Showing 1–50 of 72 results for author: Korn, T

Rapid spin depolarization in the layered 2D Ruddlesden Popper perovskite (BA)(MA)PbI

Authors: Michael Kempf, Philipp Moser, Maximilian Tomoscheit, Julian Schröer, Jean-Christophe Blancon, Rico Schwartz, Swarup Deb, Aditya Mohite, Andreas V. Stier, Jonathan J. Finley, Tobias Korn

Abstract: We report temperature-dependent spectroscopy on the layered (n=4) two-dimensional (2D) Ruddlesden-Popper perovskite (BA)(MA)PbI. Helicity-resolved steady-state photoluminescence (PL) reveals no optical degree of polarization. Time-resolved PL shows a photocarrier lifetime on the order of nanoseconds. From simultaneaously recorded time-resolved differential reflectivity (TR$Δ$R) and time-resolved K… ▽ More We report temperature-dependent spectroscopy on the layered (n=4) two-dimensional (2D) Ruddlesden-Popper perovskite (BA)(MA)PbI. Helicity-resolved steady-state photoluminescence (PL) reveals no optical degree of polarization. Time-resolved PL shows a photocarrier lifetime on the order of nanoseconds. From simultaneaously recorded time-resolved differential reflectivity (TR$Δ$R) and time-resolved Kerr ellipticity (TRKE), a photocarrier lifetime of a few nanoseconds and a spin dephasing time on the order of picoseconds was found. This stark contrast in lifetimes clearly explains the lack of spin polarization in steady-state PL. While we observe clear temperature-dependent effects on the PL dynamics that can be related to structural dynamics, the spin dephasing is nearly T-independent. Our results highlight that spin dephasing in 2D (BA)(MA)PbI occurs at time scales faster than the exciton recombination time, which poses a bottleneck for applications aimingto utilize this degree of freedom. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Journal ref: ACS nano 2023

Emergent Trion-Phonon Coupling in Atomically-Reconstructed MoSe$_2$-WSe$_2$ Heterobilayers

Authors: Sebastian Meier, Yaroslav Zhumagulov, Matthias Dietl, Philipp Parzefall, Michael Kempf, Johannes Holler, Philipp Nagler, Paulo E. Faria Junior, Jaroslav Fabian, Tobias Korn, Christian Schüller

Abstract: In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lineshape. The HSM shows a pronounced resonance with the intralayer hybrid trions (HX$^-$) of the MoSe$_2$ and WSe$_2$ layers, only. No resonance with the… ▽ More In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lineshape. The HSM shows a pronounced resonance with the intralayer hybrid trions (HX$^-$) of the MoSe$_2$ and WSe$_2$ layers, only. No resonance with the neutral intralayer excitons is found. First-principles calculations reveal a strong coupling of Q-valley states, which are delocalized over both layers and participate in the HX$^-$, with the SM. This emerging trion-phonon coupling may be relevant for experiments on gate-controlled heterobilayers. △ Less

Submitted 22 August, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Comments: 6 pages, 4 figures

Valley-magnetophonon resonance for interlayer excitons

Authors: D. S. Smirnov, J. Holler, M. Kempf, J. Zipfel, P. Nagler, M. V. Ballottin, A. A. Mitioglu, A. Chernikov, P. C. M. Christianen, C. Schüller, T. Korn

Abstract: Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magn… ▽ More Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Tesla for H-type and R-type stacking configurations despite their vastly different excitonic energy splittings. As a microscopic mechanism of the hole intervalley scattering we identify the scattering with chiral TA phonons of MoSe$_2$ between excitonic states mixed by the long-range electron hole exchange interaction. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Comments: 7+5 pages, 2+0 figures

Interlayer exciton valley polarization dynamics in large magnetic fields

Authors: Johannes Holler, Malte Selig, Michael Kempf, Jonas Zipfel, Philipp Nagler, Manuel Katzer, Florian Katsch, Mariana V. Ballottin, Anatolie A. Mitioglu, Alexey Chernikov, Peter C. M. Christianen, Christian Schüller, Andreas Knorr, Tobias Korn

Abstract: In van der Waals heterostructures (HS) consisting of stacked MoSe$_2$ and WSe$_2$ monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changi… ▽ More In van der Waals heterostructures (HS) consisting of stacked MoSe$_2$ and WSe$_2$ monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changing the valley index (H-type anti-alignment). Here, we study the valley polarization dynamics of ILE in magnetic fields up to 30~Tesla by time-resolved photoluminescence (PL). For all ILE types, we find a finite initial PL circular degree of polarization ($DoP$) after unpolarized excitation in applied magnetic fields. For ILE in H-type HS, we observe a systematic increase of the PL $DoP$ with time in applied magnetic fields, which saturates at values close to unity for the largest fields. By contrast, for ILE in R-type HS, the PL $DoP$ shows a decrease and a zero crossing before saturating with opposite polarization. This unintuitive behavior can be explained by a model considering the different ILE states in H- and R-type HS and their selection rules coupling PL helicity and valley polarization. △ Less

Submitted 5 November, 2021; originally announced November 2021.

Journal ref: Phys. Rev. B 105, 085303, 2022

Two-color Kerr microscopy of two-dimensional materials with sub-picosecond time resolution

Authors: M. Kempf, A. Schubert, R. Schwartz, T. Korn

Abstract: We present a two-color Kerr microscopy system based on two electronically synchronized erbium-fiber laser oscillators with independently tunable emission energies spanning most of the visible spectrum. Combining a spatial resolution below 2 $μ$m and sub-ps time resolution with high sensitivity and cryogenic sample temperatures, it is ideally suited for studying spin and valley dynamics in a wide r… ▽ More We present a two-color Kerr microscopy system based on two electronically synchronized erbium-fiber laser oscillators with independently tunable emission energies spanning most of the visible spectrum. Combining a spatial resolution below 2 $μ$m and sub-ps time resolution with high sensitivity and cryogenic sample temperatures, it is ideally suited for studying spin and valley dynamics in a wide range of two-dimensional materials. We illustrate its capabilities by studying a monolayer of the common semiconducting transition metal disulfide MoS$_2$. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Rev. Sci. Instrum. 92, 113904 (2021)

Ultrafast charge-transfer dynamics in twisted MoS$_2$/WSe$_2$ heterostructures

Authors: J. E. Zimmermann, M. Axt, F. Mooshammer, P. Nagler, C. Schüller, T. Korn, U. Höfer, G. Mette

Abstract: Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. To understand the nature and the dynamics of thi… ▽ More Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. To understand the nature and the dynamics of this charge transfer is of utmost importance for the design and efficiency of potential devices. However, systematic studies concerning the influence of the stacking angle on the charge transfer remain sparse. Here, we apply time- and polarization resolved second-harmonic imaging microscopy to investigate the charge-transfer dynamics for three MoS$_2$/WSe$_2$ heterostructures with different stacking angles at a previously unattainable time-resolution of $\approx$ 6 fs. For 1.70 eV excitation energy, electron transfer from WSe$_2$ to MoS$_2$ is found to depend considerably on the stacking angle with the fastest transfer time observed to be as short as 12 fs. At 1.85 eV excitation energy, ultrafast hole transfer from MoS$_2$ to hybridized states at the $Γ$-point or to the K-points of WSe$_2$ has to be considered. Surprisingly, the corresponding decay dynamics show only a minor stacking-angle dependence indicating that radiative recombination of indirect $Γ$-K excitons becomes the dominant decay route for all samples. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Large-scale map** of moiré superlattices by Raman imaging of interlayer breathing mode and moiré phonons

