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Resonant Raman Scattering of Few Layers CrBr$_3$
Authors:
Łucja Kipczak,
Arka Karmakar,
Magdalena Grzeszczyk,
Róża Janiszewska,
Tomasz Woźniak,
Zhaolong Chen,
Jan Pawłowski,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Maciej R. Molas
Abstract:
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV.…
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We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr$_3$, 3.06~eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr$_3$ and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the A$_\textrm{g}$ and E$_\textrm{g}$ modes. The evolution of phonon modes with temperature for a 20 L CrBr$_3$ encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature ($T_\textrm{C} \approx 50$ K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3 - 5 L. This observation is attributed to strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers.
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Submitted 20 December, 2023;
originally announced December 2023.
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Electrical excitation of carbon centers in hexagonal boron nitride with tuneable quantum efficiency
Authors:
M. Grzeszczyk,
K. Vaklinova,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
M. Koperski
Abstract:
Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately…
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Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately, such defect centers embedded in highly insulating crystals have been notoriously difficult to excite electrically. Herewith, we present a realisation of insulating light-emitting diodes based on carbon centers in hexagonal boron nitride. The rational design of the vertical tunnelling devices via van der Waals technology enabled us to control the charge dynamics related to non-radiative tunelling, defect-to-band electroluminescence, and intradefect electroluminescence. The fundamental understanding of the tunnelling events enabled us to achieve high efficiency of electrical excitation, which exceeded by a few orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. A combination of a Stark effect and screening by band electrons provide a control knob for tuning the energy of emission. With this work, we solve an outstanding problem of creating electrically driven devices realised with defect centers in wide-band-gap crystals, which are relevant in the domain of optoelectronics, telecommunication, computation, or sensing.
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Submitted 23 May, 2023;
originally announced May 2023.
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Dielectric environment sensitivity of carbon centres in hexagonal boron nitride
Authors:
Danis I. Badrtdinov,
Carlos Rodriguez-Fernandez,
Magdalena Grzeszczyk,
Zhizhan Qiu,
Kristina Vaklinova,
Pengru Huang,
Alexander Hampel,
Kenji Watanabe,
Takashi Taniguchi,
Lu Jiong,
Marek Potemski,
Cyrus E. Dreyer,
Maciej Koperski,
Malte Rösner
Abstract:
A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defec…
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A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's optoelectronic properties depend on the specifics of the atomic environment. Here we explore the mechanisms by which the environment can influence the properties of carbon impurity centres in hexagonal boron nitride (hBN). We compare the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies, modifications to their phonon sidebands, and enhancements of their inhomogeneous broadenings. To disentangle the various mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening environment of the defect center, we combine ab-initio calculations based on a density-functional theory with a quantum embedding approach. By studying a variety of carbon-based defects embedded in monolayer and bulk hBN, we demonstrate that the dominant effect of the change in the environment is the screening of the density-density Coulomb interactions within and between the defect orbitals. Our comparative analysis of the experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors of dielectric environments.
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Submitted 14 May, 2023;
originally announced May 2023.
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Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
Authors:
Mehdi Arfaoui,
Natalia Zawadzka,
Sabrine Ayari,
Zhaolong Chen,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Sihem Jaziri,
Maciej R. Molas
Abstract:
To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, a…
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To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. Combining \textit{ab initio} calculations and EMA methods, we investigate the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly nonhydrogenic features. Very good agreement with the experiment is observed.
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Submitted 29 April, 2023;
originally announced May 2023.
