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Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Authors:
N. R. S. van Venrooij,
A. R. da Cruz,
R. S. R. Gajjella,
P. M. Koenraad,
Craig E. Pryor,
Michael E. Flatté
Abstract:
We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square (…
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We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square ($C_{4v}$) spatial symmetry, which has been previously associated with small FSS. Configuration interaction calculations predict a vanishing FSS at a specific finite etch pit displacement from the center of the dot, for a structure far from square symmetry. We thus predict that highly asymmetric quantum dots may still display negligible fine structure splitting, providing new avenues for high-fidelity generation of indistinguishable, polarization entangled photon pairs on demand.
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Submitted 26 September, 2023;
originally announced September 2023.
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An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
Authors:
D. Tjeertes,
A. Vela,
T. J. F. Verstijnen,
E. G. Banfi,
P. J. van Veldhoven,
M. G. Menzes,
R. B. Capaz,
B. Koiller,
P. M. Koenraad
Abstract:
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functio…
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Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functional theory (DFT) calculations to study Si donors in AlAs at the atomic scale. Based on their crystal symmetry and contrast strengths, we identify Si donors up to four layers below the (110) surface of AlAs. Interestingly, their short-range local density of states (LDOS) is very similar to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution images of Si donors in all these layers. For empty state imaging, the experimental and simulated STM images based on DFT show excellent agreement for Si donor up to two layers below the surface.
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Submitted 10 June, 2021;
originally announced June 2021.
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Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
Authors:
R. S. R. Gajjela,
A. L. Hendriks,
A. Alzeidan,
T. F. Cantalice,
A. A. Quivy,
P. M. Koenraad
Abstract:
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions. Multiple layers were grown under different conditions to study their effects on the formation, morphology and local composition of the SMLQDs. The morphological and…
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Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions. Multiple layers were grown under different conditions to study their effects on the formation, morphology and local composition of the SMLQDs. The morphological and compositional variations in SMLQDs were observed by both filled and emptystate imaging. A detailed analysis of indium segregation in the SMLQDs layers was described by fitting local indium concentration profile with a standard segregation model. A strong influence of arsenic flux over the formation of the SMLQDs and indium incorporation was observed and reported. We investigated the well-width fluctuations of the InGaAs quantum well (QW) in which SMLQDs were formed . The monolayer fluctuations of the well width were negligible compared to the more pronounced compositional fluctuations in all the layers. Keywords: Submonolayer quantum dots, Surface reconstruction, X-STM, Indium segregation
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Submitted 26 August, 2020;
originally announced August 2020.
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N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
Authors:
D. Tjeertes,
T. J. F. Verstijnen,
A. Gonzalo,
J. M. Ulloa,
M. S. Sharma,
M. Felici,
A. Polimeni,
F. Biccari,
M. Gurioli,
G. Pettinari,
C. Şahin,
M. E. Flatté,
P. M. Koenraad
Abstract:
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In…
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Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.
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Submitted 23 July, 2020;
originally announced July 2020.
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Probing embedded topological modes in bulk-like GeTe-Sb$_2$Te$_3$ heterostructures
Authors:
Hisao Nakamura,
Johannes Hofmann,
Nobuki Inoue,
Sebastian Koelling,
Paul M. Koenraad,
Gregor Mussler,
Detlev Grützmacher,
Vijay Narayan
Abstract:
The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such \textit{embedded} topolog…
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The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such \textit{embedded} topological states (ETSs) in heterostructures of GeTe (normal insulator) and Sb$_2$Te$_3$ (topological insulator). We analyse their dependence on the interface and their confinement characteristics. To characterise the heterostructures, we evaluate the GeTe-Sb$_2$Te$_3$ band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within a four-band continuum model. Our analysis reveals, strikingly, that under realistic conditions, the interfacial topological modes are delocalised over many lattice spacings. Interestingly, the first-principles calculations indicate that the ETSs are relatively robust to disorder and this may have practical ramifications. Our study provides insights into how to manipulate topological modes in heterostructures and also provides a basis for recent experimental findings [Nguyen \textit{et al.}, Sci. Rep. \textbf{6}, 27716 (2016)] where ETSs were seen to couple over large distances.
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Submitted 5 September, 2021; v1 submitted 23 December, 2019;
originally announced December 2019.
