Showing 1–49 of 49 results for author: Korkusinski, M

Theory of excitonic complexes in gated WSe$_2$ quantum dots

Authors: Daniel Miravet, Ludmiła Szulakowska, Maciej Bieniek, Marek Korkusiński, Paweł Hawrylak

Abstract: Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work… ▽ More Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work presents a theory for neutral excitonic complexes within gated $\text{WSe}_\text{2}$ quantum dots, considering spin, valley, electronic orbitals, and many-body interactions. We analyze how the electron-hole attraction depends on a range of system parameters, such as screened Coulomb interaction, strength of confinement of holes, and repulsion of electrons. Using an atomistic tight binding model we compute valence and conduction band states within a computational box comprising over one million atoms with applied gate potential. The atomistic wavefunctions are then used to calculate direct and exchange Coulomb matrix elements for a fictitious type I quantum dot, and to obtain a spectrum of interacting electron-hole pairs. Next, we study the effect of repulsive potential, pulling away electrons from the valence hole. We determine whether electron-hole pairs are sufficiently attracted to overcome electron repulsion by the confinement potential. Finally, we compute the dipole transition between hole and electron states to obtain the absorption spectrum. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Interacting holes in a gated WSe$_2$ quantum channel: valley correlations and zigzag Wigner crystal

Authors: Jarosław Pawłowski, Daniel Miravet, Maciej Bieniek, Marek Korkusinski, Justin Boddison-Chouinard, Louis Gaudreau, Adina Luican-Mayer, Pawel Hawrylak

Abstract: We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exact configuration-interaction tools we demonstrate the possibility of symmetry-broken valley polarized states for strongly interacting holes. The interp… ▽ More We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exact configuration-interaction tools we demonstrate the possibility of symmetry-broken valley polarized states for strongly interacting holes. The interplay between interactions, perpendicular magnetic field, and the lateral confinement asymmetry together with the strong Rashba spin-orbit coupling present in WSe$_2$ material is analyzed, and its impact on valley polarization is discussed. For weaker interactions, an investigation of the pair correlation function reveals a valley-antiferromagnetic phase. For low hole densities, a formation of a zigzag Wigner crystal phase is predicted. The impact of various hole liquid phases on transport in a high mobility quasi-one dimensional channel is discussed. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 10 pages, 10 figures

Optical Properties of Gated Bilayer Graphene Quantum Dots with Trigonal War**

Authors: Matthew Albert, Daniel Miravet, Yasser Saleem, Katarzyna Sadecka, Marek Korkusinski, Gabriel Bester, Pawel Hawrylak

Abstract: We determine the optical properties of gated bilayer graphene quantum dots with trigonal war** (TW) of single-particle energy spectra. The lateral structure of metallic gates confines electrons and holes in a quantum dot (QD) electrostatically. The gated bilayer graphene energy spectrum is characterized by two K-valleys surrounded by three minivalleys with energies depending on the applied verti… ▽ More We determine the optical properties of gated bilayer graphene quantum dots with trigonal war** (TW) of single-particle energy spectra. The lateral structure of metallic gates confines electrons and holes in a quantum dot (QD) electrostatically. The gated bilayer graphene energy spectrum is characterized by two K-valleys surrounded by three minivalleys with energies depending on the applied vertical electric field. Employing an atomistic tight-binding model, we compute the single-particle QD states and analyze the influence of TW on the energy spectrum as the lateral confining potential depth varies. We find a regime where the QD levels are dominated by the presence of three minivalleys around each K-valley. Next, we compute dipole matrix elements and analyze the oscillator strengths and optical selection rules for optical valence to conduction band transitions. We then include electron-electron interactions by first computing the microscopic Coulomb matrix elements, electron self-energy, and solving the Bethe-Salpeter equation to obtain the excitonic spectrum. Finally, we obtain the absorption spectrum for a shallow confining potential depth, which further amplifies the effects of TW on the optical properties. Our results predict the existence of two degenerate bright exciton states, each built of the three minivalley states that do not exist in the deep confinement regime, where the effects of TW are negligible. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 9 pages, 6 figures

Two qubit gate with macroscopic singlet-triplet qubits in synthetic spin-one chains in InAsP quantum dot nanowires

Authors: Hassan Allami, Daniel Miravet, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a theory of a two qubit gate with macroscopic singlet-triplet (ST) qubits in synthetic spin-one chains in InAsP quantum dot nanowires. The macroscopic topologically protected singlet-triplet qubits are built with two spin-half Haldane quasiparticles. The Haldane quasiparticles are hosted by synthetic spin-one chain realized in chains of InAsP quantum dots embedded in an InP nanowire, wi… ▽ More We present a theory of a two qubit gate with macroscopic singlet-triplet (ST) qubits in synthetic spin-one chains in InAsP quantum dot nanowires. The macroscopic topologically protected singlet-triplet qubits are built with two spin-half Haldane quasiparticles. The Haldane quasiparticles are hosted by synthetic spin-one chain realized in chains of InAsP quantum dots embedded in an InP nanowire, with four electrons each. The quantum dot nanowire is described by a Hubbard-Kanamori (HK) Hamiltonian derived from an interacting atomistic model. Using exact diagonalization and Matrix Product States (MPS) tools, we demonstrate that the low-energy behavior of the HK Hamiltonian is effectively captured by an antiferromagnetic spin-one chain Hamiltonian. Next we consider two macroscopic qubits and present a method for creating a tunable coupling between the two macroscopic qubits by inserting an intermediate control dot between the two chains. Finally, we propose and demonstrate two approaches for generating highly accurate two-ST qubit gates : (1) by controlling the length of each qubit, and (2) by employing different background magnetic fields for the two qubits. △ Less

Submitted 24 April, 2024; originally announced April 2024.