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Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe$_2$/CrCl$_3$ heterostructure
Authors:
Łucja Kipczak,
Zhaolong Chen,
Pengru Huang,
Kristina Vaklinova,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Maciej R. Molas
Abstract:
Quantum phenomena at interfaces create functionalities at the level of materials. Ferromagnetism in van der Waals systems with diverse arrangements of spins opened a pathway for utilizing proximity magnetic fields to activate properties of materials which would otherwise require external stimuli. Herewith, we realize this notion via creating heterostructures comprising bulk CrCl$_3$ ferromagnet wi…
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Quantum phenomena at interfaces create functionalities at the level of materials. Ferromagnetism in van der Waals systems with diverse arrangements of spins opened a pathway for utilizing proximity magnetic fields to activate properties of materials which would otherwise require external stimuli. Herewith, we realize this notion via creating heterostructures comprising bulk CrCl$_3$ ferromagnet with in-plane easy-axis magnetization and monolayer WSe$_2$ semiconductor. We demonstrate that the in-plane component of the proximity field activates the dark excitons within WSe$_2$. Zero-external-field emission from the dark states allowed us to establish the in-plane and out-of-plane components of the proximity field via inspection of the emission intensity and Zeeman effect, yielding canted orientations at the degree range of $10^{\circ}$ $-$ $30^{\circ}$ at different locations of the heterostructures, attributed to the features of interfacial topography. Our findings are relevant for the development of spintronics and valleytronics with long-lived dark states in technological timescales and sensing applications of local magnetic fields realized simultaneously in multiple dimensions.
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Submitted 24 April, 2023;
originally announced April 2023.
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Carbon and vacancy centers in hexagonal boron nitride
Authors:
P. Huang,
M. Grzeszczyk,
K. Vaklinova,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
M. Koperski
Abstract:
Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of formation of defects in hexagonal boron nitride based on vacancies and substitutional atoms. Through in-depth analysis of the defect-induced band structure and for…
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Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of formation of defects in hexagonal boron nitride based on vacancies and substitutional atoms. Through in-depth analysis of the defect-induced band structure and formation energy in varying growth conditions, we uncovered a dominant role of interdefect electron paring in stabilization of defect complexes. The electron reorganization modifies the exchange component of the electronic interactions which dominates over direct Coulomb repulsion or structural relaxation effects making the combination of acceptor- and donor-type defect centers energetically favorable. Based on an analysis of a large number of defect complexes we develop a simple picture of the inheritance of electronic properties when individual defects are combined together to form more complex centers.
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Submitted 29 December, 2021;
originally announced December 2021.
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ZnPSe$_3$ as ultrabright indirect bandgap system with microsecond excitonic lifetimes
Authors:
M. Grzeszczyk,
K. S. Novoselov,
M. Koperski
Abstract:
We report an optical characterization of ZnPSe$_3$ crystals that demonstrates indirect band gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from excitonic states with microsecond lifetimes. Through optical characterization, we reconstructed the electronic band scheme relevant for fundamental processes of light absorption, car…
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We report an optical characterization of ZnPSe$_3$ crystals that demonstrates indirect band gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from excitonic states with microsecond lifetimes. Through optical characterization, we reconstructed the electronic band scheme relevant for fundamental processes of light absorption, carrier relaxation and radiative recombination. The investigation of the radiative processes in the presence of magnetic field revealed spin polarization of fundamental electronic states. This observation opens a pathway towards controlling the spin of excitonic states in technologically relevant microsecond timescales.
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Submitted 14 November, 2021;
originally announced November 2021.
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Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities
Authors:
Z. Qiu,
K. Vaklinova,
P. Huang,
M. Grzeszczyk,
H. Yang,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
J. Lu,
M. Koperski
Abstract:
Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative du…
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Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.
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Submitted 17 March, 2024; v1 submitted 14 October, 2021;
originally announced October 2021.