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Probing the local electronic structure of isovalent Bi atoms in InP
Authors:
C. M. Krammel,
A. R. da Cruz,
M. E. Flatté,
M. Roy,
P. A. Maksym,
L. Y. Zhang,
K. Wang,
Y. Y. Li,
S. M. Wang,
P. M. Koenraad
Abstract:
Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a hig…
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Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a highly anisotropic bowtie-like structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\left\langle 110\right\rangle$ directions, which define the bowtie-like structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge towards higher energies. This is in good agreement to first principles calculations. Furthermore, we show that the energetic position of the Bi induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.
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Submitted 31 January, 2020; v1 submitted 4 June, 2019;
originally announced June 2019.
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Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well
Authors:
P. V. Petrov,
I. A. Kokurin,
G. V. Klimko,
S. V. Ivanov,
Yu. L. Ivánov,
P. M. Koenraad,
A. Yu. Silov,
N. S. Averkiev
Abstract:
We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we a…
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We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.
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Submitted 15 September, 2016;
originally announced September 2016.
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Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
Authors:
P. V. Petrov,
I. A. Kokurin,
Yu. L. Ivanov,
N. S. Averkiev,
R. P. Campion,
B. L. Gallagher,
P. M. Koenraad,
A. Yu. Silov
Abstract:
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in…
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The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.
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Submitted 1 September, 2016;
originally announced September 2016.
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Spatially resolved electronic structure of an isovalent nitrogen center in GaAs
Authors:
R. C. Plantenga,
V. R. Kortan,
T. Kaizu,
Y. Harada,
T. Kita,
M. E. Flatté,
P. M. Koenraad
Abstract:
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration dependence, and impurity-associated spatially-localized resonant states within the conduction band. Cross-sectional scanning tunneling microscopy provides the local electronic structure of single nitrogen dopants at the (…
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Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration dependence, and impurity-associated spatially-localized resonant states within the conduction band. Cross-sectional scanning tunneling microscopy provides the local electronic structure of single nitrogen dopants at the (110) GaAs surface, yielding highly anisotropic spatial shapes when the empty states are imaged. Measurements of the resonant states relative to the GaAs surface states and their spatial extent allow an unambiguous assignment of specific features to nitrogen atoms at different depths below the cleaved (110) surface. Multiband tight binding calculations around the resonance energy of nitrogen in the conduction band match the imaged features. The spatial anisotropy is attributed to the tetrahedral symmetry of the bulk lattice. Additionally, the voltage dependence of the electronic contrast for two features in the filled state imaging suggest these features could be related to a locally modified surface state.
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Submitted 29 May, 2016;
originally announced May 2016.
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Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope
Authors:
J. M. Moore,
V. R. Kortan,
M. E. Flatté,
J. Bocquel,
P. M. Koenraad
Abstract:
We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energy of a single Fe atom embedded in GaAs as a function of displacement from the substitutional site support the interpretation of a reversible lattice d…
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We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energy of a single Fe atom embedded in GaAs as a function of displacement from the substitutional site support the interpretation of a reversible lattice displacement of the Fe dopant. Our calculations indicate a second stable configuration for the Fe dopant within the lattice, characterized by a displacement along the [111] axis, accompanied by a change in atomic configuration symmetry about the Fe from four-fold to six-fold symmetry. The resulting atomic configurations are then used within a tight-binding calculation to determine the effect of a Fe position shift on the topography. These results expand the range of demonstrated local configurational changes induced electronically for dopants, and thus may be of use for sensitive control of dopant properties and dopant-dopant interactions.
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Submitted 14 May, 2015;
originally announced May 2015.
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Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
Authors:
N. Ha,
T. Mano,
Y. L. Chou,
Y. N. Wu,
S. J. Cheng,
J. Bocquel,
P. M. Koenraad,
A. Ohtake,
Y. Sakuma,
K. Sakoda,
T. Kuroda
Abstract:
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a…
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Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a height of ~2 nm showed resolution-limited spectral lines (<120 micro eV). The measured height dependence of the linewidths is in good agreement with Stark coefficients calculated for the experimental shape variation. We attribute the microscopic source of fluctuating electric fields to the random motion of surface charges at the vacuum-semiconductor interface. Our results offer guidelines for creating frequency-locked photon sources, which will serve as key devices for long-distance quantum key distribution.
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Submitted 16 June, 2015; v1 submitted 9 April, 2015;
originally announced April 2015.
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Ferromagnetic Mn doped InSb studied at the atomic scale by cross-sectional STM
Authors:
S. J. C. Mauger,
J. Bocquel,
P. M. Koenraad,
C. Feeser,
N. Parashar,
B. W. Wessels
Abstract:
We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy. The measurements show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration obtai…
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We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy. The measurements show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration obtained from the cross-sectional STM data compares well with the intended do** concentration. No second phase material or (nano)clustering of the Mn was observed. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location is clearly noted. We discuss the implications of the observed disorder for a number of suggested explanations of the room-temperature ferromagnetism in Mn doped InSb grown by metal-organic vapor epitaxy.
