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Wedge-type engineered analog SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$-Memristive Devices for Neuromorphic Applications
Authors:
Rouven Lamprecht,
Luca Vialetto,
Tobias Gergs,
Finn Zahari,
Richard Marquardt,
Jan Trieschmann,
Hermann Kohlstedt
Abstract:
This study presents a comprehensive examination of the development of TiN/SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$/TiN memristive devices, engineered for neuromorphic applications using a wedge-type deposition technique and Monte Carlo simulations. Identifying critical parameters for the desired device characteristics can be challenging with conventional trial-and-error approaches, which often obscure…
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This study presents a comprehensive examination of the development of TiN/SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$/TiN memristive devices, engineered for neuromorphic applications using a wedge-type deposition technique and Monte Carlo simulations. Identifying critical parameters for the desired device characteristics can be challenging with conventional trial-and-error approaches, which often obscure the effects of varying layer compositions. By employing an \textit{off-center} thermal evaporation method, we created a thickness gradient of SiO$_\mathrm{x}$ and Cu on a 4-inch wafer, facilitating detailed resistance map analysis through semiautomatic measurements. This allows to investigate in detail the influence of layer composition and thickness on single wafers, thus kee** every other process condition constant. Combining experimental data with simulations provides a precise understanding of the layer thickness distribution and its impact on device performance. Optimizing the SiO$_\mathrm{x}$ layers to be below 12.5 nm, coupled with a discontinuous Cu layer with a nominal thickness lower than 0.6 nm, exhibits analog switching properties with an R$_\mathrm{on}$/R$_\mathrm{off}$ ratio of $>$100, suitable for neuromorphic applications, whereas R $\times$ A analysis shows no clear signs of filamentary switching. Our findings highlight the significant role of carefully choosing the SiO$_\mathrm{x}$ and Cu thickness in determining the switching behavior and provide insights that could lead to the more systematic development of high-performance analog switching components for bio-inspired computing systems.
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Submitted 27 June, 2024;
originally announced June 2024.
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Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N
Authors:
Niklas Wolff,
Georg Schoenweger,
Isabel Streicher,
Md Redwanul Islam,
Nils Braun,
Patrik Stranak,
Lutz Kirste,
Mario Prescher,
Andriy Lotnyk,
Hermann Kohlstedt,
Stefano Leone,
Lorenz Kienle,
Simon Fichtner
Abstract:
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic metho…
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Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy served to proof the ferroelectric polarization inversion on unit cell level. The single crystal quality further allowed to image the large-scale domain pattern of a wurtzite-type ferroelectric for the first time, revealing a predominantly cone-like domain shape along the c-axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which could be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm was deduced, but which could potentially be atomically sharp. We are confident that these results will advance the commencing integration of wurtzite-type ferroelectrics to GaN as well as generally III-N based heterostructures and devices.
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Submitted 21 December, 2023;
originally announced December 2023.
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In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Authors:
Georg Schönweger,
Niklas Wolff,
Md Redwanul Islam,
Maike Gremmel,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on…
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Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of thinnest Al$_{1-x}$Sc$_x$N films on epitaxial templates, a significantly larger coercive field to breakdown field ratio is observed for Al$_{0.74}$Sc$_{0.26}$N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries within single nm-sized grains supports the theory of a gradual domain-wall motion limited switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.
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Submitted 6 April, 2023;
originally announced April 2023.
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Ultrathin AlScN for low-voltage driven ferroelectric-based devices
Authors:
Georg Schönweger,
Md Redwanul Islam,
Niklas Wolff,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an i…
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Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an in situ Pt cap** approach to avoid oxidation of the Al0.72Sc0.28N film surface. Structural characterization by X-ray diffraction and transmission electron microscopy reveals the established epitaxy. The thus obtained high-quality interfaces in combination with the in situ cap** is expected to facilitate ferroelectric switching of AlScN in the ultrathin regime. The analysis of the relative permittivity and coercive field dependence on the Al0.72Sc0.28N film thicknesses in the range of 100 nm down to 10 nm indicates only moderate scaling effects, suggesting that the critical thickness for ferroelectricity is not yet approached. Furthermore, the deposited layer stack demonstrates the possibility of including ultrathin ferroelectric AlScN into all-epitaxial GaN-based devices using sputter deposition techniques. Thus, our work highlights the integration and scaling potential of all-epitaxial ultrathin AlScN offering high storage density paired with low voltage operation desired for state of the art ferroelectric memory devices.
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Submitted 5 July, 2022;
originally announced July 2022.
