Showing 1–13 of 13 results for author: Koehler, M R

Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material

Authors: Fateme Mahdikhany, Sean Driskill, Jeremy G. Philbrick, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Oliver L. A. Monti, Vasili Perebeinos, Tai Kong, John R. Schaibley

Abstract: One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mix… ▽ More One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (> 10 μm) nanobundles with thicknesses that range from of 1.3 - 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ~1 eV exciton binding energy and a ~200 meV exciton self-trap** energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications including on-chip tunable nanolasers, and applications that require ultra-violet to visible light conversion such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Single exciton trap** in an electrostatically defined 2D semiconductor quantum dot

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trap** for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We… ▽ More Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trap** for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination. △ Less

Submitted 3 November, 2022; v1 submitted 27 June, 2022; originally announced June 2022.

Journal ref: Phys. Rev. B 106, L201401 (2022)

Interlayer Exciton Diode and Transistor

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''.… ▽ More Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''. By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high-speed exciton flow with a drift velocity up to 2 * 10$^6$ cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way towards low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures. △ Less

Submitted 19 August, 2022; v1 submitted 17 March, 2022; originally announced March 2022.

Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential

Authors: Fateme Mahdikhanysarvejahany, Daniel N. Shanks, Mathew Klein, Qian Wang, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Oliver L. A. Monti, Brian J. LeRoy, John R. Schaibley

Abstract: Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moiré physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) phot… ▽ More Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moiré physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. Here, we show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We directly compare the do**, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe2-WSe2 region to those in a region separated by bilayer hBN. Our results show that the localization potential resulting in the narrow PL lines is independent of the moiré potential, and instead likely due to extrinsic effects such as nanobubbles or defects. We show that while the do**, electric field, and temperature dependence of the narrow IX lines is similar for both regions, their excitonic g-factors have opposite signs, indicating that the IXs in the directly contacted region are trapped by both moiré and extrinsic localization potentials. △ Less

Submitted 15 March, 2022; originally announced March 2022.

Journal ref: Nature Communications volume 13, Article number: 5354 (2022)

Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures

Authors: Rachel Nieken, Anna Roche, Fateme Mahdikhanysarvejahany, Takashi Taniguchi, Kenji Watanabe, Michael R. Koehler, David G. Mandrus, John Schaibley, Brian J. LeRoy

Abstract: When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to oc… ▽ More When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to occur. Here we report scanning tunneling microscopy and spectroscopy measurements on the band gaps and band modulations in MoSe2/WSe2 heterostructures with near 0 degree rotation (R-type) and near 60 degree rotation (H-type). We find a modulation of the band gap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges. △ Less

Submitted 17 March, 2022; v1 submitted 6 January, 2022; originally announced January 2022.

Comments: Published version

Journal ref: APL Materials 10, 031107 (2022)

Disentangling Electronic, Lattice and Spin Dynamics in the Chiral Helimagnet Cr1/3NbS2

Authors: N. Sirica, H. Hedayat, D. Bugini, M. R. Koehler, L. Li, D. S. Parker, D. G. Mandrus, C. Dallera, E. Carpene, N. Mannella

Abstract: We investigate the static and ultrafast magneto-optical response of the hexagonal chiral helimagnet $Cr_{1/3}NbS_{2}$ above and below the helimagnetic ordering temperature. The presence of a magnetic easy plane contained within the crystallographic ab-plane is confirmed, while degenerate optical pump-probe experiments reveal significant differences in the dynamic between the parent, $NbS_{2}$, and… ▽ More We investigate the static and ultrafast magneto-optical response of the hexagonal chiral helimagnet $Cr_{1/3}NbS_{2}$ above and below the helimagnetic ordering temperature. The presence of a magnetic easy plane contained within the crystallographic ab-plane is confirmed, while degenerate optical pump-probe experiments reveal significant differences in the dynamic between the parent, $NbS_{2}$, and Cr-intercalated compounds. Time resolved magneto-optical Kerr effect measurements show a two-step demagnetization process, where an initial, sub-ps relaxation and subsequent buildup ($τ> 50$ ps) in the demagnetization dynamic scale similarly with increasing pump fluence. Despite theoretical evidence for partial gap** of the minority spin channel, suggestive of possible half metallicity in $Cr_{1/3}NbS_{2}$, such a long demagnetization dynamic likely results from spin lattice-relaxation as opposed to minority state blocking. However, comparison of the two-step demagnetization process in $Cr_{1/3}NbS_{2}$ with other 3d intercalated transition metal dichalcogenides reveals a behavior that is unexpected from conventional spin-lattice relaxation, and may be attributed to the complicated interaction of local moments with itinerant electrons in this material system. △ Less

Submitted 22 November, 2021; originally announced November 2021.

