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Photoemission angular distribution beyond the single wavevector description of photoelectron final states
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Yuto Fukushima,
Kaishu Kawaguchi,
Ayumi Harasawa,
Takushi Iimori,
Fumio Komori,
Masashi Arita,
Ryo Mori,
Kenta Kuroda,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We develop a simulation procedure for angle-resolved photoemission spectroscopy (ARPES), where a photoelectron wave function is set to be an outgoing plane wave in a vacuum associated with the emitted photoelectron wave packet. ARPES measurements on the transition metal dichalcogenide $1T$-$\mathrm{Ti}\mathrm{S}_2$ are performed, and our simulations exhibit good agreement with experiments. Analysi…
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We develop a simulation procedure for angle-resolved photoemission spectroscopy (ARPES), where a photoelectron wave function is set to be an outgoing plane wave in a vacuum associated with the emitted photoelectron wave packet. ARPES measurements on the transition metal dichalcogenide $1T$-$\mathrm{Ti}\mathrm{S}_2$ are performed, and our simulations exhibit good agreement with experiments. Analysis of our calculated final state wave functions quantitatively visualizes that they include various waves due to the boundary condition and the uneven crystal potential. These results show that a more detailed investigation of the photoelectron final states is necessary to fully explain the photon-energy- and light-polarization-dependent ARPES spectra.
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Submitted 22 June, 2024; v1 submitted 10 November, 2023;
originally announced November 2023.
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Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of $AB$-Stacked Crystals
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Masaru Kobayashi,
Yuto Fukushima,
Yosuke Arai,
Takushi Iimori,
Mikk Lippmaa,
Kohei Yamagami,
Yoshinori Kotani,
Fumio Komori,
Kenta Kuroda,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We…
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We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk one due to partially broken nonsymmorphic symmetries.
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Submitted 29 March, 2024; v1 submitted 2 August, 2023;
originally announced August 2023.
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Spin-polarized saddle points in the topological surface states of the elemental Bismuth revealed by a pump-probe spin-resolved ARPES
Authors:
Yuto Fukushima,
Kaishu Kawaguchi,
Kenta Kuroda,
Masayuki Ochi,
Hiroaki Tanaka,
Ayumi Harasawa,
Takushi Iimori,
Zhigang Zhao,
Shuntaro Tani,
Koichiro Yaji,
Shik Shin,
Fumio Komori,
Yohei Kobayashi,
Takeshi Kondo
Abstract:
We use a pump-probe, spin-, and angle-resolved photoemission spectroscopy (ARPES) with a 10.7 eV laser accessible up to the Brillouin zone edge, and reveal for the first time the entire band structure, including the unoccupied side, for the elemental bismuth (Bi) with the spin-polarized surface states. Our data identify Bi as in a strong topological insulator phase ($Z_2$=1) against the prediction…
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We use a pump-probe, spin-, and angle-resolved photoemission spectroscopy (ARPES) with a 10.7 eV laser accessible up to the Brillouin zone edge, and reveal for the first time the entire band structure, including the unoccupied side, for the elemental bismuth (Bi) with the spin-polarized surface states. Our data identify Bi as in a strong topological insulator phase ($Z_2$=1) against the prediction of most band calculations. We unveil that the unoccupied topological surface states possess spin-polarized saddle points yielding the van Hove singularity, providing an excellent platform for the future development of opto-spintronics.
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Submitted 31 March, 2023;
originally announced March 2023.
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Time-, spin-, and angle-resolved photoemission spectroscopy with a 1-MHz 10.7-eV pulse laser
Authors:
Kaishu Kawaguchi,
Kenta Kuroda,
Z. Zhao,
S. Tani,
A. Harasawa,
Y. Fukushima,
H. Tanaka,
R. Noguchi,
T. Iimori,
K. Yaji,
M. Fujisawa,
S. Shin,
F. Komori,
Y. Kobayashi,
Takeshi Kondo
Abstract:
We describe a setup of time-, spin-, and angle-resolved photoemission spectroscopy (tr-SARPES) employing a 10.7-eV ($λ$=115.6 nm) pulse laser at 1-MHz repetition rate as a probe photon source. This equipment effectively combines technologies of a high-power Yb:fiber laser, ultraviolet-driven harmonic generation in Xe gas, and a SARPES apparatus equipped with very-low-energy-electron-diffraction (V…
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We describe a setup of time-, spin-, and angle-resolved photoemission spectroscopy (tr-SARPES) employing a 10.7-eV ($λ$=115.6 nm) pulse laser at 1-MHz repetition rate as a probe photon source. This equipment effectively combines technologies of a high-power Yb:fiber laser, ultraviolet-driven harmonic generation in Xe gas, and a SARPES apparatus equipped with very-low-energy-electron-diffraction (VLEED) spin detectors. A high repetition rate (1 MHz) of the probe laser allows experiments with the photoemission space-charge effects significantly reduced, despite a high flux of 10$^{13}$ photons/s on the sample. The relatively high photon energy (10.7 eV) also brings the capability of observing a wide momentum range that covers the entire Brillouin zone of many materials while ensuring high momentum resolution. The experimental setup overcomes a low efficiency of spin-resolved measurements, which gets even more severe for the pump-probed unoccupied states, and affords for investigating ultrafast electron and spin dynamics of modern quantum materials with energy and time resolutions of 25 meV and 360 fs, respectively.