Authors: Kai-Qiang Lin, Johannes Holler, Jonas M. Bauer, Marten Scheuck, Bo Peng, Tobias Korn, Sebastian Bange, John M. Lupton, Christian Schüller

Abstract: Moiré superlattices can induce correlated-electronic phases in twisted van-der-Waals materials. Strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical a… ▽ More Moiré superlattices can induce correlated-electronic phases in twisted van-der-Waals materials. Strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical and optical properties. Here we demonstrate in twisted-bilayer transition-metal dichalcogenides that low-frequency Raman scattering can be utilized not only to detect atomic reconstruction, but also to map out the inhomogeneity of the moiré lattice over large areas. The method is established based on the finding that both the interlayer-breathing mode and moiré phonons are highly susceptible to the moiré period and provide characteristic fingerprints. We visualize microscopic domains with an effective twist-angle resolution of ~0.1°. This ambient non-invasive methodology can be conveniently implemented to characterize and preselect high-quality areas of samples for subsequent device fabrication, and for transport and optical experiments. △ Less

Submitted 26 December, 2020; originally announced December 2020.

Low-frequency Raman scattering in WSe$_2$-MoSe$_2$ heterobilayers: Evidence for atomic reconstruction

Authors: Johannes Holler, Sebastian Meier, Michael Kempf, Philipp Nagler, Kenji Watanabe, Takashi Tanaguchi, Tobias Korn, Christian Schüller

Abstract: We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $θ\pm δ$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $θ=0^\circ$, or $θ=60^\circ$, and $δ\lesssim 3^\circ$, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form… ▽ More We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $θ\pm δ$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $θ=0^\circ$, or $θ=60^\circ$, and $δ\lesssim 3^\circ$, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form R-type or H-type stacking orders. We find slightly different ISM energies of about 18~cm$^{-1}$ and 17~cm$^{-1}$ for H-type and R-type reconstructions, respectively, independent of the exact value of $θ\pm δ$. Our findings are corroborated by the fact that the ISM is not observed in samples with twist angles, which deviate by $δ> 3^\circ$ from $0^\circ$ or $60^\circ$. This is expected, since in such incommensurate structures, with the possibility of Moir$\acute{\text{e}}$-lattice formation, there is no restoring force for an ISM. Furthermore, we observe the ISM even in sufficiently aligned heterobilayers, which are encapsulated in hexagonal Boron nitride. This is particularly relevant for the characterization of high-quality heterostructure devices. △ Less

Submitted 29 April, 2020; originally announced April 2020.

Comments: 5 pages, 4 figures

Ultrafast transition between exciton phases in van der Waals heterostructures

Authors: Philipp Merkl, Fabian Mooshammer, Philipp Steinleitner, Anna Girnghuber, Kai-Qiang Lin, Philipp Nagler, Johannes Holler, Christian Schüller, John M. Lupton, Tobias Korn, Simon Ovesen, Samuel Brem, Ermin Malic, Rupert Huber

Abstract: Heterostructures of atomically thin van der Waals bonded monolayers have opened a unique platform to engineer Coulomb correlations, sha** excitonic, Mott insulating, or superconducting phases. In transition metal dichalcogenide heterostructures, electrons and holes residing in different monolayers can bind into spatially indirect excitons with a strong potential for optoelectronics, valleytronic… ▽ More Heterostructures of atomically thin van der Waals bonded monolayers have opened a unique platform to engineer Coulomb correlations, sha** excitonic, Mott insulating, or superconducting phases. In transition metal dichalcogenide heterostructures, electrons and holes residing in different monolayers can bind into spatially indirect excitons with a strong potential for optoelectronics, valleytronics, Bose condensation, superfluidity, and moiré-induced nanodot lattices. Yet these ideas require a microscopic understanding of the formation, dissociation, and thermalization dynamics of correlations including ultrafast phase transitions. Here we introduce a direct ultrafast access to Coulomb correlations between monolayers; phase-locked mid-infrared pulses allow us to measure the binding energy of interlayer excitons in WSe2/WS2 hetero-bilayers by revealing a novel 1s-2p resonance, explained by a fully quantum mechanical model. Furthermore, we trace, with subcycle time resolution, the transformation of an exciton gas photogenerated in the WSe2 layer directly into interlayer excitons. Depending on the stacking angle, intra- and interlayer species coexist on picosecond scales and the 1s-2p resonance becomes renormalized. Our work provides a direct measurement of the binding energy of interlayer excitons and opens the possibility to trace and control correlations in novel artificial materials. △ Less

Submitted 9 October, 2019; originally announced October 2019.

Comments: This is a post-peer-review, pre-copyedit version of an article published in Nature Materials. The final authenticated version is available online at https://doi.org/10.1038/s41563-019-0337-0

Journal ref: Nature Materials volume 18, pages 691-696 (2019)

Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials

Authors: Johannes Holler, Lorenz Bauriedl, Tobias Korn, Andrea Seitz, Furkan Özyigit, Michaela Eichinger, Christian Schüller, Kenji Watanabe, Takashi Taniguchi, Christoph Strunk, Nicola Paradiso

Abstract: Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Wa… ▽ More Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Waals materials. In this work we investigated the impact of the environment on Raman characterization of thin NbSe$_2$ crystals. We show that in ambient conditions the flake is locally oxidized even for very low illumination intensity. On the other hand, we observe no degradation if the Raman measurements are performed either in vacuum or on fully hBN-encapsulated samples. Interestingly, we find that covering samples deposited on the usual SiO$_2$ surface only from the top is not sufficient to prevent diffusion of oxygen underneath the layers. △ Less

Submitted 29 July, 2019; originally announced July 2019.

Comments: 7 pages, 4 figures. Johannes Holler and Lorenz Bauriedl contributed equally to this work

Journal ref: 2D Mater. 7, 015012 (2019)

Absence of a giant spin Hall effect in plasma-hydrogenated graphene

Authors: Tobias Völkl, Denis Kochan, Thomas Ebnet, Sebastian Ringer, Daniel Schiermeier, Philipp Nagler, Tobias Korn, Christian Schüller, Jaroslav Fabian, Dieter Weiss, Jonathan Eroms

Abstract: The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hyd… ▽ More The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hydrogenated graphene in the H-bar method and by direct measurements of the inverse SHE. Although a large nonlocal resistance can be observed in the H-bar structure, comparison with the results of the other method indicate that this nonlocal resistance is caused by a non-spin-related origin. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. B 99, 085401 (2019)

Ultralong spin lifetimes in one-dimensional semiconductor nanowires

Authors: Florian Dirnberger, Michael Kammermeier, Jan König, Moritz Forsch, Paulo E. Faria Junior, Tiago Campos, Jaroslav Fabian, John Schliemann, Christian Schüller, Tobias Korn, Paul Wenk, Dominique Bougeard

