Showing 1–18 of 18 results for author: Kopas, C

Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing

Authors: Xiqiao Wang, Joel Howard, Eyob A. Sete, Greg Stiehl, Cameron Kopas, Stefano Poletto, Xian Wu, Mark Field, Nicholas Sharac, Christopher Eckberg, Hilal Cansizoglu, Raja Katta, Josh Mutus, Andrew Bestwick, Kameshwar Yadavalli, David P. Pappas

Abstract: Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini… ▽ More Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Transport signatures of phase fluctuations in superconducting qubits

Authors: Maxwell Wisne, Yanpei Deng, Hilal Cansizoglu, Cameron Kopas, Josh Mutus, Venkat Chandrasekhar

Abstract: Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junc… ▽ More Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current-voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Authors: Carlos G. Torres-Castanedo, Dominic P. Goronzy, Thang Pham, Anthony McFadden, Nicholas Materise, Paul Masih Das, Matthew Cheng, Dmitry Lebedev, Stephanie M. Ribet, Mitchell J. Walker, David A. Garcia-Wetten, Cameron J. Kopas, Jayss Marshall, Ella Lachman, Nikolay Zhelev, James A. Sauls, Joshua Y. Mutus, Corey Rae H. McRae, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam

Abstract: Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti… ▽ More Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

Authors: David P. Pappas, Mark Field, Cameron Kopas, Joel A. Howard, Xiqiao Wang, Ella Lachman, Lin Zhou, **su Oh, Kameshwar Yadavalli, Eyob A. Sete, Andrew Bestwick, Matthew J. Kramer, Joshua Y. Mutus

Abstract: We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl… ▽ More We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics. △ Less

Submitted 26 February, 2024; v1 submitted 14 January, 2024; originally announced January 2024.

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

Authors: Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, David van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yulia Krasnikova, Cameron J. Kopas, Ella O. Lachman, Duncan Miller, Josh Y. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar Yadavalli, **-Su Oh , et al. (15 additional authors not shown)

Abstract: We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati… ▽ More We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes. △ Less

Submitted 24 January, 2024; v1 submitted 25 April, 2023; originally announced April 2023.

Journal ref: npj Quantum Inf 10, 43 (2024)

Disentangling the sources of ionizing radiation in superconducting qubits

Authors: L. Cardani, I. Colantoni, A. Cruciani, F. De Dominicis, G. D'Imperio, M. Laubenstein, A. Mariani, L. Pagnanini, S. Pirro, C. Tomei, N. Casali, F. Ferroni, D. Frolov, L. Gironi, A. Grassellino, M. Junker, C. Kopas, E. Lachman, C. R. H. McRae, J. Mutus, M. Nastasi, D. P. Pappas, R. Pilipenko, M. Sisti, V. Pettinacci , et al. (5 additional authors not shown)

Abstract: Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly an… ▽ More Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly and operation of state-of-the-art superconducting qubits. We develop a GEANT-4 based simulation to predict the rate of impacts and the amount of energy released in a qubit chip from each of the mentioned sources. We finally propose mitigation strategies for the operation of next-generation qubits in a radio-pure environment. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Anisotropic superconductivity of niobium based on its response to non-magnetic disorder

Authors: Makariy A. Tanatar, Daniele Torsello, Kamal R. Joshi, Sunil Ghimire, Cameron J. Kopas, Jayss Marshall, Josh Y. Mutus, Gianluca Ghigo, Mehdi Zarea, James A. Sauls, Ruslan Prozorov

Abstract: Niobium is one of the most studied superconductors, both theoretically and experimentally. It is tremendously important for applications, and it has the highest superconducting transition temperature, $T_{c}=9.33$ K, of all pure metals. In addition to power applications in alloys, pure niobium is used for sensitive magneto-sensing, radio-frequency cavities, and, more recently, as circuit metalliza… ▽ More Niobium is one of the most studied superconductors, both theoretically and experimentally. It is tremendously important for applications, and it has the highest superconducting transition temperature, $T_{c}=9.33$ K, of all pure metals. In addition to power applications in alloys, pure niobium is used for sensitive magneto-sensing, radio-frequency cavities, and, more recently, as circuit metallization layers in superconducting qubits. A detailed understanding of its electronic and superconducting structure, especially its normal and superconducting state anisotropies, is crucial for mitigating the loss of quantum coherence in such devices. Recently, a microscopic theory of the anisotropic properties of niobium with the disorder was put forward. To verify theoretical predictions, we studied the effect of disorder produced by 3.5 MeV proton irradiation of thin Nb films grown by the same team and using the same protocols as those used in transmon qubits. By measuring the superconducting transition temperature and upper critical fields, we show a clear suppression of $T_{c}$ by potential (non-magnetic) scattering, which is directly related to the anisotropic order parameter. We obtain a very close quantitative agreement between the theory and the experiment. △ Less

Submitted 9 October, 2022; v1 submitted 28 July, 2022; originally announced July 2022.

