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Spin-filter tunnel junction with matched Fermi surfaces
Authors:
T. Harada,
I. Ohkubo,
M. Lippmaa,
Y. Sakurai,
Y. Matsumoto,
S. Muto,
H. Koinuma,
M. Oshima
Abstract:
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target…
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Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.
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Submitted 2 August, 2012; v1 submitted 23 July, 2012;
originally announced July 2012.
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Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution
Authors:
T. Harada,
I. Ohkubo,
M. Lippmaa,
Y. Matsumoto,
M. Sumiya,
H. Koinuma,
M. Oshima
Abstract:
Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 <= y <= 0.7) thin films were epitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsed laser deposition. To probe the ferromagnetic insulator state of hole-doped manganites, the Co content dependences of the structural, magnetic, and transport properties were studied. Variation of lattice constant by the substitution of Co ions…
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Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 <= y <= 0.7) thin films were epitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsed laser deposition. To probe the ferromagnetic insulator state of hole-doped manganites, the Co content dependences of the structural, magnetic, and transport properties were studied. Variation of lattice constant by the substitution of Co ions is well reproduced considering that divalent and trivalent Co ions substitute for Mn ions at the perovskite B-sites. For 0 <= y <= 0.3, the Curie temperature, saturation magnetization, and magnetoresistance increase with increasing Co content, retaining the insulating properties. Detailed analyses of transport and magnetic properties indicate the contribution of both double exchange and superexchange interactions to the appearance of the ferromagnetic insulating phase.
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Submitted 1 November, 2010; v1 submitted 25 August, 2010;
originally announced September 2010.
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Bulk-like d band of SrVO3 under a self-protective cap layer
Authors:
M. Takizawa,
M. Minohara,
H. Kumigashira,
D. Toyota,
M. Oshima,
H. Wadati,
T. Yoshida,
A. Fujimori,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
G. Sordi,
M. Rozenberg
Abstract:
We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the i…
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We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the incoherent part, which are reproduced by dynamical mean-field theory calculations and the spectral weight of the incoherent part is stronger within the Fermi surface.
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Submitted 13 June, 2008;
originally announced June 2008.
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In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations
Authors:
H. Wadati,
A. Maniwa,
A. Chikamatsu,
I. Ohkubo,
H. Kumigashira,
M. Oshima,
A. Fujimori,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with do**, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra,…
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We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with do**, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a do**-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.
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Submitted 17 August, 2007; v1 submitted 10 August, 2007;
originally announced August 2007.
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Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La$_{1-x}$Sr$_{x}$MnO$_{3}$
Authors:
A. Chikamatsu,
H. Wadati,
H. Kumigashira,
M. Oshima,
A. Fujimori,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi…
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We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level ($E_{F}$) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of $E_{F}$ for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.
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Submitted 4 May, 2007;
originally announced May 2007.
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Shifting donor-acceptor photoluminescence in N-doped ZnO
Authors:
Takayuki Makino,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki,
H. Koinuma
Abstract:
We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was exp…
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We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.
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Submitted 11 May, 2006;
originally announced May 2006.
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Hole Transport in p-Type ZnO
Authors:
Takayuki Makino,
Akira Ohtomo,
A. Tsukazaki,
M. Kawasaki,
H. Koinuma
Abstract:
A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential…
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A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.
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Submitted 10 May, 2006;
originally announced May 2006.
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Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
Authors:
M. Takizawa,
H. Wadati,
K. Tanaka,
M. Hashimoto,
T. Yoshida,
A. Fujimori,
A. Chikamtsu,
H. Kumigashira,
M. Oshima,
K. Shibuya,
T. Mihara,
T. Ohnishi,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
S. Okamoto,
A. J. Millis
Abstract:
We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 in…
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We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.
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Submitted 7 April, 2006;
originally announced April 2006.
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Effect of strong localization of doped holes in angle-resolved photoemission spectra of La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
M. Takizawa,
R. Hashimoto,
H. Kumigashira,
T. Yoshida,
T. Mizokawa,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level (…
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We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level ($E_F$) by $\sim 1$ eV compared with the calculation and to form a (pseudo)gap of $\sim 1$ eV at $E_F$. We attribute this observation to a strong localization effect of doped holes due to polaron formation.
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Submitted 13 March, 2006;
originally announced March 2006.
