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Open-tunneled oxides as intercalation host for multivalent ion (Ca and Al) batteries: A DFT study
Authors:
Joy Datta,
Nikhil Koratkar,
Dibakar Datta
Abstract:
Lithium-ion batteries (LIBs) are ubiquitous in everyday applications. However, Lithium (Li) is a limited resource on the planet and is therefore not sustainable. As an alternative to lithium, earth-abundant and cheaper multivalent metals such as aluminum (Al) and calcium (Ca) have been actively researched in battery systems. However, finding suitable intercalation hosts for multivalent-ion batteri…
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Lithium-ion batteries (LIBs) are ubiquitous in everyday applications. However, Lithium (Li) is a limited resource on the planet and is therefore not sustainable. As an alternative to lithium, earth-abundant and cheaper multivalent metals such as aluminum (Al) and calcium (Ca) have been actively researched in battery systems. However, finding suitable intercalation hosts for multivalent-ion batteries is urgently needed. Open-tunneled oxides are a particular category of microparticles distinguished by the presence of integrated one-dimensional channels or nanopores. This work focuses on two promising open-tunnel oxides, viz: Niobium Tungsten Oxide (NTO) and Molybdenum Vanadium Oxide (MoVO). We find that the MoVO structure can adsorb greater numbers of multivalent ions than NTO due to its larger surface area and different shapes. The MoVO structure can adsorb Ca, Li, and Al ions with adsorption potential at around 4 to 5 eV. However, the adsorption potential for hexagonal channels of Al ion drops to 1.73 eV because of less channel area. NTO structure has an insertion/adsorption potential of 4.4 eV, 3.4 eV, and 0.9 eV for one Li, Ca, and Al, respectively. In general, Ca ion is more adsorbable than Al ion in both MoVO and NTO structures. Bader charge analysis and charge density plot reveals the role of charge transfer and ion size on the insertion of multivalent ions such as Ca and Al into MoVO and NTO systems. Our results provide general guidelines to explore other multivalent ions for battery applications.
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Submitted 22 March, 2023;
originally announced March 2023.
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Corrosion Resistance of Sulfur-Selenium Alloy Coatings
Authors:
Sandhya Susarla,
Govind Chilkoor,
Yufei Cui,
Taib Arif,
Thierry Tsafack,
Anand Puthirath,
Parambath M. Sudeep,
Jawahar R. Kalimuthu,
Aly Hassan,
Samuel Castro-Pardo,
Morgan Barnes,
Rafael Verduzco,
Tobin Filleter,
Nikhil Koratkar,
Venkataramana Gadhamshetty,
Muhammad M Rahman,
Pulickel M. Ajayan
Abstract:
Despite decades of research, metallic corrosion remains a long-standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with high stiffness and ductility that can serve as a universal corrosion-resistant coating with prot…
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Despite decades of research, metallic corrosion remains a long-standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with high stiffness and ductility that can serve as a universal corrosion-resistant coating with protection efficiency of ~99.9% for steel in a wide range of diverse environments. S-Se coated mild steel shows a corrosion rate that is 6-7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate-reducing bacterial medium) environments. The coating is strongly adhesive and mechanically robust. We attribute the high corrosion resistance of the alloy in diverse environments to its semi-crystalline, non-porous, anti-microbial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species.
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Submitted 4 September, 2020;
originally announced September 2020.