Abstract: We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D subband is populated. We find the observed spin lifetimes of more th… ▽ More We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D subband is populated. We find the observed spin lifetimes of more than $200\,\textrm{ns}$ to result from the robustness of 1D electrons against major spin relaxation mechanisms, highlighting the promising potential of these wires for long-range transport of coherent spin information. △ Less

Submitted 21 May, 2019; v1 submitted 21 September, 2018; originally announced September 2018.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 114, 202101 (2019)

Spatial extent of the excited exciton states in WS$_2$ monolayers from diamagnetic shifts

Authors: Jonas Zipfel, Johannes Holler, Anatolie A. Mitioglu, Mariana V. Ballottin, Philipp Nagler, Andreas V. Stier, Takashi Taniguchi, Kenji Watanabe, Scott A. Crooker, Peter C. M. Christianen, Tobias Korn, Alexey Chernikov

Abstract: We experimentally study the radii of excitons in hBN-encapsulated WS2 monolayers by means of magneto-optical reflectance spectroscopy at cryogenic temperatures in magnetic fields up to 29 T. We observe field-induced energy shifts of the exciton ground and excited states due to valley Zeeman and diamagnetic effects. We find the g factor of the first excited state of $-4.2(+/-0.1) to be essentially… ▽ More We experimentally study the radii of excitons in hBN-encapsulated WS2 monolayers by means of magneto-optical reflectance spectroscopy at cryogenic temperatures in magnetic fields up to 29 T. We observe field-induced energy shifts of the exciton ground and excited states due to valley Zeeman and diamagnetic effects. We find the g factor of the first excited state of $-4.2(+/-0.1) to be essentially equal to that of the ground state of -4.35(+/-0.1). From diamagnetic shifts we determine the root mean square radii of the excitons. The radius of the first excited state is found to be 5-8 nm and that of the ground state around 2 nm. Our results further confirm the Wannier-Mott nature of the exciton quasiparticles in monolayer semiconductors and the assignment of the optical resonances in absorption-type measurements. They also provide additional support for the applicability of the effective mass hydrogenlike models in these systems. △ Less

Submitted 23 August, 2018; originally announced August 2018.

Comments: accepted for publication in Phys. Rev. B

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

Authors: Philipp Steinleitner, Philipp Merkl, Alexander Graf, Philipp Nagler, Jonas Zipfel, Christian Schüller, Tobias Korn, Alexey Chernikov, Rupert Huber, Samuel Brem, Malte Selig, Gunnar Berghäuser, Ermin Malic

Abstract: Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a cap** layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe$_2$ monolay… ▽ More Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a cap** layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe$_2$ monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of $1s$ A excitons. This approach allows us to trace the energies and linewidths of the atom-like $1s$-$2p$ transition of optically bright and dark excitons as well as the densities of these quasiparticles. The fundamental excitonic resonance red shifts and narrows in the WSe$_2$/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of non local screening on electron-hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures. △ Less

Submitted 29 June, 2018; originally announced June 2018.

Direct observation of ultrafast exciton formation in monolayer WSe$_2$

Authors: Philipp Steinleitner, Philipp Merkl, Philipp Nagler, Joshua Mornhinweg, Christian Schüller, Tobias Korn, Alexey Chernikov, Rupert Huber

Abstract: Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like excitons. Here, we directly trace the ultrafast formation of excitons by monitoring the absolute densities of bound and unbound electron-hole pairs in monolayers of WSe$_2$ following f… ▽ More Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like excitons. Here, we directly trace the ultrafast formation of excitons by monitoring the absolute densities of bound and unbound electron-hole pairs in monolayers of WSe$_2$ following femtosecond non-resonant optical excitation. To this end, phase-locked mid-infrared probe pulses and field-sensitive electro-optic sampling are used to map out the full complex-valued optical conductivity of the non-equilibrium system and to discern the hallmark low-energy responses of bound and unbound pairs. While free charge carriers strongly influence the infrared response immediately after above-bandgap injection, up to 60% of the electron-hole pairs are bound as excitons already on a sub-picosecond timescale, evidencing extremely fast and efficient exciton formation. During the subsequent recombination phase, we still find a large density of free carriers in addition to excitons, indicating a non-equilibrium state of the photoexcited electron-hole system. △ Less

Submitted 4 July, 2018; v1 submitted 29 June, 2018; originally announced June 2018.

Exciton diffusion and halo effects in monolayer semiconductors

Authors: Marvin Kulig, Jonas Zipfel, Philipp Nagler, Sofia Blanter, Christian Schüller, Tobias Korn, Nicola Paradiso, Mikhail M. Glazov, Alexey Chernikov

Abstract: We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially- and time-resolved micro-photoluminescence under ambient conditions. We find highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30 cm2/s, depending on the i… ▽ More We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially- and time-resolved micro-photoluminescence under ambient conditions. We find highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30 cm2/s, depending on the injected exciton density. Solving the diffusion equation while accounting for Auger recombination allows us to identify and quantitatively understand the main origin of the increase in the observed diffusion coefficient. At elevated excitation densities, the initial Gaussian distribution of the excitons evolves into long-lived halo shapes with micrometer-scale diameter, indicating additional memory effects in the exciton dynamics. △ Less

Submitted 20 May, 2018; v1 submitted 25 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. Lett. 120, 207401 (2018)

Two-dimensional semiconductors in the regime of strong light-matter coupling

Authors: Christian Schneider, Mikhail M. Glazov, Tobias Korn, Sven Höfling, Bernhard Urbaszek

Abstract: The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron-hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced optical transitions, which can be brought into resonance with electromagnetic fields in microcavities and plasmonic nanostructures. Due to the atomic thinness a… ▽ More The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron-hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced optical transitions, which can be brought into resonance with electromagnetic fields in microcavities and plasmonic nanostructures. Due to the atomic thinness and robustness of the monolayers, their integration in van der Waals heterostructures provides unique opportunities for engineering strong light-matter coupling. We review first results in this emerging field and outline future opportunities and challenges. △ Less

Submitted 18 April, 2018; originally announced April 2018.

Comments: 10 pages, 3 figures, short review, submitted version

Journal ref: Nature Communications 9, 2695 (2018)

Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures

Authors: Jens Kunstmann, Fabian Mooshammer, Philipp Nagler, Andrey Chaves, Frederick Stein, Nicola Paradiso, Gerd Plechinger, Christoph Strunk, Christian Schüller, Gotthard Seifert, David R. Reichman, Tobias Korn

Abstract: Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges… ▽ More Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges, where electron and hole are spatially separated. These interlayer excitons allow exploration of many-body quantum phenomena and are ideally suited for valleytronic applications. Mostly, a basic model of fully spatially-separated electron and hole stemming from the $K$ valleys of the monolayer Brillouin zones is applied to describe such excitons. Here, we combine photoluminescence spectroscopy and first principle calculations to expand the concept of interlayer excitons. We identify a partially charge-separated electron-hole pair in MoS$_2$/WSe$_2$ heterostructures residing at the $Γ$ and $K$ valleys. We control the emission energy of this new type of momentum-space indirect, yet strongly-bound exciton by variation of the relative orientation of the layers. These findings represent a crucial step towards the understanding and control of excitonic effects in TMDC heterostructures and devices. △ Less

Submitted 13 March, 2018; originally announced March 2018.