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Flow Plugin Network for conditional generation
Authors:
Patryk Wielopolski,
Michał Koperski,
Maciej Zięba
Abstract:
Generative models have gained many researchers' attention in the last years resulting in models such as StyleGAN for human face generation or PointFlow for the 3D point cloud generation. However, by default, we cannot control its sampling process, i.e., we cannot generate a sample with a specific set of attributes. The current approach is model retraining with additional inputs and different archi…
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Generative models have gained many researchers' attention in the last years resulting in models such as StyleGAN for human face generation or PointFlow for the 3D point cloud generation. However, by default, we cannot control its sampling process, i.e., we cannot generate a sample with a specific set of attributes. The current approach is model retraining with additional inputs and different architecture, which requires time and computational resources. We propose a novel approach that enables to a generation of objects with a given set of attributes without retraining the base model. For this purpose, we utilize the normalizing flow models - Conditional Masked Autoregressive Flow and Conditional Real NVP, as a Flow Plugin Network (FPN).
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Submitted 7 October, 2021;
originally announced October 2021.
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Ultra-thin van der Waals crystals as semiconductor quantum wells
Authors:
Johanna Zultak,
Samuel Magorrian,
Maciej Koperski,
Alistair Garner,
Matthew J Hamer,
Endre Tovari,
Kostya S Novoselov,
Alexander Zhukov,
Yichao Zou,
Neil R. Wilson,
Sarah J Haigh,
Andrey Kretinin,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials.…
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Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.
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Submitted 31 October, 2019; v1 submitted 9 October, 2019;
originally announced October 2019.
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Magnetic 2D materials and heterostructures
Authors:
M. Gibertini,
M. Koperski,
A. F. Morpurgo,
K. S. Novoselov
Abstract:
The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years w…
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The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years with the introduction of a variety of atomically-thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus, in particular, on the case of the two most studied systems - semiconducting CrI$_3$ and metallic Fe$_3$GeTe$_2$ - and illustrate the physical phenomena that have been observed. Special attention will be given to the range of novel van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.
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Submitted 8 October, 2019;
originally announced October 2019.
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Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
Authors:
Evgeny M. Alexeev,
David A. Ruiz-Tijerina,
Mark Danovich,
Matthew J. Hamer,
Daniel J. Terry,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Maciej R. Molas,
Maciej Koperski,
Kenji Watanabe,
Takashi Taniguchi,
Kostya S. Novoselov,
Roman V. Gorbachev,
Hyeon Suk Shin,
Vladimir I. Fal'ko,
Alexander I. Tartakovskii
Abstract:
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu…
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Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.
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Submitted 12 April, 2019;
originally announced April 2019.
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Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
Authors:
Anastasia Tyurnina,
Denis Bandurin,
Ekaterina Khestanova,
Vasyl Kravets,
Maciej Koperski,
Francisco Guinea,
Alexander Grigorenko,
Andre Geim,
Irina Grigorieva
Abstract:
The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, do** and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating 'artificial atoms' tha…
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The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, do** and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating 'artificial atoms' that can utilize the so-called exciton funneling effect and work, for example, as exciton condensers. Here we describe room-temperature PL emitters that naturally occur whenever monolayer TMDC is deposited on an atomically flat substrate. These are hydrocarbon-filled bubbles which provide predictable, localized PL from well-separated submicron areas. Their emission energy is determined by the built-in strain controlled only by the substrate material, such that both the maximum strain and the strain profile are universal for all bubbles on a given substrate, i.e., independent of the bubble size. We show that for bubbles formed by monolayer MoS2, PL can be tuned between 1.72 to 1.81 eV by choosing bulk PtSe2, WS2, MoS2 or graphite as a substrate and its intensity is strongly enhanced by the funneling effect. Strong substrate-dependent quenching of the PL in areas of good contact between MoS2 and the substrate ensures localization of the luminescence to bubbles only; by employing optical reflectivity measurements we identify the mechanisms responsible for the quenching. Given the variety of available monolayer TMDCs and atomically flat substrates and the ease of creating such bubbles, our findings open a venue for making and studying the discussed light-emitting 'artificial atoms' that could be used in applications.
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Submitted 28 January, 2019;
originally announced January 2019.