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Matter & Mind Matter
Authors:
Tom Birkoben,
Hermann Kohlstedt
Abstract:
As a result of a hundred million years of evolution, living animals have adapted extremely well to their ecological niche. Such adaptation implies species-specific interactions with their immediate environment by processing sensory cues and responding with appropriate behavior. Understanding how living creatures perform pattern recognition and cognitive tasks is of particular importance for comput…
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As a result of a hundred million years of evolution, living animals have adapted extremely well to their ecological niche. Such adaptation implies species-specific interactions with their immediate environment by processing sensory cues and responding with appropriate behavior. Understanding how living creatures perform pattern recognition and cognitive tasks is of particular importance for computing architectures: by studying these information pathways refined over eons of evolution, researchers may be able to streamline the process of develo** more highly advanced, energy efficient autonomous systems. With the advent of novel electronic and ionic components along with a deeper understanding of information pathways in living species, a plethora of opportunities to develop completely novel information processing avenues are within reach. Here, we describe the basal information pathways in nervous systems, from the local neuron level to the entire nervous system network. The dual importance of local learning rules is addressed, from spike timing dependent plasticity at the neuron level to the interwoven morphological and dynamical mechanisms of the global network. Basal biological principles are highlighted, including phylogenies, ontogenesis, and homeostasis, with particular emphasis on network topology and dynamics. While in machine learning system training is performed on virgin networks without any a priori knowledge, the approach proposed here distinguishes itself unambiguously by employing growth mechanisms as a guideline to design novel computing architectures. Including fundamental biological information pathways that explore the spatiotemporal fundamentals of nervous systems has untapped potential for the development of entirely novel information processing systems. Finally, a benchmark for neuromorphic systems is suggested.
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Submitted 27 April, 2022;
originally announced April 2022.
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Stochastic behaviour of an interface-based memristive device
Authors:
Sahitya Yarragolla,
Torben Hemke,
Jan Trieschmann,
Finn Zahari,
Hermann Kohlstedt,
Thomas Mussenbrock
Abstract:
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of…
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A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behaviour observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behaviour, is modelled using the kinetic Cloud-In-a-Cell scheme. The calculated current-voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.
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Submitted 31 October, 2021;
originally announced November 2021.
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On the exceptional temperature stability of ferroelectric AlScN thin films
Authors:
MD Redwanul Islam,
Niklas Wolff,
Mohammed Yassine,
Georg Schönweger,
Björn Christian,
Hermann Kohlstedt,
Oliver Ambacher,
Fabian Lofink,
Lorenz Kienle,
Simon Fichtner
Abstract:
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of ferroelectric AlScN, low temperature has to be seen as a purely relative term, since its ferroelectric-to-paraelectric transition temperature is confirmed to surpa…
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Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of ferroelectric AlScN, low temperature has to be seen as a purely relative term, since its ferroelectric-to-paraelectric transition temperature is confirmed to surpass 1100°C and thus the transition temperature of virtually any other thin film ferroelectric. We arrived at this conclusion through investigating the structural stability of 0.4 - 2 $μ$m thick Al$_{0.73}$Sc$_{0.27}$N films grown on Mo bottom electrodes via in situ high-temperature X-ray diffraction and permittivity measurements. Our studies reveal the wurtzite-type structure of Al$_{0.73}$Sc$_{0.27}$N is conserved during the entire 1100°C annealing cycle, apparent through a constant c over a lattice parameter ratio. In situ permittivity measurements performed up to 1000°C strongly support this conclusion and include what could be the onset of a diverging permittivity only at the very upper end of the measurement interval. Our in situ measurements are well-supported by ex situ (scanning) transmission electron microscopy and polarization and capacity hysteresis measurements. These results confirm the structural stability on the sub-$μ$m scale next to the stability of the inscribed polarization during the complete 1100°C annealing treatment. Thus, AlScN is the first readily available thin film ferroelectric with a temperature stability that surpasses virtually all thermal budgets occurring in microtechnology, be it during fabrication or the lifetime of a device - even in harshest environments.
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Submitted 18 May, 2021;
originally announced May 2021.
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Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films
Authors:
Simon Fichtner,
Georg Schönweger,
Tom-Niklas Kreutzer,
Fabian Lofink,
Adrian Petraru,
Hermann Kohlstedt,
Bernhard Wagner
Abstract:
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited proc…
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The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm - as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.
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Submitted 12 October, 2020;
originally announced October 2020.
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Bifurcation without parameters in a chaotic system with a memristive element
Authors:
Tom Birkoben,
Moritz Drangmeister,
Finn Zahari,
Serhiy Yanchuk,
Philipp Hövel,
Hermann Kohlstedt
Abstract:
We investigate the effect of memory on a chaotic system experimentally and theoretically. For this purpose, we use Chua's oscillator as an electrical model system showing chaotic dynamics extended by a memory element in form of a double-barrier memristive device. The device consists of Au/NbO$_\text{x}$/Al$_\text{2}$O$_\text{3}$/Al/Nb layers and exhibits strong analog-type resistive changes depend…
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We investigate the effect of memory on a chaotic system experimentally and theoretically. For this purpose, we use Chua's oscillator as an electrical model system showing chaotic dynamics extended by a memory element in form of a double-barrier memristive device. The device consists of Au/NbO$_\text{x}$/Al$_\text{2}$O$_\text{3}$/Al/Nb layers and exhibits strong analog-type resistive changes depending on the history of the charge flow. In the extended system strong changes in the dynamics of chaotic oscillations are observable. The otherwise fluctuating amplitudes of the Chua system are disrupted by transient silent states. After develo** a model for Chua's oscillator with a memristive device, the numerical treatment reveals the underling dynamics as driven by the slow-fast dynamics of the memory element. Furthermore, the stabilizing and destabilizing dynamic bifurcations are identified that are passed by the system during its chaotic behavior.