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Submitted 23 March, 2015;
originally announced March 2015.
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Observation of the symmetry of core states of a single Fe impurity in GaAs
Authors:
J. Bocquel,
V. R. Kortan,
R. P. Campion,
B. L. Gallagher,
M. E. Flatté,
P. M. Koenraad
Abstract:
We report the direct observation of two mid-gap core d-states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their hybridization with the surrounding host electronic structure. The mid-gap state of Fe that does not hybridize via sigma-bonding is strongly localized to the Fe atom, whereas the other, which does, is extended and comparab…
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We report the direct observation of two mid-gap core d-states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their hybridization with the surrounding host electronic structure. The mid-gap state of Fe that does not hybridize via sigma-bonding is strongly localized to the Fe atom, whereas the other, which does, is extended and comparable in size to other acceptor states. Tight-binding calculations of these mid-gap states agree with the spatial structure of the measured wave functions, and illustrate that such measurements can determine the degree of hybridization via pi-bonding of impurity d-states. These single-dopant mid-gap states with strong d-character, which are intrinsically spin-orbit-entangled, provide an opportunity for probing and manipulating local magnetism and may be of use for high-speed electrical control of single spins.
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Submitted 28 January, 2015;
originally announced January 2015.
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Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures
Authors:
J. van Bree,
A. Yu. Silov,
P. M. Koenraad,
M. E. Flatté
Abstract:
Circulating orbital currents, originating from the spin-orbit interaction, are calculated for semiconductor nanostructures in the shape of spheres, disks, spherical shells and rings for the electron ground state with spin oriented along a symmetry axis. The currents and resulting orbital and spin magnetic moments, which combine to yield the effective electron g factor, are calculated using a recen…
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Circulating orbital currents, originating from the spin-orbit interaction, are calculated for semiconductor nanostructures in the shape of spheres, disks, spherical shells and rings for the electron ground state with spin oriented along a symmetry axis. The currents and resulting orbital and spin magnetic moments, which combine to yield the effective electron g factor, are calculated using a recently introduced formalism that allows the relative contributions of different regions of the nanostructure to be identified. For all these spherically or cylindrically symmetric hollow or solid nanostructures, independent of material composition and whether the boundary conditions are hard or soft, the dominant orbital current originates from intermixing of valence band states in the electron ground state, circulates within the nanostructure, and peaks approximately halfway between the center and edge of the nanostructure in the plane perpendicular to the spin orientation. For a specific material composition and confinement character, the confinement energy and orbital moment are determined by a single size-dependent parameter for spherically symmetrical nanostructures, whereas they can be independently tuned for cylindrically symmetric nanostructures.
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Submitted 28 July, 2014;
originally announced July 2014.
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Spin-orbit-induced circulating currents in a semiconductor nanostructure
Authors:
J. van Bree,
A. Yu. Silov,
P. M. Koenraad,
M. E. Flatté
Abstract:
Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly vary…
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Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for $g=0$) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.
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Submitted 6 May, 2014;
originally announced May 2014.
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Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
Authors:
M. Bozkurt,
M. R. Mahani,
P. Studer,
J. -M. Tang,
S. R. Schofield,
N. J. Curson,
M. E Flatte,
A. Yu. Silov,
C. F. Hirjibehedin,
C. M. Canali,
P. M. Koenraad
Abstract:
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. T…
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We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.
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Submitted 22 April, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Valence state manipulation of single Fe impurities in GaAs by STM
Authors:
J. Bocquel,
V. R. Kortan,
R. P. Campion,
B. L. Gallagher,
M. E. Flatté,
P. M. Koenraad
Abstract:
The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5…
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The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.
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Submitted 28 March, 2012;
originally announced March 2012.
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Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms
Authors:
V. Jovanov,
T. Eissfeller,
S. Kapfinger,
E. C. Clark,
F. Klotz,
M. Bichler,
J. G. Keizer,
P. M. Koenraad,
M. S. Brandt,
G. Abstreiter,
J. J. Finley
Abstract:
Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing o…
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Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering.
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Submitted 12 December, 2011;
originally announced December 2011.
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g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots
Authors:
J. van Bree,
A. Yu. Silov,
P. M. Koenraad,
M. E. Flatté,
C. E. Pryor
Abstract:
The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum…
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The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g-factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.
