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Fractional ac Josephson effect as evidence of topological hinge states in a Dirac semimetal NiTe2
Authors:
D. Yu. Kazmin,
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate Josephson current between two 5~$μ$m spaced superconducting indium leads, coupled to a NiTe$_2$ single crystal flake, which is a type-II Dirac semimetal. Under microwave irradiation, we demonstrate a.c. Josephson effect at millikelvin temperatures as a number of Shapiro steps. In addition to the integer ($n=1,2,3,4...$) steps, we observe fractional ones at half-intege…
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We experimentally investigate Josephson current between two 5~$μ$m spaced superconducting indium leads, coupled to a NiTe$_2$ single crystal flake, which is a type-II Dirac semimetal. Under microwave irradiation, we demonstrate a.c. Josephson effect at millikelvin temperatures as a number of Shapiro steps. In addition to the integer ($n=1,2,3,4...$) steps, we observe fractional ones at half-integer values $n=1/2,3/2,5/2$ and 7/2, which corresponds to $π$ periodicity of current-phase relationship. In contrast to previous investigations, we do not observe $4π$ periodicity (disappearance of the odd $n=1,3,5...$ Shapiro steps), while the latter is usually considered as a fingerprint of helical surface states in Dirac semimetals and topological insulators. We argue, that our experiment confirms Josephson current through the topological hinge states in NiTe$_2$: since one can exclude bulk supercurrent in 5~$μ$m long Josephson junctions, interference of the hinge modes is responsible for the $π$ periodicity, while stable odd Shapiro steps reflect chiral character of the topological hinge states.
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Submitted 4 July, 2024; v1 submitted 27 April, 2024;
originally announced April 2024.
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Crossover from relativistic to non-relativistic net magnetization for MnTe altermagnet candidate
Authors:
N. N. Orlova,
A. A. Avakyants,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally study magnetization reversal curves for MnTe single crystals, which is the altermagnetic candidate. Above 85~K temperature, we confirm the antiferromagnetic behavior of magnetization $M$, which is known for $α$--MnTe. Below 85~K, we observe anomalous low-field magnetization behavior, which is accompanied by the sophisticated $M(α)$ angle dependence with beating pattern as the int…
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We experimentally study magnetization reversal curves for MnTe single crystals, which is the altermagnetic candidate. Above 85~K temperature, we confirm the antiferromagnetic behavior of magnetization $M$, which is known for $α$--MnTe. Below 85~K, we observe anomalous low-field magnetization behavior, which is accompanied by the sophisticated $M(α)$ angle dependence with beating pattern as the interplay between $M(α)$ maxima and minima: in low fields, $M(α)$ shows ferromagnetic-like 180$^\circ$ periodicity, while at high magnetic fields, the periodicity is changed to the 90$^\circ$ one. This angle dependence is the most striking result of our experiment, while it can not be expected for standard magnetic systems. In contrast, in altermagnets, symmetry allows ferromagnetic behavior only due to the spin-orbit coupling. Thus, we claim that our experiment shows the effect of weak spin-orbit coupling in MnTe, with crossover from relativistic to non-relativistic net magnetization, and, therefore, we experimentally confirm altermagnetism in MnTe.
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Submitted 22 March, 2024;
originally announced March 2024.
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Surface spin polarization in the magnetic response of GeTe Rashba ferroelectric
Authors:
A. A. Avakyants,
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate magnetization reversal curves for a GeTe topological semimetal. In addition to the known lattice diamagnetic response, we observe narrow magnetization loop in low fields, which should not be expected for non-magnetic GeTe. The hysteresis is unusual, so the saturation level is negative in positive fields, and the loop is passed clockwise, in contrast to standard ferrom…
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We experimentally investigate magnetization reversal curves for a GeTe topological semimetal. In addition to the known lattice diamagnetic response, we observe narrow magnetization loop in low fields, which should not be expected for non-magnetic GeTe. The hysteresis is unusual, so the saturation level is negative in positive fields, and the loop is passed clockwise, in contrast to standard ferromagnetic behavior. The experimental hysteresis curves can not be obtained from usual ferromagnetic ones by adding/subtracting of any linear dependence, or even by considering several interacting magnetic phases. The possibility of several phases is also eliminated by the remanence plots technique (Henkel or δM plots). We explain our results as a direct consequence of the correlation between ferroelectricity and spin-polarized surface states in GeTe, similarly to magnetoelectric structures.
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Submitted 20 November, 2023;
originally announced November 2023.
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Ferromagnetic response of thin NiI$_2$ flakes up to room temperatures
Authors:
N. N. Orlova,
A. A. Avakyants,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We investigate the magnetic response of thin NiI$_2$ flakes for temperatures above 80~K. Since no magnetic ordering is expected for bulk NiI$_2$, we observe clear paramagnetic response for massive NiI$_2$ single crystals. In contrast, thin NiI$_2$ flakes show well-defined ferromagnetic hysteresis loop within $\pm2$~kOe field range. The value of the response does not scale with the sample mass, fer…
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We investigate the magnetic response of thin NiI$_2$ flakes for temperatures above 80~K. Since no magnetic ordering is expected for bulk NiI$_2$, we observe clear paramagnetic response for massive NiI$_2$ single crystals. In contrast, thin NiI$_2$ flakes show well-defined ferromagnetic hysteresis loop within $\pm2$~kOe field range. The value of the response does not scale with the sample mass, ferromagnetic hysteresis can be seen for any flake orientation in the external field, so it originates from the sample surface, possibly, due to the anisotropic exchange (Kitaev interaction). The observed ferromagnetism is weakly sensitive to temperature up to 300~K. If a flake is multiply exposed to air, ferromagnetic hysteresis is accompanied by the periodic modulation of the magnetization curves, which is usually a fingerprint of the multiferroic state. While NiI$_2$ flakes can not be considered as multiferroics above 80~K, surface degradation due to the crystallohydrate formation decreases the symmetry of NiI$_2$ surface, which produces the surface ferroelectric polarization in addition to the described above ferromagnetic one.
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Submitted 15 September, 2023;
originally announced September 2023.
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Reentrant proximity-induced superconductivity for GeTe semimetal
Authors:
V. D. Esin,
D. Yu. Kazmin,
Yu. S. Barash,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate charge transport in In-GeTe and In-GeTe-In proximity devices, which are formed as junctions between superconducting indium leads and thick single crystal flakes of $α$-GeTe topological semimetal. We observe nonmonotonic effects of the applied external magnetic field, including reentrant superconductivity in In-GeTe-In Josephson junctions: supercurrent reappears at som…
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We experimentally investigate charge transport in In-GeTe and In-GeTe-In proximity devices, which are formed as junctions between superconducting indium leads and thick single crystal flakes of $α$-GeTe topological semimetal. We observe nonmonotonic effects of the applied external magnetic field, including reentrant superconductivity in In-GeTe-In Josephson junctions: supercurrent reappears at some finite magnetic field. For a single In-GeTe Andreev junction, the superconducting gap is partially suppressed in zero magnetic field, while the gap is increased nearly to the bulk value for some finite field before its full suppression. We discuss possible reasons for the results obtained, taking into account spin polarization of Fermi arc surface states in topological semimetal $α$-GeTe with a strong spin-orbit coupling. In particular, the zero-field surface state spin polarization partially suppresses the superconductivity, while it is recovered due to the modified spin-split surface state configuration in finite fields. As an alternative possible scenario, the transition into the Fulde-Ferrell-Larkin-Ovchinnikov state is discussed. However, the role of strong spin-orbit coupling in forming the nonmonotonic behavior has not been analyzed for heterostructures in the Fulde-Ferrell-Larkin-Ovchinnikov state, which is crucial for junctions involving GeTe topological semimetal.