Comments: Nature Physics (2018), in press [main article (letter) and Supporting Information]

Journal ref: Nature Physics (2018)

Zeeman Splitting and Inverted Polarization of Biexciton Emission in Monolayer WS2

Authors: Philipp Nagler, Mariana V. Ballottin, Anatolie A. Mitioglu, Mikhail V. Durnev, Takashi Taniguchi, Kenji Watanabe, Alexey Chernikov, Christian Schüller, Mikhail M. Glazov, Peter C. M. Christianen, Tobias Korn

Abstract: We investigate the magnetic-field-induced splitting of biexcitons in monolayer WS$_2$ using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed $g$ factor of the biexciton amounts to $-3.89$, closely matching the $g$ factor of the neutral exciton. The biexciton emission shows an inverted circular field-induced polarization upon linearly pol… ▽ More We investigate the magnetic-field-induced splitting of biexcitons in monolayer WS$_2$ using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed $g$ factor of the biexciton amounts to $-3.89$, closely matching the $g$ factor of the neutral exciton. The biexciton emission shows an inverted circular field-induced polarization upon linearly polarized excitation, i.e. it exhibits preferential emission from the high-energy peak in a magnetic field. This phenomenon is explained by taking into account the configuration of the biexciton constituents in momentum space and their respective energetic behavior in magnetic fields. Our findings reveal the critical role of dark excitons in the composition of this many-body state. △ Less

Submitted 28 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Lett. 121, 057402 (2018)

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

Authors: Riccardo Frisenda, Joshua O. Island, Jose L. Lado, Emerson Giovanelli, Patricia Gant, Philipp Nagler, Sebastian Bange, John M. Lupton, Christian Schüller, Aday Molina-Mendoza, Lucia Aballe, Michael Foerster, Tobias Korn, Miguel Angel Niño, David Perez de Lara, Emilio M. Pérez, Joaquín Fernandéz-Rossier, Andres Castellanos-Gomez

Abstract: Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum,… ▽ More Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectros-copy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: main text 20 pages + 10 figures, supporting information 16 pages + 17 figures

Asymmetric $g$ tensor in low-symmetry two-dimensional hole systems

Authors: C. Gradl, R. Winkler, M. Kempf, J. Holler, D. Schuh, D. Bougeard, A. Hernández-Mínguez, K. Biermann, P. V. Santos, C. Schüller, T. Korn

Abstract: The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performi… ▽ More The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performing time-resolved Kerr rotation measurements, we found a non-diagonal tensor $g$ that manifests itself in unusual precessional motion as well as distinct dependencies of hole spin dynamics on the direction of the magnetic field $\vec{B}$. We quantify the individual components of the tensor $g$ for [113]-, [111]- and [110]-grown samples. We complement the experiments by a comprehensive theoretical study of Zeeman splitting in in-plane and out-of-plane fields $\vec{B}$. To this end, we develop a detailed multiband theory for the tensor $g$. Using perturbation theory, we derive transparent analytical expressions for the components of the tensor $g$ that we complement with accurate numerical calculations based on our theoretical framework. We obtain very good agreement between experiment and theory. Our study demonstrates that the tensor $g$ is neither symmetric nor antisymmetric. Opposite off-diagonal components can differ in size by up to an order of magnitude. △ Less

Submitted 21 June, 2018; v1 submitted 25 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. X 8, 021068 (2018)

Observation of macroscopic valley-polarized monolayer exciton-polaritons at room temperature

Authors: N. Lundt, S. Stoll, P. Nagler, A. Nalitov, S. Klembt, S. Betzold, J. W. Goddard, E. Frieling, A. V. Kavokin, C. Schüller, T. Korn, S. Höfling, C. Schneider

Abstract: In this letter, we address the chiral properties of valley exciton-polaritons in a monolayer of WS2 in the regime of strong light-matter coupling with a Tamm-Plasmon resonance. We observe that the valley polarization, which manifests in the circular polarization of the emitted photoluminescence, is strongly enhanced in comparison to bare WS2 monolayers, and can even be observed under non-resonant… ▽ More In this letter, we address the chiral properties of valley exciton-polaritons in a monolayer of WS2 in the regime of strong light-matter coupling with a Tamm-Plasmon resonance. We observe that the valley polarization, which manifests in the circular polarization of the emitted photoluminescence, is strongly enhanced in comparison to bare WS2 monolayers, and can even be observed under non-resonant excitation at ambient conditions. We study the relaxation and decay dynamics of exciton-polaritons in our device, and present a microscopic model to explain the wave vector-dependent valley depolarization as an interplay of bright and dark states, electron-hole exchange interaction and the linear polarization splitting inherent to the microcavity. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 96, 241403 (2017)

Long-lived spin polarization in n-doped MoSe$_2$ monolayers

Authors: Markus Schwemmer, Philipp Nagler, Andreas Hanninger, Christian Schüller, Tobias Korn

Abstract: Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination of excitons in these materials poses a natural limit for applications, so that a transfer of polarization to resident carriers is highly advantageous. Here, we… ▽ More Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination of excitons in these materials poses a natural limit for applications, so that a transfer of polarization to resident carriers is highly advantageous. Here, we study the low-temperature spin-valley dynamics in nominally undoped and n-doped MoSe$_2$ monolayers using time-resolved Kerr rotation. In the n-doped MoSe$_2$, we find a long-lived component of the Kerr signal which we attribute to the spin polarization of resident carriers. This component is absent in the nominally undoped MoSe$_2$. The long-lived spin polarization is stable under applied in-plane magnetic fields. Spatially resolved measurements allow us to determine an upper boundary for the electron spin diffusion constant in MoSe$_2$. △ Less

Submitted 7 June, 2017; v1 submitted 6 June, 2017; originally announced June 2017.

Journal ref: Appl. Phys. Lett. 111, 082404 (2017)

Valley Dynamics of Excitons in Monolayer Dichalcogenides

Authors: Gerd Plechinger, Philipp Nagler, Ashish Arora, Robert Schmidt, Alexey Chernikov, John Lupton, Rudolf Bratschitsch, Christian Schüller, Tobias Korn

Abstract: Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these semiconducting materials, optically excited electron-hole pairs form tightly Coulomb-bound excitons with large binding energies. The selection rules for excitonic tran… ▽ More Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these semiconducting materials, optically excited electron-hole pairs form tightly Coulomb-bound excitons with large binding energies. The selection rules for excitonic transitions allow for direct optical generation of a valley-polarized exciton population using resonant excitation. Here, we investigate the exciton valley dynamics in monolayers of three different TMDCs by means of time-resolved Kerr rotation at low temperatures. We observe pronounced differences in the valley dynamics of tungsten- and molybdenum-based TMDCs, which are directly related to the opposite order of the conduction-band spin splitting in these materials. △ Less

Submitted 7 June, 2017; v1 submitted 31 May, 2017; originally announced May 2017.