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Submitted 6 June, 2019;
originally announced June 2019.
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Anticipation of digital patterns
Authors:
Karlheinz Ochs,
Martin Ziegler,
Eloy Hernandez-Guevara,
Enver Solan,
Marina Ignatov,
Mirko Hansen,
Mahal Singh Gill,
Hermann Kohlstedt
Abstract:
A memristive device is a novel passive device, which is essentially a resistor with memory. This device can be utilized for novel technical applications like neuromorphic computation. In this paper, we focus on anticipation - a capability of a system to decide how to react in an environment by predicting future states. Especially, we have designed an elementary memristive circuit for the anticipat…
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A memristive device is a novel passive device, which is essentially a resistor with memory. This device can be utilized for novel technical applications like neuromorphic computation. In this paper, we focus on anticipation - a capability of a system to decide how to react in an environment by predicting future states. Especially, we have designed an elementary memristive circuit for the anticipation of digital patterns, where this circuit is based on the capability of an amoeba to anticipate periodically occurring unipolar pulses. The resulting circuit has been verified by digital simulations and has been realized in hardware as well. For the practical realization, we have used an Ag-doped TiO2-x-based memristive device, which has been fabricated in planar capacitor structures on a silicon wafer. The functionality of the circuit is shown by simulations and measurements. Finally, the anticipation of information is demonstrated by using images, where the robustness of this anticipatory circuit against noise and faulty intermediate information is visualized.
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Submitted 1 June, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices
Authors:
Julian Strobel,
Mirko Hansen,
Sven Dirkmann,
Krishna Kanth Neelisetty,
Martin Ziegler,
Georg Haberfehlner,
Radian Popescu,
Gerald Kothleitner,
Venkata Sai Kiran Chakravadhanula,
Christian Kübel,
Hermann Kohlstedt,
Thomas Mussenbrock,
Lorenz Kienle
Abstract:
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidat…
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Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidation state of the metals as well as concentration and distribution of oxygen ions, have a major influence on electronic conduction, these factors were carefully analysed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the strong deviations between observed and originally sought layout, this study highlights the robustness in terms of structural deviations of the double barrier memristor device.
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Submitted 20 March, 2017;
originally announced March 2017.
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An Enhanced Lumped Element Electrical Model of a Double Barrier Memristive Device
Authors:
Enver Solan,
Sven Dirkmann,
Mirko Hansen,
Dietmar Schroeder,
Hermann Kohlstedt,
Martin Ziegler,
Thomas Mussenbrock,
Karlheinz Ochs
Abstract:
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabricatio…
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The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile.
Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters.
Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.
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Submitted 19 January, 2017;
originally announced January 2017.
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Tunable $\varphi$ Josephson Junction ratchet
Authors:
R. Menditto,
H. Sickinger,
M. Weides,
H. Kohlstedt,
D. Koelle,
R. Kleiner,
E. Goldobin
Abstract:
We demonstrate experimentally the operation of a deterministic Josephson ratchet with tunable asymmetry. The ratchet is based on a $\varphi$ Josephson junction with a ferromagnetic barrier operating in the underdamped regime. The system is probed also under the action of an additional dc current, which acts as a counter force trying to stop the ratchet. Under these conditions the ratchet works aga…
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We demonstrate experimentally the operation of a deterministic Josephson ratchet with tunable asymmetry. The ratchet is based on a $\varphi$ Josephson junction with a ferromagnetic barrier operating in the underdamped regime. The system is probed also under the action of an additional dc current, which acts as a counter force trying to stop the ratchet. Under these conditions the ratchet works against the counter force, thus producing a non-zero output power. Finally, we estimate the efficiency of the $\varphi$ Josephson junction ratchet.
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Submitted 26 July, 2016;
originally announced July 2016.