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Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Authors:
Matthew Hamer,
Johanna Zultak,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Daniel Terry,
Alexei Barinov,
Alistair Garner,
Jack Donoghue,
Aidan P. Rooney,
Viktor Kandyba,
Alessio Giampietri,
Abigail J. Graham,
Natalie C. Teutsch,
Xue Xia,
Maciej Koperski,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev,
Neil R. Wilson
Abstract:
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye…
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Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.
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Submitted 21 January, 2019;
originally announced January 2019.
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Plugin Networks for Inference under Partial Evidence
Authors:
Michal Koperski,
Tomasz Konopczynski,
Rafał Nowak,
Piotr Semberecki,
Tomasz Trzcinski
Abstract:
In this paper, we propose a novel method to incorporate partial evidence in the inference of deep convolutional neural networks. Contrary to the existing, top performing methods, which either iteratively modify the input of the network or exploit external label taxonomy to take the partial evidence into account, we add separate network modules ("Plugin Networks") to the intermediate layers of a pr…
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In this paper, we propose a novel method to incorporate partial evidence in the inference of deep convolutional neural networks. Contrary to the existing, top performing methods, which either iteratively modify the input of the network or exploit external label taxonomy to take the partial evidence into account, we add separate network modules ("Plugin Networks") to the intermediate layers of a pre-trained convolutional network. The goal of these modules is to incorporate additional signal, ie information about known labels, into the inference procedure and adjust the predicted output accordingly. Since the attached plugins have a simple structure, consisting of only fully connected layers, we drastically reduced the computational cost of training and inference. At the same time, the proposed architecture allows to propagate information about known labels directly to the intermediate layers to improve the final representation. Extensive evaluation of the proposed method confirms that our Plugin Networks outperform the state-of-the-art in a variety of tasks, including scene categorization, multi-label image annotation, and semantic segmentation.
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Submitted 5 March, 2020; v1 submitted 2 January, 2019;
originally announced January 2019.
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Zeeman spectroscopy of excitons and hybridization of electronic states in few-layer WSe$_2$, MoSe$_2$ and MoTe$_2$
Authors:
Ashish Arora,
Maciej Koperski,
Artur Slobodeniuk,
Karol Nogajewski,
Robert Schmidt,
Robert Schneider,
Maciej R. Molas,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Marek Potemski
Abstract:
Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate the energetic degeneracy of the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys in few-layer TMDCs. We perform high-field magneto-reflectance spectroscopy on WSe$_2$, M…
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Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate the energetic degeneracy of the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys in few-layer TMDCs. We perform high-field magneto-reflectance spectroscopy on WSe$_2$, MoSe$_2$, and MoTe$_2$ crystals of thickness from monolayer to the bulk limit under magnetic fields up to 30 T applied perpendicular to the sample plane. Because of a strong spin-layer locking, the ground state A excitons exhibit a monolayer-like valley Zeeman splitting with a negative $g$-factor, whose magnitude increases monotonically when thinning the crystal down from bulk to a monolayer. Using the $\mathbf{k\cdot p}$ calculation, we demonstrate that the observed evolution of $g$-factors for different materials is well accounted for by hybridization of electronic states in the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys. The mixing of the valence and conduction band states induced by the interlayer interaction decreases the $g$-factor magnitude with an increasing layer number. The effect is the largest for MoTe$_2$, followed by MoSe$_2$, and smallest for WSe$_2$.
Keywords: MoSe$_2$, WSe$_2$, MoTe$_2$, valley Zeeman splitting, transition metal dichalcogenides, excitons, magneto optics.