Journal ref: Phys. Rev. B 106, 224511 (2022)

Characterization of Nb films for superconducting qubits using phase boundary measurements

Authors: Kevin M. Ryan, Carlos G. Torres-Castanedo, Dominic P. Goronzy, David A. Garcia Wetter, Matthew J Reagor, Mark Field, Cameron J Kopas, Jayss Marshall, Michael J. Bedzyk, Mark C. Hersam, Venkat Chandrasekhar

Abstract: Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits.… ▽ More Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature $T_c$ with an applied external magnetic field $H$ (of the phase boundary $T_c - H$) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary. △ Less

Submitted 8 August, 2022; v1 submitted 26 July, 2022; originally announced July 2022.

Contactless Excitation of Acoustic Resonance in Insulating Wafers

Authors: Gan Zhai, Yizhou Xin, Cameron J. Kopas, Ella Lachman, Mark Field, Josh Y. Mutus, Katarina Cicak, Jose Aumentado, Zuhawn Sung, William P. Halperin

Abstract: Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillati… ▽ More Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results. △ Less

Submitted 21 September, 2022; v1 submitted 25 July, 2022; originally announced July 2022.

Comments: 4 pages, 5 figures

Quasiparticle spectroscopy, transport, and magnetic properties of Nb films used in superconducting transmon qubits

Authors: Kamal R. Joshi, Sunil Ghimire, Makariy A. Tanatar, Amlan Datta, **-Su Oh, Lin Zhou, Cameron J. Kopas, Jayss Marshall, Josh Y. Mutus, Julie Slaughter, Matthew J. Kramer, James A. Sauls, Ruslan Prozorov

Abstract: Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circui… ▽ More Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circuits such as those used in quantum computers. The films show outstanding superconducting transition temperature of $T_{c}=9.35$ K and a fairly clean superconducting gap, along with superfluid density enhanced at intermediate temperatures. These observations are consistent with the recent theory of anisotropic strong-coupling superconductivity in Nb. However, the response to the magnetic field is complicated, exhibiting significantly irreversible behavior and insufficient heat conductance leading to thermo-magnetic instabilities. These may present an issue for further improvement of transmon quantum coherence. Possible mitigation strategies are discussed. △ Less

Submitted 23 July, 2022; originally announced July 2022.

Journal ref: Phys. Rev. Applied 20, 024031 (2023)

Visualizing heterogeneous dipole fields by terahertz light coupling in individual nano-junctions used in transmon qubits

Authors: R. H. J. Kim, J. M. Park, S. Haeuser, C. Huang, D. Cheng, T. Koschny, J. Oh, C. Kopas, H. Cansizoglu, K. Yadavalli, J. Mutus, L. Zhou, L. Luo, M. Kramer, J. Wang

Abstract: The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnet… ▽ More The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnetic wave coupling at individual nano-junctions and correlate them with structural imperfections from interface and boundary, ubiquitous in Josephson junctions (JJ) used in transmon qubits. A major obstacle lies in the fact that conventional microscopy tools are incapable of measuring simultaneous at nanometer and terahertz, "nano-THz" scales, which often associate with frequency-dependent charge scattering in nano-junctions. Here we directly visualize interface nano-dipole near-field distribution of individual Al/AlO$_{x}$/Al junctions used in transmon qubits. Our THz nanoscope images show a remarkable asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as "hot" vs "cold" cusp spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in JJ fabrication inside qubit devices. The asymmetric nano-dipole electric field contrast also correlates with distinguishing, "overshoot" frequency dependence that characterizes the charge scattering and dissipation at nanoscale, hidden in responses from topographic, structural imaging and spatially-averaged techniques. The real space map** of junction dipole fields and THz charge scattering can be extended to guide qubit nano-fabrication for ultimately optimizing qubit coherence times. △ Less

Submitted 13 July, 2022; originally announced July 2022.

Journal ref: Commun Phys 6, 147 (2023)

Simple coplanar waveguide resonator mask targeting metal-substrate interface

Authors: Cameron J. Kopas, Ella Lachman, Corey Rae H. McRae, Yuvraj Mohan, Josh Y. Mutus, Ani Nersisyan, Amrit Poudel

Abstract: This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of t… ▽ More This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of the on-chip devices, as well as to confirm lack of crosstalk between neighboring devices and demonstrate coupling tunability over three orders of magnitude. This mask is intended as an open-source community resource for facilitating precise and accurate comparisons of materials in the single-photon, millikelvin regime. △ Less

Submitted 14 April, 2022; originally announced April 2022.

Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit

Authors: **-Su Oh, Xiaotian Fang, Tae-Hoon Kim, Matt Lynn, Matt Kramer, Mehdi Zarea, James A. Sauls, A. Romanenko, S. Posen, A. Grassellino, Cameron J. Kopas, Mark Field, Jayss Marshall, Hilal Cansizoglu, Joshua Y. Mutus, Matthew Reagor, Lin Zhou

Abstract: Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive stud… ▽ More Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating. △ Less

Submitted 12 April, 2022; originally announced April 2022.

Develo** a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit

Authors: Akshay A. Murthy, Paul Masih Das, Stephanie M. Ribet, Cameron Kopas, Jaeyel Lee, Matthew J. Reagor, Lin Zhou, Matthew J. Kramer, Mark C. Hersam, Mattia Checchin, Anna Grassellino, Roberto dos Reis, Vinayak P. Dravid, Alexander Romanenko

Abstract: Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a… ▽ More Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO$_2$ found closer to the niobium film and Nb$_2$O$_5$ found closer to the surface. In terms of structural analysis, we find that the Nb$_2$O$_5$ region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1-2 nm corresponding to monoclinic N-Nb$_2$O$_5$ that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb$_2$O$_5$ region with nanometer spatial resolution. Through this correlative method, we observe that amorphous regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems. △ Less

Submitted 28 July, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Comments: 13 pages, 4 figures

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Authors: Akshay A. Murthy, Jae-Yel Lee, Cameron Kopas, Matthew J. Reagor, Anthony P. McFadden, David P. Pappas, Mattia Checchin, Anna Grassellino, Alexander Romanenko

Abstract: Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deploye… ▽ More Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Comments: 7 pages, 4 figures

Ge thin-films with tantalum diffusion-barriers for use in Nb-based superconductor technology

Authors: C. Kopas, S. Zhang, J. Gonzales, D. R. Queen, B. Wagner, R. W. Carpenter, N. Newman

Abstract: Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In Ge/Nb structures deposited at 400 °C, we observe intermixing over as much as 20 nm. The addition of a 10 nm Ta diffusion barrier layer reduces the superconduct… ▽ More Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In Ge/Nb structures deposited at 400 °C, we observe intermixing over as much as 20 nm. The addition of a 10 nm Ta diffusion barrier layer reduces the superconductor/dielectric intermixing to less than 5 nm and enhances the structural properties of deposited a-Ge layers based on Raman spectroscopy. Additionally, superconducting microwave resonators fabricated at room-temperature on crystalline Ge substrates with a Ta barrier layer show marked improvement in total and power-dependent two-level system microwave losses. △ Less

Submitted 26 April, 2021; originally announced April 2021.

Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures

Authors: Cameron J. Kopas, Justin Gonzales, Shengke Zhang, Daniel R. Queen, Brian Wagner, Mac Robinson, James Huffman, Nate Newman

Abstract: Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Jos… ▽ More Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $μ\textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1 μ\textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 μ\textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Interface contamination limits the loss in these devices. △ Less

Submitted 6 April, 2021; v1 submitted 19 November, 2020; originally announced November 2020.

Characterization of the Chemical and Electrical Properties of Defects at the Niobium-Silicon Interface

Authors: Cameron Kopas, Madhu Krishna Murthy, Christopher Gregory, Bryan Ibarra Mercado, Daniel R. Queen, Brian Wagner, Nathan Newman

Abstract: The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep level transient spectroscopy (DLTS), and secondary ion mass spectroscopy (SIMS). All samples have H, C, O, F, and Cl chemical contamination in the Si within 50 nm of the interface and electrically active defects with activat… ▽ More The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep level transient spectroscopy (DLTS), and secondary ion mass spectroscopy (SIMS). All samples have H, C, O, F, and Cl chemical contamination in the Si within 50 nm of the interface and electrically active defects with activation energies of 0.147, 0.247, 0.339, and 0.556 eV above the valence band maximum (E$_{vbm}$). In all cases, the deep level defect concentration is dominated by the hole trap at E$_{vbm}$ + 0.556eV, which we assign to a Nb point defect in Si, presumably Nb$_\textrm{Si}$. This defect is present with concentrations ranging from $7\times10^{13}$ to $5\times10^{14}$ cm$^{-3}$ and depends on the final surface clean process. The optimum surface treatment used in this study is an HF etch followed by an in-situ 100 eV Ar-gas ion milling process. Higher energy ion milling is found to increase the electrically active Nb defect concentration in the Si, and increase the concentration of defects. The HF etch alone removes O from the interface, but results in significant H and F contamination, electrically-active point defect concentrations, and levels of Shockley-Reed-Hall recombination (i.e. Nb/Si Schottky diodes with an ideality factor, n, of $\approx$ 1.6). The RCA clean increases the depth and concentration of H, F, C, and Nb contamination. △ Less

Submitted 16 November, 2020; originally announced November 2020.