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The role of ion transport phenomena in memristive double barrier devices
Authors:
Sven Dirkmann,
Mirko Hansen,
Martin Ziegler,
Hermann Kohlstedt,
Thomas Mussenbrock
Abstract:
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al$_2$O$_3$/Nb$_{\text{x}}$O$_{\text{y}}$/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin Nb$_{\text{x}}$O$_{\text{y}}$ solid state electrolyte between an Al$_2$O$_3$ tunnel barrier and a semic…
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In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al$_2$O$_3$/Nb$_{\text{x}}$O$_{\text{y}}$/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin Nb$_{\text{x}}$O$_{\text{y}}$ solid state electrolyte between an Al$_2$O$_3$ tunnel barrier and a semiconductor metal interface at an Au electrode. It is shown that the device provides a number of interesting features for potential applications such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step. Therefore, it is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. However, the underlying physical mechanisms of the resistive switching are still not completely understood yet. To investigate the interplay between the current transport mechanisms and the inner atomistic device structure a lumped element circuit model is consistently coupled with 3D kinetic Monte Carlo model for the ion transport. The simulation results indicate that the drift of charged point defects within the Nb$_{\text{x}}$O$_{\text{y}}$ is the key factor for the resistive switching behavior. It is shown in detail that the diffusion of oxygen modifies the local electronic interface states resulting in a change of the interface properties of the double barrier device.
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Submitted 30 May, 2016; v1 submitted 27 May, 2016;
originally announced May 2016.
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Synchronization of two memristive coupled van der Pol oscillators
Authors:
M. Ignatov,
M. Hansen,
M. Ziegler,
H. Kohlstedt
Abstract:
The objective of this paper is to explore the possibility to couple two van der Pol (vdP) oscillators via a resistance-capacitance (RC) network comprising a Ag-TiOx-Al memristive device. The coupling was mediated by connecting the gate terminals of two programmable unijunction transistors (PUTs) through the network. In the high resistance state (HRS) the memresistance was in the order of MOhm lead…
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The objective of this paper is to explore the possibility to couple two van der Pol (vdP) oscillators via a resistance-capacitance (RC) network comprising a Ag-TiOx-Al memristive device. The coupling was mediated by connecting the gate terminals of two programmable unijunction transistors (PUTs) through the network. In the high resistance state (HRS) the memresistance was in the order of MOhm leading to two independent selfsustained oscillators characterized by the different frequencies f1 and f2 and no phase relation between the oscillations. After a few cycles and in dependency of the mediated pulse amplitude the memristive device switched to the low resistance state (LRS) and a frequency adaptation and phase locking was observed. The experimental results are underlined by theoretically considering a system of two coupled vdP equations. The presented neuromorphic circuitry conveys two essentials principle of interacting neuronal ensembles: synchronization and memory. The experiment may path the way to larger neuromorphic networks in which the coupling parameters can vary in time and strength and are realized by memristive devices.
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Submitted 15 November, 2015;
originally announced November 2015.
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Kinetic Simulation of Filament Growth Dynamics in Memristive Electrochemical Metallization Devices
Authors:
Sven Dirkmann,
Martin Ziegler,
Mirko Hansen,
Hermann Kohlstedt,
Jan Trieschmann,
Thomas Mussenbrock
Abstract:
In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO2/Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present result…
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In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO2/Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally, we observe an unexpected filament growth mode which is in contradiction to the widely acknowledged picture of filament growth, but consistent with recent experimental findings.
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Submitted 31 October, 2015; v1 submitted 1 September, 2015;
originally announced September 2015.
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The effect of normal metal layers in ferromagnetic Josephson junctions
Authors:
D. M. Heim,
N. G. Pugach,
M. Yu. Kupriyanov,
E. Goldobin,
D. Koelle,
R. Kleiner,
N. Ruppelt,
M. Weides,
H. Kohlstedt
Abstract:
Using the Usadel equation approach, we provide a compact formalism to calculate the critical current density of 21 different types of ferromagnetic (F) Josephson junctions containing insulating (I) and normal metal (N) layers in the weak link regions. In particular, we obtain that even a thin additional N layer may shift the 0-$π$ transitions to larger or smaller values of the thickness $d_F$ of t…
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Using the Usadel equation approach, we provide a compact formalism to calculate the critical current density of 21 different types of ferromagnetic (F) Josephson junctions containing insulating (I) and normal metal (N) layers in the weak link regions. In particular, we obtain that even a thin additional N layer may shift the 0-$π$ transitions to larger or smaller values of the thickness $d_F$ of the ferromagnet, depending on its conducting properties. For certain values of $d_F$, a 0-$π$ transition can even be achieved by changing only the N layer thickness. We use our model to fit experimental data of SIFS and SINFS tunnel junctions, where S is a superconducting electrode.
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Submitted 27 July, 2014; v1 submitted 2 October, 2013;
originally announced October 2013.
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Memory cell based on a $\varphi$ Josephson junction
Authors:
E. Goldobin,
H. Sickinger,
M. Weides,
N. Ruppelt,
H. Kohlstedt,
R. Kleiner,
D. Koelle
Abstract:
The $\varphi$ Josephson junction has a doubly degenerate ground state with the Josephson phases $\pm\varphi$. We demonstrate the use of such a $\varphi$ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay…
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The $\varphi$ Josephson junction has a doubly degenerate ground state with the Josephson phases $\pm\varphi$. We demonstrate the use of such a $\varphi$ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with Rapid Single Flux Quantum logic is possible.