Journal ref: Phys. Status Solidi RRL, 1700131 (2017)

Valley polarized relaxation and upconversion luminescence from Tamm-Plasmon Trion-Polaritons with a MoSe2 monolayer

Authors: N. Lundt, P. Nagler, A. Nalitov, S. Klembt, M. Wurdack, S. Stoll, T. H. Harder, S. Betzold, V. Baumann, A. V. Kavokin, C. Schüller, T. Korn, S. Höfling, C. Schneider

Abstract: Transition metal dichalcogenides represent an ideal testbed to study excitonic effects, spin-related phenomena and fundamental light-matter coupling in nanoscopic condensed matter systems. In particular, the valley degree of freedom, which is unique to such direct band gap monolayers with broken inversion symmetry, adds fundamental interest in these materials. Here, we implement a Tamm-plasmon str… ▽ More Transition metal dichalcogenides represent an ideal testbed to study excitonic effects, spin-related phenomena and fundamental light-matter coupling in nanoscopic condensed matter systems. In particular, the valley degree of freedom, which is unique to such direct band gap monolayers with broken inversion symmetry, adds fundamental interest in these materials. Here, we implement a Tamm-plasmon structure with an embedded MoSe2 monolayer and study the formation of polaritonic quasi-particles. Strong coupling conditions between the Tamm-mode and the trion resonance of MoSe2 are established, yielding bright luminescence from the polaritonic ground state under non-resonant optical excitation. We demonstrate, that tailoring the electrodynamic environment of the monolayer results in a significantly increased valley polarization. This enhancement can be related to change in recombination dynamics shown in time-resolved photoluminescence measurements. We furthermore observe strong upconversion luminescence from resonantly excited polariton states in the lower polariton branch. This upconverted polariton luminescence is shown to preserve the valley polarization of the trion-polariton, which paves the way towards combining spin-valley physics and exciton scattering experiments. △ Less

Submitted 12 May, 2017; originally announced May 2017.

Comments: 15 pages, 4 figures

Journal ref: 2D Mater. 4 025096 (2017)

Giant Zeeman splitting inducing near-unity valley polarization in van der Waals heterostructures

Authors: Philipp Nagler, Mariana V. Ballottin, Anatolie A. Mitioglu, Fabian Mooshammer, Nicola Paradiso, Christoph Strunk, Rupert Huber, Alexey Chernikov, Peter C. M. Christianen, Christian Schüller, Tobias Korn

Abstract: Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics , maintaining control over spin-valley polarization proved challe… ▽ More Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics , maintaining control over spin-valley polarization proved challenging in individual monolayers. A promising alternative route explores type II band alignment in artificial van der Waals heterostructures. The resulting formation of interlayer excitons combines the advantages of long carrier lifetimes and spin-valley locking . Here, we demonstrate direct magnetic manipulation of valley polarization in a WSe2/MoSe2 heterostructure through giant valley Zeeman splitting of interlayer transitions. Remarkably, even after non-selective injection, the observed $g$ factor as large as $-15$ induces near-unity polarization of long-lived excitons with 100 ns lifetimes under magnetic fields. The demonstrated control of the spin-valley physics highlights the exceptional aspects of novel, artificially designed material systems and their promise for atomically-thin valleytronic devices. △ Less

Submitted 7 April, 2017; originally announced April 2017.

Journal ref: Nature Communications 8, 1551 (2017)

Polarized SERS of individual suspended carbon nanotubes by Pt-Re nanoantennas

Authors: Christian Bäuml, Tobias Korn, Christoph Lange, Christian Schüller, Christoph Strunk, Nicola Paradiso

Abstract: We present optical nanoantennas designed for applications that require processing temperatures larger than 800°C. The antennas consist of arrays of Re/Pt bilayer strips fabricated with a lift-off-free technique on top of etched trenches. Reflectance measurements show a clear plasmonic resonance at approximately 670 nm for light polarized orthogonal to the strip axis. The functionality of the anten… ▽ More We present optical nanoantennas designed for applications that require processing temperatures larger than 800°C. The antennas consist of arrays of Re/Pt bilayer strips fabricated with a lift-off-free technique on top of etched trenches. Reflectance measurements show a clear plasmonic resonance at approximately 670 nm for light polarized orthogonal to the strip axis. The functionality of the antennas is demonstrated by growing single-walled carbon nanotubes (CNTs) on top of the antenna arrays and measuring the corresponding Raman signal enhancement of individual CNTs. The results of the measurements are quantitatively discussed in light of numerical simulations which highlight the impact of the substrate. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 96, 035408 (2017)

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Authors: Gerd Plechinger, Tobias Korn, John M. Lupton

Abstract: Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these materials can be deterministically initialized via irradiation with circularly polarized light. Here, we investigate the ultrafast dynamics of such a valley polariza… ▽ More Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these materials can be deterministically initialized via irradiation with circularly polarized light. Here, we investigate the ultrafast dynamics of such a valley polarization in monolayer tungsten diselenide by means of time-resolved Kerr reflectometry. The observed Kerr signal in our sample stems exclusively from charge-neutral excitons. Our findings support the picture of a fast decay of the valley polarization of bright excitons due to radiative recombination, intra-conduction-band spin-flip transitions, intervalley-scattering processes, and the formation of long-lived valley-polarized dark states. △ Less

Submitted 15 March, 2017; originally announced March 2017.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in The Journal of Physical Chemistry C, copyright $©$ American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/articlesonrequest/AOR-hCJpKkDiPY2E8AZzPe3t

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure

Authors: Philipp Nagler, Gerd Plechinger, Mariana V. Ballottin, Anatolie Mitioglu, Sebastian Meier, Nicola Paradiso, Christoph Strunk, Alexey Chernikov, Peter C. M. Christianen, Christian Schüller, Tobias Korn

Abstract: In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These spatially separated electron-hole pairs are Coulomb-coupled and form interlayer excitons. Here, we study these interlayer excitons in a heterostructure consisting o… ▽ More In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These spatially separated electron-hole pairs are Coulomb-coupled and form interlayer excitons. Here, we study these interlayer excitons in a heterostructure consisting of MoSe$_2$ and WSe$_2$ monolayers using photoluminescence spectroscopy. We observe a non-trivial temperature dependence of the linewidth and the peak energy of the interlayer exciton, including an unusually strong initial redshift of the transition with temperature, as well as a pronounced blueshift of the emission energy with increasing excitation power. By combining these observations with time-resolved photoluminescence measurements, we are able to explain the observed behavior as a combination of interlayer exciton diffusion and dipolar, repulsive exciton-exciton interaction. △ Less

Submitted 1 March, 2017; originally announced March 2017.