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Submitted 22 April, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Fluctuated spin-orbital texture of Rashba-split surface states in real and reciprocal space
Authors:
Takuto Nakamura,
Yoshiyuki Ohtsubo,
Ayumi Harasawa,
Koichiro Yaji,
Shik Shin,
Fumio Komori,
Shin-ichi Kimura
Abstract:
Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena, such as the source of the spin current and spin-mediated energy conversion. Here, we show the odd fluctuation in the spin-orbital texture in a surface Rashba syst…
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Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena, such as the source of the spin current and spin-mediated energy conversion. Here, we show the odd fluctuation in the spin-orbital texture in a surface Rashba system on Bi/InAs(110)-(2$\times$1) by spin- and angle-resolved photoelectron spectroscopy and a numerical simulation based on a density-functional theory (DFT) calculation. The surface state shows a paired parabolic dispersion with the spin degeneracy lifted by the Rashba effect. Although its spin polarization should be fixed in a particular direction based on the Rashba model, the observed spin polarization varies greatly and even reverses its sign depending on the wavenumber. DFT calculations also reveal that the spin directions of two inequivalent Bi chains on the surface change from nearly parallel (canted-parallel) to anti-parallel in real space in the corresponding wavevector region. These results point out an oversimplification of the nature of spin in Rashba and Dirac systems and provide more freedom than expected for spin manipulation of photoelectrons.
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Submitted 26 December, 2021;
originally announced December 2021.
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Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate
Authors:
Haruko Toyama,
Ryota Akiyama,
Satoru Ichinokura,
Mizuki Hashizume,
Takushi Iimori,
Yukihiro Endo,
Rei Hobara,
Tomohiro Matsui,
Kentaro Horii,
Shunsuke Sato,
Toru Hirahara,
Fumio Komori,
Shuji Hasegawa
Abstract:
Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graph…
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Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graphene by Ca-termination of SiC (monolayer graphene becomes bilayer) with inducing more carriers than a free-standing model. Then, Ca is intercalated in-between graphene layers, which shows superconductivity with the updated critical temperature ($T_{C}$) of up to 5.7 K. In addition, the relation between $T_{C}$ and the normal-state conductivity is unusual, "dome-shape". These findings are beyond the simple C6CaC6 model in which s-wave BCS superconductivity is theoretically predicted. This work proposes a general picture of the intercalation-induced superconductivity in graphene on SiC, and shed the light on the potential of superconductivity induced by other intercalants.
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Submitted 25 November, 2021;
originally announced November 2021.
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Structural and electrical characterization of the monolayer Kondo-lattice compound CePt$_6$/Pt(111)
Authors:
Koichiro Ienaga,
Sunghun Kim,
Toshio Miyamachi,
Fumio Komori
Abstract:
We report the growth process, structure, and electronic states of 1 unit layer (u.l.) of a Ce-Pt intermetallic compound on Pt(111) using scanning tunneling microscopy/spectroscopy (STM/STS) and low-energy electron diffraction. An ordered $(2 \times 2)$ structure was observed in the form of films or nanoislands depending on Ce dose by annealing at around 700 K. A structural model constructed from a…
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We report the growth process, structure, and electronic states of 1 unit layer (u.l.) of a Ce-Pt intermetallic compound on Pt(111) using scanning tunneling microscopy/spectroscopy (STM/STS) and low-energy electron diffraction. An ordered $(2 \times 2)$ structure was observed in the form of films or nanoislands depending on Ce dose by annealing at around 700 K. A structural model constructed from atomically resolved STM images and quasiparticle interference (QPI) patterns indicates the formation of a new surface compound 1 u.l. CePt$_6$ on Pt(111) terminated by a Pt layer. A lateral lattice constant of the 1 u.l. CePt$_6$ on Pt(111) is expanded from the value of a bulk CePt$_5$ crystal to match the Pt(111) substrate. By measuring d$I$/d$V$ spectra and QPI, we observed an onset energy of the surface state found on Pt(111) above Fermi energy ($E_F$) shifts below $E_F$ on the Pt layer of the 1 u.l. CePt$_6$ due to charge transfer from the underneath CePt$_2$ layer. We discuss a possible two-dimensional coherent Kondo effect with the observed spectra on the 1 u.l. CePt$_6$.
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Submitted 26 October, 2021;
originally announced October 2021.
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Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces
Authors:
Kohei Fukuma,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Satoru Tanaka
Abstract:
Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former one…
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Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former ones, whereas its partial periodic bonding with the SiC steps on the latter ones generates a pseudo-graphene nanoribbon (pseudo-GNR) array. The nanoribbons have a width of 2 nm and are aligned in the $[1\bar{2}10]$ direction with a spatial periodicity of 3.3 nm. Here, the Raman spectroscopy analysis of the pseudo-GNR array showed the absence of the 2D peak and the polarization dependence of the $G$ and $D$ peaks, which is typical of the armchair edge nanoribbon.
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Submitted 25 October, 2021;
originally announced October 2021.