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Submitted 7 June, 2013;
originally announced June 2013.
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Experimental evidence of a φ Josephson junction
Authors:
H. Sickinger,
A. Lipman,
M. Weides,
R. G. Mints,
H. Kohlstedt,
D. Koelle,
R. Kleiner,
E. Goldobin
Abstract:
We demonstrate experimentally the existence of Josephson junctions having a doubly degenerate ground state with an average Josephson phase ψ=\pmφ. The value of φ can be chosen by design in the interval 0<φ<π. The junctions used in our experiments are fabricated as 0-π Josephson junctions of moderate normalized length with asymmetric 0 and π regions. We show that (a) these φ Josephson junctions hav…
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We demonstrate experimentally the existence of Josephson junctions having a doubly degenerate ground state with an average Josephson phase ψ=\pmφ. The value of φ can be chosen by design in the interval 0<φ<π. The junctions used in our experiments are fabricated as 0-π Josephson junctions of moderate normalized length with asymmetric 0 and π regions. We show that (a) these φ Josephson junctions have two critical currents, corresponding to the escape of the phase ψ from -φ and +φ states; (b) the phase ψ can be set to a particular state by tuning an external magnetic field or (c) by using a proper bias current sweep sequence. The experimental observations are in agreement with previous theoretical predictions.
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Submitted 12 July, 2012;
originally announced July 2012.
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Ferromagnetic resonance in epitaxial films: Effects of lattice strains and voltage control via ferroelectric substrate
Authors:
N. A. Pertsev,
H. Kohlstedt,
R. Knoechel
Abstract:
The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microwave devices. Here we demonstrate theoretically that substrate-induced lattice strains may change the FMR frequency of an epitaxial ferromagnetic film dramatically, leading to ultralow and ultrahigh resonance frequencies…
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The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microwave devices. Here we demonstrate theoretically that substrate-induced lattice strains may change the FMR frequency of an epitaxial ferromagnetic film dramatically, leading to ultralow and ultrahigh resonance frequencies at room temperature. Remarkably, the FMR frequency varies with the epitaxial strain nonmonotonically, reaching minimum at a critical strain corresponding to the strain-induced spin reorientation transition. Furthermore, by coupling the ferromagnetic film to a ferroelectric substrate, it becomes possible to achieve an efficient voltage control of FMR parameters. In contrast to previous studies, we found that the tunability of FMR frequency varies with the applied electric field and strongly increases at critical field intensity. The revealed features open up wide opportunities for the development of advanced tunable magnetoelectric devices based on strained nanomagnets.
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Submitted 28 February, 2011;
originally announced February 2011.
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Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior
Authors:
Doo Seok Jeong,
Byung-ki Cheong,
Hermann Kohlstedt
Abstract:
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar s…
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We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.
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Submitted 23 February, 2011;
originally announced February 2011.
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Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer
Authors:
M. Weides,
U. Peralagu,
H. Kohlstedt,
J. Pfeiffer,
M. Kemmler,
C. Gürlich,
E. Goldobin,
D. Koelle,
R. Kleiner
Abstract:
We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current…
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We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.
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Submitted 15 July, 2010; v1 submitted 26 June, 2010;
originally announced June 2010.
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Interference patterns of multifacet 20x(0-pi-) Josephson junctions with ferromagnetic barrier
Authors:
S. Scharinger,
C. Gürlich,
R. G. Mints,
M. Weides,
H. Kohlstedt,
E. Goldobin,
D. Koelle,
R. Kleiner
Abstract:
We have realized multifacet Josephson junctions with periodically alternating critical current density (MJJs) using superconductor-insulator-ferromagnet-superconductor heterostructures. We show that anomalous features of critical current vs. applied magnetic field, observed also for other types of MJJs, are caused by a non-uniform flux density (parallel to the barrier) resulting from screening cu…
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We have realized multifacet Josephson junctions with periodically alternating critical current density (MJJs) using superconductor-insulator-ferromagnet-superconductor heterostructures. We show that anomalous features of critical current vs. applied magnetic field, observed also for other types of MJJs, are caused by a non-uniform flux density (parallel to the barrier) resulting from screening currents in the electrodes in the presence of a (parasitic) off-plane field component.
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Submitted 16 March, 2010;
originally announced March 2010.