Journal ref: 2D Mater. 4, 025112 (2017)

Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs

Authors: Robin P. Puchert, Florian Steiner, Gerd Plechinger, Felix Hofmann, Ines Caspers, Johanna Kirschner, Philipp Nagler, Alexey Chernikov, Christian Schüller, Tobias Korn, Jan Vogelsang, Sebastian Bange, John M. Lupton

Abstract: Few inventions have shaped the world like the incandescent bulb. While Edison used thermal radiation from ohmically heated conductors, some noble metals exhibit "cold" electroluminescence (EL) in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennae, or scanning-tunnelling microscopy (STM). The origin of this radiation, which is spectrally broad and depends on… ▽ More Few inventions have shaped the world like the incandescent bulb. While Edison used thermal radiation from ohmically heated conductors, some noble metals exhibit "cold" electroluminescence (EL) in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennae, or scanning-tunnelling microscopy (STM). The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle EL is particularly intriguing since it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. We demonstrate nanoscopic FRET-LEDs which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides (TMDCs). In diffraction-limited hotspots showing pronounced photon bunching, broadband silver EL is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-LEDs in on-chip optical interconnects. △ Less

Submitted 13 February, 2017; originally announced February 2017.

Direct observation of the band gap transition in atomically thin ReS$_2$

Authors: Mathias Gehlmann, Irene Aguilera, Gustav Bihlmayer, Slavomír Nemšák, Philipp Nagler, Pika Gospodarič, Giovanni Zamborlini, Markus Eschbach, Vitaliy Feyer, Florian Kronast, Ewa Młyńczak, Tobias Korn, Lukasz Plucinski, Christian Schüller, Stefan Blügel, Claus M. Schneider

Abstract: ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic… ▽ More ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Coulomb engineering of the bandgap in 2D semiconductors

Authors: Archana Raja, Andrey Chaves, Jaeeun Yu, Ghidewon Arefe, Heather M. Hill, Albert F. Rigosi, Timothy C. Berkelbach, Philipp Nagler, Christian Schüller, Tobias Korn, Colin Nuckolls, James Hone, Louis E. Brus, Tony F. Heinz, David R. Reichman, Alexey Chernikov

Abstract: The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environmental sensitivity and unusual strength of the Coulomb interaction in these materials. By engineering the surrounding dielectric environment,… ▽ More The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environmental sensitivity and unusual strength of the Coulomb interaction in these materials. By engineering the surrounding dielectric environment, we are able to tune the electronic bandgap in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behavior to present an in-plane dielectric heterostructure with a spatially dependent bandgap, illustrating the feasibility of our approach for the creation of lateral junctions with nanoscale resolution. This successful demonstration of bandgap engineering based on the non-invasive modification of the Coulomb interaction should enable the design of a new class of atomically thin devices to advance the limits of size and functionality for solid-state technologies. △ Less

Submitted 7 February, 2017; v1 submitted 3 February, 2017; originally announced February 2017.

Excitonic valley effects in monolayer WS$_2$ under high magnetic fields

Authors: Gerd Plechinger, Philipp Nagler, Ashish Arora, Andrés Granados del Águila, Mariana V. Ballottin, Tobias Frank, Philipp Steinleitner, Martin Gmitra, Jaroslav Fabian, Peter C. M. Christianen, Rudolf Bratschitsch, Christian Schüller, Tobias Korn

Abstract: Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The… ▽ More Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The valley degeneracy is lifted for all optical features, particularly for excitons, singlet and triplet trions, for which we determine the g factor separately. While the observation of a diamagnetic shift of the exciton and trion resonances gives us insight into the real-space extension of these quasiparticles, magnetic field induced valley polarization effects shed light onto the exciton and trion dispersion relations in reciprocal space. The field dependence of the trion valley polarizations is in line with the predicted trion splitting into singlet and triplet configurations. △ Less

Submitted 9 December, 2016; originally announced December 2016.

Trion Valley Coherence in Monolayer Semiconductors

Authors: Kai Hao, Lixiang Xu, Fengcheng Wu, Philipp Nagler, Kha Tran, Xin Ma, Christian Schüller, Tobias Korn, Allan H. MacDonald, Galan Moody, Xiaoqin Li

Abstract: The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control… ▽ More The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of this quantum degree of freedom. The charged exciton (trion) in TMDs is an intriguing alternative to the neutral exciton for control of valley pseudospin because of its long spontaneous recombination lifetime, its robust valley polarization, and its coupling to residual electronic spin. Trion valley coherence has however been unexplored due to experimental challenges in accessing it spectroscopically. In this work, we employ ultrafast two-dimensional coherent spectroscopy to resonantly generate and detect trion valley coherence in monolayer MoSe$_2$ demonstrating that it persists for a few-hundred femtoseconds. We conclude that the underlying mechanisms limiting trion valley coherence are fundamentally different from those applicable to exciton valley coherence. Based on these observations, we suggest possible strategies for extending valley coherence times in two-dimensional materials. △ Less

Submitted 10 November, 2016; originally announced November 2016.

Journal ref: 2D Materials 4, 025105 (2017)

Neutral and Charged Inter-Valley Biexcitons in Monolayer MoSe$_2$

Authors: Kai Hao, Lixiang Xu, Judith F. Specht, Philipp Nagler, Kha Tran, Akshay Singh, Chandriker Kavir Dass, Christian Schüller, Tobias Korn, Marten Richter, Andreas Knorr, Xiaoqin Li, Galan Moody

Abstract: In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods alone. Here, we implem… ▽ More In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods alone. Here, we implement polarization-resolved two-dimensional coherent spectroscopy to unravel the complex optical response of monolayer MoSe$_2$ and identify multiple higher-order correlated states. Decisive signatures of neutral and charged inter-valley biexcitons appear in cross-polarized two-dimensional spectra as distinct resonances with respective ~20 meV and ~5 meV binding energies--similar to recent calculations using variational and Monte Carlo methods. A theoretical model taking into account the valley-dependent optical selection rules reveals the specific quantum pathways that give rise to these states. Inter-valley biexcitons identified here, comprised of neutral and charged excitons from different valleys, offer new opportunities for creating exotic exciton-polariton condensates and for develo** ultrathin biexciton lasers and polarization-entangled photon sources. △ Less

Submitted 7 September, 2016; originally announced September 2016.

Journal ref: Nature Communications 8, 15552 (2017)

Enhanced spin-orbit coupling in core/shell nanowires

Authors: Stephan Furthmeier, Florian Dirnberger, Martin Gmitra, Andreas Bayer, Moritz Forsch, Joachim Hubmann, Christian Schüller, Elisabeth Reiger, Jaroslav Fabian, Tobias Korn, Dominique Bougeard

Abstract: The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demo… ▽ More The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behavior is counterintuitive compared to bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures. △ Less

Submitted 3 June, 2016; originally announced June 2016.

