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Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers
Authors:
D. V. Khomitsky,
A. A. Konakov,
E. A. Lavrukhina
Abstract:
A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot with variable number of bound states depending on barrier parameters. The spatial profile of exchange interaction between the edge sta…
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A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot with variable number of bound states depending on barrier parameters. The spatial profile of exchange interaction between the edge states and barriers is derived from the interaction with single impurity magnetic moment and is generalized for the barrier bulk structure formed by ensemble of impurities. The resulting Hamiltonian is studied as a function of barrier parameters including their strength and orientation of the magnetic moments. It is shown that for parallel magnetization of two barriers at least two discrete levels are formed regardless of the barrier strength. For antiparallel magnetization at least a single bound state is formed for any strength of the barriers. Our results may help in design of novel types of quantum dots based on topological insulators.
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Submitted 5 August, 2022; v1 submitted 11 June, 2022;
originally announced June 2022.
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High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
P. B. Demina,
D. A. Pavlov,
Yu. V. Usov,
V. E. Milin,
Yu. M. Kuznetsov,
R. N. Kriukov,
A. A. Konakov,
N. Yu. Tabachkova
Abstract:
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain…
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The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 C revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The X-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance was observed in the conductive layers up to room temperature. Magnetoresistance measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 C are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least room temperature in case of the conductive layer obtained at 200 C. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.
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Submitted 1 September, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
I. N. Antonov,
R. N. Kriukov,
S. Yu. Zubkov,
D. E. Nikolichev,
A. A. Konakov,
Yu. A. Dudin,
Yu. M. Kuznetsov,
N. A. Sobolev,
M. P. Temiryazeva
Abstract:
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depen…
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The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.
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Submitted 20 February, 2019; v1 submitted 9 February, 2019;
originally announced February 2019.
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The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
Authors:
A. V. Kudrin,
O. V. Vikhrova,
Yu. A. Danilov,
M. V. Dorokhin,
I. L. Kalentyeva,
A. A. Konakov,
V. K. Vasiliev,
D. A. Pavlov,
Yu. V. Usov,
B. N. Zvonkov
Abstract:
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with h…
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We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.
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Submitted 2 February, 2019; v1 submitted 20 April, 2018;
originally announced April 2018.
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Single-particle theory of persistent spin helices in two-dimensional electron gas: the general approach for quantum wells with different growth direction
Authors:
Alexander S. Kozulin,
Alexander I. Malyshev,
Anton A. Konakov
Abstract:
We present a detailed theoretical investigation of persistent spin helices in two-dimensional electron systems with spin-orbit coupling. For this purpose we consider a single-particle effective mass Hamiltonian with generalized linear-in-k spin-orbit coupling term corresponding to a quantum well grown in an arbitrary crystallographic direction, and derive the general condition for the formation of…
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We present a detailed theoretical investigation of persistent spin helices in two-dimensional electron systems with spin-orbit coupling. For this purpose we consider a single-particle effective mass Hamiltonian with generalized linear-in-k spin-orbit coupling term corresponding to a quantum well grown in an arbitrary crystallographic direction, and derive the general condition for the formation of the persistent spin helix. This condition applied for the Hamiltonians describing quantum wells with different growth directions indicates the possibility of existence of the persistent spin helix in a wide class of 2D systems apart from [001] model with equal Rashba and Dresselhaus spin-orbit coupling strengths and the [110] Dresselhaus model. In addition, we employ the translation operator formalism for analytical calculation of space-resolved spin density and visualization of the persistent spin helix patterns.
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Submitted 17 October, 2016;
originally announced October 2016.
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Regular and irregular dynamics of Dirac-Weyl wavepackets in a mesoscopic quantum dot at the edge of topological insulator
Authors:
D. V. Khomitsky,
A. A. Chubanov,
A. A. Konakov
Abstract:
The dynamics of Dirac-Weyl spin-polarized wavepackets driven by periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of two-dimensional HgTe/CdTe topological insulator with Dirac-Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It was observed that the interplay of strongly coupled sp…
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The dynamics of Dirac-Weyl spin-polarized wavepackets driven by periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of two-dimensional HgTe/CdTe topological insulator with Dirac-Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It was observed that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of irregular dynamics both in coordinate and spin channels. The border between the regular and irregular regimes determined by the strength and frequency of the driving field is found analytically within the quasiclassical approach by means of the Ince-Strutt diagram for Mathieu equation, and is supported by full quantum mechanical simulations of the driven dynamics. The investigation of quasienergy spectrum by Floquet approach reveals the presence of non-Poissonian level statistics which indicates the possibility of chaotic quantum dynamics and corresponds to the areas of parameters for irregular regimes within the quasiclassical approach. We found that the influence of weak disorder leads to partial suppression of the dynamical chaos. Our findings are of interest both for progress in a fundamental field of quantum chaotic dynamics and for further experimental and technological applications of spin-dependent phenomena in nanostructures based on topological insulators.
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Submitted 7 July, 2016; v1 submitted 7 August, 2014;
originally announced August 2014.