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Visualization of optical polarization transfer to photoelectron spin vector emitted from the spin-orbit coupled surface state
Authors:
Kenta Kuroda,
Koichiro Yaji,
Ryo Noguchi,
Ayumi Harasawa,
Shik Shin,
Takeshi Kondo,
Fumio Komori
Abstract:
Similar to light polarization that is selected by a superposition of optical basis, electron spin direction can be controlled through a superposition of spin basis. We investigate such a spin interference occurring in photoemission of the spin-orbit coupled surface state in Bi2Se3 by using spin- and angle-resolved photoemission spectroscopy combined with laser light source (laser-SARPES). Our lase…
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Similar to light polarization that is selected by a superposition of optical basis, electron spin direction can be controlled through a superposition of spin basis. We investigate such a spin interference occurring in photoemission of the spin-orbit coupled surface state in Bi2Se3 by using spin- and angle-resolved photoemission spectroscopy combined with laser light source (laser-SARPES). Our laser-SARPES with three-dimensional spin detection and tunable laser polarization including elliptical and circular polarization enables us to directly visualize how the direction of the fully-polarized photoelectron spin changes according to the optical phase and orientation of the incident laser polarization. By this advantage of our laser-SARPES, we demonstrate that such optical information can be projected to the three-dimensional spin vector of the photoelectrons. Our results, therefore, present a novel spin-polarized electron source permitting us to optically control the pure spin state pointing to the arbitrary direction.
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Submitted 11 May, 2021; v1 submitted 6 May, 2021;
originally announced May 2021.
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Atomic-layer Rashba-type superconductor protected by dynamic spin-momentum locking
Authors:
Shunsuke Yoshizawa,
Takahiro Kobayashi,
Yoshitaka Nakata,
Koichiro Yaji,
Kenta Yokota,
Fumio Komori,
Shik Shin,
Kazuyuki Sakamoto,
Takashi Uchihashi
Abstract:
Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has experimentally been shown recently, that of Rashba-type SOC remains elusive. Here we report on convincing evidence for the critical role of the spin-m…
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Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has experimentally been shown recently, that of Rashba-type SOC remains elusive. Here we report on convincing evidence for the critical role of the spin-momentum locking on crystalline atomic-layer superconductors on surfaces, for which the presence of the Rashba-type SOC is demonstrated. In-situ electron transport measurements reveal that in-plane upper critical magnetic field is anomalously enhanced, reaching approximately three times the Pauli limit at $T = 0$. Our quantitative analysis clarifies that dynamic spin-momentum locking, a mechanism where spin is forced to flip at every elastic electron scattering, suppresses the Cooper pair-breaking parameter by orders of magnitude and thereby protects superconductivity. The present result provides a new insight into how superconductivity can survive the detrimental effects of strong magnetic fields and exchange interactions.
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Submitted 12 March, 2021;
originally announced March 2021.
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Scaling law for the Rashba-type spin splitting in quantum well films
Authors:
Ryo Noguchi,
Kenta Kuroda,
Mitsuaki Kawamura,
Koichiro Yaji,
Ayumi Harasawa,
Takushi Iimori,
Shik Shin,
Fumio Komori,
Taisuke Ozaki,
Takeshi Kondo
Abstract:
We use laser-based spin- and angle-resolved photoemission spectroscopy (laser-SARPES) with high-resolution, and experimentally determine, for the first time, the Rashba-parameters of quantum well states (QWSs) systematically changing with the film thickness and the quantum numbers, through the observation of the Ag films grown on an Au(111) substrate. The data are very well reproduced by the theor…
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We use laser-based spin- and angle-resolved photoemission spectroscopy (laser-SARPES) with high-resolution, and experimentally determine, for the first time, the Rashba-parameters of quantum well states (QWSs) systematically changing with the film thickness and the quantum numbers, through the observation of the Ag films grown on an Au(111) substrate. The data are very well reproduced by the theoretical calculations based on the density functional theory. Most importantly, we find a scaling law for the Rashba parameter ($α_{\rm R}$) that the magnitude of $α_{\rm R}$ is scaled by the charge density at the interface and the spin-orbit coupling ratio between the film and the substrate, and it is expressed by a single straight line regardless of the film thickness and the quantum numbers. The new finding not only is crucial to understand the Rashba effect in QWSs but also gives a foundation of film growth engineering to fine-tune the spin splitting in 2D heterostructure systems.
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Submitted 21 December, 2020;
originally announced December 2020.
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Twisted bilayer graphene fabricated by direct bonding in a high vacuum
Authors:
Hitoshi Imamura,
Anton Visikovskiy,
Ryosuke Uotani,
Takashi Kajiwara,
Hiroshi Ando,
Takushi Iimori,
Kota Iwata,
Toshio Miyamachi,
Kan Nakatsuji,
Kazuhiko Mase,
Tetsuroh Shirasawa,
Fumio Komori,
Satoru Tanaka
Abstract:
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to…
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Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
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Submitted 9 May, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)
Authors:
Takuto Nakamura,
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Patrick Le Fèvre,
François Bertran,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Shik Shin,
Fumio Komori,
Shin-ichi Kimura
Abstract:
We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the…
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We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the $\barΓ$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.