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Submitted 23 November, 2011;
originally announced November 2011.
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Shape control of QDs studied by cross-sectional scanning tunneling microscopy
Authors:
J. G. Keizer,
M. Bozkurt,
J. Bocquel,
P. M. Koenraad,
T. Mano,
T. Noda,
K. Sakoda,
E. C. Clark,
M. Bichler,
G. Abstreiter,
J. J. Finley,
W. Lu,
T. Rohel,
H. Folliot,
N. Bertru
Abstract:
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thicknes…
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In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first cap** layer. Concerning the technique of antimony cap** we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and cap** with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.
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Submitted 15 November, 2010;
originally announced November 2010.
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Composition profiling InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunnelling microscopy
Authors:
A. D. Giddings,
J. G. Keizer,
M. Hara,
G. J. Hamhuis,
H. Yuasa,
H. Fukuzawa,
P. M. Koenraad
Abstract:
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration…
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This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration profiles measured by each method. We show that computational models of the wetting layer and the QDs, based on experimental data, are consistent with both analytical approaches. This establishes a link between the two techniques and shows their complimentary behaviour, an advantage which we exploit in order to highlight unique features of the examined QD material.
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Submitted 24 January, 2011; v1 submitted 28 October, 2010;
originally announced October 2010.
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Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
Authors:
N. A. J. M. Kleemans,
J. van Bree,
M. Bozkurt,
P. J. van Veldhoven,
P. A. Nouwens,
R. Nötzel,
A. Yu. Silov,
M. E. Flatté,
P. M. Koenraad
Abstract:
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots h…
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We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the quantum dots, which eventually gives rise to a sign change of the g-factor. The observed correlation between exciton g-factor and the size of the dots is in good agreement with calculations. Moreover, we find a size dependent anisotropy splitting of the exciton emission in zero magnetic field.
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Submitted 9 December, 2008;
originally announced December 2008.
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Influence of the Characteristics of the STM-tip on the Electroluminescence Spectra
Authors:
M. D. Croitoru,
V. N. Gladilin,
V. M. Fomin,
J. T. Devreese,
M. Kemerink,
P. M. Koenraad,
J. H. Wolter
Abstract:
We analyze the influence of the characteristics of the STM-tip (applied voltage, tip radius) on the electroluminescence spectra from an STM-tip-induced quantum dot taking into account the many-body effects. We find that positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the shape and size of the confinement potential as…
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We analyze the influence of the characteristics of the STM-tip (applied voltage, tip radius) on the electroluminescence spectra from an STM-tip-induced quantum dot taking into account the many-body effects. We find that positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the shape and size of the confinement potential as determined by the tip radius and the applied voltage. A critical value of the tip radius is found, at which the luminescence peak positions as a function of the tip radius manifest a transition from decreasing behavior for smaller radii to increasing behavior for larger radii. We find that this critical value of the tip radius is related to the confinement in the lateral and normal direction.
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Submitted 31 January, 2006;
originally announced January 2006.
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Spatial structure of Mn-Mn acceptor pairs in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. -M. Tang,
M. E. Flatté,
W. Van Roy,
J. De Boeck,
J. H. Wolter
Abstract:
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acce…
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The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high do** levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.
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Submitted 24 May, 2005; v1 submitted 23 May, 2005;
originally announced May 2005.
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Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. H. Wolter,
W. Van Roy,
J. De Boeck
Abstract:
An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of t…
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An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
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Submitted 6 June, 2004;
originally announced June 2004.
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Spatial structure of an individual Mn acceptor in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. H. Wolter,
W. Van Roy,
J. De Boeck,
J. -M. Tang,
M. E. Flatte
Abstract:
The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs c…
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The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.
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Submitted 1 February, 2004;
originally announced February 2004.
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Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
W. Van Roy,
J. De Boeck,
J. H. Wolter
Abstract:
We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feat…
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We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the [Mn2+(3d5) + hole] complex.
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Submitted 12 August, 2003;
originally announced August 2003.
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Sn delta-do** in GaAs
Authors:
V. A. Kulbachinskii,
V. G. Kytin,
R. A. Lunin,
A. V. Golikov,
V. G. Mokerov,
A. S. Bugaev,
A. P. Senichkin,
R. T. F. van Schaijk,
A. de Visser,
P. M. Koenraad
Abstract:
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn do** densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher th…
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We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn do** densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.
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Submitted 20 July, 1999;
originally announced July 1999.