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Submitted 13 April, 2023; v1 submitted 12 April, 2023;
originally announced April 2023.
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Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe
Authors:
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gat…
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We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification.
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Submitted 30 March, 2023;
originally announced March 2023.
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Surface ferromagnetism in a chiral topological semimetal CoSi
Authors:
N. N. Orlova,
A. A. Avakyants,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
Despite the chiral topological semimetal CoSi is known as bulk diamagnetic, it shows unusual surface ferromagnetism of debatable origin. The ferromagnetic ordering has been attributed to the distorted bonds, the superlattice of ordered vacancies, or even to topological surface textures due to the spin polarization in the neighboring Fermi arcs. We experimentally compare magnetization reversal curv…
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Despite the chiral topological semimetal CoSi is known as bulk diamagnetic, it shows unusual surface ferromagnetism of debatable origin. The ferromagnetic ordering has been attributed to the distorted bonds, the superlattice of ordered vacancies, or even to topological surface textures due to the spin polarization in the neighboring Fermi arcs. We experimentally compare magnetization reversal curves for initially oxidized CoSi single crystals and cleaved samples with a fresh, oxide-free surface. While the oxidized CoSi samples do not show sizable ferromagnetism, the fresh CoSi surface gives a strong ferromagnetic response, which is accompanied by the pronounced modulation of the angle dependence of magnetization, as it can be expected for easy and hard axes in a ferromagnet. In addition to the first order reversal curves analysis, this observation allows us to distinguish between different mechanisms of the ferromagnetic ordering in CoSi single crystals. We conclude that the surface states-induced RKKY interaction between distorted bonds near the sample surface is responsible for the strong ferromagnetic multi-domain behavior for freshly cleaved samples.
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Submitted 27 December, 2022; v1 submitted 23 December, 2022;
originally announced December 2022.
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Interface superconductivity in a type-II Dirac semimetal NiTe$_2$
Authors:
V. D. Esin,
O. O. Shvetsov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate charge transport through a single planar junction between a NiTe$_2$ Dirac semimetal and a normal gold lead. At millikelvin temperatures we observe non-Ohmic $dV/dI(V)$ behavior resembling Andreev reflection at a superconductor -- normal metal interface, while NiTe$_2$ bulk remains non-superconducting. The conclusion on superconductivity is also supported by suppressi…
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We experimentally investigate charge transport through a single planar junction between a NiTe$_2$ Dirac semimetal and a normal gold lead. At millikelvin temperatures we observe non-Ohmic $dV/dI(V)$ behavior resembling Andreev reflection at a superconductor -- normal metal interface, while NiTe$_2$ bulk remains non-superconducting. The conclusion on superconductivity is also supported by suppression of the effect by temperature and magnetic field. In analogy with the known results for Cd$_3$As$_2$ Dirac semimetal, we connect this behavior with interfacial superconductivity due to the flat-band formation at the Au-NiTe$_2$ interface. Since the flat-band and topological surface states are closely connected, the claim on the flat-band-induced superconductivity is also supported by the Josephson current through the topological surface states on the pristine NiTe$_2$ surface. We demonstrate the pronounced Josephson diode effect, which results from the momentum shift of topological surface states of NiTe$_2$ under an in-plane magnetic field.
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Submitted 13 October, 2022;
originally announced October 2022.
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Second-harmonic response as a tool to detect spin textures in magnetic nodal-line semimetal Fe$_3$GeTe$_2$
Authors:
V. D. Esin,
A. A. Avakyants,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe$_3$GeTe$_2$. For zero magnetic field, the observed response depends as a square of the longitudinal current, as it should be expected for non-linear Hall effect. The magnetic field behavior is found to be sophisticated: while the first-harmonic response shows th…
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We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe$_3$GeTe$_2$. For zero magnetic field, the observed response depends as a square of the longitudinal current, as it should be expected for non-linear Hall effect. The magnetic field behavior is found to be sophisticated: while the first-harmonic response shows the known anomalous Hall hysteresis in FGT, the second-harmonic Hall voltage is characterized by the pronounced high-field hysteresis and flat ($B$-independent) region with curves touching at low fields. The high-field hysteresis strongly depends on the magnetic field sweep rate, so it reflects some slow relaxation process. For the lowest rates, it is also accomplished by multiple crossing points. Similar shape of the second-harmonic hysteresis is known for skyrmion spin textures in non-linear optics. Since skyrmions have been demonstrated for FGT by direct visualization techniques, we can connect the observed high-field relaxation with deformation of the skyrmion lattice. Thus, the second-harmonic Hall voltage response can be regarded as a tool to detect spin textures in transport experiments.
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Submitted 24 August, 2022; v1 submitted 27 June, 2022;
originally announced June 2022.
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Evidence for surface spin structures from first order reversal curves in Co3Sn2S2 and Fe3GeTe2 magnetic topological semimetals
Authors:
A. A. Avakyants,
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We study magnetization reversal and first order reversal curves for two different magnetic topological semimetals, Co3Sn2S2 and Fe3GeTe2, in a wide temperature range. For the magnetization reversal, we observe strong temperature dependence of the initial (low-temperature) step-like magnetization switchings, so the inverted hysteresis appears at high temperatures. Usually, the inverted hysteresis i…
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We study magnetization reversal and first order reversal curves for two different magnetic topological semimetals, Co3Sn2S2 and Fe3GeTe2, in a wide temperature range. For the magnetization reversal, we observe strong temperature dependence of the initial (low-temperature) step-like magnetization switchings, so the inverted hysteresis appears at high temperatures. Usually, the inverted hysteresis is a fingerprint of material with two independent magnetic phases, the inversion reflects the phase interaction. First order reversal curve analysis confirms the two-phase behavior even at the lowest temperatures of the experiment. While the bulk ferromagnetic magnetization shows strong temperature dependence, one of the observed phases demonstrates perfect stability below the Curie temperature. The obtained hysteresis loops are of the bow-tie type, which is usually ascribed to appearance of the skyrmionic phase. The described two-phase behavior is mostly identical for Co3Sn2S2 and Fe3GeTe2 magnetic topological semimetals, only the characteristic temperatures differ for these materials. The specifics of our experiment is the excellent temperature stability of the second phase, while the skyrmions are usually observed near the Curie temperature. On the other hand, temperature stability can be expected for surface-state induced spin textures due to the topological protection of surface states in topological semimetals. This also explains the universal behavior of the second phase for two different topological semimetals Co3Sn2S2 and FGT. Both these materials have strongly different bulk properties, the only similarity is the presence of the topological surface states. Thus, we can ascribe the second, temperature-stable magnetic phase to the surface states in topological semimetals.