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Submitted 2 December, 2019; v1 submitted 29 September, 2019;
originally announced September 2019.
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Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene
Authors:
T. Suzuki,
T. Iimori,
S. J. Ahn,
Y. Zhao,
M. Watanabe,
J. Xu,
M. Fujisawa,
T. Kanai,
N. Ishii,
J. Itatani,
K. Suwa,
H. Fukidome,
S. Tanaka,
J. R. Ahn,
K. Okazaki,
S. Shin,
F. Komori,
I. Matsuda
Abstract:
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in t…
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Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient do** from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.
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Submitted 10 May, 2019;
originally announced May 2019.
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Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms
Authors:
S. Ito,
M. Arita,
J. Haruyama,
B. Feng,
W. -C. Chen,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
G. Bian,
S. -J. Tang,
T. -C. Chiang,
O. Sugino,
F. Komori,
I. Matsuda
Abstract:
The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we…
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The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.
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Submitted 30 January, 2020; v1 submitted 16 March, 2019;
originally announced March 2019.
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Computational study of heavy group IV elements (Ge, Sn, Pb) triangular lattice atomic layers on SiC(0001) surface
Authors:
Anton Visikovskiy,
Shingo Hayashi,
Takashi Kajiwara,
Fumio Komori,
Koichiro Yaji,
Satoru Tanaka
Abstract:
Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) calculations with/without SOC we investigate the variation of group IV heavy elements overlayers, namely dense triangular lattice atomic layers (TLAL) on the surface of SiC(0001) semiconductor. The possibility of such laye…
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Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) calculations with/without SOC we investigate the variation of group IV heavy elements overlayers, namely dense triangular lattice atomic layers (TLAL) on the surface of SiC(0001) semiconductor. The possibility of such layers formation and their properties have not been addressed before. Here we show, that these layers may indeed be stable and, owing to peculiar bonding configuration, exhibit robust Dirac-like energy bands originating from $p_x+p_y$ orbitals and localized mostly within the layer, and $p_z$ band localized outside the layer and interacting with SiC substrate. We found that a $T_1$ adsorption site is most favorable for such TLAL structure and this results in an unusual SOC-induced spin polarization of the states around $\bar{K}$ points of Brillouin zone, namely the coexistence of Rashba- and Zeeman-like spin polarization of different states. We explain this phenomena in terms of symmetry of partial electronic density rather than symmetry of atomic structure.
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Submitted 4 September, 2018;
originally announced September 2018.
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Rashba spin splitting of L-gap surface states on Ag(111) and Cu(111)
Authors:
Koichiro Yaji,
Ayumi Harasawa,
Kenta Kuroda,
Ronghan Li,
Binghai Yan,
Fumio Komori,
Shik Shin
Abstract:
Spin-resolved band structures of L-gap surface states on Ag(111) and Cu(111) are investigated by spin- and angle-resolved photoelectron spectroscopy (SARPES) with a vacuum-ultra-violet laser. The observed spin textures of the Ag(111) and Cu(111) surface states agree with that expected by the conventional Rashba effect. The Rashba parameter of the Ag(111) surface state is estimated quantitatively a…
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Spin-resolved band structures of L-gap surface states on Ag(111) and Cu(111) are investigated by spin- and angle-resolved photoelectron spectroscopy (SARPES) with a vacuum-ultra-violet laser. The observed spin textures of the Ag(111) and Cu(111) surface states agree with that expected by the conventional Rashba effect. The Rashba parameter of the Ag(111) surface state is estimated quantitatively and is 80% of that of Cu(111). The surface-state wave function is found to be predominantly of even mirror-symmetry with negligible odd contribution by SARPES using a linearly polarized light. The results are consistent with our theoretical calculations for the orbital-resolved surface state.
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Submitted 17 July, 2018;
originally announced July 2018.
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Dynamic interface formation in magnetic thin film heterostructures
Authors:
Shuhei Nakashima,
Toshio Miyamachi,
Yasutomi Tatetsu,
Yukio Takahashi,
Yasumasa Takagi,
Yoshihiro Gohda,
Toshihiko Yokoyama,
Fumio Komori
Abstract:
Magnetic thin film heterostructures have been widely studied for fundamental interests in the emergence of novel phenomena accompanied by the heterointerface formation as well as their promising practical potential. Combining x-ray magnetic circular dichroism with scanning tunneling microscopy, we show for Mn/Fe thin film heterostructures that the interfacial factors dominating electronic and magn…
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Magnetic thin film heterostructures have been widely studied for fundamental interests in the emergence of novel phenomena accompanied by the heterointerface formation as well as their promising practical potential. Combining x-ray magnetic circular dichroism with scanning tunneling microscopy, we show for Mn/Fe thin film heterostructures that the interfacial factors dominating electronic and magnetic properties of the entire system dynamically change with the amount of the Mn overlayer. Element specific magnetization curves of the Fe layer exhibit a two-step spin reorientation transition from out-of-plane to in-plane direction with increasing the Mn coverage. Atomic-scale characterizations of structural and electronic properties in combination with the first-principles calculations successfully unravel the roles of the entangled interfacial factors, and clarify the driving forces of the transition. The first step of the transition at a low Mn coverage is dominantly induced by the formation of FeMn disordered alloy at the heterointerface, and the electronic hybridization with interfacial FeMn ordered alloy is dominant as the origin of the second step of the transition at a high Mn coverage.
