Identification of exciton complexes in a charge-tuneable Janus WSeS monolayer
Authors:
Matthew S. G. Feuer,
Alejandro R. -P. Montblanch,
Mohammed Sayyad,
Carola M. Purser,
Ying Qin,
Evgeny M. Alexeev,
Alisson R. Cadore,
Barbara L. T. Rosa,
James Kerfoot,
Elaheh Mostaani,
Radosław Kalęba,
Pranvera Kolari,
Jan Kopaczek,
Kenji Watanabe,
Takashi Taniguchi,
Andrea C. Ferrari,
Dhiren M. Kara,
Sefaattin Tongay,
Mete Atatüre
Abstract:
Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photolumine…
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Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>15 meV) spectra obfuscating their excitonic origin. Here, we identify the neutral, and negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayer with $\sim 6$ meV optical linewidth. We combine a recently developed synthesis technique, with the integration of Janus monolayers into vertical heterostructures, allowing do** control. Further, magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. This work provides the foundation for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and photo-voltaic energy harvesting, which requires efficient creation of long-lived excitons and integration into vertical heterostructures.
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Submitted 13 October, 2022;
originally announced October 2022.
