Showing 1–10 of 10 results for author: Korolev, D

A hybrid physics-informed neural network based multiscale solver as a partial differential equation constrained optimization problem

Authors: Michael Hintermüller, Denis Korolev

Abstract: In this work, we study physics-informed neural networks (PINNs) constrained by partial differential equations (PDEs) and their application in approximating multiscale PDEs. From a continuous perspective, our formulation corresponds to a non-standard PDE-constrained optimization problem with a PINN-type objective. From a discrete standpoint, the formulation represents a hybrid numerical solver that… ▽ More In this work, we study physics-informed neural networks (PINNs) constrained by partial differential equations (PDEs) and their application in approximating multiscale PDEs. From a continuous perspective, our formulation corresponds to a non-standard PDE-constrained optimization problem with a PINN-type objective. From a discrete standpoint, the formulation represents a hybrid numerical solver that utilizes both neural networks and finite elements. We propose a function space framework for the problem and develop an algorithm for its numerical solution, combining an adjoint-based technique from optimal control with automatic differentiation. The multiscale solver is applied to a heat transfer problem with oscillating coefficients, where the neural network approximates a fine-scale problem, and a coarse-scale problem constrains the learning process. We show that incorporating coarse-scale information into the neural network training process through our modelling framework acts as a preconditioner for the low-frequency component of the fine-scale PDE, resulting in improved convergence properties and accuracy of the PINN method. The relevance of the hybrid solver to numerical homogenization is discussed. △ Less

Submitted 7 November, 2023; v1 submitted 8 September, 2023; originally announced September 2023.

Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: effect of irradiation dose and oxide film thickness

Authors: Alena Nikolskaya, Alexey Belov, Alexey Mikhaylov, Anton Konakov, David Tetelbaum, Dmitry Korolev

Abstract: The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been demonstrated. In this work, the luminescent properties of SiO2/Si structures irradiated with Kr+ ions at different doses and annealed at 800 °C have b… ▽ More The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been demonstrated. In this work, the luminescent properties of SiO2/Si structures irradiated with Kr+ ions at different doses and annealed at 800 °C have been systematically investigated. For such structures, a photoluminescence line at ~ 1240 nm is observed and associated with the formation of hexagonal 9R-Si phase inclusions. It is found that the variation in the thickness of oxide film and the relative position of ion distribution profile and film / substrate interface leads to a regular change in the luminescence intensity. The nature of the observed dependencies is discussed as related to the interplay between the desirable 3C-Si -> 9R-Si structural transition and generation of nonradiative defects. The revealed regularities suggest optimal ion irradiation conditions for synthesis of optically active 9R-Si phase in diamond-like silicon. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Stochastic Memristive Interface between Electronic FitzHugh-Nagumo Neurons

Authors: S. Gerasimova, A. Belov, D. Korolev, D. Guseinov, A. Lebedeva, M. Koryazhkina, A. Mikhaylov, V. Kazantsev, A. N. Pisarchik

Abstract: The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic circuit based on the FitzHugh-Nagumo model and metal-oxide memristive device. The hardware-software complex based on commercial data acquisition system is implemente… ▽ More The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic circuit based on the FitzHugh-Nagumo model and metal-oxide memristive device. The hardware-software complex based on commercial data acquisition system is implemented for the imitation of signal from presynaptic neuron`s membrane and synaptic signal transmission between neurons. The main advantage of our system is that it uses real time dynamics of memristive device. Electrical response of memristive device shows its behavioral flexibility that allows presenting a memristive device as an active synapse. This means an internal adjustment of the parameters of memristive device that leads to modulation of neuron-like signals. Physics-based dynamical model of memristor is developed in MATLAB for numerical simulation of such a memristive interface to describe and predict experimentally observed regularities of synchronization of neuron-like oscillators. FitzHugh-Nagumo circuits time series with a linear or stepwise increase in the signal amplitude are used to study the memristor response and coupling of neuron-like oscillators taking into account the stochasticity of memristor model to compare the numerical and experimental data. The observed forced synchronization modes characterize the dynamic complexity of the memristive device, which requires further description using high-order dynamical models. The developed memristive interface will provide high efficiency in the imitation of the synaptic connection due to its stochastic nature and can be used to increase the flexibility of neuronal connections for neuroprosthetic challenges. △ Less

Submitted 28 February, 2021; originally announced March 2021.

Ion-Beam Modification of Metastable Gallium Oxide Polymorphs

Authors: D. I. Tetelbaum, A. A. Nikolskaya, D. S. Korolev, A. I. Belov, V. N. Trushin, Yu. A. Dudin, A. N. Mikhaylov, A. I. Pechnikov, M. P. Scheglov, V. I. Nikolaev, D. Gogova

Abstract: Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of i… ▽ More Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion do**, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient do** strategies. △ Less

Submitted 27 February, 2021; originally announced March 2021.

Ion implantation in \b{eta}-Ga2O3: physics and technology

Authors: Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev, Anton Stepanov, Dmitry Nikolichev, Alexey Mikhaylov, David Tetelbaum, Aleksei Almaev, Charles Airton Bolzan, Antônio Jr Buaczik, Raquel Giulian, Pedro Luis Grande, Ashok Kumar, Mahesh Kumar, Daniela Gogova

Abstract: Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fiel… ▽ More Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed. △ Less

Submitted 26 February, 2021; originally announced February 2021.