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Submitted 19 December, 2022; v1 submitted 7 June, 2022;
originally announced June 2022.
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Dynamic negative capacitance regime in GeTe Rashba ferroelectric
Authors:
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for three-dimensional flakes, electron concentration is not sensitive to the gate electric field due to the screening by bulk carriers. Unexpectedly, we observe that sample capa…
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We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for three-dimensional flakes, electron concentration is not sensitive to the gate electric field due to the screening by bulk carriers. Unexpectedly, we observe that sample capacitance C is strongly diminishing for both gate field polarities, so C(Vg) is a maximum near the zero gate voltage. Also, we observe well-developed hysteresis with the gate voltage sweep direction for the experimental C(Vg) curves. From our analysis, the capacitance behavior is explained by the known dependence of the Rashba parameter on the electric field for giant Rashba splitting in GeTe. In this case, the hysteresis in capacitance should be ascribed to polarization evolution in GeTe surface layers, which also allows to realize the regime of dynamic negative capacitance. The latter can be directly observed in time-dependent resistive measurements, as non-monotonic evolution of voltage response to the step-like current pulse. Thus, the negative capacitance regime can indeed improve performance and, therefore, the energy efficiency of electronic devices.
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Submitted 15 September, 2022; v1 submitted 1 June, 2022;
originally announced June 2022.
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Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe$_2$
Authors:
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor…
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The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface.
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Submitted 4 April, 2022;
originally announced April 2022.
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Josephson spin-valve realization in the magnetic nodal-line topological semimetal Fe$_3$GeTe$_2$
Authors:
O. O. Shvetsov,
Yu. S. Barash,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
Three-dimensional van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT) is regarded as a candidate for the magnetic topological nodal line semimetal. We investigate lateral electron transport between two 3~$μ$m spaced superconducting In leads beneath a thick three-dimensional FGT exfoliated flake. At low 30~mK temperature, we observe Josephson supercurrent that exhibits unusual critical current $I_c$ sup…
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Three-dimensional van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT) is regarded as a candidate for the magnetic topological nodal line semimetal. We investigate lateral electron transport between two 3~$μ$m spaced superconducting In leads beneath a thick three-dimensional FGT exfoliated flake. At low 30~mK temperature, we observe Josephson supercurrent that exhibits unusual critical current $I_c$ suppression by the magnetic field $B$. The overall $I_c(B)$ pattern is asymmetric in respect to the B sign. We demonstrate, that the asymmetry is defined by the magnetic field sweep direction, so the $I_c(B)$ pattern is strictly reversed (as $B$ to $-B$ inversion) for the opposite sweeps. We also observe an interplay between maximum and minimum in $I_c(B)$ in normal magnetic fields, while there are fast aperiodic $I_c(B)$ fluctuations for the in-plane ones. These effects can not be expected for homogeneous superconductor-ferromagnet-superconductor junctions, while they are known for Josephson spin valves. The mostly possible scenario for Josephson spin valve realization in FGT is the misalignment of spin polarizations of the Fermi arc surface states and ferromagnetic FGT bulk, but we also discuss possible influence of spin-dependent transport between magnetic domains.
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Submitted 31 August, 2021;
originally announced August 2021.
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Thermoelectric response as a tool to observe electrocaloric effect in a thin conducting ferroelectric SnSe flake
Authors:
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate thermoelectric response of a 100~nm thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage $V_{xy}^{2ω}$, which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current $I_{ac}$. In addition to strongly non-monotonous dependen…
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We experimentally investigate thermoelectric response of a 100~nm thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage $V_{xy}^{2ω}$, which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current $I_{ac}$. In addition to strongly non-monotonous dependence $V_{xy}^{2ω}$, we observe that dc field direction controls the sign of the temperature gradient in the SnSe flake. We provide arguments, that electrocaloric effect is the mostly probable reason for the results obtained. Thus, our experiment can be understood as demonstration of the possibility to induce electrocaloric effect by in-plane electric field in conducting ferroelectric crystals and to detect it by thermoelectric response.
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Submitted 13 July, 2021;
originally announced July 2021.
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Magnon modes as a joint effect of surface ferromagnetism and spin-orbite coupling in CoSi chiral topological semimetal
Authors:
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
CoSi single crystal is a known realization of a chiral topological semimetal with simultaneously broken mirror and inversion symmetries. In addition to the symmetry-induced spin-orbit coupling, surface ferromagnetism is known in nominally diamagnetic CoSi structures, which appears due to the distorted bonds and ordered vacancies near the surface. We experimentally investigate electron transport th…
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CoSi single crystal is a known realization of a chiral topological semimetal with simultaneously broken mirror and inversion symmetries. In addition to the symmetry-induced spin-orbit coupling, surface ferromagnetism is known in nominally diamagnetic CoSi structures, which appears due to the distorted bonds and ordered vacancies near the surface. We experimentally investigate electron transport through a thin CoSi flake at high current density. Surprisingly, we demonstrate $dV/dI(I)$ curves which are qualitatively similar to ones for ferromagnetic multilayers with characteristic $dV/dI$ magnon peaks and unconventional magnetic field evolution of the peaks' positions. We understand these observations as a result of current-induced spin polarization due to the significant spin-orbit coupling in CoSi. Scattering of non-equilibrium spin-polarized carriers within the surface ferromagnetic layer is responsible for the precessing spin-wave excitations, so the observed magnon modes are the joint effect of surface ferromagnetism and spin-orbit coupling in a CoSi chiral topological semimetal. Thus, thin CoSi flakes behave as magnetic conductors with broken inversion symmetry, which is important for different spintronic phenomena.
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Submitted 27 April, 2021;
originally announced April 2021.
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Coalescence of Andreev bound states on the surface of a chiral topological semimetal
Authors:
V. D. Esin,
Yu. S. Barash,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate the magnetic field dependence of Andreev transport through a region of proximity-induced superconductivity in CoSi topological chiral semimetal. With increasing parallel to the CoSi surface magnetic field, the sharp subgap peaks, associated with Andreev bound states, move together to nearly-zero bias position, while there is only monotonous peaks suppression for norma…
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We experimentally investigate the magnetic field dependence of Andreev transport through a region of proximity-induced superconductivity in CoSi topological chiral semimetal. With increasing parallel to the CoSi surface magnetic field, the sharp subgap peaks, associated with Andreev bound states, move together to nearly-zero bias position, while there is only monotonous peaks suppression for normal to the surface fields. The zero-bias $dV/dI$ resistance value is perfectly stable with changing the in-plane magnetic field. As the effects are qualitatively similar for In and Nb superconducting leads, they reflect the properties of proximized CoSi surface. The Andreev states coalescence and stability of the zero-bias $dV/dI$ value with increasing in-plane magnetic field are interpreted as the joined effect of the strong SOC and the Zeeman interaction, known for proximized semiconductor nanowires. We associate the observed magnetic field anisotropy with the recently predicted in-plane polarized spin texture of the Fermi arcs surface states.