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Submitted 27 June, 2018;
originally announced June 2018.
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Giant Rashba splitting of quasi-1D surface states on Bi/InAs(110)-(2$\times$1)
Authors:
T. Nakamura,
Y. Ohtsubo,
Y. Yamashita,
S. Ideta,
K. Tanaka,
K. Yaji,
A. Harasawa,
S. Shin,
F. Komori,
R. Yukawa,
K. Horiba,
H. Kumigashira,
S. Kimura
Abstract:
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of…
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Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices.
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Submitted 4 August, 2018; v1 submitted 19 April, 2018;
originally announced April 2018.
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Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations
Authors:
S. Ito,
B. Feng,
M. Arita,
T. Someya,
W. -C. Chen,
A. Takayama,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
I. Matsuda
Abstract:
Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine…
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Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.
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Submitted 15 May, 2018; v1 submitted 30 November, 2017;
originally announced December 2017.
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Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface
Authors:
J. Kishi,
Y. Ohtsubo,
T. Nakamura,
K. Yaji,
A. Harasawa,
F. Komori,
S. Shin,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
A. Taleb-Ibrahimi,
M. Nurmamat,
H. Yamane,
S. Ideta,
K. Tanaka,
S. Kimura
Abstract:
One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of…
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One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.
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Submitted 16 October, 2017; v1 submitted 18 April, 2017;
originally announced April 2017.
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Thickness-dependent electronic and magnetic properties of $γ'$-Fe$_{\mathrm 4}$N atomic layers on Cu(001)
Authors:
Y. Takahashi,
T. Miyamachi,
S. Nakashima,
N. Kawamura,
Y. Takagi,
M. Uozumi,
V. Antonov,
T. Yokoyama,
A. Ernst,
F. Komori
Abstract:
Growth, electronic and magnetic properties of $γ'$-Fe$_{4}$N atomic layers on Cu(001) are studied by scanning tunneling microscopy/spectroscopy and x-ray absorption spectroscopy/magnetic circular dichroism. A continuous film of ordered trilayer $γ'$-Fe$_{4}$N is obtained by Fe deposition under N$_{2}$ atmosphere onto monolayer Fe$_{2}$N/Cu(001), while the repetition of a bombardment with 0.5 keV N…
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Growth, electronic and magnetic properties of $γ'$-Fe$_{4}$N atomic layers on Cu(001) are studied by scanning tunneling microscopy/spectroscopy and x-ray absorption spectroscopy/magnetic circular dichroism. A continuous film of ordered trilayer $γ'$-Fe$_{4}$N is obtained by Fe deposition under N$_{2}$ atmosphere onto monolayer Fe$_{2}$N/Cu(001), while the repetition of a bombardment with 0.5 keV N$^{+}$ ions during growth cycles results in imperfect bilayer $γ'$-Fe$_{4}$N. The increase in the sample thickness causes the change of the surface electronic structure, as well as the enhancement in the spin magnetic moment of Fe atoms reaching $\sim$ 1.4 $μ_{\mathrm B}$/atom in the trilayer sample. The observed thickness-dependent properties of the system are well interpreted by layer-resolved density of states calculated using first principles, which demonstrates the strongly layer-dependent electronic states within each surface, subsurface, and interfacial plane of the $γ'$-Fe$_{4}$N atomic layers on Cu(001).
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Submitted 6 February, 2017;
originally announced February 2017.
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Dirac fermions in borophene
Authors:
Baojie Feng,
Osamu Sugino,
Ro-Ya Liu,
** Zhang,
Ryu Yukawa,
Mitsuaki Kawamura,
Takushi Iimori,
Howon Kim,
Yukio Hasegawa,
Hui Li,
Lan Chen,
Kehui Wu,
Hiroshi Kumigashira,
Fumio Komori,
Tai-Chang Chiang,
Sheng Meng,
Iwao Matsuda
Abstract:
Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) su…
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Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.
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Submitted 2 February, 2017;
originally announced February 2017.
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Direct Map** of Spin and Orbital Entangled Wavefunction under Interband Spin-Orbit coupling of Rashba Spin-Split Surface States
Authors:
Ryo Noguchi,
Kenta Kuroda,
K. Yaji,
K. Kobayashi,
M. Sakano,
A. Harasawa,
Takeshi Kondo,
F. Komori,
S. Shin
Abstract:
We use spin- and angle-resolved photoemission spectroscopy (SARPES) combined with polarization-variable laser and investigate the spin-orbit coupling effect under interband hybridization of Rashba spin-split states for the surface alloys Bi/Ag(111) and Bi/Cu(111). In addition to the conventional band map** of photoemission for Rashba spin-splitting, the different orbital and spin parts of the su…
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We use spin- and angle-resolved photoemission spectroscopy (SARPES) combined with polarization-variable laser and investigate the spin-orbit coupling effect under interband hybridization of Rashba spin-split states for the surface alloys Bi/Ag(111) and Bi/Cu(111). In addition to the conventional band map** of photoemission for Rashba spin-splitting, the different orbital and spin parts of the surface wavefucntion are directly imaged into energy-momentum space. It is unambiguously revealed that the interband spin-orbit coupling modifies the spin and orbital character of the Rashba surface states leading to the enriched spin-orbital entanglement and the pronounced momentum dependence of the spin-polarization. The hybridization thus strongly deviates the spin and orbital characters from the standard Rashba model. The complex spin texture under interband spin-orbit hybridyzation proposed by first-principles calculation is experimentally unraveled by SARPES with a combination of p- and s-polarized light.