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Evidence for triplet superconductivity in Josephson junctions with ferromagnetic Cu$_{2}$MnAl-Heusler barriers
Authors:
D. Sprungmann,
K. Westerholt,
H. Zabel,
M. Weides,
H. Kohlstedt
Abstract:
We have studied Josephson junctions with barriers prepared from the Heusler compound Cu$_2$MnAl. In the as-prepared state the Cu$_2$MnAl layers are non ferromagnetic and the critical Josephson current density $j_{c}$ decreases exponentially with the thickness of the Heusler layers $d_{F}$. On annealing the junctions at 240\degree C the Heusler layers develop ferromagnetic order and we observe a de…
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We have studied Josephson junctions with barriers prepared from the Heusler compound Cu$_2$MnAl. In the as-prepared state the Cu$_2$MnAl layers are non ferromagnetic and the critical Josephson current density $j_{c}$ decreases exponentially with the thickness of the Heusler layers $d_{F}$. On annealing the junctions at 240\degree C the Heusler layers develop ferromagnetic order and we observe a dependence $j_{c}(d_{F}$) with $j_{c}$ strongly enhanced and weakly thickness dependent in the thickness range 7.0 nm < $d_{F}$ < 10.6 nm. We attribute this feature to a triplet component in the superconducting pairing function generated by the specific magnetization profile inside thin Cu$_2$MnAl layers.
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Submitted 10 March, 2010;
originally announced March 2010.
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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Authors:
R. Frielinghaus,
I. E. Batov,
M. Weides,
H. Kohlstedt,
R. Calarco,
Th. Schaepers
Abstract:
We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current…
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We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current with magnetic field is explained by the magnetic pair-breaking effect in planar Josephson junctions of ultra-narrow width [J. C. Cuevas and F. S. Bergeret, Phys. Rev. Lett. 99, 217002 (2007)]
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Submitted 14 January, 2010;
originally announced January 2010.
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Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and πsegments
Authors:
C. Gürlich,
S. Scharinger,
M. Weides,
H. Kohlstedt,
R. G. Mints,
E. Goldobin,
D. Koelle,
R. Kleiner
Abstract:
Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $π$ ($π$ junction). When 0 and $π$ segments are joined to form a "0-$π$ junction", spontaneous supercurrents around the 0-$π$ boundary can…
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Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $π$ ($π$ junction). When 0 and $π$ segments are joined to form a "0-$π$ junction", spontaneous supercurrents around the 0-$π$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $π$, 0-$π$, 0-$π$-0 and 20 \times 0-$π$ junctions, disk-shaped junctions where the 0-$π$ boundary forms a ring, and an annular junction with two 0-$π$ boundaries. Within each 0 or $π$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $π$ parts have critical current densities $j_c^π$ up to $35\units{A/cm^2}$ at $T = 4.2\units{K}$, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0-$π$ boundary.
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Submitted 25 November, 2009;
originally announced November 2009.
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Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions
Authors:
M. Kemmler,
M. Weides,
M. Weiler,
M. Opel,
S. T. B. Goennenwein,
A. S. Vasenko,
A. A. Golubov,
H. Kohlstedt,
D. Koelle,
R. Kleiner,
E. Goldobin
Abstract:
We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a…
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We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions.
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Submitted 30 October, 2009;
originally announced October 2009.
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Observation of Josephson coupling through an interlayer of antiferromagnetically ordered chromium
Authors:
M. Weides,
M. Disch,
H. Kohlstedt,
D. E. Buergler
Abstract:
The supercurrent transport in metallic Josephson tunnel junctions with an additional interlayer made up by chromium, being an itinerant antiferromagnet, was studied. Uniform Josephson coupling was observed as a function of the magnetic field. The supercurrent shows a weak dependence on the interlayer thickness for thin chromium layers and decays exponentially for thicker films. The diffusion con…
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The supercurrent transport in metallic Josephson tunnel junctions with an additional interlayer made up by chromium, being an itinerant antiferromagnet, was studied. Uniform Josephson coupling was observed as a function of the magnetic field. The supercurrent shows a weak dependence on the interlayer thickness for thin chromium layers and decays exponentially for thicker films. The diffusion constant and the coherence length in the antiferromagnet were estimated. The antiferromagnetic state of the barrier was indirectly verified using reference samples. Our results are compared to macroscopic and microscopic models.
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Submitted 12 August, 2009; v1 submitted 16 June, 2009;
originally announced June 2009.
