi Nagai,
Yasushi Kanai,
Kazuhiko Matsumoto,
Kazuhiko Hirakawa,
Akira Oiwa
Abstract:
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interfa…
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Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.
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Submitted 7 December, 2018;
originally announced December 2018.