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Submitted 14 July, 2021; v1 submitted 15 February, 2021;
originally announced February 2021.
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Switching ferroelectricity in SnSe across diffusionless martensitic phase transition
Authors:
N. N. Orlova,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$μ$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $α$-$Pnma$ -- $β$-$Cmcm$ diffusionless martensitic…
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We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$μ$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $α$-$Pnma$ -- $β$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $β$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $α$-$Pnma$ -- $β$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.
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Submitted 11 December, 2020;
originally announced December 2020.
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Evidence of the ferroelectric polarization in charge transport through WTe$_2$ Weyl semimetal surface
Authors:
N. N. Orlova,
N. S. Ryshkov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We investigate electron transport along the surface of WTe$_2$ three-dimensional single crystals, which are characterized by coexistence of Weyl semimetal conductivity and ferroelectricity at room temperature. We find that non-linear behavior of $dV/dI(I)$ WTe$_2$ differential resistance is accompanied by slow relaxation process, which appears as the $dV/dI(I)$ dependence on the sign of the curren…
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We investigate electron transport along the surface of WTe$_2$ three-dimensional single crystals, which are characterized by coexistence of Weyl semimetal conductivity and ferroelectricity at room temperature. We find that non-linear behavior of $dV/dI(I)$ WTe$_2$ differential resistance is accompanied by slow relaxation process, which appears as the $dV/dI(I)$ dependence on the sign of the current change. This observation is confirmed by direct investigation of time-dependent relaxation curves. While strongly non-linear differential resistance should be expected for the zero-gap WTe$_2$, the slow relaxation in transport is very unusual for well-conducting semimetals at room temperature. We establish, that non-monotonous dependence of the amplitude of the effect on driving current $ΔdV/dI(I)$ well corresponds to the known Sawyer-Tower's ferroelectric hysteresis loop. This conclusion is also confirmed by gate voltage dependencies, so our results can be understood as a direct demonstration of WTe$_2$ ferroelectric polarization in charge transport experiment.
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Submitted 23 July, 2020;
originally announced July 2020.
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Second-harmonic voltage responce for the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate longitudinal and transverse second-harmonic voltage response to ac electrical current for a magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. In contrast to the previously observed Berry-curvature induced non-linear Hall effect for non-magnetic Weyl and Dirac semimetals, the second-harmonic transverse voltage demonstrates sophisticated interplay of different effects for Co…
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We experimentally investigate longitudinal and transverse second-harmonic voltage response to ac electrical current for a magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. In contrast to the previously observed Berry-curvature induced non-linear Hall effect for non-magnetic Weyl and Dirac semimetals, the second-harmonic transverse voltage demonstrates sophisticated interplay of different effects for Co$_3$Sn$_2$S$_2$. In high magnetic fields, it is of Seebeck-like square-B law, while the low-field behavior is found to be linear and sensitive to the direction of sample magnetization. The latter can be expected both for the non-linear Hall effect and for the surface state contribution to the Seebeck effect in Weyl semimetals. Thus, thermoelectric effects are significant in Co$_3$Sn$_2$S$_2$, unlike non-magnetic Weyl and Dirac materials.
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Submitted 4 May, 2020;
originally announced May 2020.
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Band gap reconstruction at the interface between black phosphorus and a gold electrode
Authors:
N. N. Orlova,
N. S. Ryshkov,
A. A. Zagitova,
V. I. Kulakov,
A. V. Timonina,
D. N. Borisenko,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theo…
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We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications.
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Submitted 26 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Magnetically stable zero-bias anomaly in Andreev contact to the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
O. O. Shvetsov,
Yu. S. Barash,
S. V. Egorov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
Being encouraged by the interplay between topology, superconductivity and magnetism, we experimentally investigate charge transport through the interface between the Nb superconductor and the time-reversal symmetry breaking Weyl semimetal Co$_3$Sn$_2$S$_2$. In addition to the proximity induced superconducting gap, we observe several subgap features, among which the most interesting is the prominen…
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Being encouraged by the interplay between topology, superconductivity and magnetism, we experimentally investigate charge transport through the interface between the Nb superconductor and the time-reversal symmetry breaking Weyl semimetal Co$_3$Sn$_2$S$_2$. In addition to the proximity induced superconducting gap, we observe several subgap features, among which the most interesting is the prominent subgap zero-bias anomaly, absolutely stable against external magnetic fields up to the critical field of Nb. As the promising scenario for the zero-bias anomaly to appear in transport characteristics, we consider the proximity induced zero-energy Andreev bound states interfaced with the half-metallic Co$_3$Sn$_2$S$_2$ and influenced by the strong spin-orbit coupling and large Zeeman splitting.
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Submitted 10 February, 2020;
originally announced February 2020.
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Spin-dependent transport through a Weyl semimetal surface
Authors:
V. D. Esin,
D. N. Borisenko,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and non-magnetic Weyl semimetal WTe$_2$, respectively. Due to the ferromagnetic side of the junction, we investigate spin-polarized transport through the Weyl semimetal…
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We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and non-magnetic Weyl semimetal WTe$_2$, respectively. Due to the ferromagnetic side of the junction, we investigate spin-polarized transport through the Weyl semimetal surface. For both structures, we demonstrate similar current-voltage characteristics, with hysteresis at low currents and sharp peaks in differential resistance at high ones. Despite this behavior resembles the known current-induced magnetization dynamics in ferromagnetic structures, evolution of the resistance peaks with magnetic field is unusual. We connect the observed effects with current-induced spin dynamics in Weyl topological surface states.
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Submitted 27 April, 2020; v1 submitted 7 February, 2020;
originally announced February 2020.
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Lateral Josephson effect on the surface of Co$_3$Sn$_2$S$_2$ magnetic Weyl semimetal
Authors:
O. O. Shvetsov,
V. D. Esin,
Yu. S. Barash,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally study lateral electron transport between two 5~$μ$m spaced superconducting indium leads on a top of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. For the disordered magnetic state of Co$_3$Sn$_2$S$_2$ crystal, we only observe the Andreev reflection in the proximity of each of the leads, which is indicative of highly transparent In-Co$_3$Sn$_2$S$_2$ interfaces. If the sample is homog…
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We experimentally study lateral electron transport between two 5~$μ$m spaced superconducting indium leads on a top of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. For the disordered magnetic state of Co$_3$Sn$_2$S$_2$ crystal, we only observe the Andreev reflection in the proximity of each of the leads, which is indicative of highly transparent In-Co$_3$Sn$_2$S$_2$ interfaces. If the sample is homogeneously magnetized, it demonstrates well-developed anomalous Hall effect state. In this regime we find the Josephson current that takes place even for 5~$μ$m long junctions and shows the unusual magnetic field and temperature dependencies. As a possible reason for the results obtained, we discuss the contribution to the proximity-induced spin-triplet Josephson current from the topologically protected Fermi-arc states on the surface of Co$_3$Sn$_2$S$_2$.