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Josephson tunnel junctions with ferromagnetic $\Fe_{0.75}\Co_{0.25}$ barriers
Authors:
D. Sprungmann,
K. Westerholt,
H. Zabel,
M. Weides,
H. Kohlstedt
Abstract:
Josephson tunnel junctions with the strong ferromagnetic alloy $\Fe_{0.75}\Co_{0.25}$ as the barrier material were studied. The junctions were prepared with high quality down to a thickness range of a few monolayers of Fe-Co. An oscillation length of $ξ_{F2}\approx 0.79\:{\rm {nm}}$ between 0 and $π$-Josephson phase coupling and a very short decay length $ξ_{F1}\approx 0.22\:{\rm {nm}}$ for the…
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Josephson tunnel junctions with the strong ferromagnetic alloy $\Fe_{0.75}\Co_{0.25}$ as the barrier material were studied. The junctions were prepared with high quality down to a thickness range of a few monolayers of Fe-Co. An oscillation length of $ξ_{F2}\approx 0.79\:{\rm {nm}}$ between 0 and $π$-Josephson phase coupling and a very short decay length $ξ_{F1}\approx 0.22\:{\rm {nm}}$ for the amplitude of the superconducting pair wave function in the Fe-Co layer were determined. The rapid dam** of the pair wave function inside the Fe-Co layer is caused by the strong ferromagnetic exchange field and additional magnetic pair breaking scattering. Josephson junctions with Fe-Co barriers show a significantly increased tendency towards magnetic remanence and flux trap** for larger thicknesses $d_{F}$.
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Submitted 6 May, 2009;
originally announced May 2009.
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Strong enhancement of direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructures
Authors:
N. A. Pertsev,
H. Kohlstedt,
B. Dkhil
Abstract:
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfeno…
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The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfenol-D substrates and compressively strained lead zirconate titanate (PZT) films, which stabilize in the out-of-plane polarization state, is found to be comparable to that of bulk PZT/Terfenol-D laminate composites. At the same time, the ME voltage coefficient reaches a giant value of 50 V/(cm Oe), which greatly exceeds the maximum observed static ME coefficients of bulk composites. This remarkable feature is explained by a favorable combination of considerable strain sensitivity of polarization and a low electric permittivity in compressively strained PZT films. The theory also predicts a further dramatic increase of ME coefficients at the strain-induced transitions between different ferroelectric phases.
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Submitted 17 March, 2009; v1 submitted 16 March, 2009;
originally announced March 2009.
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Escape Rate Measurements and Microwave Spectroscopy of 0, pi, and 0-pi ferromagnetic Josephson Tunnel Junctions
Authors:
J. Pfeiffer,
T. Gaber,
D. Koelle,
R. Kleiner,
E. Goldobin,
M. Weides,
H. Kohlstedt,
J. Lisenfeld,
A. K. Feofanov,
A. V. Ustinov
Abstract:
We present experimental studies of high quality underdamped 0, pi, and 0-pi ferromagnetic Josephson tunnel junctions of intermediate length L (lambda_J < L < 5 lambda_J, where lambda_J is the Josephson penetration depth). The junctions are fabricated as Nb/Al_2O_3/Cu_40Ni_60/Nb Superconductor-Insulator-Ferromagnet-Superconductor heterostructures. Using microwave spectroscopy, we have investigate…
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We present experimental studies of high quality underdamped 0, pi, and 0-pi ferromagnetic Josephson tunnel junctions of intermediate length L (lambda_J < L < 5 lambda_J, where lambda_J is the Josephson penetration depth). The junctions are fabricated as Nb/Al_2O_3/Cu_40Ni_60/Nb Superconductor-Insulator-Ferromagnet-Superconductor heterostructures. Using microwave spectroscopy, we have investigated the eigenfrequencies of 0, pi, and 0-pi Josephson junctions in the temperature range 1.9K...320mK. Harmonic, subharmonic and superharmonic pum** is observed in experiment, and the experimental data are compared with numerical simulations. Escape rate measurements without applied microwaves at temperatures T down to 20mK show that the width of the switching current histogram decreases with temperature and saturates below T=150mK. We analyze our data in the framework of the short junction model. The differences between experimental data and theoretical predictions are discussed.
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Submitted 5 March, 2009;
originally announced March 2009.
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Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
Authors:
H. Kohlstedt,
A. Petraru,
M. Meier J. Denlinger,
J. Guo,
Y. Wanli,
A. Scholl,
B. Freelon,
T. Schneller,
R. Waser,
P. Yu,
R. Ramesh,
T. Learmonth,
P. -A. Glans,
K. E. Smith
Abstract:
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr…
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We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
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Submitted 23 October, 2008;
originally announced October 2008.
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Ferromagnetic 0-pi Josephson junctions
Authors:
M. Weides,
H. Kohlstedt,
R. Waser,
M. Kemmler,
J. Pfeiffer,
D. Koelle,
R. Kleiner,
E. Goldobin
Abstract:
We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with h…
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We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $π$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$π$ Josephson junction, in which 0 and $π$ ground states compete with each other. At a certain temperature the 0 and $π$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Φ_0$.
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Submitted 27 April, 2007; v1 submitted 29 January, 2007;
originally announced January 2007.
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Low-T_c Josephson junctions with tailored barrier
Authors:
M. Weides,
C. Schindler,
H. Kohlstedt
Abstract:
Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current…
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Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.
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Submitted 2 January, 2007; v1 submitted 6 December, 2006;
originally announced December 2006.