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Submitted 19 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
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Fine structure of $\mathrm{K}$-excitons in multilayers of transition metal dichalcogenides
Authors:
A. O. Slobodeniuk,
Ł. Bala,
M. Koperski,
M. R. Molas,
P. Kossacki,
K. Nogajewski,
M. Bartos,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
M. Potemski
Abstract:
Reflectance and magneto-reflectance experiments together with theoretical modelling based on the $\mathbf{k\cdot p}$ approach have been employed to study the evolution of direct bandgap excitons in MoS$_2$ layers with a thickness ranging from mono- to trilayer. The extra excitonic resonances observed in MoS$_2$ multilayers emerge as a result of the hybridization of Bloch states of each sub-layer d…
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Reflectance and magneto-reflectance experiments together with theoretical modelling based on the $\mathbf{k\cdot p}$ approach have been employed to study the evolution of direct bandgap excitons in MoS$_2$ layers with a thickness ranging from mono- to trilayer. The extra excitonic resonances observed in MoS$_2$ multilayers emerge as a result of the hybridization of Bloch states of each sub-layer due to the interlayer coupling. The properties of such excitons in bi- and trilayers are classified by the symmetry of corresponding crystals. The inter- and intralayer character of the reported excitonic resonances is fingerprinted with the magneto-optical measurements: the excitonic $g$-factors of opposite sign and of different amplitude are revealed for these two types of resonances. The parameters describing the strength of the spin-orbit interaction are estimated for bi- and trilayer MoS$_2$.
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Submitted 1 October, 2018;
originally announced October 2018.
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Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe$_2$, WSe$_2$ and WS$_2$ monolayers
Authors:
M. Koperski,
M. R. Molas,
A. Arora,
K. Nogajewski,
M. Bartos,
J. Wyzula,
D. Vaclavkova,
P. Kossacki,
M. Potemski
Abstract:
We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple semi-phenomenological description of the magnetic field evolution of individual electronic states in fundamental sub-bands by considering three additive components: valle…
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We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple semi-phenomenological description of the magnetic field evolution of individual electronic states in fundamental sub-bands by considering three additive components: valley, spin and orbital terms. We corroborate the validity of the proposed description by inspecting the Zeeman-like splitting of neutral and charged excitonic resonances in absorption-type spectra. The values of all three terms are estimated based on the experimental data, demonstrating the significance of the valley term for a consistent description of magnetic field evolution of optical resonances, particularly those corresponding to charged states. The established model is further exploited for discussion of magneto-luminescence data. We propose an interpretation of the observed large g-factor values of low energy emission lines, due to so-called bound/localized excitons in tungsten based compounds, based on the brightening mechanisms of dark excitonic states.
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Submitted 1 March, 2018;
originally announced March 2018.
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Deep-Temporal LSTM for Daily Living Action Recognition
Authors:
Srijan Das,
Michal Koperski,
Francois Bremond,
Gianpiero Francesca
Abstract:
In this paper, we propose to improve the traditional use of RNNs by employing a many to many model for video classification. We analyze the importance of modeling spatial layout and temporal encoding for daily living action recognition. Many RGB methods focus only on short term temporal information obtained from optical flow. Skeleton based methods on the other hand show that modeling long term sk…
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In this paper, we propose to improve the traditional use of RNNs by employing a many to many model for video classification. We analyze the importance of modeling spatial layout and temporal encoding for daily living action recognition. Many RGB methods focus only on short term temporal information obtained from optical flow. Skeleton based methods on the other hand show that modeling long term skeleton evolution improves action recognition accuracy. In this work, we propose a deep-temporal LSTM architecture which extends standard LSTM and allows better encoding of temporal information. In addition, we propose to fuse 3D skeleton geometry with deep static appearance. We validate our approach on public available CAD60, MSRDailyActivity3D and NTU-RGB+D, achieving competitive performance as compared to the state-of-the art.
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Submitted 15 June, 2018; v1 submitted 1 February, 2018;
originally announced February 2018.
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Single Photon Emitters in Boron Nitride: More Than a Supplementary Material
Authors:
Maciej Koperski,
Karol Nogajewski,
Marek Potemski
Abstract:
We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow em…
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We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.
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Submitted 11 August, 2017;
originally announced August 2017.