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Submitted 24 January, 2020; v1 submitted 19 September, 2019;
originally announced September 2019.
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Multiple magnon modes in the Co$_3$Sn$_2$S$_2$ Weyl semimetal candidate
Authors:
O. O. Shvetsov,
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate electron transport in kagome-lattice ferromagnet Co$_3$Sn$_2$S$_2$, which is regarded as a time-reversal symmetry broken Weyl semimetal candidate. We demonstrate $dV/dI(I)$ curves with pronounced asymmetric $dV/dI$ spikes, similar to those attributed to current-induced spin-wave excitations in ferromagnetic multilayers. In contrast to multilayers, we observe several…
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We experimentally investigate electron transport in kagome-lattice ferromagnet Co$_3$Sn$_2$S$_2$, which is regarded as a time-reversal symmetry broken Weyl semimetal candidate. We demonstrate $dV/dI(I)$ curves with pronounced asymmetric $dV/dI$ spikes, similar to those attributed to current-induced spin-wave excitations in ferromagnetic multilayers. In contrast to multilayers, we observe several $dV/dI$ spikes' sequences at low, $\approx$10$^4$ A/cm$^2$, current densities for a thick single-crystal Co$_3$Sn$_2$S$_2$ flake in the regime of fully spin-polarized bulk. The spikes at low current densities can be attributed to novel magnon branches in magnetic Weyl semimetals, which are predicted due to the coupling between two magnetic moments mediated by Weyl fermions. Presence of spin-transfer effects at low current densities in Co$_3$Sn$_2$S$_2$ makes the material attractive for applications in spintronics.
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Submitted 5 September, 2019; v1 submitted 16 April, 2019;
originally announced April 2019.
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Non-linear Hall effect in three-dimensional Weyl and Dirac semimetals
Authors:
O. O. Shvetsov,
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends quadratically on the longitudinal current in zero magnetic field. Despite this observation well corresponds to the theoretical predictions, only magnetic field depen…
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We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends quadratically on the longitudinal current in zero magnetic field. Despite this observation well corresponds to the theoretical predictions, only magnetic field dependence allows to distinguish the non-linear Hall effect from a thermoelectric response. We demonstrate that second-harmonic Hall voltage shows odd-type dependence on the direction of the magnetic field, which is a strong argument in favor of current-magnetization effects. In contrast, one order of magnitude higher thermopower signal is independent of the magnetic field direction.
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Submitted 8 February, 2019; v1 submitted 7 February, 2019;
originally announced February 2019.
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Surface superconductivity in a three-dimensional Cd$_3$As$_2$ semimetal
Authors:
O. O. Shvetsov,
V. D. Esin,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate charge transport through a single planar junction between Cd$_3$As$_2$ Dirac semimetal and a normal Au lead. For non-superconducting bulk Cd$_3$As$_2$ samples, we observe non-Ohmic $dV/dI(V)$ curves, which strongly resemble standard Andreev reflection with well-defined superconducting gap. Andreev-like behavior is demonstrated for Cd$_3$As$_2$ samples with different s…
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We experimentally investigate charge transport through a single planar junction between Cd$_3$As$_2$ Dirac semimetal and a normal Au lead. For non-superconducting bulk Cd$_3$As$_2$ samples, we observe non-Ohmic $dV/dI(V)$ curves, which strongly resemble standard Andreev reflection with well-defined superconducting gap. Andreev-like behavior is demonstrated for Cd$_3$As$_2$ samples with different surface and contact preparation techniques. We connect this behavior with surface superconductivity due to the flat-band formation in Cd$_3$As$_2$, which has been predicted theoretically. The conclusion on superconductivity is also supported by the gap suppression by magnetic fields or temperature.
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Submitted 1 April, 2019; v1 submitted 6 November, 2018;
originally announced November 2018.
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Multivalued current-phase relationship in a.c. Josephson effect for a three-dimensional Weyl semimetal WTe$_2$
Authors:
O. O. Shvetsov,
A. Kononov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe$_2$ crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in long 5~$μ$m In-WTe$_2$-In junctions, as confirmed by the observation of integer (1,2,3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. Demonstration of fractional a.c. Jo…
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We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe$_2$ crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in long 5~$μ$m In-WTe$_2$-In junctions, as confirmed by the observation of integer (1,2,3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. Demonstration of fractional a.c. Josephson effect indicates multivalued character of the current-phase relationship, which we connect with Weyl topological surface states contribution to Josephson current. In contrast to topological insulators and Dirac semimetals, we do not observe $4π$ periodicity in a.c. Josephson effect for WTe$_2$ at different frequencies and power, which might reflect chiral character of the Fermi arc surface states in Weyl semimetal.
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Submitted 19 September, 2018; v1 submitted 10 September, 2018;
originally announced September 2018.
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Spin wave effects in transport between a ferromagnet and a Weyl semimetal surface
Authors:
A. Kononov,
O. O. Shvetsov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe non-Ohmic $dV/dI(I)$ behavior with an overall increase of differential resistance $dV/dI$ with current bias, which is accomplished by current-induced switchings. This b…
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We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe non-Ohmic $dV/dI(I)$ behavior with an overall increase of differential resistance $dV/dI$ with current bias, which is accomplished by current-induced switchings. This behavior is inconsistent with trivial interface scattering, but it is well known for spin-polarized transport with magnon emission. Thus, we interpret the experimental results in terms of spin wave excitation in spin textures in the WTe$_2$ topological surface states, which is supported by the obtained magnetic field and temperature $dV/dI(I)$ dependencies.
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Submitted 10 July, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Signature of Fermi arc surface states in Andreev reflection at the WTe$_2$ Weyl semimetal surface
Authors:
A. Kononov,
O. O. Shvetsov,
S. V. Egorov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe$_2$ Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for…
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We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe$_2$ Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe$_2$ interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states.
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Submitted 10 April, 2018; v1 submitted 9 April, 2018;
originally announced April 2018.