Journal ref: Nat. Commun. 7, 12413 (2016)

Coherent cyclotron motion beyond Kohn's theorem

Authors: T. Maag, A. Bayer, S. Baierl, M. Hohenleutner, T. Korn, C. Schüller, D. Schuh, D. Bougeard, C. Lange, R. Huber M. Mootz, J. E. Sipe, S. W. Koch, M. Kira

Abstract: In solids, the high density of charged particles makes many-body interactions a pervasive principle governing optics and electronics[1-12]. However, Walter Kohn found in 1961 that the cyclotron resonance of Landau-quantized electrons is independent of the seemingly inescapable Coulomb interaction between electrons[2]. While this surprising theorem has been exploited in sophisticated quantum phenom… ▽ More In solids, the high density of charged particles makes many-body interactions a pervasive principle governing optics and electronics[1-12]. However, Walter Kohn found in 1961 that the cyclotron resonance of Landau-quantized electrons is independent of the seemingly inescapable Coulomb interaction between electrons[2]. While this surprising theorem has been exploited in sophisticated quantum phenomena[13-15] such as ultrastrong light-matter coupling[16], superradiance[17], and coherent control[18], the complete absence of nonlinearities excludes many intriguing possibilities, such as quantum-logic protocols[19]. Here, we use intense terahertz pulses to drive the cyclotron response of a two-dimensional electron gas beyond the protective limits of Kohn's theorem. Anharmonic Landau ladder climbing and distinct terahertz four- and six-wave mixing signatures occur, which our theory links to dynamic Coulomb effects between electrons and the positively charged ion background. This new context for Kohn's theorem unveils previously inaccessible internal degrees of freedom of Landau electrons, opening up new realms of ultrafast quantum control for electrons. △ Less

Submitted 3 June, 2016; v1 submitted 2 June, 2016; originally announced June 2016.

Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2

Authors: Kai Hao, Lixiang Xu, Philipp Nagler, Akshay Singh, Kha Tran, Chandriker Kavir Dass, Christian Schüller, Tobias Korn, Xiaoqin Li, Galan Moody

Abstract: The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal… ▽ More The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal the coherent and incoherent nature of exciton-trion coupling and the relevant timescales in monolayer MoSe2 using optical two-dimensional coherent spectroscopy. Coherent interaction between excitons and trions is definitively identified as quantum beating of cross-coupling peaks that persists for a few hundred femtoseconds. For longer times up to 10 ps, surprisingly, the relative intensity of the cross-coupling peaks increases, which is attributed to incoherent energy transfer likely due to phonon-assisted up-conversion and down-conversion processes that are efficient even at cryogenic temperature. △ Less

Submitted 26 May, 2016; originally announced May 2016.

Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides

Authors: Malte Selig, Gunnar Berghäuser, Archana Raja, Philipp Nagler, Christian Schüller, Tony F. Heinz, Tobias Korn, Alexey Chernikov, Ermin Malic, Andreas Knorr

Abstract: Atomically thin transition metal dichalcogenides (TMDs) are direct-gap semiconductors with strong light-matter and Coulomb interaction. The latter accounts for tightly bound excitons, which dominate the optical properties of these technologically promising materials. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in… ▽ More Atomically thin transition metal dichalcogenides (TMDs) are direct-gap semiconductors with strong light-matter and Coulomb interaction. The latter accounts for tightly bound excitons, which dominate the optical properties of these technologically promising materials. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. In a recent study, an experimental evidence for the existence of such dark states has been demonstrated, as well as their strong impact on the quantum efficiency of light emission in TMDs. Here, we reveal the microscopic origin of the excitonic coherence lifetime in two representative TMD materials (WS$_2$ and MoSe$_2$) within a joint study combining microscopic theory with optical experiments. We show that the excitonic coherence lifetime is determined by phonon-induced intra- and intervalley scattering into dark excitonic states. Remarkably, and in accordance with the theoretical prediction, we find an efficient exciton relaxation in WS$_2$ through phonon emission at all temperatures. △ Less

Submitted 11 May, 2016; originally announced May 2016.

Journal ref: Nature Communications 7, Article number: 13279 (2016)

Direct observation of internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe_2

Authors: C. Poellmann, P. Steinleitner, U. Leierseder, P. Nagler, G. Plechinger, M. Porer, R. Bratschitsch, C. Schüller, T. Korn, R. Huber

Abstract: Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their electronic and optical properties, however, are complicated by exotic room-temperature excitons, whose fundamental structure and dynamics has been under intens… ▽ More Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their electronic and optical properties, however, are complicated by exotic room-temperature excitons, whose fundamental structure and dynamics has been under intense investigation. While interband spectroscopy probes energies of excitons with vanishing centre-of-mass momenta, the majority of excitons has remained elusive, raising questions about their unusual internal structure, symmetry, many-body effects, and dynamics. Here we report the first direct experimental access to all relevant excitons in single-layer WSe2. Phase-locked mid-infrared pulses reveal the internal orbital 1s-2p resonance, which is highly sensitive to the shape of the excitonic envelope functions and provides accurate transition energies, oscillator strengths, densities and linewidths. Remarkably, the observed decay dynamics indicates a record fast radiative annihilation of small-momentum excitons within 150 fs, whereas Auger recombination prevails for optically dark states. The results provide a comprehensive view of excitons and introduce a new degree of freedom for quantum control, optoelectronics and valleytronics of dichalcogenide monolayers. △ Less

Submitted 4 May, 2016; originally announced May 2016.

Ultrafast mid-infrared nanoscopy of strained vanadium dioxide nanobeams

Authors: M. A. Huber, M. Plankl, M. Eisele, R. E. Marvel, F. Sandner, T. Korn, C. Schüller, R. F. Haglund, Jr., R. Huber, T. L. Cocker

Abstract: Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO$_2$) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature ($\sim$341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO$_2$ insulating phases by tuning t… ▽ More Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO$_2$) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature ($\sim$341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO$_2$ insulating phases by tuning the competition between electron and lattice degrees of freedom. It can even break the mesoscopic spatial symmetry of the transition, leading to a quasi-periodic ordering of insulating and metallic nanodomains. Nanostructuring of strained VO$_2$ could potentially yield unique components for future devices. However, the most spectacular property of VO$_2$ - its ultrafast transition - has not yet been studied on the length scale of its phase heterogeneity. Here, we use ultrafast near-field microscopy in the mid-infrared to study individual, strained VO$_2$ nanobeams on the 10 nm scale. We reveal a previously unseen correlation between the local steady-state switching susceptibility and the local ultrafast response to below-threshold photoexcitation. These results suggest that it may be possible to tailor the local photo-response of VO$_2$ using strain and thereby realize new types of ultrafast nano-optical devices. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Journal ref: Nano Letters 16, 1421-1427 (2016)

Observation of anisotropic interlayer Raman modes in few-layer ReS2

Authors: Philipp Nagler, Gerd Plechinger, Christian Schüller, Tobias Korn

Abstract: ReS$_2$ has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS$_2$ or WSe$_2$, the optical and electrical properties of ReS$_2$ are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS$_2$ samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe lay… ▽ More ReS$_2$ has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS$_2$ or WSe$_2$, the optical and electrical properties of ReS$_2$ are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS$_2$ samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift of the shear mode which stems from the in-plane anisotropy of the shear modulus in this material. △ Less

Submitted 18 November, 2015; v1 submitted 9 November, 2015; originally announced November 2015.

