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Multi-Amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy
Authors:
Kenneth Lin,
Armin Karcher,
Julien Guy,
Stephen E. Holland,
William F. Kolbe,
Peter Nugent,
Alex Drlica-Wagner
Abstract:
We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the seria…
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We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the DESI CCD controller, we report a read noise of 1.03 e- rms/pix at a speed of 26 $μ$s/pix with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be $>0.9995$ at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from $\sim$300--35,000 e- was also measured to be $\pm 2.5\%$. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate.
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Submitted 10 June, 2024;
originally announced June 2024.
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Quantum efficiency modeling for a thick back-illuminated astronomical CCD
Authors:
D. E. Groom,
S. Haque,
S. E. Holland,
W. F. Kolbe
Abstract:
The quantum efficiency and reflectivity of thick, back-illuminated CCD's being fabricated at LBNL for astronomical applications are modeled and compared with experiment. The treatment differs from standard thin-film optics in that (a) absorption is permitted in any film, (b) the 200--500~$μ$m thick silicon substrate is considered as a thin film in order to observe the fringing behavior at long wav…
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The quantum efficiency and reflectivity of thick, back-illuminated CCD's being fabricated at LBNL for astronomical applications are modeled and compared with experiment. The treatment differs from standard thin-film optics in that (a) absorption is permitted in any film, (b) the 200--500~$μ$m thick silicon substrate is considered as a thin film in order to observe the fringing behavior at long wavelengths, and (c) by using approximate boundary conditions, absorption in the surface films is separated from absorption in the substrate. For the quantum efficiency measurements the CCD's are normally operated as CCD's, usually at $T = -140^\circ$C, and at higher temperatures as photodiodes. They are mounted on mechanical substrates. Reflectivity is measured on air-backed wafer samples at room temperature. The agreement between model expectation and quantum efficiency measurement is in general satisfactory.
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Submitted 9 August, 2017;
originally announced August 2017.
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Physics of Fully Depleted CCDs
Authors:
S. E. Holland,
C. J. Bebek,
W. F. Kolbe,
J. S. Lee
Abstract:
In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread function increases slightly with the signal level. This is explained by considering the effect on charge-carrier diffusion due to the reduction in the magnitude of the…
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In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread function increases slightly with the signal level. This is explained by considering the effect on charge-carrier diffusion due to the reduction in the magnitude of the channel potential as collected signal charge acts to partially neutralize the fixed charge in the depleted channel. The resulting reduced voltage drop across the carrier drift region decreases the vertical electric field and increases the carrier transit time. The second effect is the observation of low-level, concentric ring patterns seen in uniformly illuminated images. This effect is shown to be most likely due to lateral deflection of charge during the transit of the photogenerated carriers to the potential wells as a result of lateral electric fields. The lateral fields are a result of space charge in the fully depleted substrates arising from resistivity variations inherent to the growth of the high-resistivity silicon used to fabricate the CCDs.
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Submitted 24 March, 2014;
originally announced March 2014.