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Realization of a double-slit SQUID geometry by Fermi arc surface states in a WTe$_2$ Weyl semimetal
Authors:
O. O. Shvetsov,
A. Kononov,
A. V. Timonina,
N. N. Kolesnikov,
E. V. Deviatov
Abstract:
We experimentally study electron transport between two superconducting indium leads, coupled to the WTe$_2$ crystal surface. WTe$_2$ is characterized by presence of Fermi arc surface states, as a predicted type-II Weyl semimetal candidate. We demonstrate Josephson current in unprecedentedly long 5~$μ$m In-WTe$_2$-In junctions, which is confirmed by $I-V$ curves evolution with temperature and magne…
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We experimentally study electron transport between two superconducting indium leads, coupled to the WTe$_2$ crystal surface. WTe$_2$ is characterized by presence of Fermi arc surface states, as a predicted type-II Weyl semimetal candidate. We demonstrate Josephson current in unprecedentedly long 5~$μ$m In-WTe$_2$-In junctions, which is confirmed by $I-V$ curves evolution with temperature and magnetic field. The Josephson current is mostly carried by the topological surface states, which we demonstrate in a double-slit SQUID geometry, realized by coupling the opposite WTe$_2$ crystal surfaces.
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Submitted 29 January, 2018;
originally announced January 2018.
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Photoluminescence and Raman investigation of stability of InSe and GaSe thin films
Authors:
O. Del Pozo-Zamudio,
S. Schwarz,
J. Klein,
R. C. Schofield,
E. A. Chekhovich,
O. Ceylan,
E. Margapoti,
A. I. Dmitriev,
G. V. Lashkarev,
D. N. Borisenko,
N. N. Kolesnikov,
J. J. Finley,
A. I. Tartakovskii
Abstract:
Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when…
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Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.
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Submitted 18 June, 2015;
originally announced June 2015.
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Optical properties of two-dimensional gallium chalcogenide films
Authors:
O. Del Pozo-Zamudio,
S. Schwarz,
M. Sich,
I. A. Akimov,
M. Bayer,
R. C. Schofield,
E. A. Chekhovich,
B. J. Robinson,
N. D. Kay,
O. V. Kolosov,
A. I. Dmitriev,
G. V. Lashkarev,
D. N. Borisenko,
N. N. Kolesnikov,
A. I. Tartakovskii
Abstract:
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we p…
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Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
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Submitted 17 March, 2015; v1 submitted 9 January, 2015;
originally announced January 2015.
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Two-dimensional metal-chalcogenide films in tunable optical microcavities
Authors:
S. Schwarz,
S. Dufferwiel,
P. M. Walker,
F. Withers,
A. A. P. Trichet,
M. Sich,
F. Li,
E. A. Chekhovich,
D. N. Borisenko,
N. N. Kolesnikov,
K. S. Novoselov,
M. S. Skolnick,
J. M Smith,
D. N. Krizhanovskii,
A. I. Tartakovskii
Abstract:
Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here…
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Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals.
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Submitted 15 August, 2014;
originally announced August 2014.
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Binding energy and stability of heavy and superheavy nuclei
Authors:
N. N. Kolesnikov
Abstract:
Three different ways for description of binding energy of superheavy nuclei are discussed. First, one can consider superheavy nuclei as a part of a whole system of nuclei for which a global mass formula is found. Another way is the detailed local description of energy of superheavy nuclei taking into account the effects of shells and subshells. The third way of description, applied for nuclei in t…
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Three different ways for description of binding energy of superheavy nuclei are discussed. First, one can consider superheavy nuclei as a part of a whole system of nuclei for which a global mass formula is found. Another way is the detailed local description of energy of superheavy nuclei taking into account the effects of shells and subshells. The third way of description, applied for nuclei in the region limited by principal magic numbers, is attached to the beta-stability line.
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Submitted 23 February, 2012;
originally announced February 2012.
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Origins of large critical temperature variations in single layer cuprates
Authors:
A. D. Palczewski,
T. Kondo,
R. Khasanov,
N. N. Kolesnikov,
A. V. Timonina,
E. Rotenberg,
T. Ohta,
A. Bendounan,
Y. Sassa,
A. V. Fedorov,
S. Pailh/'es,
A. F. Santander-Syro,
J. Chang,
M. Shi,
J. Mesot,
H. M. Fretwell,
A. Kaminski
Abstract:
We study the electronic structures of two single layer superconducting cuprates, Tl$_2$Ba$_2$CuO$_{6+δ}$ (Tl2201) and (Bi$_{1.35}$Pb$_{0.85}$)(Sr$_{1.47}$La$_{0.38}$)CuO$_{6+δ}$ (Bi2201) which have very different maximum critical temperatures (90K and 35K respectively) using Angular Resolved Photoemission Spectroscopy (ARPES). We are able to identify two main differences in their electronic prop…
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We study the electronic structures of two single layer superconducting cuprates, Tl$_2$Ba$_2$CuO$_{6+δ}$ (Tl2201) and (Bi$_{1.35}$Pb$_{0.85}$)(Sr$_{1.47}$La$_{0.38}$)CuO$_{6+δ}$ (Bi2201) which have very different maximum critical temperatures (90K and 35K respectively) using Angular Resolved Photoemission Spectroscopy (ARPES). We are able to identify two main differences in their electronic properties. First, the shadow band that is present in double layer and low T$_{c,max}$ single layer cuprates is absent in Tl2201. Recent studies have linked the shadow band to structural distortions in the lattice and the absence of these in Tl2201 may be a contributing factor in its T$_{c,max}$.Second, Tl2201's Fermi surface (FS) contains long straight parallel regions near the anti-node, while in Bi2201 the anti-nodal region is much more rounded. Since the size of the superconducting gap is largest in the anti-nodal region, differences in the band dispersion at the anti-node may play a significant role in the pairing and therefore affect the maximum transition temperature.
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Submitted 10 July, 2008; v1 submitted 23 June, 2008;
originally announced June 2008.
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Do** dependence of the superconducting gap in Tl_2Ba_2CuO_{6+delta} from heat transport
Authors:
D. G. Hawthorn,
S. Y. Li,
M. Sutherland,
Etienne Boaknin,
R. W. Hill,
C. Proust,
F. Ronning,
M. A. Tanatar,
Johnpierre Paglione,
Louis Taillefer,
D. Peets,
Ruixing Liang,
D. A. Bonn,
W. N. Hardy,
N. N. Kolesnikov
Abstract:
We present low-temperature thermal conductivity measurements on the cuprate Tl_2Ba_2CuO_{6+delta} throughout the overdoped regime. In the T -> 0 limit, the thermal conductivity due to d-wave nodal quasiparticles provides a bulk measurement of the superconducting gap, Delta. We find Delta to decrease with increasing do**, with a magnitude consistent with spectroscopic measurements (photoemissio…
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We present low-temperature thermal conductivity measurements on the cuprate Tl_2Ba_2CuO_{6+delta} throughout the overdoped regime. In the T -> 0 limit, the thermal conductivity due to d-wave nodal quasiparticles provides a bulk measurement of the superconducting gap, Delta. We find Delta to decrease with increasing do**, with a magnitude consistent with spectroscopic measurements (photoemission and tunneling). This argues for a pure and simple d-wave superconducting state in the overdoped region of the phase diagram, which appears to extend into the underdoped regime down to a hole concentration of 0.1 hole/Cu. As hole concentration is decreased, the gap-to-Tc ratio increases, showing that the suppression of the superconducting transition temperature Tc (relative to the gap) begins in the overdoped regime.