Comments: 13 pages, 8 figures

Electrically Tunable Fine Structure of Negatively Charged Excitons in Gated Bilayer Graphene Quantum Dots

Authors: Katarzyna Sadecka, Yasser Saleem, Daniel Miravet, Matthew Albert, Marek Korkusinski, Gabriel Bester, Pawel Hawrylak

Abstract: We predict here the fine structure of an electrically tunable negatively charged exciton (trion) composed of two electrons and a hole confined in a gated bilayer graphene quantum dot (QD). We start with an atomistic approach, allowing us to compute confined electron and confined hole QD states for a structure containing over one million atoms. Using atomistic wavefunctions we compute Coulomb matri… ▽ More We predict here the fine structure of an electrically tunable negatively charged exciton (trion) composed of two electrons and a hole confined in a gated bilayer graphene quantum dot (QD). We start with an atomistic approach, allowing us to compute confined electron and confined hole QD states for a structure containing over one million atoms. Using atomistic wavefunctions we compute Coulomb matrix elements and self-energies. In the next step, by solving the Bethe-Salpeter-like equation for trions, we describe a negatively charged exciton, built as a strongly interacting interlayer complex of two electrons in the conduction band and one hole in the valence band. Unlike in conventional semiconducting QDs, we show that the trion contains a fine structure composed of ten states arising from the valley and spin degrees of freedom. Finally, we obtain absorption into and emission from the trion states. We predict the existence of bright low-energy states and propose to extract the fine structure of the trion using the temperature dependence of emission spectra. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Atomistic theory of moiré Hofstadter's butterfly in magic-angle graphene

Authors: Alina Wania Rodrigues, Maciej Bieniek, Paweł Potasz, Daniel Miravet, Ronny Thomale, Marek Korkusiński, Paweł Hawrylak

Abstract: We present here a Hofstadter's butterfly spectrum for the magic angle twisted bilayer graphene obtained using an ab initio based multi-million atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin… ▽ More We present here a Hofstadter's butterfly spectrum for the magic angle twisted bilayer graphene obtained using an ab initio based multi-million atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin splitting effects. A nanoribbon geometry is studied, and the quantum size effects for the sample widths up to 1 $μ$m are analyzed both for a large energy window and for the flatband around the Fermi level. For sufficiently wide ribbons, where the role of the finite geometry is minimized, we obtain and plot the Hofstadter spectrum and identify the in-gap Chern numbers by counting the total number of chiral edge states crossing these gaps. Subsequently, we examine the Wannier diagrams to identify the insulating states at charge neutrality. We establish the presence of three types of electronic states: moiré, mixed, and conventional. These states describe both the bulk Landau levels and the edge states crossing gaps in the spectrum. The evolution of the bulk moiré flatband wavefunctions in the magnetic field is investigated, predicting a decay of the electronic density from the moiré centers as the magnetic flux increases. Furthermore, the spatial properties of the three types of edge states are studied, illustrating the evolution of their localization as a function of the nanoribbon momentum. △ Less

Submitted 21 November, 2023; originally announced November 2023.

On-chip indistinguishable photons using III-V nanowire/SiN hybrid integration

Authors: Edith Yeung, David B. Northeast, Jeongwan **, Patrick Laferrière, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We demonstrate on-chip generation of indistinguishable photons based on a nanowire quantum dot. From a growth substrate containing arrays of positioned-controlled single dot nanowires, we select a single nanowire which is placed on a SiN waveguide fabricated on a Si-based chip. Coupling of the quantum dot emission to the SiN waveguide is via the evanescent mode in the tapered nanowire. Post-select… ▽ More We demonstrate on-chip generation of indistinguishable photons based on a nanowire quantum dot. From a growth substrate containing arrays of positioned-controlled single dot nanowires, we select a single nanowire which is placed on a SiN waveguide fabricated on a Si-based chip. Coupling of the quantum dot emission to the SiN waveguide is via the evanescent mode in the tapered nanowire. Post-selected two-photon interference visibilities using continuous wave excitation above-band and into a p-shell of the dot were 100%, consistent with a single photon source having negligible multi-photon emission probability. Visibilities over the entire photon wavepacket, measured using pulsed excitation, were reduced by a factor of 5 when exciting quasi-resonantly and by a factor of 10 for above-band excitation. The role of excitation timing jitter, spectral diffusion and pure dephasing in limiting visibilities over the temporal extent of the photon is investigated using additional measurements of the coherence and linewidth of the emitted photons. △ Less

Submitted 20 August, 2023; originally announced August 2023.

Interacting holes in gated WSe$_2$ quantum dots

Authors: Daniel Miravet, Abdulmenaf Altıntaş, Alina Wania Rodrigues, Maciej Bieniek, Marek Korkusinski, Paweł Hawrylak

Abstract: We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe$_2$ quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave functions are constructed by combining the spin-up and down states of the highest valence bulk bands employing a multi-million atom ab-initio based tight-binding… ▽ More We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe$_2$ quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave functions are constructed by combining the spin-up and down states of the highest valence bulk bands employing a multi-million atom ab-initio based tight-binding model solved in the wave-vector space, allowing to study up to 100 nm radius quantum dots atomistically. The effects of the many-body interactions are determined using the configuration interaction (CI) technique, applied up to $N = 6$ holes occupying up to 6 electronic shells with 42 orbitals. Our results show that N=2 holes are in valley and spin anti-ferromagnetic ground state, independent of the interaction strength and the quantum dot size. However, we predict that higher number of holes can undergo a transition to spontaneously broken symmetry valley and spin polarized ferromagnetic phases, highlighting the interplay between the many-body effects and the quantum dot lateral size and confining potential depth. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Majorana excitons in a Kitaev chain of semiconductor quantum dots in a nanowire

Authors: Mahan Mohseni, Hassan Allami, Daniel Miravet, David J. Gayowsky, Marek Korkusinski, Pawel Hawrylak

Abstract: We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalisation methods we identify the presence of Majorana Zero Modes in the nanowire absorption spectra. We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalisation methods we identify the presence of Majorana Zero Modes in the nanowire absorption spectra. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Comments: 11 pages, 7 figures

Time, momentum, and energy resolved pump-probe tunneling spectroscopy of two-dimensional electron systems

Authors: H. M. Yoo, M. Korkusinski, D. Miravet, K. W. Baldwin, K. West, L. Pfeiffer, P. Hawrylak, R. C. Ashoori

