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Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance
Authors:
Md Shafkat Bin Hoque,
Yee Rui Koh,
Kiumars Aryana,
Eric Hoglund,
Jeffrey L. Braun,
David H. Olson,
John T. Gaskins,
Habib Ahmad,
Mirza Mohammad Mahbube Elahi,
Jennifer K. Hite,
Zayd C. Leseman,
W. Alan Doolittle,
Patrick E. Hopkins
Abstract:
Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore…
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Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates typically inaccessible by traditional pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.
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Submitted 25 February, 2021;
originally announced February 2021.
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Experimental Observation of High Intrinsic Thermal Conductivity of AlN
Authors:
Zhe Cheng,
Yee Rui Koh,
Abdullah Mamun,
**g**g Shi,
Tingyu Bai,
Kenny Huynh,
Luke Yates,
Zeyu Liu,
Ruiyang Li,
Eungkyu Lee,
Michael Liao,
Yekan Wang,
Hsuan Ming Yu,
Maki Kushimoto,
Tengfei Luo,
Mark S. Goorsky,
Patrick E. Hopkins,
Hiroshi Amano,
Asif Khan,
Samuel Graham
Abstract:
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to i…
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AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.
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Submitted 4 November, 2019;
originally announced November 2019.
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Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces
Authors:
Zhe Cheng,
Yee Rui Koh,
Habib Ahmad,
Renjiu Hu,
**g**g Shi,
Michael E. Liao,
Yekan Wang,
Tingyu Bai,
Ruiyang Li,
Eungkyu Lee,
Evan A. Clinton,
Christopher M. Matthews,
Zachary Engel,
Yates,
Tengfei Luo,
Mark S. Goorsky,
William Doolittle,
Zhiting Tian,
Patrick E. Hopkins,
Samuel Graham
Abstract:
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanis…
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A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.
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Submitted 23 September, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials
Authors:
Yining Feng,
Evan Witkoske,
Bahadir Kucukgok,
Yee Rui Koh,
Ali Shakouri,
Ian T. Ferguson,
Na Lu
Abstract:
High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of…
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High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of 0.86, which is five times larger than that of SiGe, the current state of the art high temperature thermoelectric material. These materials are shown to have a nearly perfect do** concentration to maximize zT regardless of the scattering mechanism. This almost one order of magnitude increase in zT is due to large electrical conductivities from oxygen co-do** as well as low thermal conductivities from alloy scattering. The maximum power factor reached was $77.98x10^{-4} W/mK^{2}$ at 300K for $In_{0.32}Ga_{0.68}N$ alloys at a carrier concentration $~6.25x10^{20} cm^{-3}$. This work indicates that $In_{x}Ga_{1-x}N$ alloys have great potential for thermoelectric applications especially at a high temperature range.
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Submitted 24 July, 2019; v1 submitted 9 May, 2019;
originally announced May 2019.
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Superdiffusive heat conduction in semiconductor alloys -- II. Truncated Lévy formalism for experimental analysis
Authors:
Bjorn Vermeersch,
Amr M. S. Mohammed,
Gilles Pernot,
Yee Rui Koh,
Ali Shakouri
Abstract:
Nearly all experimental observations of quasi-ballistic heat flow are interpreted using Fourier theory with modified thermal conductivity. Detailed Boltzmann transport equation (BTE) analysis, however, reveals that the quasi-ballistic motion of thermal energy in semiconductor alloys is no longer Brownian but instead exhibits Lévy dynamics with fractal dimension $α< 2$. Here, we present a framework…
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Nearly all experimental observations of quasi-ballistic heat flow are interpreted using Fourier theory with modified thermal conductivity. Detailed Boltzmann transport equation (BTE) analysis, however, reveals that the quasi-ballistic motion of thermal energy in semiconductor alloys is no longer Brownian but instead exhibits Lévy dynamics with fractal dimension $α< 2$. Here, we present a framework that enables full 3D experimental analysis by retaining all essential physics of the quasi-ballistic BTE dynamics phenomenologically. A stochastic process with just two fitting parameters describes the transition from pure Lévy superdiffusion as short length and time scales to regular Fourier diffusion. The model provides accurate fits to time domain thermoreflectance raw experimental data over the full modulation frequency range without requiring any `effective' thermal parameters and without any a priori knowledge of microscopic phonon scattering mechanisms. Identified $α$ values for InGaAs and SiGe match ab initio BTE predictions within a few percent. Our results provide experimental evidence of fractal Lévy heat conduction in semiconductor alloys. The formalism additionally indicates that the transient temperature inside the material differs significantly from Fourier theory and can lead to improved thermal characterization of nanoscale devices and material interfaces.
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Submitted 25 September, 2014; v1 submitted 27 June, 2014;
originally announced June 2014.