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Submitted 1 April, 2007; v1 submitted 10 February, 2005;
originally announced February 2005.
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Exponential Basis in Two-Sided Variational Estimates of Energy for Three-Body Systems
Authors:
A. G. Donchev,
N. N. Kolesnikov,
V. I. Tarasov
Abstract:
By the use of the variational method with exponential trial functions the upper and lower bounds of energy are calculated for a number of non-relativistic three-body Coulomb and nuclear systems. The formulas for calculation of upper and lower bounds for exponential basis are given, the lower bounds for great part of systems were calculated for the first time. By comparison of calculations for di…
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By the use of the variational method with exponential trial functions the upper and lower bounds of energy are calculated for a number of non-relativistic three-body Coulomb and nuclear systems. The formulas for calculation of upper and lower bounds for exponential basis are given, the lower bounds for great part of systems were calculated for the first time. By comparison of calculations for different bases the efficiency of exponential trial functions and their universality in respect to masses of particles and interaction are demonstrated. The advantage of exponential basis manifests mostly evident for the systems with comparable masses, though its use in one-center and two-center problems is justified too. For effective solution of two-center problem a carcass modification of the trial function is proposed. The stability of various three-particle Coulomb systems is analyzed.
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Submitted 18 March, 2002; v1 submitted 14 March, 2002;
originally announced March 2002.
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Magnetic Resonant Mode in the Single-Layer High Temperature Superconductor Tl$_2$Ba$_2$Cu$_{6+δ}$
Authors:
H. He,
P. Bourges,
Y. Sidis,
C. Ulrich,
L. P. Regnault,
S. Pailhes,
N. S. Berzigiarova,
N. N. Kolesnikov,
B. Keimer
Abstract:
An unusual spin excitation mode observed by neutron scattering has inspired numerous theoretical studies of the interplay between charged quasiparticles and collective spin excitations in the copper oxide high temperature superconductors. The mode has thus far only been observed in materials with crystal structures consisting of copper oxide bilayers, and it is notably absent in the single-layer…
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An unusual spin excitation mode observed by neutron scattering has inspired numerous theoretical studies of the interplay between charged quasiparticles and collective spin excitations in the copper oxide high temperature superconductors. The mode has thus far only been observed in materials with crystal structures consisting of copper oxide bilayers, and it is notably absent in the single-layer compound La$_{2-x}$Sr$_{x}$CuO$_{4+δ}$. Neutron scattering data now show that the mode is present in Tl$_2$Ba$_2$Cu$_{6+δ}$, a single-layer compound with T$_c$ $\sim$ 90 K, thus demonstrating that it is a generic feature of the copper oxide superconductors, independent of the layer sequence. This restricts the theoretical models for the origin of the resonant mode and its role in the mechanism of high temperature superconductivity.
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Submitted 15 January, 2002;
originally announced January 2002.
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Raman spectra of MgB2 at high pressure and topological electronic transition
Authors:
K. P. Meletov,
J. Arvanitidis,
M. P. Kulakov,
N. N. Kolesnikov,
G. A. Kourouklis
Abstract:
Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency s…
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Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ~ 5GPa exhibits a change in the slope as well as a "hysteresis" effect in the frequency vs. pressure behavior. These singularities in the E2g mode behavior under pressure support the suggestion that MgB2 may undergo a pressure-induced topological electronic transition.
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Submitted 24 October, 2001;
originally announced October 2001.
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Synthesis of MgB2 from elements
Authors:
N. N. Kolesnikov,
M. P. Kulakov
Abstract:
Superconducting at 40 K MgB2 -samples were obtained by direct reaction from elements in molybdenum crucibles under argon pressure. Pressure allows to provide annealing at temperature up to 1400oC, that resulting in rise of Tc and compactness of the ceramics, suggesting that there is a homogeneity range of composition for the compound.
Superconducting at 40 K MgB2 -samples were obtained by direct reaction from elements in molybdenum crucibles under argon pressure. Pressure allows to provide annealing at temperature up to 1400oC, that resulting in rise of Tc and compactness of the ceramics, suggesting that there is a homogeneity range of composition for the compound.
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Submitted 8 July, 2001;
originally announced July 2001.
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Crystal Growth and Characterization of Doped CZT Crystals
Authors:
N. N. Kolesnikov,
S. P. Vesnovskii,
R. B. James,
N. S. Berzigiarova,
D. L. Alov,
A. G. Zvenigorodskii
Abstract:
Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The do** was carried out by three different…
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Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The do** was carried out by three different ways: 1) by adding of the pure metals during growth runs; 2) by adding of the tellurides of the metals during growth runs; or 3) by inserting of the metal tellurides during synthesis of the starting CZT material. Some of the growth process parameters were also varied. The as-grown CZT ingots had diameters of either 15 or 38 mm. The influence of the do** on CZT properties, particularly the conductivity type and specific electrical resistivity, will be discussed. Energy spectra from alpha particles (U-233, Ra-226, and U-233+Pu-239+Pu-238) and from different gamma sources (Cs-137, Co-60, Co-57, Am-241) will be reported.
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Submitted 4 July, 2001;
originally announced July 2001.
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Characteristic features of the temperature dependence of the surface impedance in polycrystalline MgB$_2$ samples
Authors:
Yu. A. Nefyodov,
M. R. Trunin,
A. F. Shevchun,
D. V. Shovkun,
N. N. Kolesnikov,
M. P. Kulakov,
A. Agliolo Gallitto,
S. Fricano
Abstract:
The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density…
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The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density with roughness sizes not more than 0.1 $μ$m. For such samples extrapolation $T\to 0$ of the linear at $T<T_c/2$ temperature dependences $λ_L(T)=X_s(T)/ωμ_0$ and $R_s(T)$ results in values of the London penetration depth $λ_L(0)\approx 600$ Åand residual surface resistance $R_{res}\approx 0.8$ m$Ω$. In the entire temperature range the dependences $R_s(T)$ and $X_s(T)$ are well described by the modified two-fluid model.
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Submitted 5 February, 2002; v1 submitted 3 July, 2001;
originally announced July 2001.
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Effect of pressure on the superconducting Tc of MgB2
Authors:
V. G. Tissen,
M. V. Nefedova,
N. N. Kolesnikov,
M. P. Kulakov
Abstract:
Measurements of the superconducting transition temperature Tc have been performed by the inductive method on MgB2 at pressures up to 28 GPa. Tc decreases with applied pressure, exhibiting a cusp at about 9 GPa. We interpret the appearance of this anomaly in the Tc(P) dependence as a result of the pressure-induced electronic transition. Recent band-structure calculations for MgB2 give some suppor…
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Measurements of the superconducting transition temperature Tc have been performed by the inductive method on MgB2 at pressures up to 28 GPa. Tc decreases with applied pressure, exhibiting a cusp at about 9 GPa. We interpret the appearance of this anomaly in the Tc(P) dependence as a result of the pressure-induced electronic transition. Recent band-structure calculations for MgB2 give some support for such an explanation.