Abstract: Real-time probing of electrons can uncover intricate relaxation mechanisms and many-body interactions hidden in strongly correlated materials. While experimenters have used ultrafast optical pump-probe methods in bulk materials, laser heating and insensitivity below the surface prevent their application to encapsulated low-dimensional electron systems at millikelvin temperatures, home to numerous… ▽ More Real-time probing of electrons can uncover intricate relaxation mechanisms and many-body interactions hidden in strongly correlated materials. While experimenters have used ultrafast optical pump-probe methods in bulk materials, laser heating and insensitivity below the surface prevent their application to encapsulated low-dimensional electron systems at millikelvin temperatures, home to numerous intriguing electronic phases. Here, we introduce time, momentum, and energy resolved pump-probe tunneling spectroscopy (Tr-MERTS). The method allows the injection of electrons at particular energies and observation of their subsequent decay in energy-momentum space. Using Tr-MERTS, we visualize electronic decay processes in Landau levels with lifetimes up to tens of microseconds. Although most observed features agree with simple energy-relaxation, we discover an unexpected splitting in the nonequilibrium energy spectrum in the vicinity of a ferromagnetic state. An exact diagonalization study of the system suggests that the splitting arises from a maximally spin-polarized higher energy state, distinct from a conventional equilibrium skyrmion. Furthermore, we observe time-dependent relaxation of the splitting, which we attribute to single-flipped spins forming topological spin textures. These results establish Tr-MERTS as a powerful tool for studying the dynamics and properties of a two-dimensional electronic system beyond equilibrium. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Approaching transform-limited photons from nanowire quantum dots excited above-band

Authors: Patrick Laferrière, Aria Yin, Edith Yeung, Leila Kusmic, Marek Korkusinski, Payman Rasekh, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is presen… ▽ More We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is present in each device, (ii) dot nucleation proceeds without the formation of a wetting layer, and (iii) the sidewalls of the photonic nanowire are comprised not of etched facets, but of epitaxially grown crystal planes. Using these structures we achieve linewidths of 2x the transform limit, unprecedented for above-band excitation. We also demonstrate a highly nonlinear dependence of the linewidth on both excitation power and temperature which can be described by an independent Boson model that considers both deformation and piezoelectric exciton-phonon coupling. We find that for sufficiently low excitation powers and temperatures, the observed excess broadening is not dominated by phonon dephasing, a surprising result considering the high phonon occupation that occurs with above-band excitation. △ Less

Submitted 29 July, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 107, (2023) 15522

Quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry: magnetism, correlations, and phase transitions

Authors: Yasser Saleem, Amintor Dusko, Moritz Cygorek, Marek Korkusinski, Pawel Hawrylak

Abstract: We describe here a quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry. The simulator consists of a structured lateral gate confining two dimensional electrons in a quantum well into artificial minima arranged in a hexagonal lattice. The sublattice symmetry breaking is generated by forming an artificial triangular graphene quantum dot (ATGQD) with zigzag edges. Th… ▽ More We describe here a quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry. The simulator consists of a structured lateral gate confining two dimensional electrons in a quantum well into artificial minima arranged in a hexagonal lattice. The sublattice symmetry breaking is generated by forming an artificial triangular graphene quantum dot (ATGQD) with zigzag edges. The resulting extended Hubbard model generates tunable ratio of tunneling strength to electron-electron interactions and of sublattice symmetry with control over shape. The validity of the simulator is confirmed for small systems using mean-field and exact diagonalization many-body approaches which show that the ground state changes from a metallic to an antiferromagnetic (AF) phase by varying the distance between sites or depth of the confining potential. The one-electron spectrum of these triangular dots contains a macroscopically degenerate shell at the Fermi level. The shell persists at the mean-field level for weak interactions (metallic phase) but disappears for strong interactions, in the AF phase. We determine the effects of electron-electron interactions on the ground state, the total spin, and the excitation spectrum as a function of filling of the ATGQD. We find that the half-filled charge neutral shell leads to a partially spin polarized state in both metallic and AF regimes in accordance with Liebs theorem. In both regimes a relatively large gap separates the spin polarized ground state to the first excited many-body state at half filling of the degenerate shell. By adding or removing an electron, this gap drops dramatically, and alternate total spin states emerge with energies nearly degenerate to a spin polarized ground state. △ Less

Submitted 3 March, 2022; originally announced March 2022.

Comments: 7 figures, 11 pages

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

Authors: T. Nakagawa, S. Lamoureux, T. Fujita, J. Ritzmann, A. Ludwig, A. D. Wieck, A. Oiwa, M. Korkusinski, A. Sachrajda, D. G. Austing, L. Gaudreau

Abstract: The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inte… ▽ More The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates. △ Less

Submitted 14 November, 2021; originally announced November 2021.

Comments: 17 pages, 4 figures

Unity yield of deterministically positioned quantum dot single photon sources

Authors: Patrick Laferrière, Edith Yeung, Isabelle Miron, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as l… ▽ More We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures

Gate controlled quantum dots in monolayer WSe2

Authors: Justin Boddison-Chouinard, Alex Bogan, Norman Fong, Kenji Watanabe, Takashi Taniguchi, Sergei Studenikin, Andrew Sachrajda, Marek Korkusinski, Abdulmenaf Altintas, Maciej Bieniek, Pawel Hawrylak, Adina Luican-Mayer, Louis Gaudreau

Abstract: Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we… ▽ More Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model. △ Less

Submitted 1 August, 2021; originally announced August 2021.

Comments: 6 pages, 4 figures

Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides

Authors: Abdulmenaf Altıntaş, Maciej Bieniek, Amintor Dusko, Marek Korkusiński, Jarosław Pawłowski, Paweł Hawrylak

Abstract: We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking an… ▽ More We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate. △ Less

Submitted 7 October, 2021; v1 submitted 29 June, 2021; originally announced June 2021.

Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

Authors: Alex Bogan, Sergei Studenikin, Marek Korkusinski, Louis Gaudreau, Jason Phoenix, Piotr Zawadzki, Andy Sachrajda, Lisa Tracy, John Reno, Terry Hargett

Abstract: We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields… ▽ More We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flip** tunneling processes. △ Less

Submitted 6 April, 2021; originally announced April 2021.