Comments: 20 pages, 10 figures, 1 Table

Journal ref: Phys. Rev. B 104, 174426 (2021)

Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Authors: Muhed S. Rana, Joshua R. Hendrickson, Christopher E. Stevens, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Nai H. Kwong, Rolf Binder, John R. Schaibley

Abstract: Monolayer transition metal dichalcogenide (TMD) semiconductors such as MoSe$_2$ host strongly bound excitons which are known to exhibit a strong resonant third-order nonlinear response. Although there have been numerous studies of the ultrafast nonlinear response of monolayer TMDs, a study of the steady-state nonlinear response is lacking. We report a comprehensive study of the steady-state two-co… ▽ More Monolayer transition metal dichalcogenide (TMD) semiconductors such as MoSe$_2$ host strongly bound excitons which are known to exhibit a strong resonant third-order nonlinear response. Although there have been numerous studies of the ultrafast nonlinear response of monolayer TMDs, a study of the steady-state nonlinear response is lacking. We report a comprehensive study of the steady-state two-color nonlinear response of excitons in hBN-encapsulated monolayer MoSe$_2$ at 7 K. We observe differential transmission (DT) signals associated with the neutral and charged exciton species, which is strongly dependent on the polarization of the pump and probe. Our results are compared to a theoretical model based on a T-matrix formulation for exciton-exciton, exciton-trion, and trion-trion correlations. The parameters are chosen such that the theory accurately reproduces the experimental DT spectrum, which is found to be dominated by two-exciton correlations without strong biexciton binding, exciton-trion attractive interactions, and strong spin mixing through incoherent relaxation. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Nanoscale trap** of interlayer excitons in a 2D semiconductor heterostructure

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley

Abstract: For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trap** approaches invol… ▽ More For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trap** approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an ~20 nm trap. The trapped IXs show the predicted electric field dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step towards deterministic trap** of single IXs, which has broad applications to scalable quantum technologies. △ Less

Submitted 25 June, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Journal ref: Nano Lett. 2021

Temperature dependent moiré trap** of interlayer excitons in MoSe2-WSe2 heterostructures

Authors: Fateme Mahdikhanysarvejahany, Daniel N. Meade, Christine Muccianti, Bekele H. Badada, Ithwun Idi, Adam Alfrey, Sean Raglow, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Oliver L. A. Monti, Hongyi Yu, Brian J. LeRoy, John R. Schaibley

Abstract: MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study o… ▽ More MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study of the temperature, excitation power, and time-dependent PL of IXs. We observe a significant decrease in PL intensity above a transition temperature that we attribute to a transition from localized to delocalized IXs. Astoundingly, we find a simple inverse relationship between the IX PL energy and the transition temperature, which exhibits opposite power dependent behaviors for near 0° and 60° samples. We conclude that this temperature dependence is a result of IX-IX exchange interactions, whose effect is suppressed by the moiré potential trap** IXs at low temperature. △ Less

Submitted 26 May, 2021; v1 submitted 30 December, 2020; originally announced December 2020.

2D Semiconductor Nonlinear Plasmonic Modulators

Authors: Matthew Klein, Bekele H. Badada, Rolf Binder, Adam Alfrey, Max McKie, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this wo… ▽ More A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling between the surface plasmon polaritons, SPPs, and excitons in the WSe2 to give a 73 percent change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing the first demonstration of a 2D semiconductor nonlinear plasmonic modulator, with a modulation depth of 4.1 percent, and an ultralow switching energy estimated to be 40 aJ. △ Less

Submitted 12 February, 2019; originally announced February 2019.