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Submitted 28 May, 2001; v1 submitted 24 May, 2001;
originally announced May 2001.
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Systematics of c-axis Phonons in the Thallium and Bismuth Based Cuprate Superconductors
Authors:
A. A. Tsvetkov,
D. Dulic,
D. van der Marel,
A. Damascelli,
G. A. Kaljushnaia,
J. I. Gorina,
N. N. Senturina,
N. N. Kolesnikov,
Z. F. Ren,
J. H. Wang,
A. A. Menovsky,
T. T. M. Palstra
Abstract:
We present grazing incidence reflectivity measurements in the far infrared region at temperatures above and below Tc for a series of thallium (Tl2Ba2CuO6, Tl2Ba2CaCu2O8) and bismuth (Bi2Sr2CuO6, Bi2Sr2CaCu2O8, and Bi(2-x)Pb(x)Sr2CaCu2O8) based cuprate superconductors. From the spectra, which are dominated by the c-axis phonons, longitudinal frequencies (LO) are directly obtained. The reflectivit…
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We present grazing incidence reflectivity measurements in the far infrared region at temperatures above and below Tc for a series of thallium (Tl2Ba2CuO6, Tl2Ba2CaCu2O8) and bismuth (Bi2Sr2CuO6, Bi2Sr2CaCu2O8, and Bi(2-x)Pb(x)Sr2CaCu2O8) based cuprate superconductors. From the spectra, which are dominated by the c-axis phonons, longitudinal frequencies (LO) are directly obtained. The reflectivity curves are well fitted by a series of Lorentz oscillators. In this way the transverse (TO) phonon frequencies were accurately determined. On the basis of the comparative study of the Bi and Tl based cuprates with different number of CuO2 layers per unit cell, we suggest modifications of the assignment of the main oxygen modes. We compare the LO frequencies in Bi2Sr2CaCu2O8 and Tl2Ba2Ca2Cu3O10 obtained from intrinsic Josephson junction characteristics with our measurements, and explain the discrepancy in LO frequencies obtained by the two different methods.
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Submitted 13 June, 1999;
originally announced June 1999.
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Electronic Raman scattering in Tl2Ba2CuO6+x: symmetry of the order parameter, oxygen do** effects, and normal state scattering
Authors:
L. V. Gasparov,
P. Lemmens,
N. N. Kolesnikov,
G. Guntherodt
Abstract:
Single crystals of the optimally doped, moderately and strongly overdoped high temperature superconductor Tl2Ba2CuO6+x (Tl-2201) with Tc=80, 56 and 30K, respectively, have been investigated by polarized Raman scattering. By taking the peak position of the B_1g component of electronic Raman scattering as 2Delta_0 we found that the reduced gap value (2Delta_0/k_BT_c) strongly decreases with increa…
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Single crystals of the optimally doped, moderately and strongly overdoped high temperature superconductor Tl2Ba2CuO6+x (Tl-2201) with Tc=80, 56 and 30K, respectively, have been investigated by polarized Raman scattering. By taking the peak position of the B_1g component of electronic Raman scattering as 2Delta_0 we found that the reduced gap value (2Delta_0/k_BT_c) strongly decreases with increasing do**. The behavior of the low frequency scattering for the B_1g and B_2g scattering components is similar for optimally doped and overdoped crystals and can be described by a w^3 - and w -law, respectively, which is consistent with a d-wave symmetry of the order parameter. In contrast to the optimally doped Tl-2201 in both, moderately and strongly overdoped Tl-2201, the relative (compared to the B_1g) intensity of the A_1g scattering component is suppressed. We suggest that the van Hove singularity is responsible for the observed changes of Raman intensity and reduced gap value with do**. Electronic Raman scattering in the normal state is discussed in the context of the scattering from impurities and compared to the existing infrared data. The scattering rate evaluated from the Raman measurements is smaller for the overdoped samples, compared to the moderately overdoped samples.
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Submitted 10 September, 1998;
originally announced September 1998.
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Electronic Raman-scattering study of low-energy excitations in single and double CuO_2-layer Tl-Ba-(Ca)-Cu-O superconductors
Authors:
Moonsoo Kang,
G. Blumberg,
M. V. Klein,
N. N. Kolesnikov
Abstract:
Low energy Raman continuum and the redistribution of the continuum to a peak (2Δ-peak) in the superconducting state have been studied in Tl-Ba-(Ca)-Cu-O superconductors with single (Tl-2201) and double (Tl-2212) CuO_2 layer. The 2Δ/k_BT_c ratios in A_1g and B_1g symmetries are larger for Tl-2212 than for Tl-2201. The B_1g/A_1g gap ratio is also larger in Tl-2212. The A_1g intensities of the cont…
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Low energy Raman continuum and the redistribution of the continuum to a peak (2Δ-peak) in the superconducting state have been studied in Tl-Ba-(Ca)-Cu-O superconductors with single (Tl-2201) and double (Tl-2212) CuO_2 layer. The 2Δ/k_BT_c ratios in A_1g and B_1g symmetries are larger for Tl-2212 than for Tl-2201. The B_1g/A_1g gap ratio is also larger in Tl-2212. The A_1g intensities of the continuum and the 2Δ-peak are significantly weaker than the B_1g intensities in Tl-2201, but are comparable in Tl-2212. This shows that the Coulomb screening is much stronger in Tl-2201.
The change from Tl-2201 to Tl-2212 of the normalized A_1g 2Δ-peak intensity is identical within experimental error to that of normalized A_1g continuum intensity. This suggests that the excitations forming the 2Δ-peak and the continuum couple to light by the same mechanism.
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Submitted 11 November, 1997;
originally announced November 1997.
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Electronic Raman scattering in the single-CuO2 layered superconductor Tl2Ba2CuO6+x
Authors:
L. V. Gasparov,
P. Lemmens,
M. Brinkmann,
N. N. Kolesnikov,
G. Guntherodt
Abstract:
Electronic Raman scattering in Tl-2201 has been investigated in order to test whether the scattering cross-section in high temperature superconductors depends on the number of CuO2-planes, i.e. sheets or specific details of the Fermi surface. The experimental data are in qualitative agreement with the calculations of Devereaux and Einzel based on the dx^2-y^2-wave symmetry of the order parameter…
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Electronic Raman scattering in Tl-2201 has been investigated in order to test whether the scattering cross-section in high temperature superconductors depends on the number of CuO2-planes, i.e. sheets or specific details of the Fermi surface. The experimental data are in qualitative agreement with the calculations of Devereaux and Einzel based on the dx^2-y^2-wave symmetry of the order parameter used in the description of the Raman scattering cross section.
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Submitted 24 September, 1996;
originally announced September 1996.