Comments: 43 pages, 14 figures

Journal ref: Phys. Rev. B 103, 235310 (2021)

Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires

Authors: Jason Phoenix, Marek Korkusinski, Dan Dalacu, Philip J. Poole, Piotr Zawadzki, Sergei Studenikin, Robin L. Williams, Andrew S. Sachrajda, Louis Gaudreau

Abstract: We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is invest… ▽ More We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies. △ Less

Submitted 14 November, 2021; v1 submitted 13 March, 2021; originally announced March 2021.

Comments: 5 pages, 3 figures

Optimizing lateral quantum dot geometries for reduced exchange noise

Authors: Brandon Buonacorsi, Marek Korkusinski, Bohdan Khromets, Jonathan Baugh

Abstract: For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orb… ▽ More For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: 32 pages, 11 figures (including Appendix)

Accurate and efficient description of interacting carriers in quantum nanostructures by selected configuration interaction and perturbation theory

Authors: Moritz Cygorek, Matthew Otten, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a method to calculate many-body states of interacting carriers in million atom quantum nanostructures based on atomistic tight-binding calculations and a combination of iterative selection of configurations and perturbation theory. This method enables investigations of large excitonic complexes and multi-electron systems with near full configuration interaction accuracy, even though onl… ▽ More We present a method to calculate many-body states of interacting carriers in million atom quantum nanostructures based on atomistic tight-binding calculations and a combination of iterative selection of configurations and perturbation theory. This method enables investigations of large excitonic complexes and multi-electron systems with near full configuration interaction accuracy, even though only a small subspace of the full many-body Hilbert space is sampled, thus saving orders of magnitudes in computational resources. Important advantages of this method are that the convergence is controlled by a single parameter, the threshold, and that ground and excited states can be treated on an equal footing. We demonstrate the extreme efficiency of the method by numerical studies of complexes composed of up to 13 excitons, which requires filling of states up to the fourth electronic shell. We find that the method generally converges fast as a function of the threshold, profiting from a significant enhancement due to the perturbative corrections. The role of the choice of single-particle basis states is discussed. It is found that the algorithm converges faster in the Hartree-Fock basis only for highly charged systems, where Coulomb repulsion dominates. Finally, based on the observation that second order perturbative energy corrections only depend on off-diagonal elements of the many-body Hamiltonian, we present a way to accurately calculate many-body states that requires only a relatively small number of Coulomb matrix elements. △ Less

Submitted 8 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. B 101, 205308 (2020)

Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots

Authors: Moritz Cygorek, Marek Korkusinski, Pawel Hawrylak

Abstract: We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle… ▽ More We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameters for InAs and InP in the wurtzite crystal phase were obtained by ab initio methods corrected by empirical band gaps. The low energy electron and hole states form electronic shells similar to parabolic or cylindrical quantum confinement, only weakly affected by hexagonal symmetry and As fluctuations. The relative alignment of the emission lines from excitons, trions and biexcitons agrees with that for InAs/InP dots in the zincblende phase in that biexcitons and positive trions are only weakly bound. The random distribution of As atoms leads to dot-to-dot fluctuations of a few meV for the single-particle states and the spectral lines. Due to the high symmetry of hexagonal InAsP nanowire quantum dots the exciton fine structure splitting is found to be small, of the order a few $μ$eV with significant random fluctuations in accordance with experiments. △ Less

Submitted 18 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 101, 075307 (2020)

Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

Authors: Alain Delgado, Marek Korkusinski, Pawel Hawrylak

Abstract: We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1) surface by removal of a Hydrogen atom. The electronic properties of DBQD are computed by embedding it in a computational box of Silicon atoms. The surfaces of… ▽ More We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1) surface by removal of a Hydrogen atom. The electronic properties of DBQD are computed by embedding it in a computational box of Silicon atoms. The surfaces of the computational box were constructed by using DFT as implemented in {\sc Abinit} program. The top layer was reconstructed by the formation of Si dimers passivated with H atoms while the bottom layer remained unreconstructed and fully saturated with H atoms. The computational box Hamiltonian was approximated by a tight-binding (TB) Hamiltonian by expanding the electron wave functions as a Linear Combination of Atomic Orbitals and fitting the bandstructure to {\it ab-initio} results. The parametrized TB Hamiltonian was used to model large finite Si(100) boxes (slabs) with number of atoms exceeding present capabilities of {\it ab-initio} calculations. The removal of one hydrogen atom from the reconstructed surface resulted in a DBQD state with wave function strongly localized around the Si atom and energy in the silicon bandgap. The DBQD could be charged with zero, one and two electrons. The Coulomb matrix elements were calculated and the charging energy of a two electron complex in a DBQD obtained. △ Less

Submitted 25 July, 2019; v1 submitted 21 September, 2018; originally announced September 2018.

Comments: 20 Pages, 10 Figures

Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide

Authors: Sofiane Haffouz, Dan Dalacu, Philip J. Poole, Jean Lapointe, Daniel Poitras, Khaled Mnaymneh, Xiaohua Wu, Marek Korkusinski, Robin L. Williams

Abstract: We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly t… ▽ More We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

Authors: Alex Bogan, Sergei Studenikin, Marek Korkusinski, Louis Gaudreau, Piotr Zawadzki, Andy S. Sachrajda, Lisa Tracy, John Reno, Terry Hargett

Abstract: We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped inter… ▽ More We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip** interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flip**, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: 6 pages, 4 figures, and supplementary material

Journal ref: Phys. Rev. Lett. 120, 207701 (2018)

Band nesting, massive Dirac Fermions and Valley Lande and Zeeman effects in transition metal dichalcogenides: a tight-binding model

Authors: M. Bieniek, M. Korkusiński, L. Szulakowska, P. Potasz, I. Ozfidan, P. Hawrylak