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Submitted 25 January, 2017;
originally announced January 2017.
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Coherent control over three-dimensional spin polarization for the spin-orbit coupled surface state of Bi$_2$Se$_3$
Authors:
Kenta Kuroda,
Koichiro Yaji,
M. Nakayama,
A. Harasawa,
Y. Ishida,
S. Watanabe,
C. -T. Chen,
T. Kondo,
F. Komori,
S. Shin
Abstract:
Interference of spin-up and spin-down eigenstates depicts spin rotation of electrons, which is a fundamental concept of quantum mechanics and accepts technological challenges for the electrical spin manipulation. Here, we visualize this coherent spin physics through laser spin- and angle-resolved photoemission spectroscopy on a spin-orbital entangled surface-state of a topological insulator. It is…
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Interference of spin-up and spin-down eigenstates depicts spin rotation of electrons, which is a fundamental concept of quantum mechanics and accepts technological challenges for the electrical spin manipulation. Here, we visualize this coherent spin physics through laser spin- and angle-resolved photoemission spectroscopy on a spin-orbital entangled surface-state of a topological insulator. It is unambiguously revealed that the linearly polarized laser can simultaneously excite spin-up and spin-down states and these quantum spin-basis are coherently superposed in photoelectron states. The superposition and the resulting spin rotation is arbitrary manipulated by the direction of the laser field. Moreover, the full observation of the spin rotation displays the phase of the quantum states. This presents a new facet of laser-photoemission technique for investigation of quantum spin physics opening new possibilities in the field of quantum spintronic applications.
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Submitted 7 August, 2016; v1 submitted 1 August, 2016;
originally announced August 2016.
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Spin Texture in Type-II Weyl Semimetal WTe2
Authors:
Baojie Feng,
Yang-Hao Chan,
Ya Feng,
Ro-Ya Liu,
Mei-Yin Chou,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Paolo Moras,
Alexei Barinov,
Walid G. Malaeb,
Cedric Bareille,
Takeshi Kondo,
Shik Shin,
Fumio Komori,
Tai-Chang Chiang,
Youguo Shi,
Iwao Matsuda
Abstract:
We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its ext…
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We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its extremely large and nonsaturating magnetoresistance.
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Submitted 20 November, 2016; v1 submitted 31 May, 2016;
originally announced June 2016.
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Epitaxially stabilized iron thin films via effective strain relief from steps
Authors:
T. Miyamachi,
S. Nakashima,
S. Kim,
N. Kawamura,
Y. Tatetsu,
Y. Gohda,
S. Tsuneyuki,
F. Komori
Abstract:
We show a new way to stabilize epitaxial structures against transforming bulk stable phases for Fe thin films on a vicinal Cu(001) surface. Atomically-resolved observations by scanning tunneling microscopy reveal that high-density Cu steps serve as strain relievers for kee** epitaxially-stabilized Fe fcc(001) lattice even at a transient thickness towards the bulk stable bcc(110) lattice. Spectro…
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We show a new way to stabilize epitaxial structures against transforming bulk stable phases for Fe thin films on a vicinal Cu(001) surface. Atomically-resolved observations by scanning tunneling microscopy reveal that high-density Cu steps serve as strain relievers for kee** epitaxially-stabilized Fe fcc(001) lattice even at a transient thickness towards the bulk stable bcc(110) lattice. Spectroscopic measurements further clarify the intrinsic electronic properties of the fcc Fe thin film in real space, implying electronic differences between 6 and 7 monolayer thick films induced by the modification of the lattice constant in the topmost layers.
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Submitted 22 May, 2016;
originally announced May 2016.
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Interfacial structure and electronic properties of AFM/FM magnetic multilayer revealed by Scanning Tunneling Microscope
Authors:
S. Nakashima,
T. Miyamachi,
F. Komori
Abstract:
Mixing of atoms at the interface was studied for Mn/Fe magnetic hetero-epitaxial layers on Cu(001) by scanning tunneling microscopy/spectroscopy. The formation of a surface alloy was observed when the Mn layer was thinner than 3 atomic layers. From the fourth layer, Fe segregation is suppressed, and a pure Mn surface appears. Accordingly, spectroscopic measurements revealed the electronic differen…
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Mixing of atoms at the interface was studied for Mn/Fe magnetic hetero-epitaxial layers on Cu(001) by scanning tunneling microscopy/spectroscopy. The formation of a surface alloy was observed when the Mn layer was thinner than 3 atomic layers. From the fourth layer, Fe segregation is suppressed, and a pure Mn surface appears. Accordingly, spectroscopic measurements revealed the electronic difference between the surface alloy and Mn layers. The surface electronic structure of the fourth Mn layer is slightly different from that of the fifth layers, which is attributed to the hybridization of the fourth layer with the underneath Fe-Mn alloy.