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0-pi Josephson tunnel junctions with ferromagnetic barrier
Authors:
M. Weides,
M. Kemmler,
E. Goldobin,
H. Kohlstedt,
R. Waser,
D. Koelle,
R. Kleiner
Abstract:
We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent…
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We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.
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Submitted 5 October, 2006; v1 submitted 26 May, 2006;
originally announced May 2006.
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High quality ferromagnetic 0 and pi Josephson tunnel junctions
Authors:
M. Weides,
M. Kemmler,
H. Kohlstedt,
A. Buzdin,
E. Goldobin,
D. Koelle,
R. Kleiner
Abstract:
We fabricated high quality $\Nb/\Al_2Ø_3/\Ni_{0.6}\Cu_{0.4}/\Nb$ superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic $\Ni_{0.6}\Cu_{0.4}$ layer and on the ambient temperature, the junctions were in the 0 or $π$ ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The…
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We fabricated high quality $\Nb/\Al_2Ø_3/\Ni_{0.6}\Cu_{0.4}/\Nb$ superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic $\Ni_{0.6}\Cu_{0.4}$ layer and on the ambient temperature, the junctions were in the 0 or $π$ ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The $\Al_2Ø_3$ tunnel barrier allows to achieve rather low dam**, which is desired for many experiments especially in the quantum domain. The McCumber parameter $β_c$ increases exponentially with decreasing temperature and reaches $β_c\approx700$ at $T=2.1 {\rm K}$. The critical current density in the $π$ state was up to $5\:\rm{A/cm^2}$ at $T=2.1 {\rm K}$, resulting in a Josephson penetration depth $λ_J$ as low as $160\:\rm{μm}$. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the $\Ni_{0.6}\Cu_{0.4}$ layer and different transparencies of the interfaces.
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Submitted 24 August, 2006; v1 submitted 4 April, 2006;
originally announced April 2006.
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Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions
Authors:
N. A. Pertsev,
H. Kohlstedt
Abstract:
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization state may remain stable against transformations into the paraelectric phase a…
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The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization state may remain stable against transformations into the paraelectric phase and into polydomain states down to the nanoscale. This result supports the possibility of depolarizing-field-related resistive switching in ferroelectric tunnel junctions with dissimilar electrodes. The resistance on/off ratio in such junctions is shown to be governed by the difference between the reciprocal capacitances of screening space charges in the electrodes.
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Submitted 8 November, 2006; v1 submitted 28 March, 2006;
originally announced March 2006.
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Fabrication of high quality ferromagnetic Josephson junctions
Authors:
M. Weides,
K. Tillmann,
H. Kohlstedt
Abstract:
We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu layer below the ferromagnetic NiCu (SINFS) lowered interface…
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We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with jc spreads less than 2% was obtained.
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Submitted 22 November, 2005;
originally announced November 2005.
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Theoretical current-voltage characteristics of ferroelectric tunnel junctions
Authors:
H. Kohlstedt,
N. A. Pertsev,
J. Rodriguez Contreras,
R. Waser
Abstract:
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroe…
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We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio.
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Submitted 22 March, 2005;
originally announced March 2005.
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Simulation of quantum dead-layers in ferroelectric tunnel junctions
Authors:
K. M. Indlekofer,
H. Kohlstedt
Abstract:
In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tu…
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In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.
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Submitted 3 March, 2005;
originally announced March 2005.
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Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties
Authors:
V. G. Kukhar,
N. A. Pertsev,
H. Kohlstedt,
R. Waser
Abstract:
Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phas…
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Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported.
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Submitted 25 November, 2004;
originally announced November 2004.
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1-D Simulation of the Electron Density Distribution in a Novel Nonvolatile Resistive Random Access Memory Device
Authors:
Rene Meyer,
Hermann Kohlstedt
Abstract:
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's equation and the transport equation for electrons assuming a Drift-Diffusion transport mechanism. Special emphasis is put on the screening of the spontaneous pol…
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The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's equation and the transport equation for electrons assuming a Drift-Diffusion transport mechanism. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found giving rise to a hysteretic I-V characteristic. The R_high to R_low ratio ranging from > 50% to several orders of magnitude is calculated as a function of the dopant content.
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Submitted 23 December, 2003;
originally announced December 2003.
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Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects
Authors:
A. G. Zembilgotov,
N. A. Pertsev,
H. Kohlstedt,
R. Waser
Abstract:
The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the…
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The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in surface layers. The film mean polarization is calculated as a function of film thickness, temperature, and misfit strain. It is shown that the negative intrinsic size effect is reduced in epitaxial films due to the in-plane compression of the film lattice. At room temperature, strong reduction of the mean polarization may take place only in ultrathin films (thickness ~ 1 nm). Theoretical predictions are compared with the available experimental data on polarization properties of BaTiO3 films grown on SrRuO3 coated SrTiO3.
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Submitted 12 November, 2001;
originally announced November 2001.