Abstract: We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Usin… ▽ More We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Using symmetry arguments, a minimal basis consisting of 3 metal d--orbitals and 3 chalcogen dimer p--orbitals is constructed. The tunneling matrix elements between nearest neighbor metal and chalcogen orbitals are explicitly derived at $K$, $-K$ and $Γ$ points of the Brillouin zone. The nearest neighbor tunneling matrix elements connect specific metal and sulfur orbitals yielding an effective $6\times 6$ Hamiltonian giving correct composition of metal and chalcogen orbitals but not the direct gap at $K$ points. The direct gap at $K$, correct masses and conduction band minima at $Q$ points responsible for band nesting are obtained by inclusion of next neighbor Mo--Mo tunneling. The parameters of the next nearest neighbor model are successfully fitted to MX$_2$ (M=Mo, X=S) density functional (DFT) ab--initio calculations of the highest valence and lowest conduction band dispersion along $K-Γ$ line in the Brillouin zone. The effective two--band massive Dirac Hamiltonian for MoS$_2$, Lande g--factors and valley Zeeman splitting are obtained. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 97, 085153 (2018)

Electron-Electron interactions, topological phase and optical properties of a charged artificial benzene ring

Authors: Isil Ozfidan, Milos Vladisavljevic, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a theory of the electronic and optical properties of a charged artificial benzene ring (ABR). The ABR is described by the extended Hubbard model solved using exact diagonalization methods in both real and Fourier space as a function of tunneling matrix element t, Hubbard on-site repulsion U and inter-dot interaction V. In the strongly interacting case we present exact analytical results… ▽ More We present a theory of the electronic and optical properties of a charged artificial benzene ring (ABR). The ABR is described by the extended Hubbard model solved using exact diagonalization methods in both real and Fourier space as a function of tunneling matrix element t, Hubbard on-site repulsion U and inter-dot interaction V. In the strongly interacting case we present exact analytical results for the spectrum of the hole in a half-filled ABR dressed by spin excitations of remaining electrons. The spectrum is interpreted in terms of the appearance of a topological phase associated with an effective gauge field piercing through the ring. We show that the maximally spin polarized (S=5/2) and maximally spin depolarised (S=1/2) states are the lowest energy, orbitally non degenerate, states. We discuss the evolution of the phase diagram and level crossings as interactions are switched off and the ground state becomes spin non-degenerate but orbitally degenerate S=1/2. We present a theory of optical absorption spectra and show that the evolution of the ground and excited states, level crossings and presence of artificial gauge can be detected optically. △ Less

Submitted 1 November, 2015; originally announced November 2015.

Comments: 9 figures, 9 pages

Electron-electron interaction mediated indirect coupling of electron and magnetic ion or nuclear spins in self-assembled quantum dots

Authors: Udson C. Mendes, Marek Korkusinski, Pawel Hawrylak

Abstract: We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions ar… ▽ More We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions are included, the electrons occupying finite angular momentum orbitals interact with the localized spin. This effective interaction is obtained using exact diagonalization of the microscopic Hamiltonian as a function of the number of electronic shells, shell spacing, and anisotropy of the electron-Mn exchange interaction. The effective interaction can be engineered to be either ferromagnetic or antiferromagnetic by tuning the parameters of the quantum dot. △ Less

Submitted 20 May, 2014; originally announced May 2014.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 89, 195308 (2014)

Quantum strain sensor with a topological insulator HgTe quantum dot

Authors: Marek Korkusinski, Pawel Hawrylak

Abstract: We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot,… ▽ More We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian. △ Less

Submitted 9 May, 2014; originally announced May 2014.

Comments: 4 figures

Journal ref: Scientific Reports 4, 4903 (2014)

Optical properties of charged quantum dots doped with a single magnetic impurity

Authors: U. C. Mendes, M. Korkusinski, A. H. Trojnar, P. Hawrylak

Abstract: We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscillators. The electron-electron, electron-hole Coulomb as well as the short-range electron spin-Mn spi… ▽ More We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscillators. The electron-electron, electron-hole Coulomb as well as the short-range electron spin-Mn spin and hole spin-Mn spin contact exchange interactions are included. The electronic states of the photo-excited electron-hole-Mn complex and of the final electron-Mn complex are expanded in a finite number of configurations and the full interacting Hamiltonian is diagonalized numerically. The emission spectrum is predicted as a function of photon energy for a given number of electrons and different number of confined electronic quantum dot shells. We show how emission spectra allow to identify the number of electronic shells, the number of electrons populating these shells and, most importantly, their spin. We show that electrons not interacting directly with the spin of Mn ion do so via electron-electron interactions. This indirect interaction is a strong effect even when Mn impurity is away from the quantum dot center. △ Less

Submitted 16 September, 2013; v1 submitted 1 September, 2013; originally announced September 2013.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. B 88, 115306 (2013)

Spin textures in strongly coupled electron spin and magnetic or nuclear spin systems in quantum dots

Authors: Ramin M. Abolfath, Marek Korkusinski, Thomas Brabec, Pawel Hawrylak

Abstract: Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenege in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion/nuclear spin systems break down at low temperature and form a non-trivial anti-ferromagnetic spatially or… ▽ More Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenege in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion/nuclear spin systems break down at low temperature and form a non-trivial anti-ferromagnetic spatially ordered spin-texture of magneto-polarons. The spatially ordered combined electron-magnetic ion spin-texture, associated with spontaneous symmetry-breaking in the parity of electronic charge density and magnetization of magnetic ions, emerge from both ab-initio density functional approach to the electronic system coupled with mean-field approximation for the magnetic/nuclear spin system and fully mircoscopic exact diagonalization of small systems. The predicted phase diagram determines the critical temperature as a function of coupling strength and identifies possible phases of the strongly coupled spin system. This prediction may arrest fluctuations in spin system and open the way to control, manipulate and prepare magnetic and nuclear spin ensembles in semiconductor nanostructures. △ Less

Submitted 17 April, 2012; v1 submitted 18 December, 2011; originally announced December 2011.

Comments: 4 pages and 3 figures, accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 108, 247203 (2012)

Theory of highly excited semiconductor nanostructures including Auger coupling: exciton-bi-exciton mixing in CdSe nanocrystals

Authors: Marek Korkusinski, Oleksandr Voznyy, Pawel Hawrylak

Abstract: We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged mul… ▽ More We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged multi-exciton complexes is given. The general approach is illustrated by analyzing the coupling of biexciton and exciton in CdSe spherical nanocrystals. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting and surface passivation. For each number of electron-hole pairs the many-body spectrum is computed in the configuration-interaction approach. The low-energy correlated biexciton levels are broken into charged complexes: a hole and a negatively charged trion and an electron and a positively charged trion. Out of a highly excited exciton spectrum a subspace coupled to bi-exciton levels via Auger processes is identified. The interaction between correlated bi-exciton and exciton states is treated using exact diagonalization techniques. This allows to extract the spectral function of the biexciton and relate its characteristic width and amplitude to the characteristic amplitude and timescale of the coherent time evolution of the coupled system. It is shown that this process can be described by the Fermi's Golden Rule only if a fast relaxation of the excitonic subsystem is accounted for. △ Less

Submitted 30 September, 2011; originally announced September 2011.