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Submitted 17 May, 2016;
originally announced May 2016.
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Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
Authors:
S. Ito,
B. Feng,
M. Arita,
A. Takayama,
R. -Y. Liu,
T. Someya,
W. -C. Chen,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
K. Kobayashi,
T. -C. Chiang,
I. Matsuda
Abstract:
The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave…
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The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Submitted 3 December, 2016; v1 submitted 11 May, 2016;
originally announced May 2016.
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High-resolution three-dimensional spin- and angle-resolved photoelectron spectrometer using vacuum ultraviolet laser light
Authors:
Koichiro Yaji,
Ayumi Harasawa,
Kenta Kuroda,
Sogen Toyohisa,
Mitsuhiro Nakayama,
Yukiaki Ishida,
Akiko Fukushima,
Shuntaro Watanabe,
Chuangtian Chen,
Fumio Komori,
Shik Shin
Abstract:
We describe a spin- and angle-resolved photoelectron spectroscopy (SARPES) apparatus with a vacuum-ultraviolet (VUV) laser ($hν$= 6.994 eV) developed at the Laser and Synchrotron Research Center at the Institute for Solid State Physics, The University of Tokyo. The spectrometer consists of a hemispherical photoelectron analyzer equipped with an electron deflector function and twin very-low-energy-…
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We describe a spin- and angle-resolved photoelectron spectroscopy (SARPES) apparatus with a vacuum-ultraviolet (VUV) laser ($hν$= 6.994 eV) developed at the Laser and Synchrotron Research Center at the Institute for Solid State Physics, The University of Tokyo. The spectrometer consists of a hemispherical photoelectron analyzer equipped with an electron deflector function and twin very-low-energy-electron-diffraction-type spin detectors, which allows us to analyze the spin vector of a photoelectron three-dimensionally with both high energy and angular resolutions. The combination of the high-performance spectrometer and the high-photon-flux VUV laser can achieve an energy resolution of 1.7 meV for SARPES. We demonstrate that the present laser-SARPES machine realizes a quick SARPES on the spin-split band structure of a Bi(111) film even with 7 meV energy and 0.7$^\circ$ angular resolutions along the entrance-slit direction. This laser-SARPES machine is applicable to the investigation of spin-dependent electronic states on an energy scale of a few meV.
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Submitted 21 April, 2016;
originally announced April 2016.
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Deviation from Fermi-liquid behavior in two-dimensional surface states of Au-induced nanowires on Ge(001) by correlation and localization
Authors:
K. Yaji,
R. Yukawa,
S. Kim,
Y. Ohtsubo,
P. Le Fèvre,
F. Bertran,
A. Taleb-Ibrahimi,
I. Matsuda,
K. Nakatsuji,
F. Komori
Abstract:
The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic s…
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The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic structure is one-dimensional. The two-dimensional metallic states exhibit remarkable suppression of the photoelectron intensity near a Fermi energy. This suppression can be explained by the correlation and localization effects in disordered metals, which is a deviation from a Fermi-liquid model.
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Submitted 16 February, 2016;
originally announced February 2016.
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Direct Evidence of Metallic Bands in a Monolayer Boron Sheet
Authors:
Baojie Feng,
** Zhang,
Ro-Ya Liu,
Iimori Takushi,
Chao Lian,
Lan Chen,
Kehui Wu,
Hui Li,
Sheng Meng,
Fumio Komori,
Iwao Matsuda
Abstract:
The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the \b{eta}12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one ele…
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The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the \b{eta}12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S point and a pair of hole pockets near the X point, which is supported by the first-principles calculations. The metallic boron allotrope in \b{eta}12 sheet opens the way to novel physics and chemistry in material science.
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Submitted 22 July, 2016; v1 submitted 16 December, 2015;
originally announced December 2015.
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Spin polarization and texture of the Fermi arcs in the Weyl Fermion semimetal TaAs
Authors:
Su-Yang Xu,
Ilya Belopolski,
Daniel S. Sanchez,
Madhab Neupane,
Guoqing Chang,
Koichiro Yaji,
Zhujun Yuan,
Chenglong Zhang,
Kenta Kuroda,
Guang Bian,
Cheng Guo,
Hong Lu,
Tay-Rong Chang,
Nasser Alidoust,
Hao Zheng,
Chi-Cheng Lee,
Shin-Ming Huang,
Chuang-Han Hsu,
Horng-Tay Jeng,
Arun Bansil,
Aris Alexandradinata,
Titus Neupert,
Takeshi Kondo,
Fumio Komori,
Shik Shin
, et al. (3 additional authors not shown)
Abstract:
A Weyl semimetal is a new state of matter that host Weyl fermions as quasiparticle excitations. The Weyl fermions at zero energy correspond to points of bulk band degeneracy, Weyl nodes, which are separated in momentum space and are connected only through the crystal's boundary by an exotic Fermi arc surface state. We experimentally measure the spin polarization of the Fermi arcs in the first expe…
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A Weyl semimetal is a new state of matter that host Weyl fermions as quasiparticle excitations. The Weyl fermions at zero energy correspond to points of bulk band degeneracy, Weyl nodes, which are separated in momentum space and are connected only through the crystal's boundary by an exotic Fermi arc surface state. We experimentally measure the spin polarization of the Fermi arcs in the first experimentally discovered Weyl semimetal TaAs. Our spin data, for the first time, reveal that the Fermi arcs' spin polarization magnitude is as large as 80% and possesses a spin texture that is completely in-plane. Moreover, we demonstrate that the chirality of the Weyl nodes in TaAs cannot be inferred by the spin texture of the Fermi arcs. The observed non-degenerate property of the Fermi arcs is important for the establishment of its exact topological nature, which reveal that spins on the arc form a novel type of 2D matter. Additionally, the nearly full spin polarization we observed (~80%) may be useful in spintronic applications.