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Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3/SrTiO3/ La0.6Sr0.4MnO3 junctions
Authors:
H. Kumigashira,
A. Chikamatsu,
R. Hashimoto,
M. Oshima,
T. Ohnishi,
M. Lippmaa,
H. Wadati,
A. Fujimori,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have investigated the interfacial electronic structure of La0.6Sr0.4MnO3 (LSMO)/ SrTiO3 (STO)/ LSMO heterojunctions utilizing the elemental selectivity of photoemission spectroscopy. The Ti 2p core-level spectra clearly show Ti4+ states and do not exhibit any indication of Ti3+ states in TiO2 layers irrespective of a different kind of adjacent atomic layer with different chemical carrier conc…
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We have investigated the interfacial electronic structure of La0.6Sr0.4MnO3 (LSMO)/ SrTiO3 (STO)/ LSMO heterojunctions utilizing the elemental selectivity of photoemission spectroscopy. The Ti 2p core-level spectra clearly show Ti4+ states and do not exhibit any indication of Ti3+ states in TiO2 layers irrespective of a different kind of adjacent atomic layer with different chemical carrier concentration. This result indicates that the Ti ions in the TiO2 atomic layers preserve their tetravalent states even in the vicinity of the valence-mismatched interface between LSMO and STO, reflecting chemical stability of the Ti4+ states.
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Submitted 19 October, 2005;
originally announced October 2005.
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Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga
Authors:
T. Makino,
Y. Segawa,
S. Yoshida,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki,
H. Koinuma
Abstract:
Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random…
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Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.
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Submitted 7 October, 2005;
originally announced October 2005.
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The band structure and Fermi surface of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ thin films studied by in-situ angle-resolved photoemission spectroscopy
Authors:
A. Chikamatsu,
H. Wadati,
H. Kumigashira,
M. Oshima,
A. Fujimori,
N. Hamada,
T. Ohnishi,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an in situ angle-resolved photoemission spectroscopy (ARPES) on single-crystal surfaces of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ (LSMO) thin films grown on SrTiO$_{3}$ (001) substrates by laser molecular beam epitaxy, and investigated the electronic structure near the Fermi level ($E_{F}$). The experimental results were compared with the band-structure calculation based on LDA + $U$. T…
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We have performed an in situ angle-resolved photoemission spectroscopy (ARPES) on single-crystal surfaces of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ (LSMO) thin films grown on SrTiO$_{3}$ (001) substrates by laser molecular beam epitaxy, and investigated the electronic structure near the Fermi level ($E_{F}$). The experimental results were compared with the band-structure calculation based on LDA + $U$. The band structure of LSMO thin films consists of several highly dispersive O 2$p$ derived bands in the binding energy range of 2.0 - 6.0 eV and Mn 3$d$ derived bands near $E_{F}$. ARPES spectra around the $Gamma$ point show a dispersive band near $E_{F}$ indicative of an electron pocket centered at the $Gamma$ point, although it was not so clearly resolved as an electronlike pocket due to the suppression of spectral weight in the vicinity of $E_{F}$. Compared with the band-structure calculation, the observed conduction band is assigned to the Mn 3$de_{g}$ majority-spin band responsible for the half-metallic nature of LSMO. We have found that the estimated size of the Fermi surface is consistent with the prediction of the band-structure calculation, while the band width becomes significantly narrower than the calculation. Also, the intensity near $E_{F}$ is strongly reduced. The origin of these discrepancies between the experiment and the calculation is discussed.
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Submitted 15 March, 2005;
originally announced March 2005.
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Manifestation of Correlation Effects in the photoemission spectra of Ca$_{1-x}$Sr$_x$RuO$_3$
Authors:
M. Takizawa,
D. Toyota,
H. Wadati,
A. Chikamatsu,
H. Kumigashira,
A. Fujimori,
M. Oshima,
Z. Fang,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic d…
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We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic distortion. We propose that, while the Ru 4d one-electron bandwidth does not change with $x$, the distortion and hence the splitting of the $t_{2\text{g}}$ band effectively increases electron correlation strength. Although strong mass enhancement is found in the electronic specific heat data, the coherent part remains wide, suggesting enhanced band narrowing only in the vicinity of {\it E$_{F}$}.
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Submitted 27 December, 2004;
originally announced December 2004.
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Room-temperature stimulated emission from ZnO multiple quantum wells grown on lattice-matched substrates
Authors:
T. Makino,
Y. Segawa,
M. Kawasaki,
H. Koinuma
Abstract:
The optical properties of ZnO quantum wells, which have potential application of short-wavelength semiconductor laser utilizing a high-density excitonic effect, were investigated. Stimulated emission of excitons was observed at temperatures well above room temperature due to the adoption of the lattice-matched substrates. The mechanism of stimulated emission from ZnO quantum wells is discussed i…
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The optical properties of ZnO quantum wells, which have potential application of short-wavelength semiconductor laser utilizing a high-density excitonic effect, were investigated. Stimulated emission of excitons was observed at temperatures well above room temperature due to the adoption of the lattice-matched substrates. The mechanism of stimulated emission from ZnO quantum wells is discussed in this chapter.
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Submitted 11 December, 2004; v1 submitted 9 December, 2004;
originally announced December 2004.