Comments: 9 figures

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot

Authors: A. Trojnar, M. Korkusinski, E. Kadantsev, P. Hawrylak, M. Goryca, T. Kazimierczuk, P. Kossacki, P. Wojnar, M. Potemski

Abstract: We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photolumin… ▽ More We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction. △ Less

Submitted 4 May, 2011; originally announced May 2011.

Comments: 11 pages, 4 figures, submitted to PRL

Fine structure and size dependence of exciton and bi-exciton optical spectra in CdSe nanocrystals

Authors: Marek Korkusinski, Oleksandr Voznyy, Pawel Hawrylak

Abstract: Theory of electronic and optical properties of exciton and bi-exciton complexes confined in CdSe spherical nanocrystals is presented. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting, spin-orbit interactions, and model surface passivation. The optically excited states are expanded in electron-hole config… ▽ More Theory of electronic and optical properties of exciton and bi-exciton complexes confined in CdSe spherical nanocrystals is presented. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting, spin-orbit interactions, and model surface passivation. The optically excited states are expanded in electron-hole configurations and the many-body spectrum is computed in the configuration-interaction approach. Results demonstrate that the low-energy electron spectrum is organized in shells ($s$, $p$, ...), whilst the valence hole spectrum is composed of four low-lying, doubly degenerate states separated from the rest by a gap. As a result, the bi-exciton and exciton spectrum is composed of a manifold of closely lying states, resulting in a fine structure of exciton and bi-exciton spectra. The quasi-degenerate nature of the hole spectrum results in a correlated bi-exciton state, which makes it slowly convergent with basis size. We carry out a systematic study of the exciton and bi-exciton emission spectra as a function of the nanocrystal diameter and find that the interplay of repulsion between constituent excitons and correlation effects results in a change of the sign of bi-exciton binding energy from negative to positive at a critical nanocrystal size. △ Less

Submitted 9 November, 2010; v1 submitted 30 September, 2010; originally announced October 2010.

Comments: 13 pages

Valence holes as Luttinger spinor based qubits in quantum dots

Authors: Chang-Yu Hsieh, Ross Cheriton, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a theory of valence holes as Luttinger spinor based qubits in p-doped self-assembled quantum dots within the 4-band $k\cdot p$ formalism. The two qubit levels are identified with the two chiralities of the doubly degenerate ground state. We show that single qubit operations can be implemented with static magnetic field applied along the $z$ and $x$ directions, acting analogously to th… ▽ More We present a theory of valence holes as Luttinger spinor based qubits in p-doped self-assembled quantum dots within the 4-band $k\cdot p$ formalism. The two qubit levels are identified with the two chiralities of the doubly degenerate ground state. We show that single qubit operations can be implemented with static magnetic field applied along the $z$ and $x$ directions, acting analogously to the $\hatσ_z$ and $\hatσ_x$ operators in the qubit subspace respectively. The coupling of two dots and hence the double qubit operations are shown to be sensitive to the orientation of the two quantum dots. For vertical qubit arrays, there exists an optimal qubit separation suitable for the voltage control of qubit-qubit interactions. △ Less

Submitted 8 April, 2010; v1 submitted 14 August, 2009; originally announced August 2009.

Magnetism and correlations in fractionally filled degenerate shells of graphene quantum dots

Authors: A. D. Guclu, P. Potasz, O. Voznyy, M. Korkusinski, P. Hawrylak

Abstract: When an electron is confined to a triangular atomic thick layer of graphene [1-5] with zig-zag edges, its energy spectrum collapses to a shell of degenerate states at the Fermi level (Dirac point) [6-9]. The degeneracy is proportional to the edge size and can be made macroscopic. This opens up the possibility to design a strongly correlated electronic system as a function of fractional filling o… ▽ More When an electron is confined to a triangular atomic thick layer of graphene [1-5] with zig-zag edges, its energy spectrum collapses to a shell of degenerate states at the Fermi level (Dirac point) [6-9]. The degeneracy is proportional to the edge size and can be made macroscopic. This opens up the possibility to design a strongly correlated electronic system as a function of fractional filling of the zero-energy shell, in analogy to the fractional quantum Hall effect in a quasi-two-dimensional electron gas[10], but without the need for a high magnetic field. In this work we show that electronic correlations, beyond the Hubbard model[6,7] and mean-field density functional theory (DFT) [7,8] play a crucial role in determining the nature of the ground state and the excitation spectrum of triangular graphene quantum dots as a function of dot size and filling fraction of the shell of zero-energy states. The interactions are treated by a combination of DFT, tight-binding, Hartree-Fock and configuration interaction methods (TB-HF-CI) and include all scattering and exchange terms within second nearest neighbors as well as interaction with metallic gate. We show that a half filled charge neutral shell leads to full spin polarization of the island but this magnetic moment is completely destroyed by the addition of a single electron, in analogy to the effect of skyrmions on the quantum Hall ferromagnet [11-14] and spin depolarization in electrostatically defined semiconductor quantum dots[15-18]. The depolarization of the ground state is predicted to result in blocking of current through a graphene quantum dot due to spin blockade (SB) [18]. △ Less

Submitted 11 August, 2009; v1 submitted 30 July, 2009; originally announced July 2009.

Comments: v2: minor corrections, new format

Multimillion Atom Simulations with NEMO 3-D

Authors: Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, Gerhard Klimeck

Abstract: The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representa… ▽ More The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and do** configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires. △ Less

Submitted 13 January, 2009; originally announced January 2009.