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Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
Authors:
M. Koperski,
M. R. Molas,
A. Arora,
K. Nogajewski,
A. O. Slobodeniuk,
C. Faugeras,
M. Potemski
Abstract:
Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical tran…
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Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pum** experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.
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Submitted 18 December, 2016;
originally announced December 2016.
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Direct determination of zero-field splitting for single Co$^{2+}$ ion embedded in a CdTe/ZnTe quantum dot
Authors:
J. Kobak,
A. Bogucki,
T. Smoleński,
M. Papaj,
M. Koperski,
M. Potemski,
P. Kossacki,
A. Golnik,
W. Pacuski
Abstract:
When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is…
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When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of individual Co$^{2+}$ ion in epitaxial CdTe quantum dot in ZnTe barrier. Using partially allowed optical transitions we measure strain induced zero-field splitting of Co$^{2+}$ ion directly on excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of $S_z = + 3/2$ and $S_z = - 1/2$ Co$^{2+}$ spin states in magnetic field, we determine axial and in-plane components of crystal field acting on Co$^{2+}$. Proposed technique can be applied for optical determination of zero-field splitting of other transition metal ions in quantum dots.
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Submitted 18 October, 2016;
originally announced October 2016.
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Magnetic-field-induced abrupt spin state transition in a quantum dot containing magnetic ions
Authors:
Maciej Koperski,
Tomasz Smoleński,
Mateusz Goryca,
Piotr Wojnar,
Marek Potemski,
Piotr Kossacki
Abstract:
We present the results of a comprehensive magneto-optical characterization of single CdTe quantum dots containing a few Mn2+ ions. We find that some quantum dots exhibit an unexpected evolution of excitonic photoluminescence spectrum with the magnetic field. At a certain value of the magnetic field, specific for every quantum dot, each of the broad spectral lines related to the recombination of va…
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We present the results of a comprehensive magneto-optical characterization of single CdTe quantum dots containing a few Mn2+ ions. We find that some quantum dots exhibit an unexpected evolution of excitonic photoluminescence spectrum with the magnetic field. At a certain value of the magnetic field, specific for every quantum dot, each of the broad spectral lines related to the recombination of various excitonic complexes confined inside the dot transforms into a pair of narrow lines split by several meV. We interpret this abrupt change in the character of excitonic emission spectrum as a consequence of a transition from a non-polarized state of the Mn2+ spins in a low field regime to a highly (almost fully) polarized state above the critical magnetic field. Various optical experiments, including polarization-resolved studies, investigation of different excitation regimes and time-resolved measurements corroborate this scenario. However, these measurements indicate also that the observed effect is not related or influenced by the photo-created charge carriers, but it is rather originating from unusual spin configuration in the cluster of Mn2+ ions.
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Submitted 22 August, 2016;
originally announced August 2016.
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Radiatively limited dephasing and exciton dynamics in MoSe$_2$ monolayers
Authors:
Tomasz Jakubczyk,
Valentin Delmonte,
Maciej Koperski,
Karol Nogajewski,
Clément Faugeras,
Wolfgang Langbein,
Marek Potemski,
Jacek Kasprzak
Abstract:
By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a sub-picosecond (ps) range, approaching T$_2$=2T$_1$, and thus indicating radiatively limited dephasing at a temperature of 6$\,$K. We elucidate the dephasing mechanisms by…
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By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a sub-picosecond (ps) range, approaching T$_2$=2T$_1$, and thus indicating radiatively limited dephasing at a temperature of 6$\,$K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At a nanosecond range, we observe the residual FWM produced by the incoherent excitons, which initially disperse towards the dark states, but then relax back to the optically active states within the light cone. By introducing polarization-resolved excitation, we infer inter-valley exciton dynamics, showing an initial polarization degree of around 30$\,\%$, constant during the initial sub-picosecond decay, followed by the depolarization on a picosecond timescale. The FWM hyperspectral imaging reveals the doped and undoped areas of the sample, allowing to investigate the neutral exciton, the charged one or both transitions at the same time. In the latter case, we observe the exciton-trion beating in the coherence evolution indicating their coherent coupling.