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Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
R. Hashimoto,
M. Takizawa,
H. Kumigashira,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra…
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We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra with spectral weight transfer over a wide energy range of $\sim 5$ eV. Above $T_{CD}$ the intensity at the Fermi level ($E_F$) was relatively high compared to that below $T_{CD}$ but still much lower than that in conventional metals. We also found a similar temperature dependence for $x=0.4$, and to a lesser extent for $x=0.2$. These observations suggest that a local charge disproportionation occurs not only in the $x=0.67$ sample below $T_{CD}$ but also over a wider temperature and composition range in LSFO. This implies that the tendency toward charge disproportionation may be the origin of the unusually wide insulating region of the LSFO phase diagram.
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Submitted 8 October, 2004;
originally announced October 2004.
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Optical Properties of Excitons in ZnO-based Quantum Well Heterostructures
Authors:
T. Makino,
Y. Segawa,
M. Kawasaki,
H. Koinuma
Abstract:
Recently the developments in the field of II-VI-oxides have been spectacular. Various epitaxial methods has been used to grow epitaxial ZnO layers. Not only epilayers but also sufficiently good-quality multiple quantum wells (MQWs) have also been grown by laser molecular-beam epitaxy (laser-MBE). We discuss mainly the experimental aspect of the optical properties of excitons in ZnO-based MQW het…
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Recently the developments in the field of II-VI-oxides have been spectacular. Various epitaxial methods has been used to grow epitaxial ZnO layers. Not only epilayers but also sufficiently good-quality multiple quantum wells (MQWs) have also been grown by laser molecular-beam epitaxy (laser-MBE). We discuss mainly the experimental aspect of the optical properties of excitons in ZnO-based MQW heterostructures. Systematic temperature-dependent studies of optical absorption and photoluminescence in these MQWs were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Based on these data, the localization of excitons, the influence of exciton-phonon interaction, and quantum-confined Stark effects are discussed.
The optical spectra of dense excitonic systems are shown to be determined mainly by the interaction process between excitons and biexcitons. The high-density excitonic effects play a role for the observation of room-temperature stimulated emission in the ZnO MQWs. The binding energies of exciton and biexciton are enhanced from the bulk values, as a result of quantum-confinement effects.
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Submitted 10 October, 2004; v1 submitted 5 October, 2004;
originally announced October 2004.
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In situ photoemission study on atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ thin films: Composition dependence of the electronic structure
Authors:
K. Horiba,
A. Chikamatsu,
H. Kumigashira,
M. Oshima,
N. Nakagawa,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-do** level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The {\it in situ} PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reve…
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We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-do** level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The {\it in situ} PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reveal their intrinsic electronic structures, especially the structure near the Fermi level ($E_F$). We have found that overall features of valence band as well as the core levels monotonically shifted toward lower binding energy as $x$ was increased, indicating the rigid-band like behavior of underlying electronic structure of LSMO thin films. The peak nearest to $E_F$ due to the $e_g$ orbital is also found to move toward $E_F$ in a rigid-band manner, while the peak intensity decreases with increasing $x$. The loss of spectral weight with $x$ in the occupied density of states was compensated by simultaneous increment of the shoulder structure in O 1$s$ XAS spectra, suggesting the existence of a pseudogap, that is depression in spectral weight at $E_F$, for all metallic compositions. These results indicate that the simple rigid-band model does not describe the electronic structure near $E_F$ of LSMO and that the spectral weight transfer from below to above $E_F$ across the gap dominates the spectral changes with $x$ in LSMO thin films.
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Submitted 14 June, 2004;
originally announced June 2004.
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Nature of Well-Screened State in Hard X-ray Mn 2$p$ Core-Level Photoemission of La$_{1-x}$Sr$_x$MnO$_3$ Films
Authors:
K. Horiba,
M. Taguchi,
A. Chainani,
Y. Takata,
E. Ikenaga,
H. Namatame,
M. Taniguchi,
M. Awaji,
A. Takeuchi,
D. Miwa,
Y. Nishino,
K. Tamasaku,
T. Ishikawa,
H. Kumigashira,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
K. Kobayashi,
S. Shin
Abstract:
Using hard x-ray (HX ; $hν$ = 5.95 keV) synchrotron photoemission spectroscopy (PES), we study the intrinsic electronic structure of La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films. Comparison of Mn 2$p$ core-levels with Soft x-ray (SX ; $hν$ $\sim$ 1000 eV) -PES shows a clear additional well-screened feature only in HX-PES. Take-off-angle dependent data indicate its bulk ($\ge$ 20 Å) character. The d…
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Using hard x-ray (HX ; $hν$ = 5.95 keV) synchrotron photoemission spectroscopy (PES), we study the intrinsic electronic structure of La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films. Comparison of Mn 2$p$ core-levels with Soft x-ray (SX ; $hν$ $\sim$ 1000 eV) -PES shows a clear additional well-screened feature only in HX-PES. Take-off-angle dependent data indicate its bulk ($\ge$ 20 Å) character. The do** and temperature dependence track the ferromagnetism and metallicity of the LSMO series. Cluster model calculations including charge transfer from do** induced states show good agreement, confirming this picture of bulk properties reflected in Mn 2$p$ core-levels using HX-PES.