Comments: 35 pages; 37 figures

Spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot

Authors: F. Delgado, Y. -P. Shim, M. Korkusinski, L. Gaudreau, S. A. Studenikin, A. S. Sachrajda, P. Hawrylak

Abstract: We present a theory for spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot. We show that to understand the Aharonov-Bohm (AB) effect in an interacting electron system within a triple quantum dot molecule (TQD) where the dots lie in a ring configuration requires one to not only consider electron charge but also spin. Using a Hubbard model supported by microscopic calculatio… ▽ More We present a theory for spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot. We show that to understand the Aharonov-Bohm (AB) effect in an interacting electron system within a triple quantum dot molecule (TQD) where the dots lie in a ring configuration requires one to not only consider electron charge but also spin. Using a Hubbard model supported by microscopic calculations we show that, by localizing a single electron spin in one of the dots, the current through the TQD molecule depends not only on the flux but also on the relative orientation of the spin of the incoming and localized electrons. AB oscillations are predicted only for the spin singlet electron complex resulting in a magnetic field tunable "spin valve". △ Less

Submitted 9 September, 2008; originally announced September 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 226810 (2008)

Antibonding ground states in semiconductor artificial molecules

Authors: M. F. Doty, J. I. Climente, M. Korkusinski, M. Scheibner, A. S. Bracker, P. Hawrylak, D. Gammon

Abstract: The spin-orbit interaction is a crucial element of many semiconductor spintronic technologies. Here we report the first experimental observation, by magneto-optical spectroscopy, of a remarkable consequence of the spin-orbit interaction for holes confined in the molecular states of coupled quantum dots. As the thickness of the barrier separating two coupled quantum dots is increased, the molecul… ▽ More The spin-orbit interaction is a crucial element of many semiconductor spintronic technologies. Here we report the first experimental observation, by magneto-optical spectroscopy, of a remarkable consequence of the spin-orbit interaction for holes confined in the molecular states of coupled quantum dots. As the thickness of the barrier separating two coupled quantum dots is increased, the molecular ground state changes character from a bonding orbital to an antibonding orbital. This result is counterintuitive, and antibonding molecular ground states are never observed in natural diatomic molecules. We explain the origin of the reversal using a four band k.p model that has been validated by numerical calculations that account for strain. The discovery of antibonding molecular ground states provides new opportunities for the design of artificially structured materials with complex molecular properties that cannot be achieved in natural systems. △ Less

Submitted 18 April, 2008; originally announced April 2008.

Comments: 10 pages, 4 figures, with additional 5 pages of supplementary material

Theory of spin, electronic and transport properties of the lateral triple quantum dot molecule in a magnetic field

Authors: F. Delgado, Y. -P. Shim, M. Korkusinski, P. Hawrylak

Abstract: We present a theory of spin, electronic and transport properties of a few-electron lateral triangular triple quantum dot molecule in a magnetic field. Our theory is based on a generalization of a Hubbard model and the Linear Combination of Harmonic Orbitals combined with Configuration Interaction method (LCHO-CI) for arbitrary magnetic fields. The few-particle spectra obtained as a function of t… ▽ More We present a theory of spin, electronic and transport properties of a few-electron lateral triangular triple quantum dot molecule in a magnetic field. Our theory is based on a generalization of a Hubbard model and the Linear Combination of Harmonic Orbitals combined with Configuration Interaction method (LCHO-CI) for arbitrary magnetic fields. The few-particle spectra obtained as a function of the magnetic field exhibit Aharonov-Bohm oscillations. As a result, by changing the magnetic field it is possible to engineer the degeneracies of single-particle levels, and thus control the total spin of the many-electron system. For the triple dot with two and four electrons we find oscillations of total spin due to the singlet-triplet transitions occurring periodically in the magnetic field. In the three-electron system we find a transition from a magnetically frustrated to the spin-polarized state. We discuss the impact of these phase transitions on the addition spectrum and the spin blockade of the lateral triple quantum dot molecule. △ Less

Submitted 11 July, 2007; originally announced July 2007.

Comments: 30 pages (one column), 9 figures

Journal ref: Phys. Rev. B 76, 115332 (2007)

Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot

Authors: Michael E. Reimer, Marek Korkusinski, Jacques Lefebvre, Jean Lapointe, Philip J. Poole, Geof C. Aers, Dan Dalacu, W. Ross McKinnon, Simon Frederick, Pawel Hawrylak, Robin L. Williams

Abstract: Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-… ▽ More Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry. △ Less

Submitted 7 June, 2007; originally announced June 2007.

Comments: 4 pages, 4 figures submitted to Physical Review Letters

Optical readout of charge and spin in a self-assembled quantum dot in a strong magnetic field

Authors: M. Korkusinski, P. Hawrylak, A. Babinski, M. Potemski, S. Raymond, Z. Wasilewski

Abstract: We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of elec… ▽ More We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of electrons appears as a manifold of closely spaced emission lines, while spin flips appear as discontinuities of emission lines. The number of multiplets and discontinuities measures the number of carriers and their spin. We present a complete analysis of the emission spectrum of a single quantum dot with N=4 electrons and a single hole, calculated and measured in magnetic fields up to 23 Tesla. △ Less

Submitted 6 June, 2007; originally announced June 2007.

Comments: 9 pages, 3 figures, submitted to Europhysics Letters

LCHO-CI method for the voltage control of exchange interaction in gated lateral quantum dot networks

Authors: Irene Puerto-Gimenez, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a computational LCHO-CI approach allowing for the simulation of exchange interactions in gated lateral quantum dot networks. The approach is based on single-particle states calculated using a linear combination of harmonic orbitals (LCHO) of each of the dots, and a configuration interaction (CI) approach to the interacting electron problem. The LCHO-CI method is applied to a network o… ▽ More We present a computational LCHO-CI approach allowing for the simulation of exchange interactions in gated lateral quantum dot networks. The approach is based on single-particle states calculated using a linear combination of harmonic orbitals (LCHO) of each of the dots, and a configuration interaction (CI) approach to the interacting electron problem. The LCHO-CI method is applied to a network of three quantum dots with one electron spin per dot, and a Heisenberg spin Hamiltonian is derived. The manipulation of spin states of a three-spin molecule by applying bias to one of the dots is demonstrated and related to the bias dependence of effective exchange interaction parameters. △ Less

Submitted 6 June, 2007; originally announced June 2007.