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Submitted 24 June, 2016;
originally announced June 2016.
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Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field
Authors:
T. Smoleński,
M. Goryca,
M. Koperski,
C. Faugeras,
T. Kazimierczuk,
K. Nogajewski,
P. Kossacki,
M. Potemski
Abstract:
In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some…
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In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here we show that inter-valley scattering of excitons can be significantly suppressed in a $\mathrm{WSe}_2$ monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such system can be suppressed even further by the application of a tiny magnetic field of $\sim$100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay ($>1$ ns), once the dark excitons form more complex objects allowing for their radiative recombination. Our finding of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.
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Submitted 2 December, 2015;
originally announced December 2015.
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Exciton band structure in layered MoSe2: from a monolayer to the bulk limit
Authors:
Ashish Arora,
Karol Nogajewski,
Maciej R. Molas,
Maciej Koperski,
Marek Potemski
Abstract:
We present the micro-photoluminescence ($μ$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenin…
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We present the micro-photoluminescence ($μ$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe2 is tentatively attributed to the appearance of Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe2 with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe2.
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Submitted 1 December, 2015; v1 submitted 21 September, 2015;
originally announced September 2015.
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Excitonic resonances in thin films of WSe2: From monolayer to bulk material
Authors:
Ashish Arora,
Maciej Koperski,
Karol Nogajewski,
Jacques Marcus,
Clement Faugeras,
Marek Potemski
Abstract:
We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strengt…
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We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strength of Coulomb interaction as well. The observed temperature-activated energy shift and broadening of the fundamental direct exciton are well accounted for by standard formalisms used for conventional semiconductors. A large increase of the photoluminescence yield with temperature is observed in WSe2 monolayer, indicating the existence of competing radiative channels. The observation of absorption-type resonances due to both neutral and charged excitons in WSe2 monolayer is reported and the effect of the transfer of oscillator strength from charged to neutral exciton upon increase of temperature is demonstrated.
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Submitted 5 March, 2015;
originally announced March 2015.
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Single photon emitters in exfoliated WSe2 structures
Authors:
M. Koperski,
K. Nogajewski,
A. Arora,
J. Marcus,
P. Kossacki,
M. Potemski
Abstract:
Crystal structure imperfections in solids often act as efficient carrier trap** centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materia…
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Crystal structure imperfections in solids often act as efficient carrier trap** centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materials. In the case of recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials, exfoliated on alien substrates. Here, we report on comprehensive optical microspectroscopy studies of thin layers of tungsten diselenide, WSe2, a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes, transferred onto Si/SiO2 substrates, we discover centers which, at low temperatures, give rise to sharp emission lines (0.1 meV linewidth). These narrow emission lines reveal the effect of photon antibunching, the unambiguous attribute of single photon emitters. The optical response of these emitters is inherently linked to two-dimensional properties of the WSe2 monolayer, as they both give rise to luminescence in the same energy range, have nearly identical excitation spectra and very similar, characteristically large Zeeman effects. With advances in the structural control of edge imperfections, thin films of WSe2 may provide added functionalities, relevant for the domain of quantum optoelectronics.
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Submitted 13 November, 2014; v1 submitted 11 November, 2014;
originally announced November 2014.