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Submitted 5 November, 2015; v1 submitted 28 October, 2015;
originally announced October 2015.
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Atomic scale variation of electron tunneling into a Luttinger liquid ? : High resolution scanning tunneling spectroscopy study on Au/Ge(001)
Authors:
Jewook Park,
Kan Nakatsuji,
Tae-Hwan Kim,
Sun Kyu Song,
Fumio Komori,
Han Woong Yeom
Abstract:
Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide…
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Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide any evidence of a metallic 1D electron channel along the wires. Moreover, the atomically resolved tunneling spectra near the Fermi energy are dominated by local density-of-states features, deviating qualitatively from the power-law behavior. On the other hand, the defects strongly affect the tunneling spectra near the Fermi level. These results do not support the possibility of a TLL state for this system. An 1D metallic system with well-defined 1D bands and without defects are required for the STS study of a TLL state.
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Submitted 17 September, 2014;
originally announced September 2014.
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Unexpectedly robust protection from backscattering in the topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$
Authors:
Sunghun Kim,
Shunsuke Yoshizawa,
Yukiaki Ishida,
Kazuma Eto,
Kouji Segawa,
Yoichi Ando,
Shik Shin,
Fumio Komori
Abstract:
Electron scattering in the topological surface state (TSS) of the bulk-insulating topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ was studied using quasiparticle interference observed by scanning tunneling microscopy. It was found that not only the 180$^{\circ}$ backscattering but also a wide range of backscattering angles of 100$^{\circ}$--180$^{\circ}$ is effectively prohibited in…
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Electron scattering in the topological surface state (TSS) of the bulk-insulating topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ was studied using quasiparticle interference observed by scanning tunneling microscopy. It was found that not only the 180$^{\circ}$ backscattering but also a wide range of backscattering angles of 100$^{\circ}$--180$^{\circ}$ is effectively prohibited in the TSS. This conclusion was obtained by comparing the observed scattering vectors with the diameters of the constant-energy contours of the TSS, which were measured for both occupied and unoccupied states using time- and angle-resolved photoemission spectroscopy. The unexpectedly robust protection from backscattering in the TSS is a good news for applications, but it poses a challenge to the theoretical understanding of the transport in the TSS.
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Submitted 30 November, 2013;
originally announced December 2013.
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Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
Authors:
Takashi Kajiwara,
Yuzuru Nakamori,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Kan Nakatsuji,
Kazuhiko Mase,
Satoru Tanaka
Abstract:
We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate,…
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We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV.
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Submitted 16 October, 2012;
originally announced October 2012.
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Direct map** of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator
Authors:
Akinori Nishide,
Alexey A. Taskin,
Yasuo Takeichi,
Taichi Okuda,
Akito Kakizaki,
Toru Hirahara,
Kan Nakatsuji,
Fumio Komori,
Yoichi Ando,
Iwao Matsuda
Abstract:
Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillo…
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Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillouin zone, a spin-up band ($Σ_3$ band) was found to cross the Fermi energy only once, providing unambiguous evidence for the strong topological insulator phase. The observed spin-polarized band dispersions determine the "mirror chirality" to be -1, which agrees with the theoretical prediction based on first-principles calculations.
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Submitted 13 February, 2009;
originally announced February 2009.
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STM observation of initial growth of Sn atoms on Ge(001) surface
Authors:
K. Tomatsu,
K. Nakatsuji,
T. Iimori,
F. Komori
Abstract:
We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrat…
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We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the <310> direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(001) and Si(001) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface stain.
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Submitted 22 January, 2007;
originally announced January 2007.
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Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in the Surface States
Authors:
Yasumasa Takagi,
Yoshihide Yoshimoto,
Kan Nakatsuji,
Fumio Komori
Abstract:
Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an elec…
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Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an electronic excitation model by hot carriers injected to the surface states. The critical distance of the motion is anisotropic and consistent with the band structure of the surface states.
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Submitted 3 October, 2005;
originally announced October 2005.
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Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4x2) and p(2x2) by Scanning Tunneling Microscopy
Authors:
Yasumasa Takagi,
Yoshihide Yoshimoto,
Kan Nakatsuji,
Fumio Komori
Abstract:
The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained w…
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The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained with V_b >= - 0.6V. The observed local change of the reconstruction with hysteresis is ascribed to inelastic scattering during the electron tunneling in the electric field under the STM-tip.
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Submitted 25 March, 2003;
originally announced March 2003.