Comments: 23 pages, 7 figures, submitted to Phys. Rev. B

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

Authors: Marek Korkusinski, Irene Puerto Gimenez, Pawel Hawrylak, Louis Gaudreau, Sergei A. Studenikin, Andrew S. Sachrajda

Abstract: We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy level… ▽ More We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device. △ Less

Submitted 26 February, 2007; v1 submitted 6 October, 2006; originally announced October 2006.

Comments: 31 pages, 7 figures, accepted to March 15, 2007 issue of Phys. Rev. B, vol. 75

Stability Diagram of a Few-Electron Triple Dot

Authors: Louis Gaudreau, Sergei Studenikin, Andy Sachrajda, Piotr Zawadzki, Alicia Kam, Jean Lapointe, Marek Korkusinski, Pawel Hawrylak

Abstract: Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a sign… ▽ More Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models. △ Less

Submitted 8 September, 2008; v1 submitted 25 January, 2006; originally announced January 2006.

Journal ref: PRL 97, 036807 (2006)

Voltage-controlled coded qubit based on electron spin

Authors: Pawel Hawrylak, Marek Korkusinski

Abstract: We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and |1L>, reside in a degenerate subspace of total spin S=1/2 states. We demonstrate how applying voltages to specific gates changes the one-electron properties of… ▽ More We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and |1L>, reside in a degenerate subspace of total spin S=1/2 states. We demonstrate how applying voltages to specific gates changes the one-electron properties of the structure, and show how electron-electron interaction translates these changes into the manipulation of the two lowest energy states of the three-electron complex. △ Less

Submitted 5 October, 2006; v1 submitted 20 November, 2004; originally announced November 2004.

Comments: 11 pages + 3 figures

Journal ref: Solid State Communications, vol. 136, pp. 508-512 (2005)

Configuration interaction method for Fock-Darwin states

Authors: Andreas Wensauer, Marek Korkusinski, Pawel Hawrylak

Abstract: We present a configuration interaction method optimized for Fock-Darwin states of two-dimensional quantum dots with an axially symmetric, parabolic confinement potential subject to a perpendicular magnetic field. The optimization explicitly accounts for geometrical and dynamical symmetries of the Fock-Darwin single-particle states and for many-particle symmetries associated with the center-of-ma… ▽ More We present a configuration interaction method optimized for Fock-Darwin states of two-dimensional quantum dots with an axially symmetric, parabolic confinement potential subject to a perpendicular magnetic field. The optimization explicitly accounts for geometrical and dynamical symmetries of the Fock-Darwin single-particle states and for many-particle symmetries associated with the center-of-mass motion and with the total spin. This results in a basis set of reduced size and improved accuracy. The numerical results compare well with the quantum Monte Carlo and stochastic variational methods. The method is illustrated by the evolution of a strongly correlated few-electron droplet in a magnetic field in the regime of the fractional quantum Hall effect. △ Less

Submitted 8 December, 2003; v1 submitted 11 April, 2003; originally announced April 2003.

Comments: 17 pages, 3 figures, ReVTeX4, submitted to Solid State Communications

Spin-blockade spectroscopy of a two-level artificial molecule

Authors: M. Pioro-Ladriere, M. Ciorga, J. Lapointe, P. Zawadzki, M. Korkusinski, P. Hawrylak, A. S. Sachrajda

Abstract: Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states… ▽ More Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior. △ Less

Submitted 29 May, 2003; v1 submitted 20 January, 2003; originally announced January 2003.

Comments: 4 pages, 4 figures; revised version with a minor change in Fig.2 and additional inset in Fig.3.;accepted by PRL

Theory of the spin singlet filling factor $ν=2$ quantum Hall droplet

Authors: Andreas Wensauer, Marek Korkusinski, Pawel Hawrylak

Abstract: A theory of electronic properties of a spin-singlet quantum Hall droplet at filling factor $ν=2$ in a parabolic quantum dot is developed. The excitation spectrum and the stability of the droplet due to the transfer of electrons into the second Landau level at low magnetic fields and due to spin flip at the edge at higher magnetic fields is determined using Hartree-Fock, exact diagonalisation, an… ▽ More A theory of electronic properties of a spin-singlet quantum Hall droplet at filling factor $ν=2$ in a parabolic quantum dot is developed. The excitation spectrum and the stability of the droplet due to the transfer of electrons into the second Landau level at low magnetic fields and due to spin flip at the edge at higher magnetic fields is determined using Hartree-Fock, exact diagonalisation, and spin-density functional methods. We show that above a critical number of electrons $N_c$ the unpolarised $ν=2$ quantum Hall droplet ceases to be a ground state in favor of spin-polarised phases. We determine the characteristic pattern in the addition and current-amplitude Coulomb blockade spectra associated with the stable $ν=2$ droplet. We show that the spin transition of the droplet at a critical number of electrons is accompanied by the reversal of the current amplitude modulation at the $ν=2$ line, as observed in recent experiments. △ Less

Submitted 17 April, 2002; originally announced April 2002.

Comments: 27 pages, 12 figures

The Collapse of the Spin-Singlet Phase in Quantum Dots

Authors: M. Ciorga, A. Wensauer, M. Pioro-Ladriere, M. Korkusinski, Jordan Kyriakidis, A. S. Sachrajda, P. Hawrylak

Abstract: We present experimental and theoretical results on a new regime in quantum dots in which the filling factor 2 singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to this new regime as a function of the number of electrons. The key experimental observation is a reversal of the phase in the systematic oscillation of the ampli… ▽ More We present experimental and theoretical results on a new regime in quantum dots in which the filling factor 2 singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to this new regime as a function of the number of electrons. The key experimental observation is a reversal of the phase in the systematic oscillation of the amplitude of Coulomb blockade peaks as the number of electrons is increased above a critical number. It is found theoretically that correlations are crucial to the existence of the new phases. △ Less

Submitted 28 March, 2002; v1 submitted 11 October, 2001; originally announced October 2001.

Comments: REVTeX4, 4 pages, 4 figures, to appear in PRL

Journal ref: Phys. Rev. Lett. 88, 256804 (2002)