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Ferroelectric Polarization in Antiferroelectric Chalcogenide Perovskite BaZrS3 Thin Film
Authors:
Juhi Pandey,
Debjit Ghoshal,
Dibyendu Dey,
Tushar Gupta,
A. Taraphder,
Nikhil Koratkar,
Ajay Soni
Abstract:
Bulk chalcogenide perovskite BaZrS3 (BZS), with a direct band gap in visible region, is an important photovoltaic material, albeit with limited applicability owing to its antiferroelectric (AF) nature. Presently, ferroelectric (FE) perovskite-based photovoltaics are attracting enormous attention for environmental stability and better energy conversion efficiency through enhanced charge separation,…
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Bulk chalcogenide perovskite BaZrS3 (BZS), with a direct band gap in visible region, is an important photovoltaic material, albeit with limited applicability owing to its antiferroelectric (AF) nature. Presently, ferroelectric (FE) perovskite-based photovoltaics are attracting enormous attention for environmental stability and better energy conversion efficiency through enhanced charge separation, owing to loss of center of inversion symmetry. We report on antiferroelectric-ferroelectric (AF-FE) phases of BZS thin film, grown with chemical vapor deposition (CVD), using temperature-dependent Raman investigations and first-principles calculations. The origin of FE phases is established from anomalous behavior of A7g ~ 300 cm-1 and B1g5 ~ 420 cm-1 modes, which involves the vibration of atoms at apical site of ZrS6 octahedra. Additionally, below 60 K, B1g1 and B2g2 ( ~ 85 cm-1) modes appear whereas B12g (~ 60 cm-1) disappears to stabilize the Pnma structure against ferroelectricity by local distortion. Here, B2g2 and B1g2 involve vibrations of Ba atoms in AF manner while B1g1 involves, in addition, the rotation of octahedra as well. Our first-principles calculations confirm that FE appears as a result of loss of center of inversion symmetry in ZrS6 octahedra due to existence of oxygen (O) impurities placed locally at apical sites of sulfur (S) atom.
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Submitted 30 April, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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An Environmentally Stable and Lead-Free Chalcogenide Perovskite
Authors:
Tushar Gupta,
Debjit Ghoshal,
Anthony Yoshimura,
Swastik Basu,
Philippe K. Chow,
Aniruddha S. Lakhnot,
Juhi Pandey,
Jeffrey M. Warrender,
Harry Efstathiadis,
Ajay Soni,
Eric Osei-Agyemang,
Ganesh Balasubramanian,
Shengbai Zhang,
Su-Fei Shi,
Toh-Ming Lu,
Vincent Meunier,
Nikhil Koratkar
Abstract:
Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in mois…
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Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light-induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors - weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo-responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.
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Submitted 15 December, 2019;
originally announced December 2019.
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Catalyst-Free And Morphology-Controlled Growth Of 2D Perovskite Nanowires for Polarized Light Detection
Authors:
Debjit Ghoshal,
Tianmeng Wang,
Hsin-Zon Tsai,
Shao-Wen Chang Michael Crommie Nikhil Koratkar,
Su-Fei Shi
Abstract:
Two-dimensional (2D) perovskites or Ruddleson Popper (RP) perovskites have emerged as a class of material inheriting the superior optoelectronic properties of two different materials: perovskites and 2D materials. The large exciton binding energy and natural quantum well structure of 2D perovskite not only make these materials ideal platforms to study light-matter interactions, but also render the…
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Two-dimensional (2D) perovskites or Ruddleson Popper (RP) perovskites have emerged as a class of material inheriting the superior optoelectronic properties of two different materials: perovskites and 2D materials. The large exciton binding energy and natural quantum well structure of 2D perovskite not only make these materials ideal platforms to study light-matter interactions, but also render them suitable for fabrication of various functional optoelectronic devices. Nanoscale structuring and morphology control have led to semiconductors with enhanced functionalities. For example, nanowires of semiconducting materials have been extensively used for important applications like lasing and sensing. Catalyst-assisted Vapor Liquid Solid (VLS) techniques, and template assisted growth, have conventionally been used for nanowire growth. However, catalyst and template-free scalable growth with morphology control of 2D perovskites have remained elusive. In this manuscript, we demonstrate a facile approach for morphology-controlled growth of high-quality nanowires of 2D perovskite, (BA)2PbI4. We demonstrate that the photoluminescence (PL) from the nanowires are highly polarized with a polarization ratio as large as ~ 0.73, which is one of the largest reported for perovskites. We further show that the photocurrent from the device based on the nanowire/graphene heterostructure is also sensitive to the polarization of the incident light with the photocurrent anisotropy ratio of ~3.62 (much larger than the previously reported best value of 2.68 for perovskite nanowires), thus demonstrating the potential of these nanowires as highly efficient photodetectors of polarized light.
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Submitted 13 May, 2019;
originally announced May 2019.