LaCu$_{6-x}$Ag$_{x}$: A promising host of an elastic quantum critical point

Authors: L. Poudel, C. de la Cruz, M. R. Koehler, M. A. McGuire, V. Keppens, D. Mandrus, A. D. Christianson

Abstract: Structural properties of LaCu$_{6-x}$Ag$_{x}$ have been investigated using neutron and x-ray diffraction, and resonant ultrasound spectroscopy (RUS) measurements. Diffraction measurements indicate a continuous structural transition from orthorhombic ($Pnma$) to monoclinic ($P2_1/c$) structure. RUS measurements show softening of natural frequencies at the structural transition, consistent with the… ▽ More Structural properties of LaCu$_{6-x}$Ag$_{x}$ have been investigated using neutron and x-ray diffraction, and resonant ultrasound spectroscopy (RUS) measurements. Diffraction measurements indicate a continuous structural transition from orthorhombic ($Pnma$) to monoclinic ($P2_1/c$) structure. RUS measurements show softening of natural frequencies at the structural transition, consistent with the elastic nature of the structural ground state. The structural transition temperatures in LaCu$_{6-x}$Ag$_{x}$ decrease with Ag composition until the monoclinic phase is completely suppressed at $x_c$ = 0.225. All of the evidence is consistent with the presence of an elastic quantum critical point in LaCu$_{6-x}$Ag$_{x}$. △ Less

Submitted 26 June, 2017; originally announced June 2017.

Comments: 5 pages, 3 figures, one table

Itinerant Antiferromagnetism in RuO$_{2}$

Authors: T. Berlijn, P. C. Snijders, O. Delaire, H. -D. Zhou, T. A. Maier, H. -B. Cao, S. -X. Chi, M. Matsuda, Y. Wang, M. R. Koehler, P. R. C. Kent, H. H. Weitering

Abstract: Bulk rutile RuO$_2$ has long been considered a Pauli paramagnet. Here we report that RuO$_2$ exhibits a hitherto undetected lattice distortion below approximately 900 K. The distortion is accompanied by antiferromagnetic order up to at least 300 K with a small room temperature magnetic moment of approximately 0.05 $μ_B$ as evidenced by polarized neutron diffraction. Density functional theory plus… ▽ More Bulk rutile RuO$_2$ has long been considered a Pauli paramagnet. Here we report that RuO$_2$ exhibits a hitherto undetected lattice distortion below approximately 900 K. The distortion is accompanied by antiferromagnetic order up to at least 300 K with a small room temperature magnetic moment of approximately 0.05 $μ_B$ as evidenced by polarized neutron diffraction. Density functional theory plus $U$ (DFT+$U$) calculations indicate that antiferromagnetism is favored even for small values of the Hubbard $U$ of the order of 1 eV. The antiferromagnetism may be traced to a Fermi surface instability, lifting the band degeneracy imposed by the rutile crystal field. The combination of high Néel temperature and small itinerant moments make RuO$_2$ unique among ruthenate compounds and among oxide materials in general. △ Less

Submitted 30 December, 2016; originally announced December 2016.

Comments: accepted in Physical Review Letters

Journal ref: PRL 118, 077201 (2017)

Candidate Elastic Quantum Critical Point in LaCu$_{6-x}$Au$_x$

Authors: L. Poudel, A. F. May, M. R. Koehler, M. A. McGuire, S. Mukhopadhyay, S. Calder, R. E. Baumbach, R. Mukherjee, D. Sapkota, C. de la Cruz, D. J. Singh, D. Mandrus, A. D. Christianson

Abstract: The structural properties of LaCu$_{6-x}$Au$_x$ have been studied using neutron diffraction, x-ray diffraction, and heat capacity measurements. The continuous orthorhombic-monoclinic structural phase transition in LaCu$_{6}$ is suppressed linearly with Au substitution until a complete suppression of the structural phase transition occurs at the critical composition, $x_{c}$ = 0.3. Heat capacity me… ▽ More The structural properties of LaCu$_{6-x}$Au$_x$ have been studied using neutron diffraction, x-ray diffraction, and heat capacity measurements. The continuous orthorhombic-monoclinic structural phase transition in LaCu$_{6}$ is suppressed linearly with Au substitution until a complete suppression of the structural phase transition occurs at the critical composition, $x_{c}$ = 0.3. Heat capacity measurements at low temperatures indicate residual structural instability at $x_c$ that extends well into the orthorhombic phase. The instability is ferroelastic in nature, with density functional theory (DFT) calculations showing negligible coupling to electronic states near the Fermi level. The data and calculations presented here are consistent with the zero temperature termination of a continuous structural phase transition suggesting that the LaCu$_{6-x}$Au$_x$ series hosts an elastic quantum critical point. △ Less

Submitted 4 August, 2016; originally announced August 2016.

Comments: 9 pages, 11 figures