A space-time certified reduced basis method for quasilinear parabolic partial differential equations

Authors: Michael Hinze, Denis Korolev

Abstract: In this paper, we propose a certified reduced basis (RB) method for quasilinear parabolic problems. The method is based on a space-time variational formulation. We provide a residual-based a-posteriori error bound on a space-time level and the corresponding efficiently computable estimator for the certification of the method. We use the Empirical Interpolation method (EIM) to guarantee the efficie… ▽ More In this paper, we propose a certified reduced basis (RB) method for quasilinear parabolic problems. The method is based on a space-time variational formulation. We provide a residual-based a-posteriori error bound on a space-time level and the corresponding efficiently computable estimator for the certification of the method. We use the Empirical Interpolation method (EIM) to guarantee the efficient offline-online computational procedure. The error of the EIM method is then rigorously incorporated into the certification procedure. The Petrov-Galerkin finite element discretization allows to benefit from the Crank-Nicolson interpretation of the discrete problem and to use a POD-Greedy approach to construct the reduced-basis spaces of small dimensions. It computes the reduced basis solution in a time-marching framework while the RB approximation error in a space-time norm is controlled by the estimator. Therefore the proposed method incorporates a POD-Greedy approximation into a space-time certification. △ Less

Submitted 18 December, 2020; v1 submitted 1 April, 2020; originally announced April 2020.

Comments: Typos are corrected, additional 2D example is added

Design and Simulation of Memristor-Based Artificial Neural Network for Bidirectional Adaptive Neural Interface

Authors: Sergey Shchanikov, Anton Zuev, Ilya Bordanov, Sergey Danilin, Dmitry Korolev, Alexey Belov, Yana Pigareva, Alexey Pimashkin, Alexey Mikhaylov, Victor Kazantsev

Abstract: This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory, simulation methodology and experiment design. The tolerances analysis and synthesis process is performed for the ANNM hardware implementation on the basis of t… ▽ More This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory, simulation methodology and experiment design. The tolerances analysis and synthesis process is performed for the ANNM hardware implementation on the basis of two arrays of memristive microdevices in the original 16x16 cross-bar topology being a component of bidirectional adaptive neural interface for automatic registration and stimulation of bioelectrical activity of a living neuronal culture used in robotics control system. The ANNM is trained for solving a nonlinear classification problem of stable information characteristics registered in the culture grown on a multi-electrode array. Memristive devices are fabricated on the basis of a newly engineered Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti multilayer structure, which contains self-organized interface oxide layers, nanocrystals and is specially developed to obtain robust resistive switching with low variation of parameters. An array of memristive devices is mounted into a standard metal-ceramic package and can be easily integrated into the neurointerface circuit. Memristive devices demonstrate bipolar switching of anionic type between the high-resistance state and low-resistance state and can be programmed to set the intermediate resistive states with a desired accuracy. The ANNM tuning, testing and control are implemented by the FPGA-based control subsystem. All developed models and algorithms are implemented as Python-based software. △ Less

Submitted 31 March, 2020; originally announced April 2020.

Comments: 24 pages, 8 figures, Supplementary Material

Reduced basis methods for quasilinear elliptic PDEs with applications to permanent magnet synchronous motors

Authors: Michael Hinze, Denis Korolev

Abstract: In this paper, we propose a certified reduced basis (RB) method for quasilinear elliptic problems together with its application to nonlinear magnetostatics equations, where the later model permanent magnet synchronous motors (PMSM). The parametrization enters through the geometry of the domain and thus, combined with the nonlinearity, drives our reduction problem. We provide a residual-based a-pos… ▽ More In this paper, we propose a certified reduced basis (RB) method for quasilinear elliptic problems together with its application to nonlinear magnetostatics equations, where the later model permanent magnet synchronous motors (PMSM). The parametrization enters through the geometry of the domain and thus, combined with the nonlinearity, drives our reduction problem. We provide a residual-based a-posteriori error bound which, together with the Greedy approach, allows to construct reduced-basis spaces of small dimensions. We use the empirical interpolation method (EIM) to guarantee the efficient offline-online computational procedure. The reduced-basis solution is then obtained with the surrogate of the Newton's method. The numerical results indicate that the proposed reduced-basis method provides a significant computational gain, compared to a finite element method. △ Less

Submitted 2 July, 2020; v1 submitted 11 February, 2020; originally announced February 2020.

Towards Hardware Implementation of Double-Layer Perceptron Based on Metal-Oxide Memristive Nanostructures

Authors: A. N. Mikhaylov, O. A. Morozov, P. E. Ovchinnikov, I. N. Antonov, A. I. Belov, D. S. Korolev, M. N. Koryazhkina, A. N. Sharapov, E. G. Gryaznov, O. N. Gorshkov, V. B. Kazantsev

Abstract: Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of neural network is implemented as a double-layer perceptron with a weight matrix composed of 32 memristive devices. The network training algorithm takes into ac… ▽ More Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of neural network is implemented as a double-layer perceptron with a weight matrix composed of 32 memristive devices. The network training algorithm takes into account technological variations of the parameters of memristive nanostructures. Despite the limited size of weight matrix the developed neural network model is well scalable and capable of solving nonlinear classification problems. △ Less

Submitted 3 November, 2017; originally announced November 2017.

Histogram Arithmetic under Uncertainty of Probability Density Function

Authors: V. N. Petrushin, E. V. Nikulchev, D. A. Korolev

Abstract: In this article we propose a method of performing arithmetic operations on varia-bles with unknown distribution. The approach to the evaluation results of arithme-tic operations can select probability intervals of the algebraic equations and their systems solutions, of differential equations and their systems in case of histogram evaluation of the empirical density distributions of random paramete… ▽ More In this article we propose a method of performing arithmetic operations on varia-bles with unknown distribution. The approach to the evaluation results of arithme-tic operations can select probability intervals of the algebraic equations and their systems solutions, of differential equations and their systems in case of histogram evaluation of the empirical density distributions of random parameters. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Comments: 10 pages

Journal ref: Applied Mathematical Sciences 9(2015) 7043-7052