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Submitted 21 October, 2004; v1 submitted 19 May, 2004;
originally announced May 2004.
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Hole-do**-induced changes in the electronic structure of La$_{1-x}$Sr$_x$FeO$_3$ : soft x-ray photoemission and absorption study of epitaxial thin films
Authors:
H. Wadati,
D. Kobayashi,
H. Kumigashira,
K. Okazaki,
T. Mizokawa,
A. Fujimori,
K. Horiba,
M. Oshima,
N. Hamada,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have studied the electronic structure of epitaxially grown thin films of La$_{1-x}$Sr$_x$FeO$_3$ by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2$p$ and valence-band PES spectra and the O $1s$ XAS spectra of LaFeO$_3$ have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the sate…
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We have studied the electronic structure of epitaxially grown thin films of La$_{1-x}$Sr$_x$FeO$_3$ by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2$p$ and valence-band PES spectra and the O $1s$ XAS spectra of LaFeO$_3$ have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the satellite structure, by band-structure calculation.From the shift of the binding energies of core levels, the chemical potential was found to be shifted downward as $x$ was increased. Among the three peaks in the valence-band spectra of La$_{1-x}$Sr$_x$FeO$_3$, the peak nearest to the Fermi level ($E_F$), due to the ``$e_{g}$ band'', was found to move toward $E_F$ and became weaker as $x$ was increased, whereas the intensity of the peak just above $E_F$ in the O $1s$ XAS spectra increased with $x$. The gap or pseudogap at $E_F$ was seen for all values of $x$. These results indicate that changes in the spectral line shape around $E_F$ are dominated by spectral weight transfer from below to above $E_F$ across the gap and are therefore highly non-rigid-band-like.
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Submitted 19 April, 2004;
originally announced April 2004.
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Modeling and simulation of polycrystalline ZnO thin-film transistors
Authors:
Faruque M. Hossain,
J. Nishii,
S. Takagi,
A. Ohtomo,
T. Fukumura,
H. Fujioka,
H. Ohno,
H. Koinuma,
M. Kawasaki
Abstract:
Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dens…
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Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.
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Submitted 26 August, 2003;
originally announced August 2003.
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Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co
Authors:
H. Toyosaki,
T. Fukumura,
Y. Yamada,
K. Nakajima,
T. Chikyow,
T. Hasegawa,
H. Koinuma,
M. Kawasaki
Abstract:
A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibili…
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A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibilities of spintronics devices operable at room temperature.
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Submitted 31 July, 2003;
originally announced July 2003.
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Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics
Authors:
T. Fukumura,
Y. Yamada,
H. Toyosaki,
T. Hasegawa,
H. Koinuma,
M. Kawasaki
Abstract:
A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are desc…
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A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devices are also given.
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Submitted 19 May, 2003;
originally announced May 2003.
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Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co
Authors:
T. Fukumura,
Y. Yamada,
K. Tamura,
K. Nakajima,
T. Aoyama,
A. Tsukazaki,
M. Sumiya,
S. Fuke,
Y. Segawa,
T. Chikyow,
T. Hasegawa,
H. Koinuma,
M. Kawasaki
Abstract:
Magneto-optical spectroscopy of a transparent ferromagnetic semiconductor, anatase TiO2 doped with Co, is carried out at room temperature. A large magneto-optical response with ferromagnetic field dependence is observed throughout from ultraviolet to visible range and increases with increasing Co content or carrier concentration. The magnitude of magnetic circular dichroism (MCD) per unit thickn…
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Magneto-optical spectroscopy of a transparent ferromagnetic semiconductor, anatase TiO2 doped with Co, is carried out at room temperature. A large magneto-optical response with ferromagnetic field dependence is observed throughout from ultraviolet to visible range and increases with increasing Co content or carrier concentration. The magnitude of magnetic circular dichroism (MCD) per unit thickness has a peak around the absorption edge such a huge value of ~10400 degree/cm at 3.57 eV for a 10 mol% Co-doped specimen. Although the results are not sufficient to prove that the ferromagnetism is in the ordinary framework of diluted magnetic semiconductors, the coexistence of Co impurity and mobile carrier is shown to transform the band structure of host TiO2 to generate ferromagnetism.
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Submitted 16 December, 2002;
originally announced December 2002.