Journal ref: Phys. Status Solidi RRL 10, No. 2, 185 (2016)

Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate

Authors: G. Plechinger, A. Castellanos-Gomez, M. Buscema, H. S. J. van der Zant, G. A. Steele, A. Kuc, T. Heine, C. Schüller, T. Korn

Abstract: Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible substrate with the atomically thin MoS2 layer on top, experimental realization of biaxial strain is more challenging. Here, we exploit the large mismatch between… ▽ More Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible substrate with the atomically thin MoS2 layer on top, experimental realization of biaxial strain is more challenging. Here, we exploit the large mismatch between the thermal expansion coefficients of MoS2 and a silicone-based substrate to apply a controllable biaxial tensile strain by heating the substrate with a focused laser. The effect of this biaxial strain is directly observable in optical spectroscopy as a redshift of the MoS2 photoluminescence. We also demonstrate the potential of this method to engineer more complex strain patterns by employing highly absorptive features on the substrate to achieve non-uniform heat profiles. By comparison of the observed redshift to strain-dependent band structure calculations, we estimate the biaxial strain applied by the silicone-based substrate to be up to 0.2 percent, corresponding to a band gap modulation of 105 meV per percentage of biaxial tensile strain. △ Less

Submitted 30 September, 2015; originally announced September 2015.

Journal ref: 2D Mater. 2 015006 (2015)

Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers

Authors: G. Plechinger, F. Mooshammer, A. Castellanos-Gomez, G. A. Steele, C. Schüller, T. Korn

Abstract: We perform an optical spectroscopy study to investigate the properties of different artificial MoS$_2$ bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS$_2$ in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscop… ▽ More We perform an optical spectroscopy study to investigate the properties of different artificial MoS$_2$ bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS$_2$ in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscopy, second-harmonic-generation microscopy and photoluminescence measurements allows us to determine the degree of interlayer coupling in our samples. We find that even for electronically decoupled artificial structures, which show the same valley polarization degree as the constituent MoS$_2$ monolayers at low temperatures, there is a resonant energy transfer between individual layers which acts as an effective luminescence quenching mechanism. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Journal ref: 2D Mater. 2 034016 (2015)

Identification of excitons, trions and biexcitons in single-layer WS2

Authors: Gerd Plechinger, Philipp Nagler, Julia Kraus, Nicola Paradiso, Christoph Strunk, Christian Schüller, Tobias Korn

Abstract: Single-layer WS$_2$ is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photoluminescence measurements on mechanically exfoliated single-layer WS$_2$, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electr… ▽ More Single-layer WS$_2$ is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photoluminescence measurements on mechanically exfoliated single-layer WS$_2$, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electrically control the ratio of excitons and trions and assert a residual n-type do** of our samples. At high excitation densities and low temperatures, an additional peak at energies below the trion dominates the photoluminescence, which we identify as biexciton emission. △ Less

Submitted 22 July, 2015; v1 submitted 6 July, 2015; originally announced July 2015.

Comments: 6 pages, 5 figures

Journal ref: Phys. Status Solidi RRL 9, 457, 2015

Tailored nano-antennas for directional Raman studies of individual carbon nanotubes

Authors: Nicola Paradiso, Fatemeh Yaghobian, Christoph Lange, Tobias Korn, Christian Schüller, Rupert Huber, Christoph Strunk

Abstract: We exploit the near field enhancement of nano-antennas to investigate the Raman spectra of otherwise not optically detectable carbon nanotubes (CNTs). We demonstrate that a top-down fabrication approach is particularly promising when applied to CNTs, owing to the sharp dependence of the scattered intensity on the angle between incident light polarization and CNT axis. In contrast to tip enhancemen… ▽ More We exploit the near field enhancement of nano-antennas to investigate the Raman spectra of otherwise not optically detectable carbon nanotubes (CNTs). We demonstrate that a top-down fabrication approach is particularly promising when applied to CNTs, owing to the sharp dependence of the scattered intensity on the angle between incident light polarization and CNT axis. In contrast to tip enhancement techniques, our method enables us to control the light polarization in the sample plane, locally amplifying and rotating the incident field and hence optimizing the Raman signal. Such promising features are confirmed by numerical simulations presented here. The relative ease of fabrication and alignment makes this technique suitable for the realization of integrated devices that combine scanning probe, optical, and transport characterization. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Journal ref: Physical Review B, 91, 235449 (2015)

Hole spin dynamics and hole $g$ factor anisotropy in coupled quantum well systems

Authors: C. Gradl, M. Kempf, D. Schuh, D. Bougeard, R. Winkler, C. Schüller, T. Korn

Abstract: Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole… ▽ More Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole $g$ factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole $g$ factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics. △ Less

Submitted 11 August, 2014; originally announced August 2014.

Time-resolved Kerr rotation spectroscopy of valley dynamics in single-layer MoS2

Authors: G. Plechinger, P. Nagler, Schüller, T. Korn

Abstract: Single-layer MoS$_2$ and similar dichalcogenides are direct-gap semiconductors with a peculiar band structure: the direct gap is situated at the K$^+$ and K$^-$ points in the Brillouin zone, with a large valence-band spin splitting. Optical selection rules allow for valley-selective interband excitation using near-resonant, circularly polarized excitation. Here, we present time-resolved pump-probe… ▽ More Single-layer MoS$_2$ and similar dichalcogenides are direct-gap semiconductors with a peculiar band structure: the direct gap is situated at the K$^+$ and K$^-$ points in the Brillouin zone, with a large valence-band spin splitting. Optical selection rules allow for valley-selective interband excitation using near-resonant, circularly polarized excitation. Here, we present time-resolved pump-probe experiments in which we study the carrier and valley dynamics in a mechanically exfoliated single-layer MoS$_2$ flake at low temperatures. Under resonant excitation conditions, we find that the valley lifetime exceeds the photocarrier lifetime, indicating the creation of a resident valley polarization. For highly nonresonant excitation, the valley polarization decays within the photocarrier lifetime. △ Less

Submitted 11 June, 2014; v1 submitted 30 April, 2014; originally announced April 2014.

A direct comparison of CVD-grown and exfoliated MoS2 using optical spectroscopy

Authors: G. Plechinger, J. Mann, E. Preciado, D. Barroso, A. Nguyen, J. Eroms, C. Schüller, L. Bartels, T. Korn

Abstract: MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by chemical vapor deposition (CVD) and MoS$_2$ flakes prepared by mechanical exfoliation from natural bulk crystal. Raman spectroscopy measurements show differences betwe… ▽ More MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by chemical vapor deposition (CVD) and MoS$_2$ flakes prepared by mechanical exfoliation from natural bulk crystal. Raman spectroscopy measurements show differences between the in-plane and out-of-plane phonon mode positions in CVD-grown and exfoliated MoS$_2$. Photoluminescence (PL) map** reveals large regions in the CVD-grown films that emit strong PL at room temperature, and low-temperature PL scans demonstrate a large spectral shift of the A exciton emission as a function of position. Polarization-resolved PL measurements under near-resonant excitation conditions show a strong circular polarization of the PL, corresponding to a valley polarization. △ Less

Submitted 4 November, 2013; v1 submitted 31 October, 2013; originally announced October 2013.

Journal ref: Semicond. Sci. Technol. 29 064008 (2014)

Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

Authors: R. Voelkl, M. Schwemmer, M. Griesbeck, S. A. Tarasenko, D. Schuh, W. Wegscheider, C. Schueller, T. Korn

Abstract: We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temper… ▽ More We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5 percent. Spin diffusion is studied by varying the distance between pump and probe beams in micro-spectroscopy experiments. We observe diffusion lengths above 100 $μ$m and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance. △ Less

Submitted 28 October, 2013; originally announced October 2013.

Comments: 10 pages, 6 figures