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Coherent precession of an individual 5/2 spin
Authors:
M. Goryca,
M. Koperski,
P. Wojnar,
T. Smoleński,
T. Kazimierczuk,
A. Golnik,
P. Kossacki
Abstract:
We present a direct observation of a coherent spin precession of an individual Mn$^{2+}$ ion, having both electronic and nuclear spins equal to 5/2, embedded in a CdTe quantum dot and placed in magnetic field. The spin state evolution is probed in a time-resolved pump-probe measurement of absorption of the single dot. The experiment reveals subtle details of the large-spin coherent dynamics, such…
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We present a direct observation of a coherent spin precession of an individual Mn$^{2+}$ ion, having both electronic and nuclear spins equal to 5/2, embedded in a CdTe quantum dot and placed in magnetic field. The spin state evolution is probed in a time-resolved pump-probe measurement of absorption of the single dot. The experiment reveals subtle details of the large-spin coherent dynamics, such as non-sinusoidal evolution of states occupation, and beatings caused by the strain-induced differences in energy levels separation. Sensitivity of the large-spin impurity on the crystal strain opens the possibility of using it as a local strain probe.
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Submitted 10 August, 2014;
originally announced August 2014.
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Introducing single Mn2+ ions into spontaneously coupled quantum dot pairs
Authors:
M. Koperski,
M. Goryca,
T. Kazimierczuk,
T. Smoleński,
A. Golnik,
P. Wojnar,
P. Kossacki
Abstract:
We present the photoluminescence excitation study of the self-assembled CdTe/ZnTe quantum dots doped with manganese ions. We demonstrate the identification method of spontaneously coupled quantum dots pairs containing single Mn2+ ions. As the result of the coupling, the resonant absorption of the photon in one quantum dot is followed by the exciton transfer into a neighboring dot. It is shown that…
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We present the photoluminescence excitation study of the self-assembled CdTe/ZnTe quantum dots doped with manganese ions. We demonstrate the identification method of spontaneously coupled quantum dots pairs containing single Mn2+ ions. As the result of the coupling, the resonant absorption of the photon in one quantum dot is followed by the exciton transfer into a neighboring dot. It is shown that the Mn2+ ion might be present in the absorbing, emitting or both quantum dots. The magnetic properties of the Mn2+ spin are revealed by a characteristic sixfold splitting of the excitonic line. The statistics of the value of this splitting is analyzed for the large number of the dots and gives the information on the maximum density of the neutral exciton wave function.
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Submitted 12 October, 2013;
originally announced October 2013.
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Designing quantum dots for solotronics
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
M. Papaj,
K. Gietka,
A. Bogucki,
M. Koperski,
J. -G. Rousset,
J. Suffczyński,
E. Janik,
M. Nawrocki,
A. Golnik,
P. Kossacki,
W. Pacuski
Abstract:
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non…
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Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.
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Submitted 23 August, 2013;
originally announced August 2013.
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Picosecond charge variation of quantum dots under pulsed excitation
Authors:
Tomasz Kazimierczuk,
Mateusz Goryca,
Maciej Koperski,
Andrzej Golnik,
Jan Gaj,
Michał Nawrocki,
Piotr Wojnar,
Piotr Kossacki
Abstract:
We present a spectroscopic study of excitation dynamics in self assembled CdTe/ZnTe quantum dots. Insight into details of kinetics is obtained from the time resolved micro-photoluminescence, single photon correlation and subpicosecond excitation correlation measurements done on single quantum dots. It is shown that the pulsed excitation in energy above the energy gap of the barrier material resu…
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We present a spectroscopic study of excitation dynamics in self assembled CdTe/ZnTe quantum dots. Insight into details of kinetics is obtained from the time resolved micro-photoluminescence, single photon correlation and subpicosecond excitation correlation measurements done on single quantum dots. It is shown that the pulsed excitation in energy above the energy gap of the barrier material results in separate capture of electrons and holes. The capture of carriers of different charge take place at different delay from excitation.
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Submitted 17 November, 2009;
originally announced November 2009.
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A Mass Dependent String-Quintessence Model at the Planck Scale
Authors:
A. P. Koperski,
M. T. Koperski
Abstract:
This paper was withdrawn by arXiv admin due to authors' misrepresentation of identity/affiliation.
This paper was withdrawn by arXiv admin due to authors' misrepresentation of identity/affiliation.
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Submitted 1 April, 2005; v1 submitted 31 January, 2005;
originally announced February 2005.
